ES324317A1 - A semiconductor device. (Machine-translation by Google Translate, not legally binding) - Google Patents
A semiconductor device. (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES324317A1 ES324317A1 ES0324317A ES324317A ES324317A1 ES 324317 A1 ES324317 A1 ES 324317A1 ES 0324317 A ES0324317 A ES 0324317A ES 324317 A ES324317 A ES 324317A ES 324317 A1 ES324317 A1 ES 324317A1
- Authority
- ES
- Spain
- Prior art keywords
- face
- region
- translation
- semiconductor device
- machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A semiconductor device consisting of the following: a semiconductor body provided, at least, with a main face, with a dielectric layer, on said face, a emitting region in said body immediately adjacent said face, an electrode attached to said region emitter, said electrode being provided with a connection attenuator on said dielectric layer, of a base region in said body immediately adjacent said face, of an electrode attached to said base region, said electrode being provided with a connection attenuator on said dielectric layer, characterized, at least, in a first region of low impedance in said body immediately adjacent to said face and below at least one of said connection attenuators; and the means for connecting said first low impedance region with a potential source. (Machine-translation by Google Translate, not legally binding)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44116065A | 1965-03-19 | 1965-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES324317A1 true ES324317A1 (en) | 1967-02-01 |
Family
ID=23751779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0324317A Expired ES324317A1 (en) | 1965-03-19 | 1966-03-17 | A semiconductor device. (Machine-translation by Google Translate, not legally binding) |
Country Status (3)
Country | Link |
---|---|
ES (1) | ES324317A1 (en) |
GB (1) | GB1138029A (en) |
NL (1) | NL6603563A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2243485A (en) * | 1990-04-27 | 1991-10-30 | Motorola Gmbh | Semiconductor device contact pads |
-
1966
- 1966-03-04 GB GB9709/66A patent/GB1138029A/en not_active Expired
- 1966-03-17 ES ES0324317A patent/ES324317A1/en not_active Expired
- 1966-03-18 NL NL6603563A patent/NL6603563A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL6603563A (en) | 1966-09-20 |
GB1138029A (en) | 1968-12-27 |
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