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ES315620A1 - A semiconductor device for ultra-frequency circuits. (Machine-translation by Google Translate, not legally binding) - Google Patents

A semiconductor device for ultra-frequency circuits. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES315620A1
ES315620A1 ES0315620A ES315620A ES315620A1 ES 315620 A1 ES315620 A1 ES 315620A1 ES 0315620 A ES0315620 A ES 0315620A ES 315620 A ES315620 A ES 315620A ES 315620 A1 ES315620 A1 ES 315620A1
Authority
ES
Spain
Prior art keywords
translation
machine
semiconductor device
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0315620A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES315620A1 publication Critical patent/ES315620A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

A semiconductor device having an insulating support member, characterized by a layer of relatively high resistivity monocrystalline semiconductor material disposed on the support member, two spaced regions, of semiconductor material of relatively low resistivity of the same conductivity type as said layer, forming a feed and a drain in said layer and an insulating barrier electrode arranged to control the passage of current between said feed and said drain. (Machine-translation by Google Translate, not legally binding)
ES0315620A 1964-07-23 1965-07-21 A semiconductor device for ultra-frequency circuits. (Machine-translation by Google Translate, not legally binding) Expired ES315620A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38476364A 1964-07-23 1964-07-23

Publications (1)

Publication Number Publication Date
ES315620A1 true ES315620A1 (en) 1966-06-01

Family

ID=23518655

Family Applications (2)

Application Number Title Priority Date Filing Date
ES0315620A Expired ES315620A1 (en) 1964-07-23 1965-07-21 A semiconductor device for ultra-frequency circuits. (Machine-translation by Google Translate, not legally binding)
ES0324944A Expired ES324944A1 (en) 1964-07-23 1966-03-31 A method for manufacturing a semiconductor device for ultra-frequency circuits. (Machine-translation by Google Translate, not legally binding)

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES0324944A Expired ES324944A1 (en) 1964-07-23 1966-03-31 A method for manufacturing a semiconductor device for ultra-frequency circuits. (Machine-translation by Google Translate, not legally binding)

Country Status (5)

Country Link
JP (1) JPS4817795B1 (en)
DE (1) DE1514361B2 (en)
ES (2) ES315620A1 (en)
GB (1) GB1111528A (en)
NL (1) NL150622B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378367A (en) * 1976-12-21 1978-07-11 Toyoda Automatic Loom Works Apparatus for detecting wef on loom

Also Published As

Publication number Publication date
ES324944A1 (en) 1967-02-16
NL150622B (en) 1976-08-16
DE1514361B2 (en) 1971-04-22
DE1514361A1 (en) 1970-10-01
GB1111528A (en) 1968-05-01
JPS4817795B1 (en) 1973-05-31
NL6509432A (en) 1966-01-24

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