[go: up one dir, main page]

ES2150528T3 - Composiciones de desprendimiento que contienen otros corona. - Google Patents

Composiciones de desprendimiento que contienen otros corona.

Info

Publication number
ES2150528T3
ES2150528T3 ES95301748T ES95301748T ES2150528T3 ES 2150528 T3 ES2150528 T3 ES 2150528T3 ES 95301748 T ES95301748 T ES 95301748T ES 95301748 T ES95301748 T ES 95301748T ES 2150528 T3 ES2150528 T3 ES 2150528T3
Authority
ES
Spain
Prior art keywords
detachment
crown
compositions containing
ions
photoresistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES95301748T
Other languages
English (en)
Inventor
Yaw Samuel Obeng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of ES2150528T3 publication Critical patent/ES2150528T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

LA ADICION DE LIGANDOS PARA QUELAR IONES DEL GRUPO I Y II A SOLVENTES ORGANICOS UTILIZADOS PARA LA ELIMINACION DE LA FOTORESISTENCIA Y LA LIMPIEZA POR ACIDO DE LOS CONDUCTORES, REFORZANDO LA DURACION SUBYACENTE DE ESTOS SOLVENTES. ADEMAS, SE REDUCE LA CONTAMINACION DE IONES MOVILES DE CIRCUITOS INTEGRADOS PROCESADOS CON LIGANDOS DE SOLVENTES MODIFICADOS ORGANICAMENTE.
ES95301748T 1994-03-18 1995-03-16 Composiciones de desprendimiento que contienen otros corona. Expired - Lifetime ES2150528T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/210,193 US5417802A (en) 1994-03-18 1994-03-18 Integrated circuit manufacturing

Publications (1)

Publication Number Publication Date
ES2150528T3 true ES2150528T3 (es) 2000-12-01

Family

ID=22781941

Family Applications (1)

Application Number Title Priority Date Filing Date
ES95301748T Expired - Lifetime ES2150528T3 (es) 1994-03-18 1995-03-16 Composiciones de desprendimiento que contienen otros corona.

Country Status (8)

Country Link
US (1) US5417802A (es)
EP (1) EP0674231B1 (es)
JP (1) JPH07273074A (es)
KR (1) KR950034566A (es)
DE (1) DE69518682T2 (es)
ES (1) ES2150528T3 (es)
SG (1) SG24106A1 (es)
TW (1) TW295694B (es)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665688A (en) * 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
US5648324A (en) * 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US6133158A (en) * 1998-01-27 2000-10-17 Lucent Technologies Inc. Process for removing alkali metals from solvents used in the manufacture of semiconductor wafers
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
MY129673A (en) 2000-03-20 2007-04-30 Avantor Performance Mat Inc Method and composition for removing sodium-containing material from microcircuit substrates
KR100862301B1 (ko) * 2000-07-16 2008-10-13 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피를 위한 고분해능 오버레이 정렬 방법 및 시스템
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
EP1303793B1 (en) * 2000-07-17 2015-01-28 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
JP2004505273A (ja) * 2000-08-01 2004-02-19 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 転写リソグラフィのための透明テンプレートと基板の間のギャップおよび配向を高精度でセンシングするための方法
US8016277B2 (en) * 2000-08-21 2011-09-13 Board Of Regents, The University Of Texas System Flexure based macro motion translation stage
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US20040038840A1 (en) * 2002-04-24 2004-02-26 Shihying Lee Oxalic acid as a semiaqueous cleaning product for copper and dielectrics
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6980282B2 (en) 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7452574B2 (en) 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
US7759407B2 (en) * 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US20080206991A1 (en) * 2007-02-22 2008-08-28 Nadia Rahhal-Orabi Methods of forming transistor contacts and via openings

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562295A (en) * 1968-12-18 1971-02-09 Du Pont Macrocyclic polyether compounds and ionic complexes thereof
US3813309A (en) * 1969-12-23 1974-05-28 Ibm Method for stripping resists from substrates
US3871929A (en) * 1974-01-30 1975-03-18 Allied Chem Polymeric etch resist strippers and method of using same
US3997562A (en) * 1974-10-01 1976-12-14 E. I. Du Pont De Nemours And Company Macrocyclic polyether/nitrile complexes
US4403029A (en) * 1982-09-02 1983-09-06 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
EP0367074A3 (en) * 1988-10-31 1991-06-12 LeaRonal, Inc. Preparing printed circuit boards for electroplating
EP0578507B1 (en) * 1992-07-09 2005-09-28 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials

Also Published As

Publication number Publication date
TW295694B (es) 1997-01-11
US5417802A (en) 1995-05-23
SG24106A1 (en) 1996-02-10
DE69518682D1 (de) 2000-10-12
KR950034566A (ko) 1995-12-28
EP0674231A1 (en) 1995-09-27
DE69518682T2 (de) 2001-02-01
EP0674231B1 (en) 2000-09-06
JPH07273074A (ja) 1995-10-20

Similar Documents

Publication Publication Date Title
ES2150528T3 (es) Composiciones de desprendimiento que contienen otros corona.
ATE25295T1 (de) Abziehzusammensetzungen und resistabziehverfahren.
ATE280204T1 (de) Nicht-korrodierende entfernungs-und reinigungs- zusammensetzung
ES2183847T3 (es) Composiciones a base de agua que contienen organopolisiloxano, procedimiento para su elaboracion y su uso.
DE3751902D1 (de) Lösungsmittel für Photolack-Zusammensetzungen
BR9806296B1 (pt) compostos de ácido sulfìnico, mistura, composição e uso dos mesmos.
PT81462B (pt) Processo para a preparacao de composicoes para limpeza / desinfeccao contendo inter-halogenios
ATE27274T1 (de) S-triazinderivate und ihre verwendung als lichtschutzmittel.
ATE234625T1 (de) Glp-1 zusammensetzungen mit verlängerter wirkdauer
FI955884A0 (fi) Vesipohjaiset organopolysiloksaanipitoiset koostumukset, niiden valmistusmenetelmä ja käyttö
ES2141183T3 (es) Utilizacion de disolventes de hidrocarburos halogenados.
ATE25435T1 (de) Entschichtungsmittel und verfahren zum entschichten einer photoresistschicht.
AU555867B2 (en) Stripping compositions
AR245494A1 (es) Una composicion detergente.
SE8505247L (sv) Organiska foreningar
ES8403472A1 (es) Procedimiento para la obtencion de un medio para combatir las pestes a base de como minimo de aminocetal.
EA199900304A2 (ru) Замещенные трициклические соединения
ATE555T1 (de) Borsaeureanhydridloesungen und ihre anwendung als haerter fuer phenolformaldehydharze vom resoltyp.
KR850004806A (ko) 양성 포토레지스트 박리조성물(positive photoresist stripping composition)
ATE43339T1 (de) Verfahren zur herstellung von optisch aktiven hydrochinonderivaten sowie von d-alphatocopherol.
PT90696A (pt) Processo de preparacao de novos compostos tri-iodobenzenicos nao ionicos e de produtos de contraste que os contem
MX9301939A (es) Composicion farmaceutica que comprende un compuesto inhibidor de 5-ó-reductasa esteroidal.
JPS5538822A (en) Agent for releasing coating and adhesive
ES2053686T3 (es) Nuevos di(met)acrilatos, procedimiento para su fabricacion y su empleo.
SE8206377D0 (sv) Nya kelatbildande biskinolinforeningar

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 674231

Country of ref document: ES