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ES2135214T3 - Laser. - Google Patents

Laser.

Info

Publication number
ES2135214T3
ES2135214T3 ES96904972T ES96904972T ES2135214T3 ES 2135214 T3 ES2135214 T3 ES 2135214T3 ES 96904972 T ES96904972 T ES 96904972T ES 96904972 T ES96904972 T ES 96904972T ES 2135214 T3 ES2135214 T3 ES 2135214T3
Authority
ES
Spain
Prior art keywords
optical
facets
wave
guide
laser cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96904972T
Other languages
English (en)
Inventor
Robert John Campbell
Richard Wyatt
Gerard Sherlock
Jonathan Richard Armitage
Michael Charles Brierley
Roger Alyn Payne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Application granted granted Critical
Publication of ES2135214T3 publication Critical patent/ES2135214T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

UN LASER COMPRENDE PRIMER Y SEGUNDO ELEMENTOS DE RETROALIMENTACION, QUE DEFINEN UNA CAVIDAD DEL LASER, Y UN MEDIO AMPLIFICADOR DENTRO DE LA CAVIDAD DEL LASER. EL MEDIO AMPLIFICADOR TIENE PRIMERA Y SEGUNDA FACETAS (5, 6), Y UN GUIAONDAS OPTICO (8) PARA GUIAR LA RADIACION OPTICA ENTRE DICHAS PRIMER Y SEGUNDA FACETAS, EN DONDE EL SEGUNDO ELEMENTO DE RETROALIMENTACION ES SELECTIVO EN LONGITUD DE ONDA, Y SE CONFIGURA EL GUIAONDAS OPTICO (8) PARA DIRIGIR LA RADIACION OPTICA CON UN ANGULO {ZE} RESPECTO A LA NORMAL DE LA SEGUNDA FACETA (6).
ES96904972T 1995-03-07 1996-03-07 Laser. Expired - Lifetime ES2135214T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP95301480 1995-03-07
PCT/GB1996/000530 WO1996027929A1 (en) 1995-03-07 1996-03-07 A laser

Publications (1)

Publication Number Publication Date
ES2135214T3 true ES2135214T3 (es) 1999-10-16

Family

ID=8221115

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96904972T Expired - Lifetime ES2135214T3 (es) 1995-03-07 1996-03-07 Laser.

Country Status (8)

Country Link
US (1) US5978400A (es)
EP (1) EP0813761B1 (es)
CN (1) CN1147041C (es)
AU (1) AU4887596A (es)
CA (1) CA2212736C (es)
DE (1) DE69603015T2 (es)
ES (1) ES2135214T3 (es)
WO (1) WO1996027929A1 (es)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2950302B2 (ja) * 1997-11-25 1999-09-20 日本電気株式会社 半導体レーザ
JPH11214799A (ja) * 1998-01-26 1999-08-06 Furukawa Electric Co Ltd:The 半導体レーザモジュール
FR2783933B1 (fr) * 1998-09-24 2000-11-24 Cit Alcatel Composant optique integre
US6293688B1 (en) * 1999-11-12 2001-09-25 Sparkolor Corporation Tapered optical waveguide coupler
JP2001177182A (ja) * 1999-12-16 2001-06-29 Fujitsu Ltd 外部共振器型半導体レーザおよび光導波路装置
US6888863B1 (en) * 2000-06-30 2005-05-03 Lucent Technologies Inc. System comprising optical semiconductor waveguide device
JP2002261385A (ja) * 2001-03-02 2002-09-13 Mitsubishi Electric Corp レーザダイオードモジュール
US20030108080A1 (en) * 2001-08-01 2003-06-12 Binoptics, Inc Unidirectional curved ring lasers
JP4106210B2 (ja) * 2001-11-02 2008-06-25 三菱電機株式会社 光半導体素子
ITMI20020267A1 (it) * 2002-02-12 2003-08-12 Bavelloni Z Spa Macchina automatica per la lavorazione di materiali in lastra in particolare lastre di vetro
JP2003332676A (ja) * 2002-05-08 2003-11-21 Mitsubishi Electric Corp 半導体光装置
US6819702B2 (en) * 2002-09-11 2004-11-16 Bookham Technology Plc Pump laser diode with improved wavelength stability
US7190852B2 (en) * 2002-10-15 2007-03-13 Covega Corporation Semiconductor devices with curved waveguides and mode transformers
US7548567B2 (en) * 2004-04-02 2009-06-16 Vladimir Kupershmidt Analog transmitter using an external cavity laser (ECL)
US20090310634A1 (en) * 2004-04-27 2009-12-17 Oclaro Stabilized laser source with very high relative feedback and narrow bandwidth
US7203409B2 (en) * 2004-08-16 2007-04-10 Covega Corporation Superluminescent diodes having high output power and reduced internal reflections
GB2419033B (en) * 2004-10-08 2009-12-09 Agilent Technologies Inc An integrated modulator / laser assembly and a method of producing same
CN101479897B (zh) * 2006-05-01 2011-05-25 安立股份有限公司 半导体发光元件及可变波长激光器光源
US8615029B2 (en) * 2009-12-30 2013-12-24 Ipg Photonics Corporation Optical device
EP2522057B1 (en) * 2010-01-08 2017-03-22 II-VI Laser Enterprise GmbH Laser system with highly linear output
KR101754280B1 (ko) * 2011-05-04 2017-07-07 한국전자통신연구원 반도체 광 소자 및 그 제조 방법
US9479280B2 (en) * 2011-07-14 2016-10-25 Applied Optoelectronics, Inc. Extended cavity fabry-perot laser assembly capable of high speed optical modulation with narrow mode spacing and WDM optical system including same
US10186836B2 (en) * 2014-10-10 2019-01-22 Nlight, Inc. Multiple flared laser oscillator waveguide
EP3322049B1 (en) * 2015-08-07 2020-06-03 Mitsubishi Electric Corporation Planar waveguide type laser device
WO2022184868A1 (en) * 2021-03-05 2022-09-09 Rockley Photonics Limited Waveguide facet interface
CN115133391A (zh) * 2021-03-26 2022-09-30 山东华光光电子股份有限公司 一种渐变式稳频锁模、超窄线宽大功率基模外腔半导体激光器
CN115764544B (zh) * 2023-01-09 2023-05-12 中国科学院长春光学精密机械与物理研究所 一种高边模抑制比窄线宽外腔激光器及光学设备
CN115764543B (zh) * 2023-01-09 2023-05-12 中国科学院长春光学精密机械与物理研究所 一种抗辐射窄线宽外腔激光器、光学设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3716191A1 (de) * 1986-05-15 1987-11-19 Canon Kk Halbleiterlaser-anordnung
EP0246793A3 (en) * 1986-05-19 1988-06-01 AT&T Corp. High-power, fundamental transverse mode laser
US4821277A (en) * 1987-04-20 1989-04-11 General Electric Company Super-luminescent diode
JPH0682863B2 (ja) * 1987-12-02 1994-10-19 日本電信電話株式会社 発光ダイオード
US5485481A (en) * 1994-06-28 1996-01-16 Seastar Optics Inc. Fibre-grating-stabilized diode laser

Also Published As

Publication number Publication date
EP0813761A1 (en) 1997-12-29
WO1996027929A1 (en) 1996-09-12
CA2212736C (en) 2001-05-29
CA2212736A1 (en) 1996-09-12
AU4887596A (en) 1996-09-23
US5978400A (en) 1999-11-02
DE69603015D1 (en) 1999-07-29
CN1177421A (zh) 1998-03-25
CN1147041C (zh) 2004-04-21
DE69603015T2 (de) 1999-12-23
EP0813761B1 (en) 1999-06-23

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