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EP2704188A3 - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same Download PDF

Info

Publication number
EP2704188A3
EP2704188A3 EP13182287.6A EP13182287A EP2704188A3 EP 2704188 A3 EP2704188 A3 EP 2704188A3 EP 13182287 A EP13182287 A EP 13182287A EP 2704188 A3 EP2704188 A3 EP 2704188A3
Authority
EP
European Patent Office
Prior art keywords
transistor
pattern
insulating layer
gate insulating
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13182287.6A
Other languages
German (de)
French (fr)
Other versions
EP2704188A2 (en
Inventor
Ju-Youn Kim
Bong-Seok Kim
Shigenobu Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of EP2704188A2 publication Critical patent/EP2704188A2/en
Publication of EP2704188A3 publication Critical patent/EP2704188A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A semiconductor device comprises: a semiconductor substrate (100) comprising a first region (I) and a second region (II); and first (TR1) and second (TR2) transistors on the first and second regions, respectively, wherein the first transistor comprises a first gate insulating layer pattern (132), the second transistor comprises a second gate insulating layer pattern (134), the first and second transistors both comprise a work function adjustment film pattern (142) and a gate metal pattern (162), wherein the work function adjustment film pattern (142) of the first transistor comprises the same material as the work function adjustment film pattern (142) of the second transistor and the gate metal pattern (162) of the first transistor comprises the same material as gate metal pattern (162) of the second transistor, and a concentration of a metal contained in the first gate insulating layer pattern (132) to adjust a threshold voltage of the first transistor is different from a concentration of the metal contained in the second gate insulating layer pattern (134) to adjust a threshold voltage of the second transistor.
EP13182287.6A 2012-08-31 2013-08-29 Semiconductor device and method of fabricating the same Withdrawn EP2704188A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120096611A KR20140034347A (en) 2012-08-31 2012-08-31 Semiconductor device and method for fabricating the same

Publications (2)

Publication Number Publication Date
EP2704188A2 EP2704188A2 (en) 2014-03-05
EP2704188A3 true EP2704188A3 (en) 2015-06-17

Family

ID=49035501

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13182287.6A Withdrawn EP2704188A3 (en) 2012-08-31 2013-08-29 Semiconductor device and method of fabricating the same

Country Status (5)

Country Link
US (1) US20140061814A1 (en)
EP (1) EP2704188A3 (en)
KR (1) KR20140034347A (en)
CN (1) CN103681672A (en)
TW (1) TW201409713A (en)

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US8859368B2 (en) * 2012-09-04 2014-10-14 Globalfoundries Inc. Semiconductor device incorporating a multi-function layer into gate stacks
KR102056582B1 (en) * 2013-06-05 2020-01-22 삼성전자 주식회사 Semiconductor device and method for the same
CN105593992B (en) * 2013-09-27 2020-02-14 英特尔公司 Non-planar I/O semiconductor device and logic semiconductor device having different work functions on a common substrate
KR102155511B1 (en) * 2013-12-27 2020-09-15 삼성전자 주식회사 Semiconductor package and method for fabricating the same
US9076869B1 (en) * 2014-01-08 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method
US9236397B2 (en) * 2014-02-04 2016-01-12 Globalfoundries Inc. FinFET device containing a composite spacer structure
US9576952B2 (en) * 2014-02-25 2017-02-21 Globalfoundries Inc. Integrated circuits with varying gate structures and fabrication methods
US9455201B2 (en) 2014-02-25 2016-09-27 Globalfoundries Inc. Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits
US9362180B2 (en) 2014-02-25 2016-06-07 Globalfoundries Inc. Integrated circuit having multiple threshold voltages
KR102212267B1 (en) * 2014-03-19 2021-02-04 삼성전자주식회사 Semiconductor device and method for fabricating the same
US9401362B2 (en) 2014-04-04 2016-07-26 Globalfoundries Inc. Multiple threshold voltage semiconductor device
US9721955B2 (en) 2014-04-25 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for SRAM FinFET device having an oxide feature
KR102218547B1 (en) 2014-06-26 2021-02-22 에스케이하이닉스 주식회사 Semiconductor device and method for fabricating the same
CN105514105B (en) * 2014-09-26 2019-08-06 联华电子股份有限公司 Integrated circuit and forming method thereof
KR102169634B1 (en) * 2014-09-30 2020-10-23 삼성전자주식회사 Nonvolatile memory device
TWI632617B (en) * 2014-11-03 2018-08-11 聯華電子股份有限公司 Semiconductor component and manufacturing method thereof
US9431304B2 (en) * 2014-12-22 2016-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for metal gates
KR102211254B1 (en) * 2015-02-03 2021-02-04 삼성전자주식회사 Semiconductor device and fabricating method thereof
KR102339777B1 (en) * 2015-04-14 2021-12-15 삼성전자주식회사 Semiconductor device
KR102376503B1 (en) * 2015-04-23 2022-03-18 삼성전자주식회사 Integrated circuit device and method for manufacturing the same
US9553090B2 (en) 2015-05-29 2017-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device structure
KR102290685B1 (en) * 2015-06-04 2021-08-17 삼성전자주식회사 Semiconductor device
US9449975B1 (en) 2015-06-15 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices and methods of forming
KR102402761B1 (en) * 2015-10-30 2022-05-26 삼성전자주식회사 Semiconductor device and method for fabricating the same
JP6539578B2 (en) * 2015-12-22 2019-07-03 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment apparatus and heat treatment method
US9748145B1 (en) * 2016-02-29 2017-08-29 Globalfoundries Inc. Semiconductor devices with varying threshold voltage and fabrication methods thereof
CN107170685B (en) * 2016-03-08 2020-02-07 中芯国际集成电路制造(上海)有限公司 Method for forming fin type transistor
US10340268B2 (en) * 2016-10-04 2019-07-02 United Microelectronics Corp. FinFET structure and fabricating method of gate structure
US10515969B2 (en) 2016-11-17 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
CN108122914B (en) 2016-11-30 2019-11-01 中芯国际集成电路制造(上海)有限公司 SRAM device and its manufacturing method
US10651171B2 (en) 2016-12-15 2020-05-12 Taiwan Semiconductor Manufacturing Co. Ltd. Integrated circuit with a gate structure and method making the same
US11121131B2 (en) * 2017-06-23 2021-09-14 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same
KR102293127B1 (en) * 2017-06-23 2021-08-26 삼성전자주식회사 Semiconductor device and method for manufacturing the same
US11114347B2 (en) * 2017-06-30 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Self-protective layer formed on high-k dielectric layers with different materials
KR102316293B1 (en) 2017-09-18 2021-10-22 삼성전자주식회사 Semiconductor devices
KR102418061B1 (en) * 2018-01-09 2022-07-06 삼성전자주식회사 Semiconductor device
KR102481284B1 (en) * 2018-04-10 2022-12-27 삼성전자주식회사 A method of manufacturing semiconductor device
CN110120418B (en) * 2019-05-07 2023-03-24 芯盟科技有限公司 Vertical nanowire transistor and method of forming the same
CN112309845B (en) * 2019-07-31 2023-09-15 中芯国际集成电路制造(上海)有限公司 Semiconductor structures and methods of forming them
US11264477B2 (en) * 2019-09-23 2022-03-01 Globalfoundries U.S. Inc. Field-effect transistors with independently-tuned threshold voltages
US11296202B2 (en) * 2020-04-01 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Memory chip structure having GAA transistors with different threshold voltages and work functions for improving performances in multiple applications
KR20230098672A (en) * 2021-05-12 2023-07-04 양쯔 메모리 테크놀로지스 씨오., 엘티디. Memory peripheral circuit having 3D transistor and method of forming the same

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US20090057769A1 (en) * 2007-08-31 2009-03-05 Andy Wei Cmos device having gate insulation layers of different type and thickness and a method of forming the same
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US20110049642A1 (en) * 2009-08-31 2011-03-03 Thilo Scheiper Work function adjustment in high-k gate stacks including gate dielectrics of different thickness
US20120001259A1 (en) * 2010-07-02 2012-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for improving gate contact
US20120061772A1 (en) * 2010-09-11 2012-03-15 Dechao Guo Transistor having replacement metal gate and process for fabricating the same
US20120132997A1 (en) * 2010-11-29 2012-05-31 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
KR20140034347A (en) 2014-03-20
CN103681672A (en) 2014-03-26
US20140061814A1 (en) 2014-03-06
TW201409713A (en) 2014-03-01
EP2704188A2 (en) 2014-03-05

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