[go: up one dir, main page]

EP2644744A1 - Verfahren zur Förderung der Haftung zwischen dielektrischen Substraten und Metallschichten - Google Patents

Verfahren zur Förderung der Haftung zwischen dielektrischen Substraten und Metallschichten Download PDF

Info

Publication number
EP2644744A1
EP2644744A1 EP12075036.9A EP12075036A EP2644744A1 EP 2644744 A1 EP2644744 A1 EP 2644744A1 EP 12075036 A EP12075036 A EP 12075036A EP 2644744 A1 EP2644744 A1 EP 2644744A1
Authority
EP
European Patent Office
Prior art keywords
solution
substrate
metal
layer
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12075036.9A
Other languages
English (en)
French (fr)
Inventor
Dirk Dr. Tews
Fabian Michalik
Belen Gil Ibànez
Lutz Dr. Brandt
Meng Che Hsieh
Liu Zhiming
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atotech Deutschland GmbH and Co KG
Original Assignee
Atotech Deutschland GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atotech Deutschland GmbH and Co KG filed Critical Atotech Deutschland GmbH and Co KG
Priority to EP12075036.9A priority Critical patent/EP2644744A1/de
Priority to JP2015502219A priority patent/JP6234429B2/ja
Priority to PCT/EP2013/055901 priority patent/WO2013143961A1/en
Priority to EP13710864.3A priority patent/EP2823084B1/de
Priority to US14/385,779 priority patent/US20150050422A1/en
Priority to KR1020147027285A priority patent/KR101927679B1/ko
Priority to TW102111595A priority patent/TWI569704B/zh
Publication of EP2644744A1 publication Critical patent/EP2644744A1/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/22—Roughening, e.g. by etching
    • C23C18/24—Roughening, e.g. by etching using acid aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1641—Organic substrates, e.g. resin, plastic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/22—Roughening, e.g. by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C23C18/285—Sensitising or activating with tin based compound or composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C23C18/405—Formaldehyde
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
    • C25D3/14—Electroplating: Baths therefor from solutions of nickel or cobalt from baths containing acetylenic or heterocyclic compounds
    • C25D3/18—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Definitions

  • the present invention relates to novel processes for metallization of dielectric, substrate surfaces applying silane compositions.
  • the method results in metal plated surfaces exhibiting high adhesion between the substrate and the plated metal while at the same time leaving the smooth substrate surface intact.
  • the surfaces to be metallised are, after an appropriate preliminary treatment, either firstly catalysed and then metallised in an electroless manner and thereafter, if necessary, metallised electrolytically, or are directly electrolytically metallised.
  • EP 0 616 053 A1 there is disclosed a method for direct metallisation of dielectric substrate surfaces, in which the surfaces are firstly treated with a cleaner / conditioner solution, thereafter with an activator solution, for example a palladium colloidal solution, stabilised with tin compounds, and are then treated with a solution which contains compounds of a metal which is more noble than tin, as well as an alkali hydroxide and a complex former. Thereafter the surfaces can be treated in a solution containing a reducing agent, and can finally be electrolytically metallised.
  • an activator solution for example a palladium colloidal solution
  • stabilised with tin compounds stabilised with tin compounds
  • a solution which contains compounds of a metal which is more noble than tin as well as an alkali hydroxide and a complex former.
  • the surfaces can be treated in a solution containing a reducing agent, and can finally be electrolytically metallised.
  • WO 96/29452 concerns a process for the selective or partial electrolytic metallisation of surfaces of substrates made from electrically non-conducting i.e. di-, electric materials which for the purpose of the coating process are secured to plastic-coated holding elements.
  • the proposed process involves the following steps: a) preliminary treatment of the surfaces with an etching solution containing chromium (VI) oxide; followed immediately by b) treatment of the surfaces with a colloidal acidic solution of palladium-/tin compounds, care being taken to prevent prior contact with adsorption-promoting solutions; c) treatment of the surfaces with a solution containing a soluble metal compound capable of being reduced by tin (II) compounds, an alkali or alkaline earth metal hydroxide, and a complex forming agent for the metal in a quantity sufficient at least to prevent precipitation of metal hydroxides; d) treatment of the surfaces with an electrolytic metallisation solution.
  • Such method is particularly suitable for ABS (acrylbutadience styrole
  • conductive polymers can be formed on the dielectric substrate surface to provide a first conductive layer for subsequent metal plating of the surface.
  • US 2004/0112755 A1 describes direct electrolytic metallization of electrically non-conducting substrate surfaces comprising bringing the substrate surfaces into contact with a water-soluble polymer, e.g. a thiophene; treating the substrate surfaces with a permanganate solution; treating the substrate surfaces with an acidic aqueous solution or an acidic microemulsion of aqueous base containing at least one thiophene compound and at least one alkane sulfonic acid selected from the group comprising methane sulfonic acid, ethane sulfonic acid and ethane disulfonic acid; electrolytically metallizing the substrate surfaces.
  • a water-soluble polymer e.g. a thiophene
  • a permanganate solution treating the substrate surfaces with an acidic aqueous solution or an acidic microemulsion of aqueous base containing at least one thiophene compound and at least one alkane sulfonic acid selected from the group comprising
  • US 5,693,209 is directed to a process for directly metallizing a circuit board having nonconductor surfaces, includes reacting the nonconductor surface with an alkaline permanganate solution to form manganese dioxide chemically adsorbed on the nonconductor surface; forming an aqueous solution of a weak acid and of pyrrole or a pyrrole derivative and soluble oligomers thereof; contacting the aqueous solution containing the pyrrole monomer and its oligomers, with the nonconductor surface having the manganese dioxide adsorbed chemically thereon to deposit an adherent, electrically conducting, insoluble polymer product on the nonconductor surface; and directly electrodepositing metal on the nonconductor surface having the insoluble adherent polymer product formed thereon.
  • the oligomers are advantageously formed in aqueous solution containing 0.1 to 200 g/l of the pyrrole monomer at a temperature between room temperature and the freezing point of the solution.
  • US 4,976,990 relates to the metallization of dielectric substrate surfaces, particularly to the electroless metallization of dielectric through-hole surfaces in double-sided or multi-layer printed circuit boards.
  • the methods involves roughening the surface and subsequently applying a silane composition to such treated surface. Substantial roughening of the surface occurs if the process is performed in this sequence of treatment steps.
  • a rough surface imparts the functionality of the metal plated surface, e.g with regards to its use as conductor lines in electronics applications.
  • This object is achieved by a method for treating a surface of a dielectric substrate to prepare said surface for subsequent wet chemical metal plating, such method comprising in this order the steps of
  • the substrate is first treated in step (i) with a composition containing an organosilane compound.
  • the organosilane compound is applied as a solution, preferably a solution of an organic solvent having a high boiling point, preferably in the range of 60 to 250 °C and more preferred in the range of 80 to 200 °C.
  • Organic solvents within the meaning of this invention are polar organic solvents suitable to dissolve silane compounds.
  • Suitable organic solvents comprise alcohols, ethers, amines, and acetates. Examples are ethanol, 2-propanol, tetrahydrofuran, ethylene glycol, diethyleneglycol, 2-isopropoxyethanol (IPPE), di(propyleneglycol)methyletheracetate (DPGMEA), 2-ethyl-1-hexanol, glycerine, dioxin, butyrolacton, N-methyl pyrrolidone (NMP), dimethyl formamide, dimethylacetamide, ethanolamine, propylene glycol methyl ether acetate (PMA), half ethers and half esters of ethylene glycols.
  • IPPE 2-isopropoxyethanol
  • DPGMEA di(propyleneglycol)methyletheracetate
  • NMP N-methyl pyrrolidone
  • PMA propylene glycol methyl ether acetate
  • PMA propylene glycol methyl ether acetate
  • the concentration of the organosilane can vary over a wide range depending on the application and the specific organosilane compound.
  • the suitable concentration can be obtained by routine experiments. Suitable concentration generally vary between as low as 0.2 wt.% to 30 wt.%, preferably between 0.5 wt.% to 20 wt.%, even more preferred between 1 wt.% and 8 wt.%.
  • Contacting the dielectric substrates with a solution containing organosilanes according to method step (i). is performed by dipping or immersing the substrates into said solution; or by spraying the solution to the substrates.
  • Contacting the substrate with a solution containing organosilanes according to method step (i). is performed at least once. Alternatively said contacting can be performed several times, preferably between 2 to 10 times, more preferred between 2 to 5, even more preferred between 1 to 3 times. Most preferred contacting is once to twice.
  • step (i). Contacting the substrate with a solution containing organosilanes according to method step (i). is performed for a time period ranging from 10 seconds to 20 minutes, preferred from 10 seconds to 10 minutes, most preferred from 10 seconds to 5 minutes.
  • step i. Contacting the substrate with a solution containing organosilane according to method step i. is performed at a temperature ranging from 15 to 100°C, preferred from 20 to 50°C, most preferred from 23 to 35 °C.
  • the organosilane compound is preferably selected from the group represented by the following formula A (4-x) SiB x wherein each A is independently a hydrolyzable group, x is 1 to 3, and each B is independently selected from the group consisting of C 1 -C 20 alkyl, aryl, amino aryl and a functional group represented by the formula C n H 2n X, wherein n is from 0 to 15, preferably 0 to 10 even more preferably 1 to 8, most preferably 1, 2, 3, 4 and X is selected from the group consisting of amino, amido, hydroxy, alkoxy, halo, mercapto, carboxy, carboxy ester, carboxamide, thiocarboxamide, acyl, vinyl, allyl, styryl, epoxy, epoxycyclohexyl, glycidoxy, isocyanato, thiocyanato, thioisocyanato, ureido, thioureido, guanidino, thio
  • the hydrolyzable group A is selected from the group consisting of - OH, -OR 1 and wherein R 1 is C 1 -C 5 alkyl, - (CH 2 ) y OR 2 and wherein y is 1, 2 or 3 and R 2 is H or C 1 -C 5 alkyl, -OCOR 3 and and wherein R 3 is H or C 1 -C 5 alkyl.
  • B is an alkyl group it is preferably a C 1 -C 10 alkyl, even more preferred C 1 -C 5 alkyl group like methyl, ethyl, propyl or isopropyl.
  • Preferred aryl groups are phenyl- and benzyl-groups, either substituted or unsubsituted.
  • a preferred amino aryl group is -NH(C 6 H 5 ).
  • X amino comprises alkylamine- or arylamine substitued amines like 3-(N-Styrylmethyl-2-aminoethylamino).
  • R preferably is methyl, ethyl, propyl or isopropyl.
  • Examples of particular classes of compounds within the formulas above are vinylsilanes, aminoalkylsilanes, ureidoalkylsilane esters, epoxyalkylsilanes and methacryloalkylsilane esters, in which the reactive organic functions are, respectively, vinyl, amino, ureido, epoxy and methacryloxy.
  • Examples of the vinylsilanes are vinyltrichlorosilane, vinyltriethoxysilane, vinyltrimethoxysilane, vinyl-tris-(beta(2)-methoxyethoxy) silane and vinyltriacetoxysilane.
  • aminoalkylsilanes which are the preferred organosilanes for use in the present invention, are gamma(3)-aminopropyltriethoxysilane, gamma-aminopropyltrimethoxysilane, N-beta-(Aminoethyl)-gamma-aminopropyltrimethoxysilane, and N'-(beta-aminoethyl)-N-(beta-aminoethyl)-gamma-aminopropyltrimethoxysilane.
  • a suitable ureidoalkylsilane ester is gammaureidoalkyl-triethoxysilane, while suitable expoxyalkylsilanes are beta-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane and gammaglycidoxypropyltrimethoxysilane.
  • Useful methacryloxysilane esters are gamma-methacryloxypropyltrimethoxy silane and gamma-methacryloxypropyl-tris-(beta-methoxyethoxy) silane.
  • the at least one organosilane compound can either be a monomeric organosilane compound or an oligomeric organosilane compound which is obtained by a (partial) hydrolyzation and condensation of a monomeric organosilane compound according to the present invention prior to the deposition onto the surface of the dielectric substrate.
  • organosilane compounds The hydrolysis and condensation of organosilane compounds is well known in the art.
  • the monomeric organosilane compound is reacted with an acidic catalyst, for example, acetic acid or diluted hydrochloric acid leading to a clear solution of an oligomeric organosilane compound derived from the monomeric organosilane compound.
  • an acidic catalyst for example, acetic acid or diluted hydrochloric acid leading to a clear solution of an oligomeric organosilane compound derived from the monomeric organosilane compound.
  • Such oligomeric silanes derived from monomeric organosilane compound according to the present by hydrolization shall be included into the scope of the present invention.
  • the substrate can be heat treated after method step (i).
  • Such treatment is generally performed at a temperature between 60 - 200 °C, more preferred between 80-150 °C.
  • the treatment time can vary, e.g. between 1 and 30 minutes, preferred between 1 and 10 minutes.
  • step (ii) the substrate is treated with a solution comprising an oxidizing agent in step (ii).
  • the oxidizing agent can be an aqueous acidic or alkaline solution of permanganate, hydrogen peroxide and sulphuric acid or chromic acid.
  • Alkaline solutions of permanganate e.g. sodium or potassium permanganate are preferred.
  • the solution preferably contains 20-100 g/l permanganate ions and 10-40 g/l hydroxide ions.
  • a preferred hydroxide ion source is sodium or potassium hydroxide.
  • step (ii). Contacting the dielectric substrates with a solution containing an oxidizing agent according to method step (ii). is performed by dipping or immersing the substrates into said solution; or by spraying the solution to the substrates.
  • step (ii). Contacting the substrate with a solution containing an oxidizing agent according to method step (ii). is performed for a time period ranging from 30 seconds to 30 minutes, preferred from 30 seconds to 10 minutes.
  • step (ii) Contacting the substrate with a solution containing an oxidizing agent according to method step (ii) is performed at a temperature ranging from 20 to 95°C, preferred from 50 to 85 °C.
  • a surface roughness Ra of less than150 nm can be between 50 and 150 nm, preferably between 60 and 130 nm and even more preferably between 70 and 120 nm.
  • Metallization is performed by a wet chemical plating method.
  • Such plating method comprises electroless, immersion and electrolytic plating processes, usually performed in aqueous solution.
  • the dielectric substrates to be metallized can be selected from the group comprising plastics, plastic-glass, and plastic-ceramic composites.
  • Plastics can be selected from the group comprising acrylnitrile-butadiene-styrol-copolymer (ABS copolymer); polyamide; a mixture of an ABS copolymer and at least one other polymer which is different to the ABS copolymer; polycarbonate (PC); ABS/PC blends; epoxy resin; bismaleimide-triazine resin (BT); cyanate ester resin; polyimide; polyethylene terephthalate (PET); polybutylene terephthalate (PBT); polylactic acid (PLA); polypropylene (PP); and polyester.
  • ABS copolymer acrylnitrile-butadiene-styrol-copolymer
  • PC polycarbonate
  • ABS/PC blends ABS/PC blends
  • epoxy resin bismaleimide-triazine resin
  • BT bismaleimide-triazine resin
  • PBT polycyanate ester resin
  • polyimide polyethylene terephthalate
  • PET polybutylene tere
  • dielectric substrates used in the manufacture of printed circuit boards can be used.
  • Such material typically consists of epoxy based material, for example epoxy blends like epoxy-benzotriazole blends, epoxy-cyanate-blends, epoxy-propylene blends, or epoxy-polyimide blends.
  • step (iii) several methods for plating a metal onto a substrate by applying a wet-chemical plating method are known to the person skilled in the art.
  • the wet chemical plating method preferably is an electrolytic plating method, an immersion plating process or an electroless plating method.
  • Dielectric substrates e.g. plastic objects can then be metallized after activation by using an electroless metallising method or alternatively by using a direct plating method (electrolytic plating method).
  • the object is first cleaned followed by application of e.g. a noble metal or conductive polymer and then finally metallised.
  • a typically activation of dielectric substrates like printed circuit boards for subsequent metal plating is performed as follows:
  • the first conductive layer comprises copper and is deposited by electroless plating.
  • the substrate is activated by e.g., deposition of a noble metal containing colloid or a solution comprising noble metal ions prior to electroless deposition of copper.
  • the most preferable activation is by deposition of palladium-tin colloids or palladium ions. Such methods are established in the arts and known to the skilled person.
  • An exemplary and non-limiting pretreatment process may comprise the following steps
  • the method according to the present invention is particularly suitable for manufacture of fine line circuitry. This is shown in Fig. 1 .
  • a method for manufacture of fine line circuitry known in the art is the semi-additive process (SAP) which starts from a bare dielectric build-up layer (1) having on at least a portion of the back side a copper area which can be for example a contact area (2), and a second dielectric layer (3) attached to the back side of the dielectric build-up layer (1).
  • SAP semi-additive process
  • a substrate is shown in Fig. 1 a.
  • At least one opening (4) such as a blind micro via is formed by e.g. laser drilling in the build-up layer (1) which extends through the substrate to the copper area (2) on the back side of the build-up layer (1) ( Fig. 1 b) .
  • the dielectric surface of the build-up layer (1) is subjected to a desmear process in the next step which leads to a roughened top surface (5a) of the build-up layer (1) and a roughened surface (5b) of the dielectric side walls of the at least one opening (4) ( Fig. 1 c) .
  • a conductive seed layer (6) is deposited by electroless plating onto the roughened top surface (5a) of the build-up layer (1) and the roughened side walls (5b) of the at least one opening (4) ( Fig. 1 d) .
  • Such a conductive layer (6) usually has a thickness of 0.8 ⁇ m to 1.5 ⁇ m which is a) required to provide a sufficient electrical conductivity on the roughened top surface (5a) for successive electroplating of copper and b) to ensure that during electroless plating of copper also a sufficient electrical conductivity is provided to the roughened side walls (5b) of the at least one opening (4).
  • a thicker layer of copper (8) is then selectively electroplated into openings of a patterned resist layer (7) onto the roughened and activated top surface of the build-up layer (1) and the roughened and activated dielectric walls of the at least one opening (4) ( Fig. 1 e to f ).
  • the patterned resist layer (7) is removed ( Fig. 1 g) and those portions of the conductive layer (6) which are not covered by electroplated copper (8) are removed by differential etching ( Fig. 1 h) .
  • Such a process is for example disclosed in US 6,278,185 B1 and US 6,212,769 B1 .
  • a method for manufacturing fine line circuitry on a printed circuit board comprises, in this order, the following steps
  • Dielectric substrates e.g. plastic objects can then be metallized after activation by using an electroless metallising method or alternatively by using a direct plating method (electrolytic plating method).
  • the object is first cleaned followed by application of e.g. a noble metal or conductive polymer and then finally metallised.
  • a typically activation of dielectric substrates for subsequent metal plating is performed as follows:
  • the plastic is activated for electroless metallisation using an activator which contains a noble metal and then electrolessly metallised.
  • a thicker metal layer can then also be applied electrolytically afterwards.
  • the etched surface is usually treated with a palladium colloid solution and then with an alkaline solution which contains copper ions forming a complex with a complexing agent. Thereafter the object can then be electrolytically metallised directly ( EP 1 054 081 B1 ).
  • step (iii) would involve the following steps:
  • At least one of the following additional method steps are performed in the overall process step iii.
  • these further method steps are carried out when the objects or the substrates are to be metallised using an electroless metallisation method which means that a first metal layer is applied on the objects or the substrates using an electroless method.
  • the accelerating solution preferably serves to remove components of the colloid solution according to method step iiia., for example a protective colloid.
  • a solution of an acid is preferably used as an accelerating solution, for example sulfuric acid, hydrochloric acid, citric acid or also tetrafluoroboric acid, in order to remove the protective colloid (tin compounds).
  • the reducing agent solution is used if a solution of a noble metal ion is used in method step (ii)a., for example a hydrochloric acid solution of palladium chloride or an acid solution of a silver salt.
  • the reducing agent solution in this case is also a hydrochloric acid solution and, for example, contains tin(II) chloride, or it contains another reducing agent such as NaH 2 PO 2 or a borane or boron hydride, such as an alkali or earth alkali borane or dimethylaminoborane.
  • the objects or the substrates are not metallised electrolessly but are to be directly metallised using an electrolytic metallisation process (without electroless metallisation).
  • the method steps iiid., iiie. and iiif. are performed in the sequence given, but not necessarily immediately one after the other. For example, a plurality of rinsing steps can be performed after said method steps. In this embodiment the method steps iid. and iie. act as an activation step.
  • the conversion solution preferably serves to create a sufficiently electrically conductive layer on the surface of the objects or the substrates in order to subsequently allow direct electrolytic metallisation, without preceding electroless metallisation.
  • the colloid of the colloid solution according to method step iid. is a palladium/tin colloid then an alkaline solution containing copper ions complexed with a complexing agent is preferably used as a conversion solution.
  • the conversion solution can contain an organic complexing agent such as tartaric acid or ethylenediaminetetraacetic acid and/or one of its salts, such as a copper salt, such as copper sulfate:
  • the conversion solution can comprise:
  • the treatment liquids described below are preferably aqueous.
  • the solution of the colloid of the noble metal of Group VIIIB or IB of the Periodic Table of the Elements used in the activation step is an activator solution containing a palladium/tin colloid.
  • This colloid solution preferably contains palladium chloride, tin(II) chloride and hydrochloric acid or sulfuric acid.
  • the concentration of the palladium chloride is preferably 5 - 200 mg/l, particularly preferred 20-100 mg/l and most preferred 30 - 60 mg/l, based on Pd 2+ .
  • the concentration of the tin(II) chloride is preferably 0.5 - 20 g/l, particularly preferred 1 - 10 g/l and most preferred 2-6 g/l, based on Sn 2+ .
  • the concentration of the hydrochloric acid is preferably 100 - 300 ml/I (37% by weight of HCl).
  • a palladium/tin colloid solution also preferably contains tin(IV) ions which are generated through oxidation of the tin(II) ions.
  • the temperature of the colloid solution is preferably 20 - 50°C and particularly preferred 30 - 40°C.
  • the treatment time is preferably 0.5 - 10 min, particularly preferred 2-5 min and most preferred 3.5 - 4.5 min.
  • the colloid solution can also contain another metal of Group VIIIB or IB of the Periodic Table of the Elements, for example platinum, iridium, rhodium, gold or silver or a mixture of these metals. It is basically possible for the colloid not to be stabilised with tin ions as a protective colloid but rather another protective colloid being used instead, for example an organic protective colloid like polyvinyl alcohol.
  • a solution of a noble metal ion is used instead of a colloid solution in the activation step, preferably a solution is used which contains an acid, in particular hydrochloric acid, and a noble metal salt.
  • the noble metal salt can, for example, be a palladium salt, preferably palladium chloride, palladium sulfate or palladium acetate, or a silver salt, for example silver acetate.
  • a noble metal complex can also be used, for example a palladium complex salt such as a salt of a palladium-amino complex.
  • the noble metal compound is present, for example, in a concentration of 20 mg/l to 200 mg/l, based on the noble metal, for example based on Pd 2+ .
  • the solution of the noble metal compound can be used at 25°C or at a temperature from 15°C to 70°C.
  • the objects or the substrates are preferably first brought into contact with a pre-dipping solution which has the same composition as the colloid solution but without the metal of the colloid and its protective colloid, which means that this solution, in the case of a palladium/tin colloid solution, just contains hydrochloric acid if the colloid solution also contains hydrochloric acid.
  • a pre-dipping solution which has the same composition as the colloid solution but without the metal of the colloid and its protective colloid, which means that this solution, in the case of a palladium/tin colloid solution, just contains hydrochloric acid if the colloid solution also contains hydrochloric acid.
  • the objects or the substrates After treating the objects or the substrates with the colloid solution these are typically rinsed and then brought into contact with the accelerating solution in order to remove the protective colloid from the surface of the objects or the substrates.
  • the objects or the substrates are treated with a solution of a noble metal ion instead of a colloid solution they will be subjected to a reduction treatment after first being rinsed.
  • the reducing agent solution used for these cases typically contains hydrochloric acid and tin(II) chloride.
  • the solution of the noble metal compound is a hydrochloric acid solution of palladium chloride. It is, however, preferable to use an aqueous solution of NaH 2 PO 2 .
  • the solution of the noble metal compound is a neutral or alkaline solution of a complex stabilized Pd sulphate or chloride, it is preferable to use an aqueous solution of DMAB (dimethyl aminoborane) or sodium borohydride in the reduction treatment.
  • DMAB dimethyl aminoborane
  • the objects or the substrates can first be rinsed after the acceleration or treatment with reducing agent solution and then electrolessly plated with nickel, for example.
  • a conventional nickel bath will serve to do this which, for example, contains a number of substances including nickel sulfate, a hypophosphite, for example sodium hypophosphite, as a reducing agent, and organic complexing agents and pH adjusting agents (for example a buffer).
  • an electroless copper bath which typically contains a copper salt, for example copper sulfate or copper hypophosphite, and also a reducing agent such as formaldehyde or a hypophosphite salt, for example an alkali or ammonium salt, or hypophosphorous acid, and also one or more complexing agents such as tartaric acid, as well as a pH adjusting agent such as sodium hydroxide.
  • a copper salt for example copper sulfate or copper hypophosphite
  • a reducing agent such as formaldehyde or a hypophosphite salt, for example an alkali or ammonium salt, or hypophosphorous acid
  • complexing agents such as tartaric acid
  • pH adjusting agent such as sodium hydroxide
  • Any metal depositing baths can be used for the subsequent electrolytic metallisation, for example for depositing nickel, copper, silver, gold, tin, zinc, iron, lead or their alloys.
  • This type of depositing bath is well known to the person skilled in the art.
  • a Watts nickel bath is normally used as a bright nickel bath which contains nickel sulfate, nickel chloride and boric acid as well as saccharine as an additive.
  • As a bright copper bath a composition is used which, for example, contains copper sulfate, sulfuric acid, sodium chloride as well as organic sulfur compounds, in which the sulfur is present in a low oxidation stage, for example as an organic sulfide or disulfide, as additives.
  • an electrolytic metallisation bath for example a nickel strike bath, which is preferably composed on the basis of a Watts nickel bath.
  • nickel strike bath which is preferably composed on the basis of a Watts nickel bath.
  • These types of baths for example contain nickel sulfate, nickel chloride and boric acid and saccharine as an additive.
  • Treatment of the objects or the substrates according to the method according to the invention is preferably performed in a conventional dipping process in which the objects or the substrates are dipped subsequently in solutions in containers in which the respective treatment takes place.
  • the objects or the substrates can either be fastened to racks or filled into drums and dipped in the solutions. Fastening to racks is preferred because a more directed transmission of the ultrasound energy to the objects or the substrates is possible via the racks.
  • the objects or the substrates can be treated in so-called conveyorized processing plants in which they lay, for example, on racks and are continuously transported in a horizontal direction through the plant and treated with ultrasound, as required.
  • direct metallization can be obtained by employing a conductive polymer to the surface of a dielectric substrate as for example described in US 2004/0112755 A1 , US 5,447,824 , and WO 89/08375 A .
  • EP 0 457 180 A2 discloses a method for metallizing dielectric substrates, this method comprising first forming a manganese dioxide layer on the substrate and then treating the surfaces with an acidic solution containing pyrrole and methane sulfonic acid. Instead of pyrrole the solution may also contain thiophene. Due to this treatment an electrically conducting polymer layer is formed. This electrically conducting layer may finally be electrolytically metallized. Alternatively, thiophene and aniline instead of pyrrole can be applied. Such method is suitable to be used as an activation step and subsequently to metallize non conductive substrates according to the present invention.
  • the substrate is a dielectric and the following further method steps are performed for metallization of the substrate in step iii.:
  • the water-soluble polymer used in step ic. preferably is selected from the group consisting of polyvinyl amine, polyethylene imine, polyvinyl imidazole, alkylamine ethylene oxide copolymers, polyethylene glycol, polypropylene glycol, copolymers of ethylene glycol and polypropylene glycol, polyvinyl alcohol, polyacrylates, polyacrylamide, polyvinylpyrrolidone and mixtures thereof.
  • concentration of the water-soluble polymer ranges from 20 mg/l to 10 g/l.
  • the solution of a water-soluble polymer may further contain a water-soluble organic solvent selected from the group consisting of ethanol, propanol, ethylene glycol, diethyleneglycol, glycerine, dioxin, butyrolacton, N-methyl pyrrolidone, dimethyl formamide, dimethylacetamide, half ethers and half esters of ethylene glycol.
  • the water-soluble organic solvent may be utilized either in pure form or diluted with water.
  • the concentration of the water-soluble organic solvent ranges from 10 ml/l to 200 ml/l.
  • the solution of a water-soluble polymer is held at a temperature in the range of 25°C to 85 °C and the dielectric substrate is immersed in this solution for 15 s to 15 min during step ic.
  • the dielectric substrate is treated with a permanganate solution in step id.
  • the source of permanganate ions can be any water-soluble permanganate compound.
  • the source of permanganate ions is selected from sodium permanganate and potassium permanganate.
  • the concentration of permanganate ions ranges from 0.1 mol/l to 1.5 mol/I.
  • the permanganate solution can be either acidic or alkaline.
  • the permanganate solution has a pH value in the range of 2.5 to 7.
  • a layer of MnO 2 is formed on the side walls of a blind micro via (BMV).
  • the substrate is then contacted in step ie. with a solution comprising preferably a thiophene compound and an alkane sulfonic acid.
  • the thiophene compound is preferably selected from 3-heterosubstituted thiophenes and 3,4-heterosubstituted thiophenes. Most preferably, the thiophene compound is selected from the group consisting of 3,4-ethylene dioxythiophene, 3-methoxy thiophene, 3-methyl-4-methoxy thiophene and derivatives thereof.
  • the concentration of the thiophene compound ranges from 0.001 mol/l to 1 mol/l, more preferably from 0.005 mol/l to 0.05 mol/l.
  • the alkane sulfonic acid is selected from the group comprising methane sulfonic acid, ethane sulfonic acid, methane disulfonic acid, ethane disulfonic acid and mixtures thereof.
  • the concentration of the alkane sulfonic acid is set by adjusting the desired pH value of the solution utilized in step ie.
  • the pH value of said solution is set in the range of 0 to 3, more preferably in the range of 1.5 to 2.1.
  • Sample Nos. P1, P6 through P9, and P11 through P20 were first treated with a silane composition and then treated in an aqueous solution containing MnO 4 -ions.
  • sample No. P2 the process sequence was changed: treatment in an aqueous solution containing MnO 4 -ions was first and then followed by treatment in the silane composition (comparative example).
  • sample No. P3 the treatment in an aqueous solution containing MnO 4 -ions was omitted and only the silane composition was applied (also comparative example).
  • Sample No. P4 was processed in an aqueous solution containing MnO 4 -ions only, without any silane treatment (comparative example). Samples Nos.
  • P5 and P10 were first treated with the solvent matrix without the silane compound and then treated in an aqueous solution containing MnO 4 -ions (comparative examples).
  • the permanganate treatment step was always followed by a reducer step to remove the manganese(IV)oxide.
  • the corresponding process conditions are provided in Table 1.
  • compositions are provided in Table 1. Treatment time was 1 min at ambient temperature.
  • the base material used was an epoxy resin ABF GX92 from Ajinomoto Co.; Inc.For the experiments, samples (7.5 x 15 cm) were cut out of panels laminated and pre-cured for 30 minutes at a temperature of 100°C followed by 30 minutes at a temperature of 180 °C.
  • Silane application The solution (excluding example P4 ) was sprayed onto the substrate using the ExactaCoat spray device by Sonotek. For examples P5 and P10 the solvent does not contain a silane and was applied the same way. Following parameters were set for all investigations: Flow rate: 1.4 ml/min. (6 ml/min.) Nozzle Distance: 4 cm Nozzle Speed: 40 mm/s Overlap: 14.2 mm Nitrogen flow: 0.8 - 1.0 mPa
  • Sample P2 was first processed through the permanganate etchant and reduction solution and sprayed afterwards. No second MnO 4 -etch step was included. Table 1 : Sample names and process conditions. Exp. No. Silane (3% wt.) Solvent Treatment Peel Strength N/cm Average Roughness (Ra) nm 1. Silane; P1 3-Aminopropyltriethoxysilane IPA 2. Mn04 + Reducer 5.53 102 1. Mn04 + Reducer; P2* Aminopropyltriethoxysilane IPA 2. Silane 0.86 96 P3* Aminopropyltriethoxysilane IPA only Silane 0.08 80 P4* No No only Mn04 + Reducer 0.78 96 1.
  • Figure 2 shows a surface after permanganate treatment of GX92 substrate material according to example P20. Measurement was performed on a Zeiss Gemini SEM, voltage 5 kV, magnification: 5000 x.
  • the roughness Ra measured was 109 nm measured by an Olympus LEXT 3000 confocal laser microscope.
  • Figure 3 shows an SEM image of a surface after permanganate treatment without prior application of a silane of GX92 substrate material. This corresponds to a method known in the art involving a waterbased Sweller followed by Permanganate-Etching.
  • Permanganate concentration was 60 g/l, NaOH conc. 45 g/l, treatment time 20 minutes, and temperature 80°C.
  • the roughness Ra measured by above mentioned confocal laser microscope was 200 nm. Such roughness can be too high for manufacture of fine line circuitry.
  • Table 2 comprises of the process sequence applied to finally deposit 0.8 ⁇ m of electroless copper and 30 ⁇ m electrolytically deposited copper on GX92 substrate material.
  • Table 2 Parameters used for subsequent metal plating Step No. Name T [°C] t [min] 1 Permanganate Etch (45 g/l MnO 4 - , 45 g/l NaOH) 75 15 Dl Rinse 2 MnO 4 Reduction sol.
  • Peel strength measurements of the plated metal layer to the substrate were performed by routing the samples in stripes of 1 cm width and 3 cm length after final annealing. Peel strength measurements were performed with an Erichsen Wuppertal 708 strain gauge using a Chatillon LTCM-6 pulling mechanism The adhesion values for all samples are depicted in Table 1, 5 th ("Peel") column.
  • FE-SEM Field Emission Scanning Electron Microscopy
  • adhesion values typically of greater than 4-5 N/cm are required. This depends on the type of application.
  • Average roughness values (Ra) were measured on an Olympus LEXT 3000 confocal laser microscope. Roughness values were gathered over a surface area of 120 ⁇ m by 120 ⁇ m. The average roughness values (Ra) for all samples are depicted in Table 1, 6 th column (Average Roughness Ra).
  • the low roughness values of the treated samples render the process suitable for manufacture of circuit traces which are smaller than 10 um width.
  • surface roughness values over 150 nm were hitherto required to achieve sufficient adhesion between the substrate and the plated metal layer.
  • average roughness values higher than 150 nm may be too high for circuit traces smaller than 10 um in width.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electroplating Methods And Accessories (AREA)
EP12075036.9A 2012-03-29 2012-03-29 Verfahren zur Förderung der Haftung zwischen dielektrischen Substraten und Metallschichten Withdrawn EP2644744A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP12075036.9A EP2644744A1 (de) 2012-03-29 2012-03-29 Verfahren zur Förderung der Haftung zwischen dielektrischen Substraten und Metallschichten
JP2015502219A JP6234429B2 (ja) 2012-03-29 2013-03-21 誘電体基板と金属層との間の密着性を促進するための方法
PCT/EP2013/055901 WO2013143961A1 (en) 2012-03-29 2013-03-21 Method for promoting adhesion between dielectric substrates and metal layers
EP13710864.3A EP2823084B1 (de) 2012-03-29 2013-03-21 Verfahren zur förderung der haftung zwischen dielektrischen substraten und metallschichten
US14/385,779 US20150050422A1 (en) 2012-03-29 2013-03-21 Method for promoting adhesion between dielectric substrates and metal layers
KR1020147027285A KR101927679B1 (ko) 2012-03-29 2013-03-21 유전체 기판과 금속 층 사이에 접착을 증진시키는 방법
TW102111595A TWI569704B (zh) 2012-03-29 2013-03-29 增進介電基板與金屬層間黏著度的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP12075036.9A EP2644744A1 (de) 2012-03-29 2012-03-29 Verfahren zur Förderung der Haftung zwischen dielektrischen Substraten und Metallschichten

Publications (1)

Publication Number Publication Date
EP2644744A1 true EP2644744A1 (de) 2013-10-02

Family

ID=47902006

Family Applications (2)

Application Number Title Priority Date Filing Date
EP12075036.9A Withdrawn EP2644744A1 (de) 2012-03-29 2012-03-29 Verfahren zur Förderung der Haftung zwischen dielektrischen Substraten und Metallschichten
EP13710864.3A Active EP2823084B1 (de) 2012-03-29 2013-03-21 Verfahren zur förderung der haftung zwischen dielektrischen substraten und metallschichten

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP13710864.3A Active EP2823084B1 (de) 2012-03-29 2013-03-21 Verfahren zur förderung der haftung zwischen dielektrischen substraten und metallschichten

Country Status (6)

Country Link
US (1) US20150050422A1 (de)
EP (2) EP2644744A1 (de)
JP (1) JP6234429B2 (de)
KR (1) KR101927679B1 (de)
TW (1) TWI569704B (de)
WO (1) WO2013143961A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2917916A1 (en) 2013-07-09 2015-02-05 United Technologies Corporation Plated polymer nosecone
EP3019710A4 (de) 2013-07-09 2017-05-10 United Technologies Corporation Beschichteter polymerlüfter
WO2015006438A1 (en) 2013-07-09 2015-01-15 United Technologies Corporation Plated polymer compressor
CA2917874A1 (en) * 2013-07-09 2015-01-15 United Technologies Corporation Plating adhesion promotion
WO2015006406A1 (en) 2013-07-09 2015-01-15 United Technologies Corporation Plated tubular lattice structure
DE102014017886A1 (de) * 2014-12-04 2016-06-09 Auto-Kabel Management Gmbh Verfahren zum Herstellen eines elektrischen Anschlussteils
SG11201704871QA (en) * 2014-12-22 2017-07-28 Atotech Deutschland Gmbh Method for electromagnetic shielding and thermal management of active components
JP6814028B2 (ja) * 2016-11-17 2021-01-13 上村工業株式会社 プリント配線基板の製造方法
KR101994753B1 (ko) * 2017-06-30 2019-07-01 삼성전기주식회사 커패시터 부품
CN108037161A (zh) * 2017-12-26 2018-05-15 南方科技大学 一种基于氟化咪唑离子凝胶的二氧化碳气体传感器及其制备方法和用途
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
KR20210064266A (ko) * 2018-09-20 2021-06-02 재단법인 공업기술연구원 얇은 유리 상의 유리-관통 비아를 위한 구리 금속화
DE102020123633A1 (de) * 2020-09-10 2022-03-10 Pac Tech - Packaging Technologies Gmbh Verfahren zum stromlosen Aufbringen einer Metallschicht auf ein Substrat
JP7589431B2 (ja) * 2021-02-08 2024-11-26 マクダーミッド エンソン インコーポレイテッド 拡散バリア形成のための方法及び湿式化学組成物

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988002412A1 (en) * 1986-09-30 1988-04-07 Macdermid, Incorporated Process for metallizing non-conductive substrates
EP0322233A2 (de) * 1987-12-21 1989-06-28 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung von feinsten Metallfilmen und feinsten Metallbildern
WO1989008375A1 (en) 1988-03-03 1989-09-08 Blasberg-Oberflächentechnik Gmbh New through-hole plated printed circuit board and process for manufacturing same
US4976990A (en) 1986-09-30 1990-12-11 Macdermid, Incorporated Process for metallizing non-conductive substrates
EP0457180A2 (de) 1990-05-09 1991-11-21 LeaRonal (UK) plc Metallisierungsverfahren von einer Leiterplatte mit Durchgangbohrungen
EP0616053A1 (de) 1993-03-18 1994-09-21 Atotech Usa, Inc. Sich selbstbeschleunigendes und sich selbst auffrischendes Verfahren zur Tauchbeschichtigung ohne Formaldehyd, sowie die entsprechende Zusammensetzung
US5447824A (en) 1993-03-09 1995-09-05 U.S. Philips Corporation Method of manufacturing a pattern of an electrically conductive polymer on a substrate surface and method of metallizing such a pattern
WO1996029452A1 (de) 1995-03-17 1996-09-26 Atotech Deutschland Gmbh Verfahren zum selektiven oder partiellen elektrolytischen metallisieren von oberflächen von substraten aus nichtleitenden materialien
US5693209A (en) 1989-09-14 1997-12-02 Atotech Deutschland Gmbh Process for metallization of a nonconductor surface
US6212769B1 (en) 1999-06-29 2001-04-10 International Business Machines Corporation Process for manufacturing a printed wiring board
US6278185B1 (en) 1998-05-27 2001-08-21 Intel Corporation Semi-additive process (SAP) architecture for organic leadless grid array packages
US20040112755A1 (en) 2001-05-18 2004-06-17 Regina Czeczka Direct electrolytic metallization on non-conducting substrates

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002595A (en) * 1973-12-27 1977-01-11 E. I. Du Pont De Nemours And Company Electroplatable polypropylene compositions
US3943082A (en) * 1974-12-04 1976-03-09 Union Carbide Corporation Thermosetting powder coatings
DE3602473A1 (de) * 1986-01-28 1987-07-30 Basf Ag Vinylphenolderivate, ihre herstellung und verwendung
JPH06271373A (ja) * 1993-03-18 1994-09-27 Tonen Corp 湿潤コンクリート面のライニング用プライマー、そのライニング方法及び補強方法
JP3286744B2 (ja) * 1993-05-24 2002-05-27 奥野製薬工業株式会社 非導電性材料表面に電気めっき層を直接形成する方法
JPH07111385A (ja) * 1993-10-12 1995-04-25 Hitachi Chem Co Ltd 導電性ポリマーを用いるスルーホールのめっき前処理液
JP3400049B2 (ja) * 1993-11-26 2003-04-28 住友ベークライト株式会社 プリント配線板用接着剤及びこの接着剤を用いたプリント配線板の製造方法
US5648200A (en) * 1995-03-22 1997-07-15 Macdermid, Incorporated Process for creating circuitry on the surface of a photoimageable dielectric
US6284309B1 (en) * 1997-12-19 2001-09-04 Atotech Deutschland Gmbh Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom
JP3767362B2 (ja) * 1999-12-13 2006-04-19 株式会社村田製作所 積層型セラミック電子部品の製造方法
JP2001342574A (ja) * 2000-06-02 2001-12-14 Hitachi Chem Co Ltd めっき触媒核除去方法及び配線基板の製造方法
DE10054248A1 (de) * 2000-11-02 2002-05-08 Inst Neue Mat Gemein Gmbh Mikrobizid beschichteter Gegenstand, Verfahren zu dessen Herstellung und dessen Verwendung
JP4701667B2 (ja) * 2004-09-30 2011-06-15 味の素株式会社 回路基板用金属付きポリイミドフィルム及びその製造方法
US20070009448A1 (en) * 2005-02-25 2007-01-11 Kanca John A Iii Silanol based dental treatment
JP5072094B2 (ja) * 2005-03-10 2012-11-14 Ｊｘ日鉱日石金属株式会社 樹脂用フィラー、それを配合した樹脂基材、及び電子部品基材
JP4532349B2 (ja) * 2005-06-07 2010-08-25 株式会社リコー 画像処理方法および画像処理装置および画像処理プログラムおよび記録媒体
TW200813255A (en) * 2006-07-07 2008-03-16 Rohm & Haas Elect Mat Environmentally friendly electroless copper compositions
JP2008120911A (ja) * 2006-11-10 2008-05-29 Tokyo Ohka Kogyo Co Ltd 被膜形成用組成物およびそれから形成される被膜
US8029964B1 (en) * 2007-07-20 2011-10-04 Hewlett-Packard Development Company, L.P. Polymer-based pattern mask system and method having enhanced adhesion
WO2010150310A1 (ja) * 2009-06-24 2010-12-29 富士通株式会社 配線基板の製造方法
EP2645830B1 (de) * 2012-03-29 2014-10-08 Atotech Deutschland GmbH Herstellungsverfahren für Schaltungen mit feinen Linien

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988002412A1 (en) * 1986-09-30 1988-04-07 Macdermid, Incorporated Process for metallizing non-conductive substrates
US4976990A (en) 1986-09-30 1990-12-11 Macdermid, Incorporated Process for metallizing non-conductive substrates
EP0322233A2 (de) * 1987-12-21 1989-06-28 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung von feinsten Metallfilmen und feinsten Metallbildern
WO1989008375A1 (en) 1988-03-03 1989-09-08 Blasberg-Oberflächentechnik Gmbh New through-hole plated printed circuit board and process for manufacturing same
US5693209A (en) 1989-09-14 1997-12-02 Atotech Deutschland Gmbh Process for metallization of a nonconductor surface
EP0457180A2 (de) 1990-05-09 1991-11-21 LeaRonal (UK) plc Metallisierungsverfahren von einer Leiterplatte mit Durchgangbohrungen
US5447824A (en) 1993-03-09 1995-09-05 U.S. Philips Corporation Method of manufacturing a pattern of an electrically conductive polymer on a substrate surface and method of metallizing such a pattern
EP0616053A1 (de) 1993-03-18 1994-09-21 Atotech Usa, Inc. Sich selbstbeschleunigendes und sich selbst auffrischendes Verfahren zur Tauchbeschichtigung ohne Formaldehyd, sowie die entsprechende Zusammensetzung
EP1054081B1 (de) 1993-03-18 2006-02-01 ATOTECH Deutschland GmbH Sich selbstbeschleunigendes und sich selbst auffrischendes Verfahren zur Tauchbeschichtung ohne Formaldehyd, sowie die entsprechende Zusammensetzung
WO1996029452A1 (de) 1995-03-17 1996-09-26 Atotech Deutschland Gmbh Verfahren zum selektiven oder partiellen elektrolytischen metallisieren von oberflächen von substraten aus nichtleitenden materialien
US6278185B1 (en) 1998-05-27 2001-08-21 Intel Corporation Semi-additive process (SAP) architecture for organic leadless grid array packages
US6212769B1 (en) 1999-06-29 2001-04-10 International Business Machines Corporation Process for manufacturing a printed wiring board
US20040112755A1 (en) 2001-05-18 2004-06-17 Regina Czeczka Direct electrolytic metallization on non-conducting substrates

Also Published As

Publication number Publication date
EP2823084B1 (de) 2015-08-19
EP2823084A1 (de) 2015-01-14
JP2015516509A (ja) 2015-06-11
US20150050422A1 (en) 2015-02-19
KR20140143764A (ko) 2014-12-17
KR101927679B1 (ko) 2018-12-11
TW201352102A (zh) 2013-12-16
TWI569704B (zh) 2017-02-01
JP6234429B2 (ja) 2017-11-22
WO2013143961A1 (en) 2013-10-03

Similar Documents

Publication Publication Date Title
EP2823084B1 (de) Verfahren zur förderung der haftung zwischen dielektrischen substraten und metallschichten
US10377947B2 (en) Composition and process for metallizing nonconductive plastic surfaces
KR102531793B1 (ko) 기판 표면들의 금속화를 위한 신규한 접착 촉진 프로세스
EP2602357A1 (de) Neuartiges Haftmittel zur Metallisierung von Substratoberflächen
KR101872066B1 (ko) 비전도성 플라스틱 표면의 금속화 방법
JP6195857B2 (ja) 非導電性プラスチック表面の金属化方法
US9713266B2 (en) Method for manufacture of fine line circuitry
JP6150822B2 (ja) 非導電性プラスチック表面の金属化方法
TW201823511A (zh) 印刷配線基板之製造方法
EP1236760B1 (de) Quelllösung zur Texturierung und Säuberung von Polymeroberflächen
WO2016102066A1 (en) Method for electromagnetic shielding and thermal management of active components
EP3257967B1 (de) Vorbehandlungsmittel zur stromlosen plattierung sowie vorbehandlungsverfahren und herstellungsverfahren für eine leiterplatte mit dem vorbehandlungsmittel zur stromlosen plattierung
JP2001214278A (ja) ダイレクトプレーティング用アクセレレータ浴液およびダイレクトプレーティング方法
CN104204294B (zh) 促进介电衬底与金属层之间粘着度的方法
CN1659312A (zh) 用于银沉积的酸性溶液及在金属表面上沉积银层的方法
GB2253415A (en) Selective process for printed circuit board manufacturing employing noble metal oxide catalyst.
EP4450677A1 (de) Verfahren zur herstellung einer plattierungsablagerung
JPH05195286A (ja) プラスチック体を金属化する方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

17P Request for examination filed

Effective date: 20140402

RBV Designated contracting states (corrected)

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

18W Application withdrawn

Effective date: 20140424