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EP2483894B1 - Mittel- oder hochspannungsstromkabel - Google Patents

Mittel- oder hochspannungsstromkabel Download PDF

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Publication number
EP2483894B1
EP2483894B1 EP10773659.7A EP10773659A EP2483894B1 EP 2483894 B1 EP2483894 B1 EP 2483894B1 EP 10773659 A EP10773659 A EP 10773659A EP 2483894 B1 EP2483894 B1 EP 2483894B1
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EP
European Patent Office
Prior art keywords
composition
weight
semiconducting
electrically insulating
layer
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EP10773659.7A
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English (en)
French (fr)
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EP2483894A1 (de
Inventor
Christian Koelblin
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Nexans SA
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Nexans SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00—Insulated conductors or cables characterised by their form
    • H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
    • H01B7/28—Protection against damage caused by moisture, corrosion, chemical attack or weather
    • H01B7/2813—Protection against damage caused by electrical, chemical or water tree deterioration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/002—Inhomogeneous material in general
    • H01B3/004—Inhomogeneous material in general with conductive additives or conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H01B3/441—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from alkenes

Definitions

  • the present invention relates to an electric cable having improved resistance to wet aging under electrical voltage.
  • Medium and high voltage power cables can be in contact with the surrounding humidity during their service life.
  • the presence of moisture combined with the presence of an electric field and a polymer material promote the progressive degradation of the insulating properties of the cable.
  • the document EP-1,148,518 discloses a medium voltage power cable having a first semiconductor layer covered by an electrically insulating layer, and a second semiconductor layer covering the electrically insulating layer, thereby forming a three-layer insulation.
  • the electrically insulating, extruded and crosslinked layer is obtained from an electrically insulating composition comprising a low density ethylene homopolymer (80 parts by weight) and a polar ethylene copolymer (20 parts by weight) as a compound. delaying the water trees (or WTR compound for Anglicism " Water Tree Retardant ").
  • This polar ethylene copolymer is of the copolymer type of ethylene and vinyl acetate (EVA), copolymer of ethylene and butyl acrylate (EBA), copolymer of ethylene and ethyl acrylate (EEA), or copolymer ethylene and methyl acrylate (EMA).
  • EVA ethylene and vinyl acetate
  • EBA copolymer of ethylene and butyl acrylate
  • ESA copolymer of ethylene and ethyl acrylate
  • EMA copolymer ethylene and methyl acrylate
  • the object of the present invention is to overcome the drawbacks of the techniques of the prior art by proposing a new composition intended to be used as a semiconductor layer for electric cable, having resistance to aging, in a humid environment in the presence of an electric field, significantly improved.
  • the mixture of a polar ethylene copolymer with a semiconductor charge is not really suitable for this type of application (ie semiconductor composition) since there has been a progressive and significant degradation of electrically insulating cable properties related to water trees with this type of mixture.
  • the advantage of using this type of semiconductor charge is that it has a structure enabling it to facilitate its dispersion in the composition of the invention, and thus to guarantee optimum conductivity properties because of its structure more rigid than that of so-called "high structure" semiconductor charges having a specific surface area of more than 500 m 2 / g.
  • the shrinkage properties of the crosslinked compositions related to the nature of the semiconductor fillers of the invention are advantageously optimized to contribute to a good dimensional stability of the cable.
  • semiconductor or “semiconductor” used in the present invention should also be understood to mean “conductor” or “conductor”.
  • any copolymer of ethylene does not include polar functions such as acetate groups, acrylates, hydroxyls, nitriles, carboxyls, carbonyls, or any other groups of a polar nature well known in the prior art.
  • the homopolymer of ethylene according to the invention can be chosen among a low density polyethylene (LDPE), a linear low density polyethylene (LLDPE), and a very low density polyethylene (VLDPE), or a mixture thereof.
  • LDPE low density polyethylene
  • LLDPE linear low density polyethylene
  • VLDPE very low density polyethylene
  • LDPE low density polyethylene
  • low density polyethylene can be obtained by a polymerization process in a high pressure tubular reactor, or in an autoclave reactor.
  • low density a density ranging from 0.910 to 0.940 g / cm 3 , and preferably ranging from 0.910 to 0.930 g / cm 3 according to ISO 1183 (at a temperature of 23 ° C).
  • very low density a density of between 0.860 and 0.910 g / cm 3 according to ISO 1183 (at a temperature of 23 ° C).
  • the ethylene homopolymer of the invention preferably has an MFI (Melt Flow Index), determined according to ISO 1133, greater than 5 g / 10 min at 190 ° C. and 2.16 kg, and preferably greater than 7 g / 10 min at 190 ° C. and 2.16 kg, in order to facilitate the use of the composition, in particular to facilitate its extrusion, and to be able to incorporate therein a large amount of semiconducting filler, that is to say say, an amount that may be greater than 25% by weight of semiconductor filler in the composition.
  • MFI Melt Flow Index
  • the nonpolar ethylene copolymer according to the invention may comprise a comonomer of alpha-olefin type, in particular of C 3 -C 12 .
  • the alpha-olefin comonomer may be selected from propylene, 4-methyl-1-pentene, 1-butene, 1-hexene, 1-octene. It will be preferred to use 1-octene as alpha-olefin to form the ethylene-octene (PEO) copolymer.
  • the nonpolar ethylene copolymer may comprise a diene comonomer.
  • the diene comonomer may be chosen from ethylidene norbornene, dicylopentadiene, vinyl norbornene and hexadiene 1-4.
  • This type of ethylene copolymer can be in particular an ethylene-propylene terpolymer, for example the copolymer of ethylene, propylene and diene (EPDM).
  • the nonpolar ethylene copolymer is obtained from the copolymerization of ethylene with said alpha-olefin, in the presence of a Ziegler-Natta catalyst, a metal oxide catalyst or a catalyst. single site.
  • a copolymer obtained by this type of copolymerization is commonly called a metallocene copolymer.
  • the "metallocene” nonpolar ethylene copolymers have more regular molecular structures (ie having a “narrow” molecular weight distribution, also called “low polydispersity” polymer) which gives them excellent mechanical properties, especially excellent elongation at break, even in the presence of loads at high rates.
  • the metallocene nonpolar ethylene copolymers are more resistant to thermal degradation (ie heat stress) and aging by cracking (known under the Angl convinced ESCR for Environmental Stress Cracking Resistance ) than nonpolar ethylene copolymers with substantially identical rate of crystallinity obtained by a different copolymerization process.
  • the semiconductor composition comprises at least 50 parts by weight of homopolymer of ethylene per 100 parts of polymer (s) (ie polymer matrix) in said composition, preferably at least 70 parts by weight of ethylene homopolymer per 100 parts of polymer (s) in said composition, and particularly preferably at least 75 parts by weight of ethylene homopolymer per 100 parts of polymer (s) in said composition.
  • the semiconductor composition does not comprise more than 85 parts by weight of homopolymer of ethylene per 100 parts of polymer (s) in said composition.
  • the semiconductor composition comprises at least 15 parts by weight of nonpolar ethylene copolymer per 100 parts by weight of polymer (s) (ie polymer matrix) in said composition, and preferably minus 25 parts by weight of non-polar ethylene copolymer per 100 parts by weight of polymer (s) in said composition.
  • the lower limit of 15 parts by weight advantageously preserves the mechanical properties of the semiconductor layer: below 15 parts by weight of non-polar ethylene copolymer, the elongation at break of the semiconductor layer may drop, and thus become insufficient for application in medium and high voltage power cables.
  • the semiconductor composition does not comprise more than 30 parts by weight of non-polar ethylene copolymer per 100 parts by weight of polymer (s) in said composition in order to facilitate the implementation of the composition.
  • the ratio of the weight percentage of ethylene homopolymer to the weight percent of ethylene copolymer in the semiconductor composition is preferably greater than 1 in order to obtain a majority phase of ethylene homopolymer and a minority phase of non-polar ethylene copolymer.
  • the polymers that make up the semiconductor composition of the invention are only one or more homopolymers of ethylene and one or more nonpolar ethylene copolymers.
  • this composition may comprise from 4 to 40% by weight of semiconductor filler, preferably at least 15% by weight of semiconductor filler, and still more preferably at least 25% by weight of semiconductor filler.
  • the semiconductor charge may advantageously be chosen from carbon blacks, and graphites, or a mixture thereof.
  • carbon blacks having a high degree of purity can be used.
  • a high degree of purity can be expressed by a sulfur content of less than 1%, preferably less than 0.5% by weight, and particularly preferably less than 0.25% by weight, in the carbon black considered. this degree of purity being conventionally determined by the measurement method according to ASTM D-1619.
  • ash content of less than 2% by weight, preferably less than 1% by weight, and particularly preferably less than 0.5% by weight, in the carbon black under consideration. of ash being conventionally determined by the measurement method according to ASTM D-1506.
  • the semiconductor composition according to the invention may further comprise at least one protective agent such as an antioxidant.
  • a protective agent such as an antioxidant.
  • Antioxidants help to protect the composition of the heat stress generated during cable manufacturing or cable operation.
  • the type of stabilizer and its level in the semiconductor composition are conventionally chosen as a function of the maximum temperature experienced by the polymers during the production of the mixture and during the implementation by extrusion on the cable as well as according to the maximum duration of exposure to this temperature.
  • the semiconductor composition may typically comprise from 0.3% to 2% by weight of antioxidant (s). Preferably, it may comprise at most 0.7% by weight of antioxidant (s), especially when the antioxidant is TMQ.
  • additives may also be added to the semiconductor composition of the invention such as scorch retarders, crosslinking co-agents, processing agents such as lubricants or waxes, compatibilizers , coupling agents, UV stabilizers and non-conductive fillers.
  • the electrically insulating layer of the invention may be obtained from an electrically insulating composition comprising at least 50 parts by weight of homopolymer of ethylene per 100 parts by weight of polymer (s) (ie polymer matrix) in said composition preferably at least 75 parts by weight of homopolymer of ethylene per 100 parts by weight of polymer (s) in said composition.
  • the ethylene homopolymer may be selected from low density polyethylene (LDPE), linear low density polyethylene (LLDPE), and very low density polyethylene (VLDPE), or a mixture thereof.
  • LDPE low density polyethylene
  • LLDPE linear low density polyethylene
  • VLDPE very low density polyethylene
  • the electrically insulating composition may further comprise a compound limiting the water trees.
  • the latter may be a polar ethylene copolymer and, as such, may therefore be part of the polymer matrix.
  • the electrically insulating layer of the electric cable is obtained from an electrically insulating composition that does not comprise a compound limiting the water trees.
  • the electrically insulating composition comprises a homopolymer of ethylene as the sole polymer in said composition.
  • the polymer matrix that composes the electrically insulating composition does not therefore comprise a polar ethylene copolymer which is a compound limiting the water trees.
  • the electrically insulating composition comprises 100 parts by weight of ethylene polymer per 100 parts by weight of polymer (s) in the electrically insulating composition.
  • this electrically insulating composition does not require additional mixing steps between at least two polymers, as required by the electrically insulating composition of the mixture between the low density ethylene homopolymer and the copolymer.
  • polar ethylene of the document EP-1,148,518 is required by the preparation of this electrically insulating composition.
  • the electrically insulating layer of the cable of the invention may further comprise at least one protective agent such as those mentioned for the semiconductor layer (s). In addition, it may comprise other additives such as those mentioned for the semiconductor layer (s).
  • At least one of these layers is an extruded layer, preferably two of these three layers are extruded layers, and even more preferentially these three layers are extruded layers.
  • At least one of these three layers is a crosslinked layer, preferably two of these three layers are crosslinked layers, and even more preferably these three layers are crosslinked layers.
  • the semiconductor composition of the invention as well as the electrically insulating composition, can be crosslinked.
  • crosslinking of at least one of these compositions can be carried out by conventional crosslinking techniques well known to those skilled in the art, such as, for example, peroxide crosslinking and / or or hydrosilylation under the action of heat; silane crosslinking in the presence of a crosslinking agent; crosslinking by electron beams, gamma rays, X-rays, or microwaves; photochemically crosslinking such as irradiation under beta radiation, or irradiation under ultraviolet radiation in the presence of a photoinitiator.
  • crosslinking techniques well known to those skilled in the art, such as, for example, peroxide crosslinking and / or or hydrosilylation under the action of heat; silane crosslinking in the presence of a crosslinking agent; crosslinking by electron beams, gamma rays, X-rays, or microwaves; photochemically crosslinking such as irradiation under beta radiation, or irradiation under ultraviolet radiation in the presence of a photo
  • Peroxide crosslinking under the action of heat is preferred in the context of the invention.
  • the composition taken into consideration further comprises a crosslinking agent such as an organic peroxide.
  • organic peroxides well known to those skilled in the art can be used such as, for example, dicumyl peroxide, t- butylcumylperoxide, 2,5-dimethyl-2,5-di- ( t- butylperoxy) hexane, the di-t-butylperoxide, di- (2-t-butyl-peroxyisopropyl) -benzene.
  • the first semiconductor layer, the electrically insulating layer and the second semiconductor layer is a three-layer insulation.
  • the electrically insulating layer is in direct physical contact with the first semiconductor layer
  • the second semiconductor layer is in direct physical contact with the electrically insulating layer.
  • the electrical cable of the invention may further comprise a metal screen surrounding the second semiconductor layer.
  • This metal screen may be a "wired” screen, consisting of a set of copper or aluminum conductors arranged around and along the second semiconductor layer, a so-called “ribbon” screen composed of one or more ribbons conductive metal laid helically around the second semiconductor layer, or a so-called “sealed” screen of metal tube type surrounding the second semiconductor layer.
  • This last type of screen makes it possible in particular to provide a moisture barrier that tends to penetrate the electrical cable radially.
  • All types of metal screens can act as grounding of the electric cable and can carry fault currents, for example in the event of a short circuit in the network concerned.
  • the electrical cable of the invention may comprise an outer protective sheath surrounding the second semiconductor layer, or more particularly surrounding said metal screen when it exists.
  • This outer protective sheath can be made conventionally from suitable thermoplastic materials such as HDPE, MDPE or LLDPE; or else materials retarding the propagation of the flame or resistant to the propagation of the flame. In particular, if the latter materials do not contain halogen, it is called cladding type HFFR (for the Angl convinced " Halogen Free Flame Retardant ").
  • the electrical conductor of the cable of the invention may also comprise swelling materials in the presence of moisture to obtain a "sealed core".
  • steps i to iii may be performed concomitantly, step iv being carried out after coextrusion and co-deposition of the first semiconductor layer, the electrically insulating layer and the second semiconductor layer. conductive.
  • step iv may be performed after each of steps i, ii and iii.
  • Medium or high voltage power cable 1 shown in FIG. figure 1 , comprises a central conducting element 2, in particular made of copper or aluminum, and successively and coaxially comprises around this element, a first semiconductor layer 3 called an "internal semiconductor layer”, an electrically insulating layer 4, a second semiconductor layer 5 called “external semiconductor layer”, a metal screen 6 of the cylindrical tube type, and an outer protective sheath 7, the semiconductor layers 3 and 5 being obtained from a composition according to invention.
  • Layers 3, 4 and 5 are extruded and crosslinked layers by methods well known to those skilled in the art.
  • the presence of the metal screen 6 and the outer protective sheath 7 is preferred, but not essential.
  • This cable structure is as such of known type and outside the scope of the present invention.
  • the “semiconductor layer 1" of Table 1 corresponds to the inner semiconductor layer (referenced 3 on the figure 1 ) while the “Semiconductor layer 2" of Table 1 corresponds to the external semiconductor layer (referenced 5 on the figure 1 ).
  • Table 2 below details the compositions used to obtain the semiconductor layers referenced in Table 1. These compositions are all crosslinkable and comprise an organic peroxide for this purpose. They further include a semiconductor charge and an antioxidant.
  • ⁇ b> ⁇ u> Table 2 ⁇ / u> ⁇ /b> THE Semiconductor composition based on a polar ethylene copolymer of EBA type and having a carbon black content of approximately 38% by weight, marketed by Borealis under the reference LE0592 R1 Semiconductor composition comprising 67.4% by weight of Clearflex MPDO, 32% by weight of Vulcan XC-500 and 0.6% by weight of antioxidant (TMQ) HF_sc Semiconductor composition based on a polar ethylene copolymer of the EEA type and having a carbon black content of approximately 32% by weight, marketed by DOW under the reference HFDK-0586-BK EB1 A semiconductor composition comprising 69.4% by weight of a mixture of 75 parts by weight of Riblene MP20 and
  • EB2 Semiconductor composition comprising 69.4% by weight of a mixture of 75 parts by weight of LDPE 1808AN00 and 25 parts by weight of Engage 8450, 30% by weight of Vulcan XC-500, and 0.6% by weight of TMQ2.
  • EB3 A semiconductor composition comprising 69.4% by weight of a mixture of 75 parts by weight of Riblene MP20 and 25 parts by weight of Exact 8203, 30% by weight of Vulcan XC-500, and 0.6% by weight of TMQ2.
  • EB4 Semiconductor composition comprising 69.4% by weight of a mixture of 50 parts by weight of Clearflex MPDO and 50 parts by weight of Riblene MP 20, 30% by weight of Vulcan XC-500, and 0.6% by weight TMQ2 weight.
  • EB5 Semiconductor composition comprising 69.4% by weight of a mixture of 75 parts by weight of Riblene MP20 and 25 parts by weight of Exact 8203, 30% by weight of Conductex 7055 Ultra, and 0.6% by weight of TMQ1 .
  • EB6 A semiconductor composition comprising 69.4% by weight of a mixture of 75 parts by weight of Novex 19N430 and 25 parts by weight of Exact 8203, 30% by weight of Vulcan XC-500, and 0.6% by weight of TMQ3.
  • EB7 A semiconductor composition comprising 69.4% by weight of a mixture of 75 parts by weight of LDPE 2008TN00 and 25 parts by weight of Exact 8203, 30% by weight of Vulcan XC-500, and 0.6% by weight of TMQ1.
  • EB8 Semiconductor composition comprising 61.4% by weight of a mixture of 70 parts by weight of LDPE 2015T and 30 parts by weight of Exact 8203, 38% by weight of Purex HS 45, and 0.6% by weight of TMQ1 .
  • Table 3 details the compositions used to obtain the electrically insulating layers referenced in Table 1. These compositions are all crosslinkable and comprise an organic peroxide for this purpose. They further include an antioxidant. ⁇ b> ⁇ u> Table 3 ⁇ / u> ⁇ /b> LH An electrically insulating composition based on the mixture of a homopolymer of ethylene and a polar ethylene copolymer, marketed by Borealis under the reference LH4201 / R. HF_ei3 An electrically insulating composition comprising a polymer matrix based solely on a homopolymer of ethylene, marketed by Dow under the reference HFDK 4201 EC.
  • compositions R1, and EB1 to EB8 referenced in Table 2, for each layer to be considered are metered and mixed respectively in a continuous mixer of the BUSS co-kneader type, twin-screw extruder or another type mixer suitable for charged thermoplastic mixtures.
  • the mixture is then extruded in the form of rods, then cooled and dried to form granules.
  • These granules are then impregnated with a liquid organic peroxide whose rate is adjusted according to the amount of polymer matrix to be crosslinked.
  • compositions LE, HF_sc, LH and HF_ei3 referenced in Tables 2 and 3 are ready-to-use compositions.
  • these compositions are directly introduced into a single-screw extruder in order to extrude and deposit each of said compositions around the copper electrical conductor, according to the type of layers and their positioning mentioned in FIG. table 1.
  • the various compositions are extruded one after the other to successively surround the copper electrical conductor, and thus form the various three-layer isolations as mentioned in Table 1.
  • each trilayer insulation is crosslinked under the action of heat at a temperature above the decomposition temperature of the organic peroxide included in each of the three layers.
  • the electrical cables Cc1 to Cc3 and Ci1 to Ci9 are thus respectively obtained, each comprising three extruded and crosslinked layers.
  • This method consists first of all in conducting AC voltage breakdown tests with a frequency of 50 Hz on "unaged” samples (having been conditioned at 90 ° C for 16 hours in a non-humid environment) with electrical cables.
  • Cc1 to Cc3 and Ci1 to Ci9 to determine the initial value of the breakdown voltage, and then to perform these breakdown tests on "aged” samples of electrical cables
  • Cc1 to Cc3 and Ci1 to Ci9 energized alternately, in a water tank heated to 70 ° C for 1000 hours (according to the conditions referenced "Ageing 2" in said document) and in the presence of water heated to 85 ° C between the conductor and the "Semiconductor layer 1" to determine their breakdown voltage after 1000h.
  • the breakdown voltage (in kV / mm) of the electrical cable corresponds to the voltage necessary to form an electric arc within the cable. It is typically reduced to the maximum electric field at the interface between the first semiconductor layer (or inner semiconductor layer) and the electrically insulating layer of the electrical cable.
  • the trilayers of these two cables both comprise an electrically insulating layer of the same nature as the trilayers of the cables Ci1 to Ci6 and Ci8 and Ci9, while their semiconductor layers are respectively composed of a non-polar matrix (for the Cc2 cable) and a polar matrix (for the Cc3 cable).
  • the combination of semiconductor layers according to the invention with an electrically insulating layer free of limiting compound water trees has a very good resistance to aging and resistance to water trees improved, while remaining very economical .
  • the three-layer of the Ci7 cable exhibits water tree resistance properties after 1000h (81 kV / mm) significantly greater than those of the Cc1 (55 kV / mm), Cc2 (41 kV / mm) cables. ) and Cc3 (40 kV / mm), and more particularly to those of the cable Cc1 which comprises, as the tricouche of the cable Ci7, an electrically insulating layer based on a homopolymer of ethylene combined with a polar ethylene copolymer. This difference in results is due to the nature of the semiconductor layer of the trilayer.
  • the preparation of the electrically insulating layer of the tricouche of the cable Ci7 includes various mixing steps (between the polymers that make up this layer), the combination of this layer with a semiconductor layer according to the invention induces a synergistic effect of more significant since the breakdown voltage is the highest in Table 4, and reaches 80 KV / mm after an aging of 1000h.
  • the retraction test measures the ability of a plastic to retain a shape given to it by different forming techniques such as extrusion, molding and the like.
  • shrink tests must be carried out, because it must be ensured that the materials constituting the cable retain a good dimensional stability during the life of the cable. Without this dimensional stability, especially to be considered in the longitudinal direction of the cable, that is to say in the direction of the conductive core over the entire length of the cable, defects may occur in particular at the connection points (joints and terminations ) and cause a failure of the power cable.
  • These tests are carried out on cable samples, for example according to IEC 60502-2 and IEC 60811-1-3 standards, for the electrically insulating layers of crosslinked polyethylene of medium voltage power cables for rated voltages from 1 to 30 kV.
  • shrink tests are commonly performed on the outer sheaths of cable protection.
  • the molded plates are demolded and separated from the polyester films. Then, the plates are degassed for 5 days at room temperature. During degassing, the plates are maintained under a slight pressure to prevent any deformation of the plates during these 5 days.
  • the molded plates are laid flat in a hot air oven preheated to 130 ° C and held under a slight pressure to prevent deformation. The heat treatment at this temperature is maintained for 60 minutes after temperature stabilization. Then, the molded plates are taken from the oven to cool to room temperature for 24 hours while keeping light pressure on the plates to prevent deformation. The molded plates are then transferred to a measuring room maintained at 20 ° C where they are stored for at least 3 hours. The dimensions "width" and "depth” are measured using a digital caliper. Retraction is calculated by comparing the dimensions (width and depth) of the mold cavity with the width and depth measured from each molded plate. Retraction is expressed as a percentage.
  • Table 5 summarizes the results obtained from the shrinkage test for the semiconductor compositions EB6 and EB8, as well as two other semiconductor compositions R2 and R3 comprising a carbon black having properties that are not in conformity with those claimed in the present invention.
  • the details of the compositions R2 and R3 are mentioned in Table 6 below.
  • R3 Semiconductor composition comprising 86.6% by weight of a mixture of 60 parts by weight of LDPE 2101TN00 and 40 parts by weight of Exact 8203, 13% by weight of Ketjenblack EC300-J, and 0.4% by weight from Irganox 1081.
  • compositions R2 and R3 referenced in Table 6 are dosed and mixed respectively in a continuous mixer of the BUSS co-kneader type, twin-screw extruder or another type of mixer suitable for charged thermoplastic mixtures.
  • the mixture is then extruded in the form of rods, then cooled and dried to form granules.
  • These granules are then impregnated with a liquid organic peroxide whose rate is adjusted according to the amount of polymer matrix to be crosslinked.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
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Claims (18)

  1. Stromkabel (1), das einen elektrischen Leiter (2), eine erste halbleitende Schicht (3), die den elektrischen Leiter (2) umgibt, eine elektrisch isolierende Schicht (4), die aus einer elektrisch isolierenden Zusammensetzung hergestellt ist, die die erste halbleitende Schicht (3) umgibt, und eine zweite halbleitende Schicht (5), die die elektrisch isolierende Schicht (4) umgibt, umfasst, dadurch gekennzeichnet, dass mindestens eine der halbleitenden Schichten (3, 5) aus einer halbleitenden Zusammensetzung hergestellt ist, die ein Ethylen-Homopolymer, ein unpolares Ethylen-Copolymer und eine halbleitende Charge in ausreichender Menge umfasst, um die Zusammensetzung halbleitend zu machen, wobei die halbleitende Charge die folgenden Eigenschaften hat:
    - eine spezielle BET-Oberfläche gemäß Norm ASTM D 6556 strikt unter 500 m2/g, und vorzugsweise strikt unter 350 m2/g, und
    - einen Ölabsorptionswert gemäß Norm ASTM D 2414-90 strikt unter 200 ml/100 g, und vorzugsweise strikt unter 174 ml/100 g.
  2. Kabel nach Anspruch 1, dadurch gekennzeichnet, dass die erste und die zweite halbleitende Schicht (3, 5) aus der halbleitenden Zusammensetzung hergestellt sind.
  3. Kabel nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Ethylen-Homopolymer aus einem Polyethylen niedriger Dichte (LDPE), einem linearen Polyethylen niedriger Dichte (LLDPE) und einem Polyethylen sehr niedriger Dichte (VLDPE) oder einem ihrer Gemische ausgewählt sein kann.
  4. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass das unpolare Ethylen-Copolymer ein Metallocen-Copolymer ist.
  5. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die halbleitende Zusammensetzung mindestens 50 Gewichtsanteile Ethylen-Homopolymer auf 100 Polymeranteile in der Zusammensetzung und vorzugsweise mindestens 70 Gewichtsanteile Ethylen-Homopolymer auf 100 Polymeranteile in der Zusammensetzung umfasst.
  6. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die halbleitende Zusammensetzung mindestens 15 Gewichtsanteile unpolares Ethylen-Copolymer auf 100 Polymer-Gewichtsanteile in der Zusammensetzung und vorzugsweise mindestens 25 Gewichtsanteile unpolares Ethylen-Copolymer auf 100 Polymer-Gewichtsanteile in der Zusammensetzung umfasst.
  7. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass das Verhältnis des Gewichtsprozentsatzes Ethylen-Homopolymer zum Gewichtsprozentsatz unpolares Ethylen-Copolymer in der halbleitenden Zusammensetzung größer als 1 ist.
  8. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die elektrisch isolierende Zusammensetzung mindestens 50 Gewichtsanteile Ethylen-Homopolymer auf 100 Polymer-Gewichtsanteile in der Zusammensetzung umfasst.
  9. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die elektrisch isolierende Zusammensetzung keine Verbindung umfasst, die Wassertreeing begrenzt.
  10. Kabel nach Anspruch 9, dadurch gekennzeichnet, dass die elektrisch isolierende Zusammensetzung ein Ethylen-Homopolymer als einziges Polymer in der Zusammensetzung umfasst.
  11. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die halbleitende Zusammensetzung und/oder die elektrisch isolierende Zusammensetzung ferner ein Antioxydans umfassen.
  12. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass mindestens eine der Schichten, die aus der ersten halbleitenden Schicht (3), der elektrisch isolierenden Schicht (4) und der zweiten halbleitenden Schicht (5) ausgewählt ist, eine extrudierte Schicht ist, vorzugsweise zwei dieser drei Schichten extrudierte Schichten sind und noch vorzugsweiser diese drei Schichten extrudierte Schichten sind.
  13. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass mindestens eine der Schichten, die aus der ersten halbleitenden Schicht (3), der elektrisch isolierenden Schicht (4) und der zweiten halbleitenden Schicht (5) ausgewählt ist, eine vernetzte Schicht ist, vorzugsweise zwei dieser drei Schichten vernetzte Schichten sind und noch vorzugsweiser diese drei Schichten vernetzte Schichten sind.
  14. Kabel nach Anspruch 13, dadurch gekennzeichnet, dass die halbleitende Zusammensetzung und/oder die elektrisch isolierende Zusammensetzung ferner ein Vernetzungsmittel vom Typ organisches Peroxyd umfassen.
  15. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass es ferner einen Metallschirm (6) umfasst, der die zweite halbleitende Schicht umgibt.
  16. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass es ferner eine Schutzhülle (7) umfasst, die die zweite halbleitende Schicht umgibt.
  17. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die erste halbleitende Schicht (3), die elektrisch isolierende Schicht (4) und die zweite halbleitende Schicht (5) eine dreischichtige Isolierung bilden.
  18. Kabel nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die halbleitende Charge aus dem Karbonschwarz und den Graphiten oder einem ihrer Gemische ausgewählt ist.
EP10773659.7A 2009-09-30 2010-09-29 Mittel- oder hochspannungsstromkabel Active EP2483894B1 (de)

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FR0956773A FR2950728B1 (fr) 2009-09-30 2009-09-30 Cable electrique a moyenne ou haute tension
PCT/FR2010/052050 WO2011039474A1 (fr) 2009-09-30 2010-09-29 Câble électrique à moyenne ou haute tension

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EP2483894B1 true EP2483894B1 (de) 2014-01-15

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FR3006493A1 (fr) * 2013-06-04 2014-12-05 Nexans Cable electrique a moyenne ou haute tension
FR3021451B1 (fr) * 2014-05-20 2017-12-15 Nexans Cable electrique comprenant une couche reticulee
CN105405510A (zh) * 2015-12-07 2016-03-16 无锡裕德电缆科技有限公司 轨道交通1500v及以下直流牵引防腐蚀电力电缆
DE102015016088A1 (de) * 2015-12-11 2017-06-14 Schmidt Hochstromtechnik GmbH Hochleistungskoaxialkabel
US10920049B2 (en) 2016-09-09 2021-02-16 Leoni Kabel Gmbh Polymer composition with high flexibility and flame retardancy
EP3510096B1 (de) 2016-09-09 2023-11-01 LEONI Kabel GmbH Strangförmige elemente und polymerzusammensetzung zur herstellung davon
US11248111B2 (en) 2016-09-09 2022-02-15 Leoni Kabel Gmbh Conjunction device such as a cable and polymer composition for preparing same
JP6795481B2 (ja) 2017-11-07 2020-12-02 日立金属株式会社 絶縁電線
JP6756692B2 (ja) * 2017-11-07 2020-09-16 日立金属株式会社 絶縁電線
JP6756693B2 (ja) * 2017-11-07 2020-09-16 日立金属株式会社 絶縁電線
FR3079067B1 (fr) * 2018-03-19 2020-03-20 Nexans Cable electrique comprenant une couche polymerique facilement pelable
JP7465811B2 (ja) 2018-03-28 2024-04-11 ダウ グローバル テクノロジーズ エルエルシー 非極性有機ポリマーおよび超低湿潤性カーボンブラックの複合物
FR3090988B1 (fr) * 2018-12-21 2020-12-18 Nexans Câble électrique résistant aux arborescences d’eau
FR3090985B1 (fr) * 2018-12-21 2020-12-18 Nexans Câble comprenant une couche semi-conductrice facilement pelable

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JP3047377B2 (ja) * 1992-07-24 2000-05-29 矢崎総業株式会社 電力ケーブル用低吸水性半導電層
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DK1148518T3 (da) 2000-04-17 2004-02-23 Nexans Fremgangsmåde til fremstilling af tværbundne polyethylencoatede ledningstråde

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US20120227997A1 (en) 2012-09-13
EP2483894A1 (de) 2012-08-08
FR2950728B1 (fr) 2012-08-17
ES2455545T3 (es) 2014-04-16
WO2011039474A1 (fr) 2011-04-07

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