EP2274770A4 - Mosfet mit integriertem feldeffektgleichrichter - Google Patents

Mosfet mit integriertem feldeffektgleichrichter

Info

Publication number: EP2274770A4
Authority: EP; European Patent Office
Prior art keywords: field effect; integrated field; rectifier mosfet; effect rectifier; mosfet
Prior art date: 2008-04-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP09739614A

Other languages

English (en)

French (fr)

Other versions

EP2274770A1 (de

Inventor

Alexei Ankoudinov

Vladimir Rodov

Richard Cordell

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics NV

Original Assignee

STMicroelectronics NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-04-28

Filing date

2009-04-28

Publication date

2012-12-26

2009-04-28 Application filed by STMicroelectronics NV filed Critical STMicroelectronics NV

2011-01-19 Publication of EP2274770A1 publication Critical patent/EP2274770A1/de

2012-12-26 Publication of EP2274770A4 publication Critical patent/EP2274770A4/de

Status Withdrawn legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
- H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations

EP09739614A 2008-04-28 2009-04-28 Mosfet mit integriertem feldeffektgleichrichter Withdrawn EP2274770A4 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US4833608P	2008-04-28	2008-04-28
PCT/US2009/041996 WO2009134812A1 (en)	2008-04-28	2009-04-28	Mosfet with integrated field effect rectifier

Publications (2)

Publication Number	Publication Date
EP2274770A1 EP2274770A1 (de)	2011-01-19
EP2274770A4 true EP2274770A4 (de)	2012-12-26

Family

ID=41255381

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP09739614A Withdrawn EP2274770A4 (de)	2008-04-28	2009-04-28	Mosfet mit integriertem feldeffektgleichrichter

Country Status (3)

Country	Link
EP (1)	EP2274770A4 (de)
CN (1)	CN102037548B (de)
WO (1)	WO2009134812A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US9018048B2 (en) *	2012-09-27	2015-04-28	Stmicroelectronics S.R.L.	Process for manufactuirng super-barrier rectifiers
FR3012699A1 (fr) *	2013-10-31	2015-05-01	St Microelectronics Tours Sas	Circuit de commande pour diodes en demi-pont

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0807979A2 (de) *	1996-05-15	1997-11-19	SILICONIX Incorporated	Diode
US6281547B1 (en) *	1997-05-08	2001-08-28	Megamos Corporation	Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
US20020177324A1 (en) *	2001-05-23	2002-11-28	Metzler Richard A.	Vertical metal oxide silicon field effect semiconductor diodes
US20080073707A1 (en) *	2006-09-27	2008-03-27	Darwish Mohamed N	Power MOSFET with recessed field plate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3156300B2 (ja) *	1991-10-07	2001-04-16	株式会社デンソー	縦型半導体装置
US5559355A (en) *	1994-03-04	1996-09-24	Fuji Electric Co., Ltd.	Vertical MOS semiconductor device
US5744994A (en) *	1996-05-15	1998-04-28	Siliconix Incorporated	Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
DE19743342C2 (de) *	1997-09-30	2002-02-28	Infineon Technologies Ag	Feldeffekttransistor hoher Packungsdichte und Verfahren zu seiner Herstellung
US6100145A (en) *	1998-11-05	2000-08-08	Advanced Micro Devices, Inc.	Silicidation with silicon buffer layer and silicon spacers
US6593620B1 (en) *	2000-10-06	2003-07-15	General Semiconductor, Inc.	Trench DMOS transistor with embedded trench schottky rectifier
US6621107B2 (en) *	2001-08-23	2003-09-16	General Semiconductor, Inc.	Trench DMOS transistor with embedded trench schottky rectifier
US7719054B2 (en) *	2006-05-31	2010-05-18	Advanced Analogic Technologies, Inc.	High-voltage lateral DMOS device
JP2005079339A (ja) *	2003-08-29	2005-03-24	National Institute Of Advanced Industrial & Technology	半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器
CN100364093C (zh) *	2004-04-06	2008-01-23	世界先进积体电路股份有限公司	具有间隙结构的高压静电放电保护装置
JP4832731B2 (ja) *	2004-07-07	2011-12-07	株式会社東芝	電力用半導体装置
US7135740B2 (en) *	2004-09-27	2006-11-14	Teledyne Licensing, Llc	High voltage FET switch with conductivity modulation

2009
- 2009-04-28 CN CN200980115255.XA patent/CN102037548B/zh not_active Expired - Fee Related
- 2009-04-28 WO PCT/US2009/041996 patent/WO2009134812A1/en active Application Filing
- 2009-04-28 EP EP09739614A patent/EP2274770A4/de not_active Withdrawn

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0807979A2 (de) *	1996-05-15	1997-11-19	SILICONIX Incorporated	Diode
US6281547B1 (en) *	1997-05-08	2001-08-28	Megamos Corporation	Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
US20020177324A1 (en) *	2001-05-23	2002-11-28	Metzler Richard A.	Vertical metal oxide silicon field effect semiconductor diodes
US20080073707A1 (en) *	2006-09-27	2008-03-27	Darwish Mohamed N	Power MOSFET with recessed field plate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2009134812A1 *

Also Published As

Publication number	Publication date
CN102037548A (zh)	2011-04-27
EP2274770A1 (de)	2011-01-19
WO2009134812A1 (en)	2009-11-05
CN102037548B (zh)	2014-04-23

Publication	Publication Date	Title
EP2416365A4 (de)	2014-07-30	Feldeffekttransistor
EP2402348A4 (de)	2012-06-20	Feldeffekttransistor
HK1217138A1 (zh)	2016-12-23	半導體器件
TWI372478B (en)	2012-09-11	Light-emitting device
TWI372466B (en)	2012-09-11	Semiconductor device
EP2003686A4 (de)	2009-08-19	Feldeffekttransistor
HK1195667A1 (zh)	2014-11-14	半導體器件
IT1394247B1 (it)	2012-06-01	Dispositivo di serraggio
HK1148916A1 (en)	2011-09-23	Walking device
EP2262391A4 (de)	2013-05-01	Stollenvorrichtung für einen rutschfesten schuh
GB0800742D0 (en)	2008-02-20	An allnGaN light-emitting device
EP2320458A4 (de)	2013-09-11	Halbleiterbauelement
DE602009000859D1 (de)	2011-04-28	Nockenwellenvorrichtung
DK2271545T3 (da)	2013-06-24	Trådningsindretning
EP2329429A4 (de)	2015-07-29	Halbleiterbauelement
EP2058848A4 (de)	2011-01-12	Feldeffekttransistor mit seitlichem anschluss
PL2324306T3 (pl)	2017-05-31	Urządzenie chłodzące
HK1154641A1 (en)	2012-04-27	Fastening device
EP2317544A4 (de)	2012-02-15	Halbleiterbauelement
EP2325875A4 (de)	2014-08-06	Halbleiterbauelement
PL2313718T3 (pl)	2018-02-28	Urządzenie chłodzące
ES1069364Y (es)	2009-06-15	Dispositivo de garantia
NO20083370L (no)	2010-02-02	Foringsanordning
EP2207218A4 (de)	2011-01-26	Feldeffekttransistor
TWI371873B (en)	2012-09-01	Semiconductor light-emitting device

Legal Events

Date	Code	Title	Description
2010-12-17	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2011-01-19	17P	Request for examination filed	Effective date: 20101022
2011-01-19	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
2011-01-19	AX	Request for extension of the european patent	Extension state: AL BA RS
2011-08-03	DAX	Request for extension of the european patent (deleted)
2012-12-26	A4	Supplementary search report drawn up and despatched	Effective date: 20121126
2012-12-26	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 29/78 20060101AFI20121120BHEP
2013-07-24	RIN1	Information on inventor provided before grant (corrected)	Inventor name: ANKOUDINOV, ALEXEI Inventor name: CORDELL, RICHARD Inventor name: RODOV, VLADIMIR
2014-03-05	17Q	First examination report despatched	Effective date: 20140131
2017-11-27	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: EXAMINATION IS IN PROGRESS
2018-03-02	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2018-04-04	18D	Application deemed to be withdrawn	Effective date: 20171103