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EP2063321A3 - Method of measuring focus of a lithographic projection apparatus - Google Patents

Method of measuring focus of a lithographic projection apparatus Download PDF

Info

Publication number
EP2063321A3
EP2063321A3 EP08169443.2A EP08169443A EP2063321A3 EP 2063321 A3 EP2063321 A3 EP 2063321A3 EP 08169443 A EP08169443 A EP 08169443A EP 2063321 A3 EP2063321 A3 EP 2063321A3
Authority
EP
European Patent Office
Prior art keywords
verification
focus
projection apparatus
lithographic projection
fields
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08169443.2A
Other languages
German (de)
French (fr)
Other versions
EP2063321A2 (en
Inventor
Gerardus Carolus Johannus Hofmans
Hubertus Antonius Geraets
Mark Zellenrath
Sven Gunnar Krister Magnusson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of EP2063321A2 publication Critical patent/EP2063321A2/en
Publication of EP2063321A3 publication Critical patent/EP2063321A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A method of measuring focus of a lithographie projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset FO. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve. The method according to the invention results in a focus-versus alignment shift sensitivity some 50 times higher (typically dX,Y/dZ = 20) than the present LVT.
EP08169443.2A 2007-11-20 2008-11-19 Method of measuring focus of a lithographic projection apparatus Withdrawn EP2063321A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US99650607P 2007-11-20 2007-11-20

Publications (2)

Publication Number Publication Date
EP2063321A2 EP2063321A2 (en) 2009-05-27
EP2063321A3 true EP2063321A3 (en) 2017-07-12

Family

ID=40297849

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08169443.2A Withdrawn EP2063321A3 (en) 2007-11-20 2008-11-19 Method of measuring focus of a lithographic projection apparatus

Country Status (7)

Country Link
US (2) US8289516B2 (en)
EP (1) EP2063321A3 (en)
JP (1) JP2009152563A (en)
KR (1) KR100985834B1 (en)
CN (1) CN101446772B (en)
SG (1) SG153023A1 (en)
TW (1) TWI383273B (en)

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Publication number Priority date Publication date Assignee Title
TWI383273B (en) * 2007-11-20 2013-01-21 Asml Netherlands Bv Method of measuring focus of a lithographic projection apparatus and method of calibrating a lithographic projection apparatus
JP5094517B2 (en) * 2008-04-11 2012-12-12 キヤノン株式会社 Exposure apparatus, measurement method, stabilization method, and device manufacturing method
US9046788B2 (en) * 2008-05-19 2015-06-02 International Business Machines Corporation Method for monitoring focus on an integrated wafer
NL2005719A (en) * 2009-12-18 2011-06-21 Asml Netherlands Bv Method of measuring properties of dynamic positioning errors in a lithographic apparatus, data processing apparatus, and computer program product.
EP2458441B1 (en) 2010-11-30 2022-01-19 ASML Netherlands BV Measuring method, apparatus and substrate
WO2013029957A2 (en) * 2011-08-31 2013-03-07 Asml Netherlands B.V. A method of determining focus corrections, lithographic processing cell and device manufacturing method
KR101865641B1 (en) * 2013-12-17 2018-06-08 에이에스엠엘 네델란즈 비.브이. Inspection method, lithographic apparatus, mask and substrate
CN105334703B (en) * 2014-08-07 2017-05-24 无锡华润上华科技有限公司 Configuration method for exposure units
US10923442B2 (en) * 2017-03-10 2021-02-16 Drexel University Protecting analog circuits with parameter biasing obfuscation
EP3447580A1 (en) 2017-08-21 2019-02-27 ASML Netherlands B.V. Method of calibrating focus measurements, measurement method and metrology apparatus, lithographic system and device manufacturing method
US11314174B2 (en) 2017-09-11 2022-04-26 Asml Netherlands B.V. Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
US10451564B2 (en) * 2017-10-27 2019-10-22 Applied Materials, Inc. Empirical detection of lens aberration for diffraction-limited optical system
CN108827188B (en) * 2018-09-07 2020-04-14 苏州瑞霏光电科技有限公司 Three-dimensional profile microscopic measurement method based on maskless photoetching machine
JP7320986B2 (en) * 2019-05-22 2023-08-04 キヤノン株式会社 Exposure apparatus and article manufacturing method
JP7309639B2 (en) * 2020-03-13 2023-07-18 キオクシア株式会社 Semiconductor device manufacturing system, semiconductor device manufacturing program, and semiconductor device manufacturing method
KR20230003194A (en) 2020-05-29 2023-01-05 에이에스엠엘 네델란즈 비.브이. Substrates, patterning devices and metrology devices

Citations (3)

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EP0721608A1 (en) * 1994-08-02 1996-07-17 Koninklijke Philips Electronics N.V. Method of repetitively imaging a mask pattern on a substrate
EP1256849A1 (en) * 2001-05-08 2002-11-13 ASML Netherlands B.V. Method of calibrating a lithographic apparatus
US20040001192A1 (en) * 2002-06-28 2004-01-01 Lyons Joseph H. System and method for automated focus measuring of a lithography tool

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US4645338A (en) 1985-04-26 1987-02-24 International Business Machines Corporation Optical system for focus correction for a lithographic tool
JPH0478126A (en) * 1990-07-20 1992-03-12 Canon Inc Automatic focus detector
US5789118A (en) * 1992-08-21 1998-08-04 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
JPH1055946A (en) * 1996-08-08 1998-02-24 Nikon Corp Exposure requirement measuring method
TWI256484B (en) * 2000-02-23 2006-07-01 Asml Netherlands Bv Method of measuring aberration in an optical imaging system
TW500987B (en) * 2000-06-14 2002-09-01 Asm Lithography Bv Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby
JP2002050562A (en) 2000-08-03 2002-02-15 Mitsubishi Electric Corp Apparatus for manufacturing semiconductor, method for manufacturing semiconductor device and the semiconductor device
EP1256843A1 (en) * 2001-05-08 2002-11-13 ASML Netherlands B.V. Method of calibrating a lithographic apparatus
TW594431B (en) * 2002-03-01 2004-06-21 Asml Netherlands Bv Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods
JP3550394B2 (en) * 2002-07-16 2004-08-04 沖電気工業株式会社 Defocus measurement method and focus alignment method
CN1678960A (en) * 2002-08-30 2005-10-05 皇家飞利浦电子股份有限公司 Lithographic method for small line printing
JP2004170947A (en) 2002-11-06 2004-06-17 Matsushita Electric Ind Co Ltd Exposure mask, method for measuring focus, administrating method of aligner, and method for manufacturing electronic device
US7289198B2 (en) * 2003-01-07 2007-10-30 Intel Corporation Process compensation for step and scan lithography
JP3854234B2 (en) 2003-02-24 2006-12-06 株式会社東芝 Focus monitor method and mask
EP1457828A3 (en) 2003-03-10 2009-04-22 ASML Netherlands B.V. Focus spot monitoring in a lithographic projection apparatus
JP4749332B2 (en) 2003-05-30 2011-08-17 オムニビジョン テクノロジーズ， インコーポレイテッド Lithographic system and method with increased depth of focus
JP4208686B2 (en) 2003-09-29 2009-01-14 富士通マイクロエレクトロニクス株式会社 Manufacturing method of semiconductor device
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
EP0721608A1 (en) * 1994-08-02 1996-07-17 Koninklijke Philips Electronics N.V. Method of repetitively imaging a mask pattern on a substrate
EP1256849A1 (en) * 2001-05-08 2002-11-13 ASML Netherlands B.V. Method of calibrating a lithographic apparatus
US20040001192A1 (en) * 2002-06-28 2004-01-01 Lyons Joseph H. System and method for automated focus measuring of a lithography tool

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DIRKSEN P ET AL: "FOCUS AND EXPOSURE DOSE DETERMINATION USING STEPPER ALIGNMENT", OPTOMECHATRONIC MICRO/NANO DEVICES AND COMPONENTS III : 8 - 10 OCTOBER 2007, LAUSANNE, SWITZERLAND; [PROCEEDINGS OF SPIE , ISSN 0277-786X], SPIE, BELLINGHAM, WASH, vol. 2726, 1 January 1996 (1996-01-01), pages 799 - 808, XP001016402, ISBN: 978-1-62841-730-2, DOI: 10.1117/12.240941 *

Also Published As

Publication number Publication date
US8436998B2 (en) 2013-05-07
US20130003031A1 (en) 2013-01-03
KR20090052284A (en) 2009-05-25
TW200933314A (en) 2009-08-01
TWI383273B (en) 2013-01-21
US8289516B2 (en) 2012-10-16
CN101446772A (en) 2009-06-03
CN101446772B (en) 2011-02-16
US20090135389A1 (en) 2009-05-28
SG153023A1 (en) 2009-06-29
JP2009152563A (en) 2009-07-09
EP2063321A2 (en) 2009-05-27
KR100985834B1 (en) 2010-10-08

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