EP1891721A1 - Optical irradiation device for the polarization of alkali metal atoms and a device for the hyperpolarization of noble gases - Google Patents
Optical irradiation device for the polarization of alkali metal atoms and a device for the hyperpolarization of noble gasesInfo
- Publication number
- EP1891721A1 EP1891721A1 EP05749551A EP05749551A EP1891721A1 EP 1891721 A1 EP1891721 A1 EP 1891721A1 EP 05749551 A EP05749551 A EP 05749551A EP 05749551 A EP05749551 A EP 05749551A EP 1891721 A1 EP1891721 A1 EP 1891721A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- laser light
- irradiation device
- polarization
- wavelength
- hyperpolarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000010287 polarization Effects 0.000 title claims abstract description 45
- 229910052756 noble gas Inorganic materials 0.000 title claims abstract description 18
- 230000003287 optical effect Effects 0.000 title claims abstract description 17
- 230000002102 hyperpolarization Effects 0.000 title claims abstract description 16
- 150000002835 noble gases Chemical class 0.000 title claims abstract description 14
- 150000001340 alkali metals Chemical group 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000003513 alkali Substances 0.000 claims description 17
- 238000003491 array Methods 0.000 description 8
- 230000009466 transformation Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000002595 magnetic resonance imaging Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
- G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
- G01R33/282—Means specially adapted for hyperpolarisation or for hyperpolarised contrast agents, e.g. for the generation of hyperpolarised gases using optical pumping cells, for storing hyperpolarised contrast agents or for the determination of the polarisation of a hyperpolarised contrast agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
Definitions
- the present invention relates to an optical
- Irradiation apparatus in particular for the polarization of alkali atoms, comprising at least one semiconductor laser device capable of producing laser light suitable for polarization of the alkali atoms with respect to its wavelength, polarizing means for circular polarization of the laser light generated by the at least one semiconductor laser device, and means for introducing the laser light into a working area in which the alkali atoms 1 to be polarized can be arranged.
- the present invention relates to a device for the hyperpolarization of noble gases, comprising an optical irradiation device for the polarization of alkali atoms of the aforementioned type and means for the hyperpolarization of a noble gas by spin exchange with the polarized alkali atoms.
- Hyperpolarized noble gases can be used for MRI (Magnetic Resonance Imaging) measurements.
- the hyperpolarization of the noble gases or noble gas cores can be realized by spin exchange with polarized alkali atoms.
- the polarization of the alkali atoms can be achieved by absorbing circularly polarized light of a suitable wavelength.
- the bandwidth and the circular degree of polarization of the incident light are important parameters for the effectiveness of the hyperpolarization to be achieved.
- the wavelength of the irradiated light should correspond for the most part exactly to the corresponding absorption wavelength for the polarization of the alkali atoms.
- An irradiation device for the polarization of alkali atoms and a device for hyperpolarization of noble gases of the type mentioned are known from European Patent EP 0 896 655 B1.
- One of the embodiments described therein comprises, in addition to a semiconductor laser device and optics for Incorporation of the light in the working area a polarization beam splitter for the generation of linearly polarized light and a quarter wavelength plate for the conversion of the linearly polarized light in circularly polarized light.
- a disadvantage of this prior art is the fact that a complex temperature control must be operated in order to keep the wavelength of the exiting laser light at least approximately constant over a constant temperature of the semiconductor laser device. Furthermore, no larger work area can be homogeneously irradiated with such a device.
- the problem underlying the present invention is the provision of an irradiation device and a device for the hyperpolarization of noble gases of the type mentioned, which are constructed more effectively.
- the irradiation device comprises means for determining the wavelength of the laser light, which can couple back a portion of the laser light in the semiconductor laser device, thereby setting the wavelength of the laser light to a predetermined wavelength or a predetermined wavelength range.
- the means for determining the wavelength of the laser light can be a complex Temperature control omitted because the wavelength is kept constant by optical means. Under certain circumstances, such an optical determination or stabilization of the wavelength can also lead to a more exact compliance with the wavelength and possibly also to a smaller bandwidth of the laser light.
- the means for determining the wavelength of the laser light are designed as a grating, in particular as a Bragg grating or as a Littrow grating.
- the irradiation device comprises homogenizer means which can homogenize the laser light.
- homogenizer means which can homogenize the laser light.
- the homogenizer means are formed in two stages. This further increases the homogeneity of the laser light in the working area.
- the homogenizer means can homogenize the laser light with respect to two mutually perpendicular directions.
- the homogenizer means comprise at least one optically functional interface with a lens array, in particular a cylindrical lens array.
- a lens array in particular a cylindrical lens array.
- the means for introducing the laser light into a working area comprise at least one lens.
- It can be a spherical lens. Alternatively, also mutually crossed cylindrical lenses can be used.
- the irradiation device comprises a telescope unit.
- This telescope unit can contribute to the widening of the laser light.
- an irradiation device according to the invention is used as an optical irradiation device.
- Figure 1 is a side view of an irradiation device according to the invention with parts of a device according to the invention for the hyperpolarization of noble gases.
- Fig. 2 is a rotated by 90 ° side view of
- Irradiation device with parts of the device according to the invention for the hyperpolarization of noble gases
- Fig. 3 is an enlarged side view of some details of
- Irradiation device with non-realistic distances of the individual components to each other;
- Fig. 4 is a Fig. 3 corresponding view, which is rotated by 90 °.
- Cartesian coordinate axes x, y, z are drawn in for better orientation.
- the irradiation device shown in FIGS. 1 and 2 comprises, in succession, a semiconductor laser device 1, a fast axis collimation lens 2, an optical beam transformation device 3, a slow axis collimation lens 4, fixing means 5 the wavelength of the laser light 14, polarization means 6 for linear polarization of the laser light 14, polarization means 7 for circular polarization of the laser light 14, first and second homogenizer means 8, 9, a telescope unit 10, a lens 1 1 designed as a spherical plano-convex lens and a window 12.
- the laser light 14 emerging from the window in the positive z-direction enters into a schematically indicated apparatus 13, which is part of the device for the hyperpolarization of noble gases.
- alkali atoms are provided, which can be polarized by absorption of the laser light 14.
- noble gas cores can be hyperpolarized by spin exchange with the polarized alkali atoms.
- the semiconductor laser device 1 can be embodied, for example, as a laser diode bar, which represents a substantially linear light source. Instead of a line-shaped light source, it is also possible to use a punctiform light source or a light source consisting of groups of point sources or a planar light source with an arbitrary angular distribution.
- the laser diode bar extends substantially in the x direction, in which it has, for example, an extension of 10 mm. In contrast, the extension of the laser diode bar in the y direction is about 1 ⁇ m.
- the light emitted by the laser diode bar has a much greater divergence in the direction of the y-axis, the so-called fast axis, than in the direction of the x-axis, the so-called slow axis.
- the divergence in the y-direction is about 0.5 rad
- the divergence in the x-direction is about 0.1 rad, for example.
- a laser diode bar in the x direction is divided into a plurality of emitting sections, for example, 19 to 25 sections in its longitudinal direction.
- the light emanating from the semiconductor laser device 1 is collimated in a diffraction-limited manner in a fast-axis collimating lens 2, which extends substantially in the x direction, such that the divergence in the y direction is only 0.005 rad, for example, so that the light 9 behind the fast-axis collimating lens 2 is substantially parallel with respect to the y-axis.
- the fast-axis Collimating lens 2 may be formed, for example, as an aspherical, plano-convex cylindrical lens with cylinder axis in the x direction.
- the optical beam transformation device 3 may be a substantially block-shaped block made of a transparent material, on which a plurality of cylindrical lens segments are arranged parallel to one another both on the inlet side and on the outlet side.
- the axes of the cylindrical lens segments enclose an angle of 45 ° with the base side of the cuboidal device 3, which extends in the x-direction.
- the depth of the biconvex cylindrical lenses formed in the z-direction is equal to twice the focal length of each of these biconvex cylindrical lenses.
- Each of the biconvex cylindrical lenses converts a parallel beam of light into a parallel beam of light.
- Partial beams emanating from individual emitting sections of the laser diode bar undergo a rotation through 90 ° when passing through the device 3, so that the individual partial beams are only extended in the y direction after passing through the device 3.
- the divergence in the y-direction corresponds to the original divergence in the x-direction of, for example, about 0.1 rad.
- Such a light beam that is only slightly divergent in the x-direction and moderately divergent in the y-direction can be detected by the For example, as aspherical, plano-convex cylindrical lens with cylinder axis in the x-direction running slow-axis collimating lens 4 are collimated with respect to the now extending in the y-direction slow axis (see also Fig. 3 and Fig. 4).
- fast-axis collimating lens 2 and the slow-axis collimating lens 4 can be dispensed with the device 3 for beam transformation under certain circumstances.
- the means 5 for determining the wavelength of the laser light can be embodied as a grating, in particular as a Bragg grating or as a Littrow grating.
- Laser light 14 of a certain wavelength ⁇ is reflected back from this grating to a, in particular small, part and re-enters the resonator of the semiconductor laser device 1.
- the resonator is caused to substantially laser at the back-reflected wavelength ⁇ , so that the laser light 14 emerging from the semiconductor laser device 1 is substantially light of the wavelength ⁇ .
- the means 5 for determining the wavelength of the laser light instead of the apparent from Fig. 3 and Fig.
- the means 5 for determining the wavelength can also be integrated in the fast-axis collimation lens 2, in the optical beam transformation device 3 or in the slow-axis collimation lens 4.
- a Bragg grating could be formed in the abovementioned components, for example by periodic refractive index variations.
- the polarizing means 6 for the linear polarization of the laser light 14 are in the illustrated embodiment as cube-shaped Polarization beam splitter formed. Alternative polarizers, such as thin film polarizers or Brewster plates, may also be considered. Before entering the polarization means 6 for linear polarization, the laser light of the semiconductor laser device 1 has a linear degree of polarization of more than 90%. After passing through the polarizing means 6 for linear polarization, this degree of polarization is significantly higher.
- the laser light 14 After passing through the polarization means 6 for linear polarization, the laser light 14 strikes the polarization means 7 for circular polarization. In these polarization means 7 for circular polarization, the highly linearly polarized laser light 14 is converted into highly circularly polarized laser light 14.
- a polarizing means 7 for circular polarization of the laser light 14 a quarter-wavelength plate is used in the illustrated embodiment. Other polarizing means may also be used for the circular polarization of the laser light.
- the first and second homogenizing means 8, 9 adjoining the polarizing means 7 in the direction of propagation z of the laser light 14 are each in the form of a transparent substrate with cylindrical lens arrays 15, 16, 17, 18 on the respective inlet side and the respective outlet side.
- Such homogenizer means 8, 9 are well known in the art.
- the focal lengths of the cylindrical lens arrays 15, 16 of the first homogenizer means 8 are less than or equal to the distance between the respective entry surfaces of the homogenizer means 8, 9 to each other, or less than or equal to the distance of the respective exit surfaces of the homogenizer means 8, 9 to each other.
- the cylinder axes of the cylindrical lens arrays 15, 17 on the entry sides of the homogenizer means 8, 9 are aligned in the y-direction in the illustrated embodiment.
- These cylindrical lens arrays 15, 17 homogenize the laser light 14 with respect to the x-direction.
- the cylinder axes of the cylindrical lens arrays 16, 18 on the exit sides of the homogenizer means 8, 9 are aligned in the illustrated embodiment in the x direction.
- These cylindrical lens arrays 16, 18 homogenize the laser light 14 with respect to the y-direction.
- the homogenizer means 8, 9 the laser light 14 is thus homogenized in two successive stages with respect to two mutually perpendicular directions x, y.
- the cylinder axes of the cylindrical lens arrays 15, 16 of the first homogenizer means 8 parallel to one another and, for example, in the x direction.
- the cylinder axes of the cylindrical lens arrays 17, 18 of the second homogenizer means 9 could be aligned parallel to one another and in the y direction.
- homogenizer means can also be positioned differently, for example between the polarization means 6 for linear polarization and the polarization means 7 for circular polarization.
- the telescopic unit 10 consists in the illustrated embodiment of two in the z-direction successively arranged spherical lenses 19, 20, which are arranged at a distance from one another, which corresponds to the sum of their focal lengths.
- the telescope unit 10 serves to widen the laser radiation 14. In the area of the telescope unit 10, this has Laser light 14 large divergence angles and a small focal point.
- the in the propagation z of the laser light 14 behind the telescope unit 10 arranged, designed as a spherical plano-convex lens 1 1 has a distance from the telescope unit 10 or the focal point of the telescope unit 10, which corresponds approximately to the focal length of the lens 1 1.
- the focal length of the lens 1 1 may be for example 200 mm.
- the laser light 14 is substantially collimated in the z-direction behind the lens 11.
- the cross section of the laser light 14 after passing through the lens 1 1 may be an extension of, for example, 30 mm to 40 mm.
- a spherical Plano-convex lens instead of a spherical Plano-convex lens, for example, two mutually crossed cylindrical lenses can be used.
- At least two, in particular a plurality of semiconductor laser devices 1 can for example be coupled to one another before the polarization means 6 for linear polarization by means of mirrors and / or prisms.
- the coupling of the laser light emanating from the at least two semiconductor laser devices 1 into the polarization beam divider 6, which is designed as a polarization beam splitter, also lends itself to linear polarization.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2005/006150 WO2006131133A1 (en) | 2005-06-08 | 2005-06-08 | Optical irradiation device for the polarization of alkali metal atoms and a device for the hyperpolarization of noble gases |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1891721A1 true EP1891721A1 (en) | 2008-02-27 |
Family
ID=35744689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05749551A Withdrawn EP1891721A1 (en) | 2005-06-08 | 2005-06-08 | Optical irradiation device for the polarization of alkali metal atoms and a device for the hyperpolarization of noble gases |
Country Status (4)
Country | Link |
---|---|
US (1) | US7768705B2 (en) |
EP (1) | EP1891721A1 (en) |
JP (1) | JP4964876B2 (en) |
WO (1) | WO2006131133A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008027231B4 (en) * | 2008-06-06 | 2016-03-03 | Limo Patentverwaltung Gmbh & Co. Kg | Apparatus for beam shaping |
DE102008044867A1 (en) * | 2008-08-29 | 2010-03-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | System with one or two-dimensional rows of radiation sources |
CN102629102B (en) * | 2012-03-26 | 2014-06-04 | 中国科学院武汉物理与数学研究所 | Coherent bi-color light source device and method for generating coherent bi-color light |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5642625A (en) | 1996-03-29 | 1997-07-01 | The Trustees Of Princeton University | High volume hyperpolarizer for spin-polarized noble gas |
JP3484481B2 (en) * | 1997-06-19 | 2004-01-06 | 住友重機械工業株式会社 | Beam homogenizer and method of manufacturing semiconductor thin film using the same |
JPH11248809A (en) * | 1998-03-03 | 1999-09-17 | Agency Of Ind Science & Technol | Nuclear magnetic resonance-detecting apparatus having polarized rare gas-producing apparatus and method for measuring nuclear magnetic resonance using the apparatus |
JP3347072B2 (en) * | 1998-09-16 | 2002-11-20 | 株式会社東芝 | Polycrystalline growth method |
US6584133B1 (en) * | 2000-11-03 | 2003-06-24 | Wisconsin Alumni Research Foundation | Frequency-narrowed high power diode laser array method and system |
JP4059623B2 (en) * | 2000-12-15 | 2008-03-12 | 株式会社リコー | Illumination device and uniform illumination device |
US7535935B2 (en) * | 2002-09-27 | 2009-05-19 | Infraredx, Inc. | Spectroscopic catheter system with widely tunable source and method of operation |
JP4002286B2 (en) * | 2003-05-09 | 2007-10-31 | 浜松ホトニクス株式会社 | Semiconductor laser device |
-
2005
- 2005-06-08 US US11/917,097 patent/US7768705B2/en active Active
- 2005-06-08 EP EP05749551A patent/EP1891721A1/en not_active Withdrawn
- 2005-06-08 JP JP2008515051A patent/JP4964876B2/en not_active Expired - Fee Related
- 2005-06-08 WO PCT/EP2005/006150 patent/WO2006131133A1/en active Application Filing
Non-Patent Citations (1)
Title |
---|
See references of WO2006131133A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2006131133A1 (en) | 2006-12-14 |
JP2008543094A (en) | 2008-11-27 |
US20080212634A1 (en) | 2008-09-04 |
US7768705B2 (en) | 2010-08-03 |
JP4964876B2 (en) | 2012-07-04 |
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Legal Events
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Inventor name: MITRA,THOMAS Inventor name: REVERMANN, MARKUS Inventor name: FELICE, FRANK |
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RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
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