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EP1733071A2 - Procedes d'elimination de depots de surface par enceinte a distance - Google Patents

Procedes d'elimination de depots de surface par enceinte a distance

Info

Publication number
EP1733071A2
EP1733071A2 EP05734780A EP05734780A EP1733071A2 EP 1733071 A2 EP1733071 A2 EP 1733071A2 EP 05734780 A EP05734780 A EP 05734780A EP 05734780 A EP05734780 A EP 05734780A EP 1733071 A2 EP1733071 A2 EP 1733071A2
Authority
EP
European Patent Office
Prior art keywords
gas mixture
fluorocarbon
oxygen
activated
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05734780A
Other languages
German (de)
English (en)
Inventor
Herbert Harold Sawin
Bo Bai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of EP1733071A2 publication Critical patent/EP1733071A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Definitions

  • PECVD plasma-on-assisted chemical vapor deposition
  • the use of remote plasma sources avoids some of the erosion of the interior chamber materials that occurs with in situ chamber cleans in which the cleaning is performed by creating a plasma discharge within the PECVD chamber.
  • capacitively and inductively coupled RF as well as microwave remote sources have been developed for these sorts of applications, the industry is rapidly moving toward transformer coupled inductively coupled sources in which the plasma has a torroidal configuration and acts as the secondary of the transformer.
  • the use of lower frequency RF power allows the use of magnetic cores which enhance the inductive coupling with respect to capacitive coupling; thereby allowing the more efficient transfer of energy to the plasma without excessive ion bombardment which limits the lifetime of the remote plasma source chamber interior.
  • a pretreatment gas mixture that is activated to treat the interior surface of the pathway through which an activated cleaning gas passes to the process chamber comprises fluorocarbon and optionally oxygen.
  • a preferred pretreatment gas mixture has oxygen verses fluorocarbon molar ratio of less than 1 :1.
  • a more preferred pretreatment gas mixture contains no oxygen.
  • a cleaning gas mixture that is activated to remove the surface deposition comprises oxygen and fluorocarbon.
  • a preferred cleaning gas mixture has oxygen verses fluorocarbon molar ratio of at least 1:3.
  • a more preferred cleaning gas mixture has oxygen verses fluorocarbon molar ratio of at least from about 2:1 to about 20:1.
  • the fluorocarbon of the invention is herein referred to as a compound comprising of C and F.
  • Preferred fluorocarbon in this invention is perfluorocarbon compound.
  • fluorocarbon rich plasma it is meant that the gas mixture comprising fluorocarbon and optionally oxygen wherein the molar ratio of oxygen and fluorocarbon is less than about 1 :1 is activated to form a plasma.
  • the cleaning gas mixture is composed of
  • the fluorocarbon is Zyron® C318N4 with minimum 99.99 vol % of octafluorocyclobutane, and Zyron® 8020 with minimum 99.9 vol % of octafluorocyclobutane, both are manufactured by DuPont and supplied in cylinders.
  • Nitrogen source in the examples is nitrogen gas manufactured by Airgas with grade of 4.8 and Argon is manufactured by Airgas with grade of 5.0.
  • the activated gas then passed through an aluminum water-cooled heat exchanger to reduce the thermal loading of the aluminum process chamber.
  • the surface deposits covered wafer was placed on a temperature controlled mounting in the process chamber.
  • the neutral temperature is measured by Optical Emission Spectroscopy (OES), in which rovibrational transition bands of diatomic species like C 2 and N 2 are theoretically fitted to yield neutral temperature. See also B. Bai and H. Sawin, Journal of Vacuum Science & Technology A 22 (5), 2014 (2004), herein incorporated as a reference.
  • the etching rate of the surface deposits by the activated gas is measured by interferometry equipment in the process chamber.
  • N 2 gas is added at the entrance of the pump both to dilute the products to a proper concentration for FTIR measurement and TO re ⁇ uce tne nang-up o ⁇ pro ⁇ ucis in the pump in the case that wet pump is used.
  • FTIR was used to measure the concentration of species in the pump exhaust.
  • Example 1 It was discovered that after certain periods of use, the etching rate of Zyron® C318N4 will drop to approximately one half of the previous rate. At the same time a much larger amount of COF 2 in the effluent gases was observed. It was also found that rapid closing and opening of the oxygen valve for a period of a few seconds could increase the etching rate back to the previous level.
  • the feeding gas composed of O 2 , Zyron® C318N4 (C 4 F ⁇ ) and Ar, wherein O 2 flow rate is 1750 seem, Ar flow rate is 2000 seem, C F ⁇ flow rate is 250 seem. Chamber pressure is 2 torr.
  • etching rate jumped up at the transient closing off of oxygen.
  • the etching rate then slowly decreased and leveled off corresponding to the COF 2 and CO 2 concentration change in the emission gases.
  • the RF power was turned off at 450 seconds.
  • the gas mixture passed through the heat exchanger for two minutes. After the treatment, the etching rate was measured again under the same condition as before the treatment. The etching rate was found to be 1150 Angstrom/min, 30% higher than the one before the treatment.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

La présente invention concerne un procédé de nettoyage par plasma amélioré, un procédé permettant d'éliminer des dépôts de surface se trouvant sur une surface, telle que l'intérieur d'une chambre de dépôt utilisée pour fabriquer des dispositifs électroniques. L'amélioration décrite dans cette invention consiste en un prétraitement au plasma enrichi en fluorocarbone de la surface intérieure de la voie de passage depuis l'enceinte à distance vers les dépôts de surface.
EP05734780A 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance Withdrawn EP1733071A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US64083304P 2004-12-30 2004-12-30
US64044404P 2004-12-30 2004-12-30
PCT/US2005/010691 WO2005095670A2 (fr) 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance

Publications (1)

Publication Number Publication Date
EP1733071A2 true EP1733071A2 (fr) 2006-12-20

Family

ID=34965582

Family Applications (3)

Application Number Title Priority Date Filing Date
EP05760380A Withdrawn EP1733072A2 (fr) 2004-03-24 2005-03-24 Procedes telecommandes destines a eliminer des depots de surface dans des chambres
EP05734780A Withdrawn EP1733071A2 (fr) 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance
EP05760434A Withdrawn EP1737998A2 (fr) 2004-03-24 2005-03-24 Procede a chambre separee pour l'elimination des depots de surface

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP05760380A Withdrawn EP1733072A2 (fr) 2004-03-24 2005-03-24 Procedes telecommandes destines a eliminer des depots de surface dans des chambres

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP05760434A Withdrawn EP1737998A2 (fr) 2004-03-24 2005-03-24 Procede a chambre separee pour l'elimination des depots de surface

Country Status (6)

Country Link
EP (3) EP1733072A2 (fr)
JP (3) JP2007531288A (fr)
KR (3) KR20070037434A (fr)
BR (3) BRPI0508214A (fr)
TW (3) TWI284929B (fr)
WO (3) WO2005098086A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697467A1 (fr) * 1994-07-21 1996-02-21 Applied Materials, Inc. Procédé et dispositif de nettoyage d'une chambre de dépÔt
US7581549B2 (en) 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
KR20080050401A (ko) * 2005-08-02 2008-06-05 매사추세츠 인스티튜트 오브 테크놀로지 Ｃｖｄ/ｐｅｃｖｄ-플라즈마 챔버 내부의 표면 퇴적물을제거하기 위하여 플루오르화황을 이용한 원격 챔버 방법
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
JP6390977B2 (ja) * 2012-12-18 2018-09-19 シースター ケミカルズ インク． 薄膜堆積反応器及び薄膜層をインサイチューで乾式浄化するプロセス及び方法
JP6202423B2 (ja) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法およびプラズマクリーニング装置
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
SG10201906117XA (en) * 2013-12-30 2019-08-27 Chemours Co Fc Llc Chamber cleaning and semiconductor etching gases
CN113261081B (zh) * 2018-12-25 2024-04-12 株式会社力森诺科 附着物除去方法和成膜方法
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
CN116145106B (zh) * 2023-02-21 2024-12-24 苏州鼎芯光电科技有限公司 一种用于半导体镀膜工艺腔室的清洁方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2005095670A2 *

Also Published As

Publication number Publication date
TWI284929B (en) 2007-08-01
KR20070037434A (ko) 2007-04-04
TW200623240A (en) 2006-07-01
WO2005090638A3 (fr) 2006-04-13
WO2005098086A2 (fr) 2005-10-20
WO2005090638A9 (fr) 2006-01-26
JP2007531288A (ja) 2007-11-01
EP1737998A2 (fr) 2007-01-03
TW200623281A (en) 2006-07-01
BRPI0508204A (pt) 2007-07-17
TWI281714B (en) 2007-05-21
KR20070040748A (ko) 2007-04-17
WO2005095670A3 (fr) 2006-05-04
BRPI0508205A (pt) 2007-07-17
WO2005098086A3 (fr) 2006-05-04
EP1733072A2 (fr) 2006-12-20
BRPI0508214A (pt) 2007-07-17
WO2005095670A2 (fr) 2005-10-13
WO2005090638A8 (fr) 2006-11-16
WO2005090638A2 (fr) 2005-09-29
JP2007530792A (ja) 2007-11-01
JP2007531289A (ja) 2007-11-01
TW200623251A (en) 2006-07-01
KR20070043697A (ko) 2007-04-25
TWI281715B (en) 2007-05-21

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