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EP1358684A1 - Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics - Google Patents

Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics

Info

Publication number
EP1358684A1
EP1358684A1 EP02706645A EP02706645A EP1358684A1 EP 1358684 A1 EP1358684 A1 EP 1358684A1 EP 02706645 A EP02706645 A EP 02706645A EP 02706645 A EP02706645 A EP 02706645A EP 1358684 A1 EP1358684 A1 EP 1358684A1
Authority
EP
European Patent Office
Prior art keywords
effect transistor
field effect
organic field
transistor according
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02706645A
Other languages
German (de)
French (fr)
Inventor
Adolf Bernds
Walter Fix
Henning Rost
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PolyIC GmbH and Co KG
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP1358684A1 publication Critical patent/EP1358684A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Definitions

  • Organic field effect transistor with photo-structured gate dielectric a method for its production and its use in organic electronics.
  • the present invention relates to organic field-effect transistors, so-called OFETs, with a photo-structured gate dielectric, and to a method for the production thereof and the use of these field-effect transistors in organic electronics.
  • the organic field effect transistors should be inexpensive and economical to manufacture in simple steps.
  • the present invention accordingly relates to an organic field effect transistor, which is characterized in that on a flexible substrate in a first layer
  • Source and drain electrodes and a semiconductor are arranged, on which an insulator is structured in a second layer and on which a gate electrode is applied in a third layer (top-gate structure).
  • the organic field-effect transistor according to the invention is light and extremely flexible, since it is only made up of organic layers which are mainly structured by means of photolithography, but without the use of photoresist.
  • the gate electrode of the organic field-effect transistor according to the invention can simultaneously be used as a conductor track to the source electrode of the next transistor.
  • wafer-thin glasses can be used as the substrate, but plastic foils are preferred for reasons of cost. Polyethylene terephthalate and polyimide films are particularly preferred.
  • the substrate should be as light and flexible as possible. Because the thickness of the substrate The actual thickness of the entire component is determined, all other layers together are only about 1000 nm thick, the substrate thickness should also be kept as small as possible. It is usually in the range of about 0.05-0.5 mm.
  • the source and drain electrodes can be made of a wide variety of materials. The type of material will be largely determined by the type of preferred manufacture. For example, electrodes made of indium tin oxide (ITO) can be produced by photolithography on substrates coated with ITO. The ITO is etched away on the areas not covered by the photoresist. Electrodes made of polyaniline (PANI) can also be produced either by photostructuring or by photolithography on substrates coated with PANI. Likewise, electrodes made of conductive polymers can be produced by printing the conductive polymer directly onto the substrate. Conductive polymers are, for example, doped polyethylene (PEDOT) or possibly PANI.
  • PEDOT doped polyethylene
  • the semiconductor layer consists, for example, of conjugated polymers, such as polythiophenes, polythienylenevinylenes or polyfluorene derivatives, which can be processed from solution by spin coating, knife coating or printing. So-called “small olecules” are also suitable for the construction of the semiconductor layer, i.e. Oligomers such as sexithiophene or pentacene, which are vacuum-deposited onto the substrate.
  • An essential aspect of the present subject matter of the invention is the way in which the insulator layer is built up. It is a networked isolator that is networked and structured using photolithography, i.e. under partial exposure. An insulator material is crosslinked in places with a crosslinker under acid catalysis.
  • Insulator materials suitable in the context of the present invention are, for example, poly-4-hydroxystyrene or hydro- Melamine-formaldehyde resins containing xyl groups.
  • the crosslinker is sensitive to acids and especially hexamethoxymethyl melamine (HMMM).
  • HMMM hexamethoxymethyl melamine
  • the acid catalysis is effected by means of a photoinitiator, for example diphenyliodonium tetrafluoroborate or triphenylsulfonium hexafluoroantimonate, which form an acid under the influence of light.
  • the present invention also relates to a method for producing an organic field effect transistor, in which a flexible substrate is provided in the usual way with a source and drain electrode and a semiconductor, and is characterized in that an insulator is provided on the semiconductor is applied by applying a solution of an isolator material, which contains an acid-sensitive crosslinker and a photo initiator, through a shadow mask, which covers the source and drain electrodes, and then anneals, causing crosslinking at the exposed areas and the gate electrode is applied to the networked and structured insulator.
  • an isolator material which contains an acid-sensitive crosslinker and a photo initiator
  • FIG. 1 shows the structure of a conventional OFET
  • 2 shows the structure of an OFET according to the invention
  • FIG. 3 chemical reactions on which the production of the cross-linked, structured insulator layer is based.
  • a conventional OFET consists of a substrate 1, source or drain electrodes 2 and 2 ', a semiconductor 3, an isolator 4 and the gate electrode 5.
  • H H H 0 P- ⁇ o ⁇ ⁇ H3 ⁇ 3 P l-i tr ⁇ 0 10 ⁇ P-
  • P- P- ⁇ ⁇ ⁇ ⁇ rt 0 ⁇ P pj a. 10 o P- N P- 0 P 1 s; ⁇ rt H ⁇ P- P- ⁇ ⁇ i rt. -. 3 0 ⁇ cn ⁇ tr ⁇ ⁇ 0 left
  • the gate dielectric is therefore produced by photolithography without the use of photoresist.
  • the result is an OFET whose gate electrode can simultaneously be used as a conductor track to the source electrode of the next transistor. Through-contacting between conductor tracks on different levels in organic integrated circuits is made possible.
  • the OFETs according to the invention are outstandingly suitable for applications in the field of organic electronics and in particular in the production of identification stickers (ident tags), electronic watermarks, electronic bar codes, electronic toys, electronic tickets, for use in product or plagiarism protection or the anti-theft protection.

Landscapes

  • Thin Film Transistor (AREA)

Abstract

The invention relates to an organic field effect transistor which is especially characterized by a cross-linked, structured insulating layer (4) on which the gate electrode (5) is arranged. The structure of the OFET ensures that the gate electrode (5) of an OFET can be used as a strip conductor to the source electrode (2) of the next transistor and can be used in the construction of larger circuits. .

Description

Beschreibungdescription

Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum, ein Verfahren zu dessen Erzeugung und die Verwendung in der organischen Elektronik.Organic field effect transistor with photo-structured gate dielectric, a method for its production and its use in organic electronics.

Die vorliegende Erfindung betrifft organische Feldeffekt- Transistoren, sogenannte OFETs, mit fotostrukturiertem Gate- Dielektrikum sowie ein Verfahren zu dessen Herstellung und die Verwendung dieser Feldeffekt-Transistoren in der organischen Elektronik.The present invention relates to organic field-effect transistors, so-called OFETs, with a photo-structured gate dielectric, and to a method for the production thereof and the use of these field-effect transistors in organic electronics.

Feldeffekt-Transistoren spielen auf allen Gebieten der Elektronik eine zentrale Rolle. Um sie an besondere Anwendungszwe- cke anzupassen, war es erforderlich sie leichter und flexibler zu gestalten. Durch die Entwicklung von halbleitenden und leitenden Polymeren wurde die Erzeugung von sogenannten organischen Feldeffekt-Transistoren möglich, die in allen Teilen, einschließlich der Halbleiterschicht sowie der Source- , Drain- und Gate-Elektroden aus Polymermaterialien hergestellt sind.Field effect transistors play a central role in all areas of electronics. In order to adapt them to special applications, it was necessary to make them lighter and more flexible. The development of semiconducting and conducting polymers has made it possible to produce so-called organic field-effect transistors, which are made of polymer materials in all parts, including the semiconductor layer and the source, drain and gate electrodes.

Bei der Herstellung organischer Feldeffekt-Transistoren müssen jedoch mehrere organische Schichten übereinander struktu- riert werden, um beispielsweise ein OFET des allgemeinen Aufbaus, wie er in Fig. 1 dargestellt ist, zu erhalten. Das ist mit herkömmlicher Fotolithografie, welche eigentlich zur Strukturierung von anorganischen Materialien dient, nur sehr eingeschränkt möglich. Die bei der Fotolithografie üblichen Arbeitsschritte greifen bzw. lösen die organischen Schichten an und machen diese somit unbrauchbar. Dies geschieht beispielsweise beim Aufschleudern, beim Entwickeln und beim Ablösen eines Fotolackes.In the production of organic field-effect transistors, however, several organic layers must be structured one above the other in order to obtain, for example, an OFET of the general structure as shown in FIG. 1. This is only possible to a very limited extent with conventional photolithography, which is actually used to structure inorganic materials. The usual steps in photolithography attack or detach the organic layers and thus make them unusable. This happens, for example, when spin coating, developing and removing a photoresist.

Dieses Problem wurde mit einem organischen Feldeffekt- Transistor gelöst, wie er in Applied Physics Letters 1998, Seite 108 ff. beschrieben ist. Als Substrat wird hier ein Po- This problem was solved with an organic field effect transistor, as described in Applied Physics Letters 1998, page 108 ff. A substrate is used here as the substrate.

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1 CD 1 1 l 1 • 1 CD 1 1 l 1 •

Aufgabe der vorliegenden Erfindung war es daher einen organischen Feldeffekt-Transistor bzw. ein Verfahren zu dessen Herstellung anzugeben, das den Einsatz der Fotolithografie ohne das Angreifen bzw. Anlösen der organischen Schichten in allen Arbeitsschritten zulässt sowie einen Strukturaufbau ermöglicht, der die Durchkontaktierung zwischen Leiterbahnen auf verschiedenen Ebenen in organischen integrierten Schaltungen in einfacher Weise ermöglicht. Die organischen Feldeffekt- Transistoren sollten dabei gleichzeitig kostengünstig und wirtschaftlich in einfachen Arbeitsschritten herstellbar sein.It was therefore an object of the present invention to provide an organic field-effect transistor and a method for its production, which permits the use of photolithography in all work steps without attacking or detaching the organic layers and enables a structure to be established which enables the through-connection between conductor tracks allows different levels in organic integrated circuits in a simple manner. The organic field effect transistors should be inexpensive and economical to manufacture in simple steps.

Gegenstand der vorliegenden Erfindung ist demnach ein organischer Feldeffekt-Transistor, der sich dadurch auszeichnet, dass auf einem flexiblen Substrat in einer ersten SchichtThe present invention accordingly relates to an organic field effect transistor, which is characterized in that on a flexible substrate in a first layer

Source- und Drain-Elektroden sowie ein Halbleiter angeordnet sind, auf dem in einer zweiten Schicht ein Isolator strukturiert ausgebildet und auf den in einer dritten Schicht eine Gate-Elektrode aufgebracht ist (top-gate-Struktur) .Source and drain electrodes and a semiconductor are arranged, on which an insulator is structured in a second layer and on which a gate electrode is applied in a third layer (top-gate structure).

Der erfindungsgemäße organische Feldeffekt-Transistor ist leicht und äußerst flexibel, da er nur aus organischen Schichten aufgebaut ist, die überwiegend mittels Fotolithografie, jedoch ohne Verwendung von Fotolack, strukturiert sind. Durch das Strukturieren insbesondere der Isolatorschicht kann die Gate-Elektrode des erfindungsgemäßen organischen Feldeffekt-Transistors gleichzeitig als Leiterbahn zur Source-Elektorde des nächsten Transistors genutzt werden.The organic field-effect transistor according to the invention is light and extremely flexible, since it is only made up of organic layers which are mainly structured by means of photolithography, but without the use of photoresist. By structuring, in particular, the insulator layer, the gate electrode of the organic field-effect transistor according to the invention can simultaneously be used as a conductor track to the source electrode of the next transistor.

Vorteilhafte Ausgestaltungen des Erfindungsgegenstandes ergeben sich aus den Unteransprüchen 1 bis 10.Advantageous refinements of the subject matter of the invention result from subclaims 1 to 10.

So können als Substrat hauchdünne Gläser, aus Kostengründen jedoch bevorzugt Kunststofffolien, eingesetzt werden. Poly- ethylenterephthalat- und Polyimidfolien werden insbesondere bevorzugt. Das Substrat sollte in jedem Fall so leicht und flexibel wie möglich sein. Da die Dicke des Substrates die eigentliche Dicke des gesamten Bauelementes bestimmt, alle anderen Schichten sind zusammen nur etwa 1000 nm dick, sollte auch die Substratdicke so gering wie möglich gehalten werden. Sie liegt überlicherweise im Bereich von etwa 0,05 - 0,5 mm.For example, wafer-thin glasses can be used as the substrate, but plastic foils are preferred for reasons of cost. Polyethylene terephthalate and polyimide films are particularly preferred. In any case, the substrate should be as light and flexible as possible. Because the thickness of the substrate The actual thickness of the entire component is determined, all other layers together are only about 1000 nm thick, the substrate thickness should also be kept as small as possible. It is usually in the range of about 0.05-0.5 mm.

Die Source- und Drain-Elektroden können aus den verschiedensten Materialien bestehen. Die Art des Materials wird wesentlich durch die Art der bevorzugten Herstellung bestimmt werden. So können beispielsweise Elektroden aus Indium-Zinn-Oxid (ITO) durch Fotolithografie auf mit ITO beschichteten Substraten erzeugt werden. Das ITO wird dabei auf den nicht vom Fotolack bedeckten Stellen weggeätzt. Auch können Elektroden aus Polyanilin (PANI) entweder durch Fotostrukturierung oder durch Fotolithografie auf mit PANI beschichteten Substraten erzeugt werden. Gleichermaßen können Elektroden aus leitfähigen Polymeren durch aufdrucken des leitfähigen Polymeres direkt auf das Substrat erzeugt werden. Leitfähige Polymere sind beispielsweise dotiertes Polyethylen (PEDOT) oder gegebenenfalls PANI.The source and drain electrodes can be made of a wide variety of materials. The type of material will be largely determined by the type of preferred manufacture. For example, electrodes made of indium tin oxide (ITO) can be produced by photolithography on substrates coated with ITO. The ITO is etched away on the areas not covered by the photoresist. Electrodes made of polyaniline (PANI) can also be produced either by photostructuring or by photolithography on substrates coated with PANI. Likewise, electrodes made of conductive polymers can be produced by printing the conductive polymer directly onto the substrate. Conductive polymers are, for example, doped polyethylene (PEDOT) or possibly PANI.

Die Halbleiterschicht besteht beispielsweise aus konjungier- ten Polymeren, wie Polythiophenen, Polythienylenvinylenen oder Polyfluorenderivaten, die aus Lösung durch spin-coating, Rakeln oder Bedrucken verarbeitbar sind. Für den Aufbau der Halbleiterschicht eignen sich auch sogenannte "small olecu- les", d.h. Oligomere wie Sexithiophen oder Pentacen, die durch eine Vakuumtechnik auf das Substrat aufgedampft werden.The semiconductor layer consists, for example, of conjugated polymers, such as polythiophenes, polythienylenevinylenes or polyfluorene derivatives, which can be processed from solution by spin coating, knife coating or printing. So-called "small olecules" are also suitable for the construction of the semiconductor layer, i.e. Oligomers such as sexithiophene or pentacene, which are vacuum-deposited onto the substrate.

Ein wesentlicher Aspekt des vorliegenden Erfindungsgegenstan- des ist jedoch die Art und Weise des Aufbaus der Isolatorschicht. Es handelt sich um einen vernetzten Isolator, der mittels Fotolithografie, also unter partieller Belichtung vernetzt und strukturiert wird. Ein Isolatormaterial wird mit einem Vernetzer unter saurer Katalyse stellenweise vernetzt.An essential aspect of the present subject matter of the invention, however, is the way in which the insulator layer is built up. It is a networked isolator that is networked and structured using photolithography, i.e. under partial exposure. An insulator material is crosslinked in places with a crosslinker under acid catalysis.

Im Rahmen der vorliegenden Erfindung geeignete Isolatormate- rialen sind beispielsweise Poly-4-hydroxystyrol oder Hydro- xylgruppen enthaltende Melamin-Formaldehyd-Harze. Der Vernetzer ist säureempfindlich und insbesondere Hexamethoxymethyl- melamin (HMMM) . Die saure Katalyse wird mittels eines Fotoinitiators, beispielsweise Diphenyliodoniumtetrafluoroborat oder Triphenylsulfoniumhexafluoroantimonat bewirkt, die unter dem Einfluss von Licht eine Säure bilden.Insulator materials suitable in the context of the present invention are, for example, poly-4-hydroxystyrene or hydro- Melamine-formaldehyde resins containing xyl groups. The crosslinker is sensitive to acids and especially hexamethoxymethyl melamine (HMMM). The acid catalysis is effected by means of a photoinitiator, for example diphenyliodonium tetrafluoroborate or triphenylsulfonium hexafluoroantimonate, which form an acid under the influence of light.

Die vorliegende Erfindung betrifft auch ein Verfahren zur Herstellung eines organischen Feldeffekt-Transistors, bei dem man in üblicher Weise ein flexibles Substrat mit einer Sour- ce- und Drain-Elektrode sowie einem Halbleiter versieht und sich dadurch auszeichnet, dass man auf dem Halbleiter einen Isolator aufbringt, indem eine Lösung eines Isololatormateri- als, die einen säureempfindlichen Vernetzer sowie einen Foto- Initiator enthält, aufträgt, durch eine Schattenmaske, welche Source- und Drain-Elektroden abdeckt, belichtet und anschließend tempert, wobei an den belichteten Stellen eine Vernetzung bewirkt wird und auf den so vernetzten und strukturierten Isolator die Gate-Elektrode aufgebracht wird.The present invention also relates to a method for producing an organic field effect transistor, in which a flexible substrate is provided in the usual way with a source and drain electrode and a semiconductor, and is characterized in that an insulator is provided on the semiconductor is applied by applying a solution of an isolator material, which contains an acid-sensitive crosslinker and a photo initiator, through a shadow mask, which covers the source and drain electrodes, and then anneals, causing crosslinking at the exposed areas and the gate electrode is applied to the networked and structured insulator.

Einzelheiten und bevorzugte Ausführungsformen des erfindungsgemäßen Verfahrens ergeben sich aus den Unteransprüchen 12 bis 18. Die Erfindung wird im Folgenden anhand der Fig. 1 bis 3 sowie eines Ausführungsbeispieles näher erläutert.Details and preferred embodiments of the method according to the invention result from subclaims 12 to 18. The invention is explained in more detail below with reference to FIGS. 1 to 3 and an exemplary embodiment.

In den Zeichnungen zeigen:The drawings show:

Fig. 1 den Aufbau eines herkömmlichen OFETs; Fig. 2 den Aufbau eines erfindungsgemäßen OFETs; und Fig. 3 chemische Reaktionen, die der Herstellung der vernetzten, strukturierten Isolatorschicht zugrundeliegen.1 shows the structure of a conventional OFET; 2 shows the structure of an OFET according to the invention; and FIG. 3 chemical reactions on which the production of the cross-linked, structured insulator layer is based.

Ein herkömmlicher OFET besteht aus einem Substrat 1, Source- bzw. Drain-Elektroden 2 und 2', einem Halbleiter 3, einem I- solator 4 und der Gate-Elektrode 5. Bei dem herkömmlichen 0- ω ω I\3 N3 P>A conventional OFET consists of a substrate 1, source or drain electrodes 2 and 2 ', a semiconductor 3, an isolator 4 and the gate electrode 5. In the conventional 0- ω ω I \ 3 N3 P>

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Bei dem vorliegenden Verfahren wird also das Gate- Dielektrikum durch Fotolithografie ohne Verwendung von Fotolack erzeugt. Im Resultat ergibt sich ein OFET dessen Gate- Elektrode gleichzeitig als Leiterbahn zur Source-Elektrode des nächsten Transistors genutzt werden kann. Eine Durchkon- taktierung zwischen Leiterbahnen auf verschiedenen Ebenen in organischen integrierten Schaltungen wird ermöglicht.In the present method, the gate dielectric is therefore produced by photolithography without the use of photoresist. The result is an OFET whose gate electrode can simultaneously be used as a conductor track to the source electrode of the next transistor. Through-contacting between conductor tracks on different levels in organic integrated circuits is made possible.

Hierfür wird nachfolgend ein Ausführungsbeispiel angegeben, das die Reaktionsbedingungen im Einzelnen angibt.For this purpose, an embodiment is given below, which specifies the reaction conditions in detail.

Ausführungsbeispiel für das Erzeugen eines Gate-DielektrikumsEmbodiment for generating a gate dielectric

5ml einer 10%igen Lösung von Poly-4-Hydroxystyrol in Dioxan werden mit 20 mg Hexamethoxymethylmelamin und einer katalyti- schen Spur Diphenyliodoniumtetrafluoroborat versetzt und durch spin-coating auf ein Substrat, auf dem sich bereits E- lektroden und Halbleiter befinden, flächig aufgebracht. Das Substrat wird durch eine Schattenmaske belichtet und an- schließend 30 Minuten bei 120°C getempert. Nach dem Abkühlen wird der Isolator an den nichtbelichteten und damit nichtver- netzten Stellen durch intensives Spülen bzw. Einlegen mit bzw. in n-Butanol entfernt. Die Gate-Elektrode wird darauf ausgebildet.5 ml of a 10% solution of poly-4-hydroxystyrene in dioxane are mixed with 20 mg hexamethoxymethylmelamine and a catalytic trace of diphenyliodonium tetrafluoroborate and applied by spin-coating to a substrate on which electrodes and semiconductors are already located. The substrate is exposed through a shadow mask and then annealed at 120 ° C for 30 minutes. After cooling, the insulator is removed from the unexposed and therefore not crosslinked areas by intensive rinsing or insertion with or in n-butanol. The gate electrode is formed thereon.

Die erfindungsgemäßen OFETs eignen sich hervorragend für Anwendungen im Bereich der organischen Elektronik und insbesondere bei der Herstellung von Identifizierungsstickern (Ident- Tags) , elektronischen Wasserzeichen, elektronischen Bar- Codes, elektronischem Spielzeug, elektronischen Tickets, für die Anwendung im Produkt- bzw. Plagiatschutz oder der Anti- Diebstahlssicherung. The OFETs according to the invention are outstandingly suitable for applications in the field of organic electronics and in particular in the production of identification stickers (ident tags), electronic watermarks, electronic bar codes, electronic toys, electronic tickets, for use in product or plagiarism protection or the anti-theft protection.

Claims

Patentansprüche claims 1. Organischer Feldeffekt-Transistor, d a d u r c h g e k e n n z e i c h n e t , dass auf einem flexiblen Substrat (1) in einer ersten Schicht Source- und Drain- Elektroden (2, 2') sowie ein Halbleiter (3) angeordnet sind, auf dem in einer zweiten Schicht ein Isolator (4) strukturiert ausgebildet und auf dem in einer dritten Schicht eine Gate-Elektrode (5) aufgebracht ist.1. Organic field effect transistor, characterized in that on a flexible substrate (1) in a first layer source and drain electrodes (2, 2 ') and a semiconductor (3) are arranged on which an insulator in a second layer (4) structured and on which a gate electrode (5) is applied in a third layer. 2. Organischer Feldeffekt-Transistor nach Anspruch 1, dadurch gekennzeichnet, das das Substrat dünnstes Glas (Glasfolie) oder eine Kunststofffolie ist.2. Organic field effect transistor according to claim 1, characterized in that the substrate is the thinnest glass (glass film) or a plastic film. 3. Organischer Feldeffekt-Transistor nach Anspruch 2, dadurch gekennzeichnet, dass das Substrat (1) Polyethylen- terephthalat oder insbesondere Polyimidfolie ist.3. Organic field effect transistor according to claim 2, characterized in that the substrate (1) is polyethylene terephthalate or in particular polyimide film. 4. Organischer Feldeffekt-Transistor nach einem der Ansprü- ehe 1 bis 3, dadurch gekennzeichnet, dass die Source- und Drain-Elektroden (2, 2') aus Indium-Zinn-Oxid (ITO), Po- lyanilin (PANI) und/oder leitfähigen Polymeren gebildet ist.4. Organic field effect transistor according to one of claims 1 to 3, characterized in that the source and drain electrodes (2, 2 ') made of indium tin oxide (ITO), polyaniline (PANI) and / or conductive polymers is formed. 5. Organischer Feldeffekt-Transistor nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass der Halbleiter , (3) aus konjugierten Polymeren oder Oligomeren gebildet ist.5. Organic field effect transistor according to one of claims 1 to 4, characterized in that the semiconductor, (3) is formed from conjugated polymers or oligomers. 6. Organischer Feldeffekt-Transistor nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass der Isolator (4) aus einem mit einem Vernetzer in Gegenwart eines Fotoinitiators vernetzten Isolatormaterial gebildet ist.6. Organic field effect transistor according to one of claims 1 to 5, characterized in that the insulator (4) is formed from an insulator material crosslinked with a crosslinker in the presence of a photoinitiator. 7. Organischer Feldeffekt-Transistor nach Anspruch 6, dadurch gekennzeichnet, dass das Isolatormaterial aus Poly- 4-hydroxystyrol oder aus Hydroxylgruppen enthaltenden Mela in-Formaldehydharzen ausgewählt ist.7. Organic field effect transistor according to claim 6, characterized in that the insulator material made of poly 4-hydroxystyrene or from Mela in-formaldehyde resins containing hydroxyl groups is selected. 8. Organischer Feldeffekt-Transistor nach Anspruch 6 oder 7, dadurch gekennzeichnet, dass der Vernetzer säureempfindlich, insbesondere Hexamethoxy ethylmelamin (HMM) ist.8. Organic field effect transistor according to claim 6 or 7, characterized in that the crosslinker is sensitive to acid, in particular hexamethoxy ethyl melamine (HMM). 9. Organischer Feldeffekt-Transistor nach einem der Ansprüche 6 bis 8, dadurch gekennzeichnet, dass der Fotoinita- tor aus Diphenyliodoniumtetrafluoroborat und Triphenyl- sulfoniumhexafluoroantimonat ausgewählt ist.9. Organic field effect transistor according to one of claims 6 to 8, characterized in that the photoinitiator is selected from diphenyl iodonium tetrafluoroborate and triphenyl sulfonium hexafluoroantimonate. 10.Organischer Feldeffekt-Transistor nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, dass die Gate- Elektrode aus Polyanilin, anderen leitfähigen Polymeren oder Carbon Black gebildet ist.10. Organic field effect transistor according to one of claims 1 to 9, characterized in that the gate electrode is formed from polyaniline, other conductive polymers or carbon black. 11.Verfahren zur Herstellung eines organischen Feldeffekt- Transistors bei dem man in üblicher Weise ein flexibles Substrat (1) mit einer Source- und Drain-Elektrode (2,11.Method for producing an organic field effect transistor in which a flexible substrate (1) with a source and drain electrode (2, 2') sowie einem Halbleiter (3) versieht, d a d u r c h g e k e n n z e i c h n e t , dass man auf dem Halbleiter (3) einen Isolator (4) aufbringt, indem eine Lösung eines Isolatormaterials, die einen säureempfindlichen Vernetzer sowie einen Fotoinitiator enthält aufträgt, durch eine Schattenmaske, welche Source- und Drain- Elektroden (2, 2') abdeckt, belichtet und anschließend tempert, wobei an den belichteten Stellen eine Vernetzung bewirkt wird und auf den so vernetzten und strukturierten Isolator (4) die Gate-Elektrode (5) aufgebracht wird.2 ') and a semiconductor (3), characterized in that an insulator (4) is applied to the semiconductor (3) by applying a solution of an insulator material, which contains an acid-sensitive crosslinker and a photoinitiator, through a shadow mask, which source - and drain electrodes (2, 2 ') are covered, exposed and then tempered, crosslinking being effected at the exposed areas and the gate electrode (5) being applied to the insulator (4) crosslinked and structured in this way. 12.Verfahren nach Anspruch 11, dadurch gekennzeichnet, dass das Isolatormaterial aus Poly-4-hydroxystyrol oder aus Hydroxylgruppen enthaltenden Melamin-Formaldehydharzen ausgewählt wird. 12.The method according to claim 11, characterized in that the insulator material is selected from poly-4-hydroxystyrene or from melamine-formaldehyde resins containing hydroxyl groups. 13.Verfahren nach Anspruch 11 oder 12, dadurch gekennzeichnet, dass der Vernetzer säureempfindlich, insbesondere Hexamethoxymethylmelamin (HMMM)ist.13. The method according to claim 11 or 12, characterized in that the crosslinker is acid-sensitive, in particular hexamethoxymethylmelamine (HMMM). 14.Verfahren nach Anspruch 13, dadurch gekennzeichnet, dass der Fotoinitiator unter Einwirkung von Licht eine Säure bildet und insbesondere aus Diphenyliodoniumtetrafluoro- borat und Triphenylsulfoniumhexaantimonat ausgewählt wird.14. The method according to claim 13, characterized in that the photoinitiator forms an acid under the action of light and is selected in particular from diphenyliodonium tetrafluoroborate and triphenylsulfonium hexaantimonate. 15.Verfahren nach einem der Ansprüche 11 bis 14, dadurch gekennzeichnet, dass die das Isolatormaterial, den Vernetzer und den Fotoinitiator enthaltende Lösung durch spin- coating oder Rakeln aufgetragen wird.15. The method according to any one of claims 11 to 14, characterized in that the solution containing the insulator material, the crosslinking agent and the photoinitiator is applied by spin coating or knife coating. 16.Verfahren nach einem der Ansprüche 1 bis 15, dadurch gekennzeichnet, dass mit UV-Licht belichtet wird.16.The method according to any one of claims 1 to 15, characterized in that exposure is carried out with UV light. 17.Verfahren nach einem der Ansprüche 1 bis 16, dadurch ge- kennzeichnet, dass bei einer Temperatur zwischen 100°C und 140°C getempert wird.17. The method according to any one of claims 1 to 16, characterized in that the temperature is between 100 ° C and 140 ° C. 18.Verfahren nach Anspruch 17, dadurch gekennzeichnet, dass bei einer Temperatur von 120°C getempert wird.18. The method according to claim 17, characterized in that annealing is carried out at a temperature of 120 ° C. 19.Verwendung des organischen Feldeffekttransistors nach einem der vorhergehenden Ansprüche in der organischen Elektronik.19.Use of the organic field effect transistor according to one of the preceding claims in organic electronics. 20.Verwendung des organischen Feldeffekttransistors nach einem der vorhergehenden Ansprüche für Identifizierungssti- cker (Ident-Tags) , elektronische Wasserzeichen, elektronische Bar-Codes, elektronisches Spielzeug, elektronische Tickets, im Produkt- bzw. Plagiatschutz oder der Anti- Diebstahlsicherung. 20.Use of the organic field effect transistor according to one of the preceding claims for identification tags (ident tags), electronic watermarks, electronic bar codes, electronic toys, electronic tickets, in product or plagiarism protection or anti-theft protection.
EP02706645A 2001-02-09 2002-01-29 Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics Withdrawn EP1358684A1 (en)

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