EP1086507B1 - Resistive-load hyperfrequency passive component - Google Patents
Resistive-load hyperfrequency passive component Download PDFInfo
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- EP1086507B1 EP1086507B1 EP99925061A EP99925061A EP1086507B1 EP 1086507 B1 EP1086507 B1 EP 1086507B1 EP 99925061 A EP99925061 A EP 99925061A EP 99925061 A EP99925061 A EP 99925061A EP 1086507 B1 EP1086507 B1 EP 1086507B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
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- the present invention relates to the field of passive components microwave and more particularly passive microwave components to resistive load intended for power dissipation comprising an element resistive suitable from 25 to 75 ohms and, most often to the standard of 50 ohms.
- microwave-ribbons These components are used in different microwave systems (to from 0.5 GHz) and are intended to protect installations by dissipating through a suitable support the non-active energy of the system in the event of dysfunction. They are most often connected on line structures so-called “micro-ribbons”.
- Passive microwave components generally have a power dissipation support, on which a range of wiring, a ground range and a resistive layer having resistance standard between wiring range and ground range and also include microwave adaptation elements.
- JP-07 221 509 which relates to the adaptation of a component with elements external to it, but this component does not have a simple internal adaptation and a fortiori internal adaptation of multiple order.
- the prior art also knows passive microwave components comprising a beryllium oxide dissipation support, so as to promote the heat exchange between the power absorbed by the resistive load and this support of reception and diffusion of heat on which the resistive load is etched.
- Beryllium oxide is one of the materials with the best compromise between high thermal conductivity and low constant dielectric.
- the present invention further proposes to use a support material which is not harmful, in this case aluminum oxide AL 2 O 3 or alumina.
- the depositor has developed a component image such that it allows obtaining characteristics at least equal, sometimes even superior to the characteristics beryllium oxide supports, while keeping the same dimensioning.
- Alumina also has the advantage of being much less expensive to manufacture and much easier to implement.
- the present invention also proposes to use a support material made of aluminum nitride.
- An important advantage of the invention is to allow a passive microwave component with an alumina support, unique, added, which is frequency adapted for a power greater than 30 Watts and up to 60 to 80 Watts and even more.
- the component according to the invention makes it possible for example to obtain a very low TOS close to 1 for a given frequency or for a frequency range which can to be very tall.
- the component allows for example to obtain a TOS less than 1.05 between 0.5 GHz and 3.5 GHz.
- the geometric dimension of the adaptation elements is adapted to the dimension and power of the component.
- the present invention relates to a passive microwave component with resistive load (1) intended for power dissipation, illustrated in FIGS. 1 and 2, comprising a support (2), a wiring range (3), a mass range (4) and a resistive layer (5) having a standard resistance between the wiring range (3) and the mass range (4).
- the component according to the invention is characterized in that it comprises completely inductive and capacitive microwave adapters integrated, outside the resistive layer (5) in order to carry out an order adaptation multiple, by multiplying the inductive elements in series and the capacitive elements in parallel.
- the component according to the invention is also characterized in that said microwave adaptation elements have geometric dimensions adapted to the size and power of the component.
- Metallization is carried out on the underside (7) of the component (1). It constitutes the mass connection and is therefore called the mass ".
- the resistive layer (5) is deposited on the upper surface (8) of the component (1), in contact with the two metal wiring areas (3) and mass (4).
- the wiring range (3) constitutes the load input connection resistive and the mass range (4) allows the connection with the ground plane (7) by through one or more holes (6) whose walls are metallized, opening on either side of the upper and lower surfaces.
- Figure 5 shows a simplified equivalent diagram of the resistive load complete of Figures 1 and 2.
- the resistive layer (5) is modeled by the resistance R5 which is the element load main, supplemented by capacitance C5 and inductance L5 arranged between the resistive layer (5) and the ground plane (7).
- compensation for so-called first order faults is performed by adding an inductor additional L6 produced for example by the metallized hole or holes.
- This assembly constitutes, according to the state of the art, an adaptation circuit of order 2.
- FIGS. 3 and 4 we find the same elements as in the simple version illustrated in FIGS. 1 and 2, but the ranges metallized (3) and (4) are produced in a more complex pattern.
- Said pre-resistance inductive element (9) can be, for example, constituted a narrow line (12).
- Said pre-resistance capacitive element (10) can for example be constituted a wide line (13), and / or an insulating gap (15).
- Said post-resistance inductive elements (11) can, for example, be consisting of one or more holes (6) whose walls are metallized and / or a narrow line (14).
- the component (1) illustrated by way of example in FIGS. 3 and 4 comprises a pre-resistance inductive element (9), one pre-resistance capacitive element (10) and two post-resistance inductive elements (11) consisting of holes (6) and a line narrow (14).
- the narrow line (12) forms an inductor in series L9
- the wide line (13) forms a capacitance in parallel C10
- the narrow line (14) constitutes an inductance complementary L11.
- Figure 6 shows the role of elements C10, L9, L11 and L6 as compensators for elements C5 and L5 contained in the resistive layer (5) in addition of the main element R5.
- the above set constitutes, according to the state of the art, a fourth order adaptation circuit capable of compensate for faults in the impedance measured at range (3) up to the third order.
- the support (2) is made of aluminum oxide.
- the component according to the invention makes it possible to dissipate energies from 5 to 100 Watts, while keeping the same size as the beryllium oxide components.
- the operating frequencies can reach 1 to 5 GHz or more depending on the power to dissipate.
- FIGS 8 and 9 which illustrate the respective Smith diagrams of curves A and B clearly show that, in the case of a conventional component, the impedance is only capacitive whereas in the case of a component according to the invention, the impedance is alternately inductive then capacitive, then inductive.
- the support (2) is made of aluminum nitride.
- the component according to the invention thus produced achieves performance of higher dissipated power (at specified frequency) or frequencies of higher operating performance (at a given power loss) than that of the components made of Beryllium oxide.
- the mass return is preferably done by tranche Metallic.
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Description
La présente invention se rapporte au domaine des composants passifs hyperfréquence et plus particulièrement aux composants passifs hyperfréquence à charge résistive destinés à la dissipation de puissance comportant un élément résistif adapté de 25 à 75 ohms et, le plus souvent au standard de 50 ohms.The present invention relates to the field of passive components microwave and more particularly passive microwave components to resistive load intended for power dissipation comprising an element resistive suitable from 25 to 75 ohms and, most often to the standard of 50 ohms.
Ces composants sont utilisés dans différents systèmes hyperfréquences (à partir de 0,5 GHz) et sont destinés à protéger les installations en dissipant au travers d'un support adapté l'énergie non active du système en cas de dysfonctionnement. Ils sont le plus souvent connectés sur des structures de lignes hyperfréquences dites « micro-rubans ».These components are used in different microwave systems (to from 0.5 GHz) and are intended to protect installations by dissipating through a suitable support the non-active energy of the system in the event of dysfunction. They are most often connected on line structures so-called “micro-ribbons”.
Les composants passifs hyperfréquence comportent généralement un support de dissipation de puissance, sur lequel sont positionnés une plage de câblage, une plage de masse et une couche résistive présentant une résistance standard entre la plage de câblage et la plage de masse et comportent également des éléments d'adaptation hyperfréquence.Passive microwave components generally have a power dissipation support, on which a range of wiring, a ground range and a resistive layer having resistance standard between wiring range and ground range and also include microwave adaptation elements.
L'art antérieur connaít déjà des dispositifs dans lesquels des éléments d'adaptation hyperfréquences sont associés à une charge résistive.The prior art already knows devices in which elements microwave adapters are associated with a resistive load.
L'art antérieur connaít par exemple la demande de brevet français FR-A-2 096 858 qui porte sur une charge résistive, mais cette charge ne constitue pas un composant destiné à la dissipation de puissance et l'adaptation est réalisée en disposant un film résistif sur la flanc du support. Or cette technique de mise en oeuvre de la charge résistive est très complexe à maítriserThe prior art for example knows the French patent application FR-A-2 096 858 which relates to a resistive load, but this load does not constitute not a component intended for power dissipation and adaptation is carried out by placing a resistive film on the side of the support. Now this technique of setting resistive load is very complex to master
L'art antérieur connaít également la demande de brevet japonaise JP-07 221 509 qui porte sur l'adaptation d'un composant avec des éléments extérieur à celui-ci, mais ce composant ne comporte pas d'adaptation interne simple et a fortiori d'adaptation interne d'ordre multiple.The prior art also knows the Japanese patent application JP-07 221 509 which relates to the adaptation of a component with elements external to it, but this component does not have a simple internal adaptation and a fortiori internal adaptation of multiple order.
L'art antérieur connaít également les réseaux d'adaptation multiple combinant des éléments inductifs et capacitifs notamment par le document de G.L. Matthaei et al. : « Microwave Filters, impedance-matching networks, and coupling structures », Artech House, Dedham, 1980, pages 120-130.The prior art also knows the multiple adaptation networks combining inductive and capacitive elements in particular by the document by G.L. Matthaei et al. : "Microwave Filters, impedance-matching networks, and coupling structures", Artech House, Dedham, 1980, pages 120-130.
L'art antérieur connaít aussi des composants passifs hyperfréquences comportant un support de dissipation en oxyde de béryllium, de façon à favoriser l'échange thermique entre la puissance absorbée par la charge résistive et ce support d'accueil et de diffusion de la chaleur sur lequel la charge résistive est gravée.The prior art also knows passive microwave components comprising a beryllium oxide dissipation support, so as to promote the heat exchange between the power absorbed by the resistive load and this support of reception and diffusion of heat on which the resistive load is etched.
L'oxyde de béryllium est un des matériaux qui présentent le meilleur compromis entre une forte conductivité thermique et une faible constante diélectrique.Beryllium oxide is one of the materials with the best compromise between high thermal conductivity and low constant dielectric.
L'inconvénient majeur de l'oxyde de béryllium est sa nocivité et c'est la raison pour laquelle son utilisation est soumise à de nombreuses contraintes. Il existe, suivant les législations nationales, des obligations :
- de notification claire de la présence d'oxyde de béryllium sur le produit fini,
- de description du produit suivant les règlements d'hygiène et de sécurité,
- de contrôle du retrait des appareils usagés et de leur recyclage,...
- clear notification of the presence of beryllium oxide on the finished product,
- description of the product according to health and safety regulations,
- to control the removal of used devices and their recycling, ...
La présente invention entend remédier aux inconvénients de l'art antérieur en proposant un composant passif hyperfréquence à charge résistive destiné à la dissipation de puissance, comportant un support, une plage de câblage, une plage de masse et une couche résistive présentant une résistance standard entre la plage de câblage et la plage de masse, caractérisé en ce qu'il comporte des éléments d'adaptation hyperfréquences capacitifs et inductifs complètement intégrés. extérieurs à la couche résistive, afin de réaliser une adaptation d'ordre multiple, en multipliant les éléments inductifs en série et les éléments capacitifs en parallèle, qui sont constitués :
- d'un ou de plusieurs éléments inductifs pré-résistance situés en série entre la plage de câblage et la couche résistive et,
- d'un ou de plusieurs éléments capacitifs pré-résistance situés en parallèle entre la plage de câblage et la couche résistive et,
- d'un ou de plusieurs éléments inductifs post-résistance situés en série entre la couche résistive et la plage de masse.
- one or more inductive pre-resistance elements located in series between the wiring range and the resistive layer and,
- one or more pre-resistance capacitive elements located in parallel between the wiring area and the resistive layer and,
- one or more post-resistance inductive elements located in series between the resistive layer and the mass range.
La présente invention propose, en outre, d'utiliser un matériau de support qui n'est pas nocif, en l'occurrence l'oxyde d'aluminium AL2O3 ou alumine.The present invention further proposes to use a support material which is not harmful, in this case aluminum oxide AL 2 O 3 or alumina.
Pour compenser les moins bonnes qualités de l'alumine, le déposant a développé une image de composant telle qu'elle permette d'obtenir des caractéristiques au moins égales, parfois même supérieures aux caractéristiques des supports en oxyde de béryllium, tout en gardant le même dimensionnement.To compensate for the poorer qualities of alumina, the depositor has developed a component image such that it allows obtaining characteristics at least equal, sometimes even superior to the characteristics beryllium oxide supports, while keeping the same dimensioning.
L'alumine présente en plus l'avantage d'être beaucoup moins coûteuse à fabriquer et beaucoup plus facile à mettre en oeuvre. Alumina also has the advantage of being much less expensive to manufacture and much easier to implement.
La présente invention propose également d'utiliser un matériau de support en nitrure d'aluminium.The present invention also proposes to use a support material made of aluminum nitride.
Un avantage important de l'invention est de permettre de réaliser un composant passif hyperfréquence à support en alumine, unique, rapporté, qui soit adapté en fréquence pour une puissance supérieure à 30 Watts et pouvant atteindre 60 à 80 Watts et même plus.An important advantage of the invention is to allow a passive microwave component with an alumina support, unique, added, which is frequency adapted for a power greater than 30 Watts and up to 60 to 80 Watts and even more.
Le composant selon l'invention permet par exemple d'obtenir un TOS très proche de 1 pour une fréquence donnée ou pour une plage de fréquence qui peut être très grande.The component according to the invention makes it possible for example to obtain a very low TOS close to 1 for a given frequency or for a frequency range which can to be very tall.
Le composant permet par exemple d'obtenir un TOS inférieur à 1, 05 entre 0, 5 GHz et 3,5 GHz. The component allows for example to obtain a TOS less than 1.05 between 0.5 GHz and 3.5 GHz.
Pour obtenir ces résultats, il est nécessaire de réaliser un adaptation multiple à la fois en inductance et en capacité.To obtain these results, it is necessary to carry out a multiple adaptation both in inductance and in capacity.
La dimension géométrique des éléments d'adaptation est adaptée à la dimension et à la puissance du composant.The geometric dimension of the adaptation elements is adapted to the dimension and power of the component.
Selon l'invention, l'adaptation multiple peut être réalisée par :
- un ou plusieurs éléments inductifs pré-résistance situés en série entre la plage de câblage et la couche résistive ; et / ou
- un ou plusieurs éléments capacitifs pré-résistance situés en parallèle entre la plage de câblage et la couche résistive ; et / ou
- un ou plusieurs éléments inductifs post-résistance situés en série entre la couche résistive et la plage de masse.
- one or more inductive pre-resistance elements located in series between the wiring area and the resistive layer; and or
- one or more pre-resistance capacitive elements located in parallel between the wiring area and the resistive layer; and or
- one or more post-resistance inductive elements located in series between the resistive layer and the mass range.
D'autres avantages ressortiront de la description faite ci-après de l'invention à titre purement explicatif en référence aux figures annexées :
- les figures 1 et 2 illustrent une version simple du composant selon l'invention, vu respectivement en perspective et en coupe selon AA,
- les figures 3 et 4 illustrent une version plus complexe du composant selon l'invention, vu respectivement en perspective et en coupe selon BB,
- la figure 5 illustre le schéma équivalent simplifié du composant simple des figures 1 et 2,
- la figure 6 illustre le schéma équivalent simplifié du composant complexe des figures 3 et 4.
- La figure 7 illustre un diagramme du TOS obtenu en fonction de la fréquence, grâce à un composant selon l'invention (courbe B) par rapport à un composant classique (courbe A),
- La figure 8 illustre le diagramme de Smith du composant de la courbe A, et
- La figure 9 illustre le diagramme de Smith du composant selon l'invention de la courbe B.
- FIGS. 1 and 2 illustrate a simple version of the component according to the invention, seen respectively in perspective and in section along AA,
- FIGS. 3 and 4 illustrate a more complex version of the component according to the invention, seen respectively in perspective and in section along BB,
- FIG. 5 illustrates the simplified equivalent diagram of the simple component of FIGS. 1 and 2,
- FIG. 6 illustrates the simplified equivalent diagram of the complex component of FIGS. 3 and 4.
- FIG. 7 illustrates a diagram of the TOS obtained as a function of frequency, using a component according to the invention (curve B) compared to a conventional component (curve A),
- FIG. 8 illustrates the Smith diagram of the component of curve A, and
- FIG. 9 illustrates the Smith diagram of the component according to the invention of curve B.
La présente invention se rapporte à un composant passif hyperfréquence à charge résistive (1) destiné à la dissipation de puissance, illustré figures 1 et 2, comportant un support (2), une plage de câblage (3), une plage de masse (4) et une couche résistive (5) présentant une résistance standard entre la plage de câblage (3) et la plage de masse (4).The present invention relates to a passive microwave component with resistive load (1) intended for power dissipation, illustrated in FIGS. 1 and 2, comprising a support (2), a wiring range (3), a mass range (4) and a resistive layer (5) having a standard resistance between the wiring range (3) and the mass range (4).
Le composant selon l'invention est caractérisé en ce qu'il comporte des éléments d'adaptation hyperfréquences inductifs et capacitifs complètement intégrés, extérieurs à la couche résistive (5) afin de réaliser une adaptation d'ordre multiple, en multipliant les éléments inductifs en série et les éléments capacitifs en parallèle.The component according to the invention is characterized in that it comprises completely inductive and capacitive microwave adapters integrated, outside the resistive layer (5) in order to carry out an order adaptation multiple, by multiplying the inductive elements in series and the capacitive elements in parallel.
Le composant selon l'invention est également caractérisé en ce que lesdits éléments d'adaptation hyperfréquence présentent des dimensions géométriques adaptées à la dimension et à la puissance du composant.The component according to the invention is also characterized in that said microwave adaptation elements have geometric dimensions adapted to the size and power of the component.
Une métallisation est réalisée sur la face inférieure (7) du composant (1). Elle constitue la connexion de masse et est dénommée pour cette raison « plan de masse ».Metallization is carried out on the underside (7) of the component (1). It constitutes the mass connection and is therefore called the mass ".
La couche résistive (5) est déposée sur la surface supérieure (8) du composant (1), en contact avec les deux plages métalliques de câblage (3) et de masse (4).The resistive layer (5) is deposited on the upper surface (8) of the component (1), in contact with the two metal wiring areas (3) and mass (4).
La plage de câblage (3) constitue la connexion d'entrée de la charge résistive et la plage de masse (4) permet la liaison avec le plan de masse (7) par l'intermédiaire de un ou de plusieurs trous (6) dont les parois sont métallisées, débouchant de part et d'autre des surfaces inférieure et supérieure.The wiring range (3) constitutes the load input connection resistive and the mass range (4) allows the connection with the ground plane (7) by through one or more holes (6) whose walls are metallized, opening on either side of the upper and lower surfaces.
Les mêmes résultats peuvent être obtenus avec un flan de retour de masse métallisé, mais la méthode est économiquement moins intéressante.The same results can be obtained with a mass return blank metallized, but the method is economically less attractive.
La figure 5 montre un schéma équivalent simplifié de la charge résistive complète des figures 1 et 2.Figure 5 shows a simplified equivalent diagram of the resistive load complete of Figures 1 and 2.
La couche résistive (5) est modélisée par la résistance R5 qui est l'élément principal de la charge, complétée par la capacité C5 ainsi que l'inductance L5 disposées entre la couche résistive (5) et le plan de masse (7).The resistive layer (5) is modeled by the resistance R5 which is the element load main, supplemented by capacitance C5 and inductance L5 arranged between the resistive layer (5) and the ground plane (7).
Aux fréquences élevées (domaine des hyperfréquences), ces deux derniers éléments font dévier l'impédance mesurée à la plage (3) de la valeur représentée par R5.At high frequencies (microwave domain), the latter two elements cause the measured impedance at range (3) to deviate from the value shown by R5.
Dans une certaine limite de fréquence supérieure, une compensation des défauts dits du premier ordre est effectuée en ajoutant une inductance supplémentaire L6 réalisée par exemple par le ou les trous métallisés.Within a certain upper frequency limit, compensation for so-called first order faults is performed by adding an inductor additional L6 produced for example by the metallized hole or holes.
Cet ensemble constitue, selon l'état de l'art, un circuit d'adaptation d'ordre 2.This assembly constitutes, according to the state of the art, an adaptation circuit of
Dans une autre version de l'invention, illustrée figures 3 et 4, on retrouve les mêmes éléments que dans la version simple illustrée figures 1 et 2, mais les plages métallisées (3) et (4) sont réalisées selon un motif plus complexe.In another version of the invention, illustrated in FIGS. 3 and 4, we find the same elements as in the simple version illustrated in FIGS. 1 and 2, but the ranges metallized (3) and (4) are produced in a more complex pattern.
Lesdits éléments d'adaptation hyperfréquences sont constitués :
- d'un ou de plusieurs éléments inductifs pré-résistance (9) situés en série entre la plage de câblage (3) et la couche résistive (5),
- d'un ou de plusieurs éléments capacitifs pré-résistance (10) situés en parallèle entre la plage de câblage (3) et la couche résistive (5), le phénomène capacitif étant créé entre la plage de câblage (3) et le plan de masse (7), et
- d'un ou de plusieurs éléments inductifs post-résistance (11) situés en série entre la couche résistive (5) et la plage de masse (4).
- one or more inductive pre-resistance elements (9) located in series between the wiring area (3) and the resistive layer (5),
- one or more pre-resistance capacitive elements (10) located in parallel between the wiring area (3) and the resistive layer (5), the capacitive phenomenon being created between the wiring area (3) and the plane of mass (7), and
- one or more post-resistance inductive elements (11) located in series between the resistive layer (5) and the mass range (4).
Ledit élément inductif pré-résistance (9) peut être, par exemple, constitué d'une ligne étroite (12).Said pre-resistance inductive element (9) can be, for example, constituted a narrow line (12).
Ledit élément capacitif pré-résistance (10) peut être, par exemple, constitué d'une ligne large (13), et / ou d'un intervalle isolant (15).Said pre-resistance capacitive element (10) can for example be constituted a wide line (13), and / or an insulating gap (15).
Lesdits éléments inductifs post-résistance (11) peuvent, par exemple, être constitués d'un ou de plusieurs trous (6) dont les parois sont métallisées et / ou d'une ligne étroite (14).Said post-resistance inductive elements (11) can, for example, be consisting of one or more holes (6) whose walls are metallized and / or a narrow line (14).
Le composant (1) illustré à titre d'exemple figures 3 et 4 comporte un élément inductif pré-résistance (9), un élément capacitif pré-résistance (10) et deux éléments inductifs post-résistance (11) constitués par des trous (6) et une ligne étroite (14).The component (1) illustrated by way of example in FIGS. 3 and 4 comprises a pre-resistance inductive element (9), one pre-resistance capacitive element (10) and two post-resistance inductive elements (11) consisting of holes (6) and a line narrow (14).
Sur la figure 6 montrant le schéma équivalent simplifié de cette dernière version, la ligne étroite (12) forme une inductance en série L9, la ligne large (13) forme une capacité en parallèle C10 et la ligne étroite (14) constitue une inductance complémentaire L11.In Figure 6 showing the simplified equivalent diagram of the latter version, the narrow line (12) forms an inductor in series L9, the wide line (13) forms a capacitance in parallel C10 and the narrow line (14) constitutes an inductance complementary L11.
La figure 6 montre le rôle des éléments C10, L9, L11 et L6 comme compensateurs des éléments C5 et L5 contenus dans la couche résistive (5) en sus de l'élément principal R5.Figure 6 shows the role of elements C10, L9, L11 and L6 as compensators for elements C5 and L5 contained in the resistive layer (5) in addition of the main element R5.
Dans une certaine limite de fréquence supérieure, l'ensemble ci-dessus constitue selon l'état de l'art, un circuit d'adaptation du quatrième ordre capable de compenser les défauts de l'impédance mesurée à la plage (3) jusqu'au troisième ordre.Within a certain upper frequency limit, the above set constitutes, according to the state of the art, a fourth order adaptation circuit capable of compensate for faults in the impedance measured at range (3) up to the third order.
On peut réaliser, grâce à l'invention, un niveau d'adaptation d'ordre multiple, ou d'ordre n, en multipliant les éléments inductifs (9) en série et les éléments capacitifs (10) en parallèle.It is possible, thanks to the invention, to achieve a level of adaptation of multiple order, or of order n, by multiplying the inductive elements (9) in series and the elements capacitive (10) in parallel.
Dans une version de l'invention, le support (2) est en oxyde d'aluminium.In one version of the invention, the support (2) is made of aluminum oxide.
Le composant selon l'invention permet de dissiper des énergies de 5 à 100 Watts, tout en gardant la même taille que les composants en oxyde de béryllium.The component according to the invention makes it possible to dissipate energies from 5 to 100 Watts, while keeping the same size as the beryllium oxide components.
Les fréquences d'utilisation peuvent atteindre 1 à 5 GHz ou plus selon la puissance à dissiper.The operating frequencies can reach 1 to 5 GHz or more depending on the power to dissipate.
De plus, de par sa configuration, il est très facile à câbler. In addition, due to its configuration, it is very easy to wire.
On constate sur la figure 7 que, pour une puissance de 30 Watts, le TOS obtenu grâce à un composant selon l'invention (courbe B), est bien meilleur que le TOS obtenu avec un composant classique (courbe A), pour des valeurs de fréquence de :
- référence 1 : 1 GHz,
- référence 2 : 1,5 GHz,
- référence 3 : 2 GHz,
- référence 4 : 2,5 GHz,
- référence 5 : 3 GHz,
- référence 6 : 3,5 GHz.
- reference 1: 1 GHz,
- reference 2: 1.5 GHz,
- reference 3: 2 GHz,
- reference 4: 2.5 GHz,
- reference 5: 3 GHz,
- reference 6: 3.5 GHz.
Les figures 8 et 9 qui illustrent les diagrammes de Smith respectifs des courbes A et B montrent bien que, dans le cas d'un composant classique, l'impédance est uniquement capacitive alors que dans le cas d'un composant selon l'invention, l'impédance est alternativement inductive puis capacitive, puis inductive.Figures 8 and 9 which illustrate the respective Smith diagrams of curves A and B clearly show that, in the case of a conventional component, the impedance is only capacitive whereas in the case of a component according to the invention, the impedance is alternately inductive then capacitive, then inductive.
Dans une autre version, le support (2) est en nitrure d'aluminium. Le composant selon l'invention ainsi réalisé permet d'atteindre des performances de puissance dissipée supérieure (à fréquence spécifiée) ou des fréquences de fonctionnement supérieure (à puissance dissipée donnée) à celles des composants en oxyde de Béryllium.In another version, the support (2) is made of aluminum nitride. The component according to the invention thus produced achieves performance of higher dissipated power (at specified frequency) or frequencies of higher operating performance (at a given power loss) than that of the components made of Beryllium oxide.
Dans cette version, le retour de masse se fait préférentiellement par tranche métallisée.In this version, the mass return is preferably done by tranche Metallic.
Claims (6)
- A passive microwave component with a resistive load (1), intended for power dissipation, comprising a substrate (2), a wire contact area (3), a ground contact area (4) and a resistive layer (5) presenting a standard resistance between the wire contact area (3) and the ground contact area (4), characterized in that it includes completely integrated capacitive and inductive microwave matching elements, external to the resistive layer (5), so as to achieve multiple-order matching by multiplying the series-connected inductive elements and the parallel-connected capacitive elements which consist of:one or more inductive preresistive elements (9) connected in series between the wire contact area (3) and the resistive layer (5);one or more capacitive preresistance elements (10) connected in parallel between the wire contact area (3) and the resistive layer (5); andone or more inductive postresistance elements (11) connected in series between the resistive layer (5) and the ground contact area (4).
- The passive microwave component with a resistive load (1) as claimed in claim 1, characterized in that said microwave matching elements have geometrical dimensions matched to the dimensions and to the power of the component.
- The passive microwave component with a resistive load (1) as claimed in either of the preceding claims, characterized in that said inductive preresistive element (9) consists of a narrow line (12).
- The passive microwave component with a resistive load (1) as claimed in one of the preceding claims, characterized in that said capacitive preresistance element (10) consists of a wide line (13).
- The passive microwave component with a resistive load (1) as claimed in one of the preceding claims, characterized in that said inductive postresistance elements (11) consist of one or more plated-through holes (6) passing through the substrate (2).
- The passive microwave component with a resistive load (1) as claimed in any one of claims 1 to 5, characterized in that said inductive postresistance element (11) consists of a narrow line (14).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9807468A FR2779577B1 (en) | 1998-06-09 | 1998-06-09 | PASSIVE MICROWAVE COMPONENT WITH RESISTIVE LOAD HAVING INTEGRATED MICROWAVE ADJUSTMENT ELEMENTS |
| FR9807468 | 1998-06-09 | ||
| PCT/FR1999/001362 WO1999065104A1 (en) | 1998-06-09 | 1999-06-09 | Resistive-load hyperfrequency passive component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1086507A1 EP1086507A1 (en) | 2001-03-28 |
| EP1086507B1 true EP1086507B1 (en) | 2003-08-13 |
Family
ID=9527352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP99925061A Expired - Lifetime EP1086507B1 (en) | 1998-06-09 | 1999-06-09 | Resistive-load hyperfrequency passive component |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1086507B1 (en) |
| AU (1) | AU4148199A (en) |
| DE (1) | DE69910383D1 (en) |
| FR (1) | FR2779577B1 (en) |
| WO (1) | WO1999065104A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102699882B1 (en) * | 2022-08-03 | 2024-08-29 | (주) 알엔투테크놀로지 | High power termination having common electrode |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2096858B1 (en) * | 1970-07-07 | 1973-11-16 | Thomson Csf | |
| FR2486720A1 (en) * | 1980-07-11 | 1982-01-15 | Thomson Csf | DEVICE FOR TERMINATING A TRANSMISSION LINE, IN HYPERFREQUENCY, AT MINIMUM STATIONARY WAVE RATES |
| FR2525383A1 (en) * | 1982-04-16 | 1983-10-21 | Cables De Lyon Geoffroy Delore | DISTRIBUTED CONSTANT RESISTORS FOR HEAVY DUTY MICROWAVE DISSIPATION LOADS |
| SU1550590A1 (en) * | 1988-04-11 | 1990-03-15 | Предприятие П/Я А-1586 | Microstrip load |
| DE3843600C1 (en) * | 1988-12-23 | 1990-03-22 | Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De | High-frequency power terminating impedance |
| JPH07221509A (en) * | 1994-02-01 | 1995-08-18 | Hitachi Ltd | Microwave band terminator |
-
1998
- 1998-06-09 FR FR9807468A patent/FR2779577B1/en not_active Expired - Fee Related
-
1999
- 1999-06-09 AU AU41481/99A patent/AU4148199A/en not_active Abandoned
- 1999-06-09 EP EP99925061A patent/EP1086507B1/en not_active Expired - Lifetime
- 1999-06-09 DE DE69910383T patent/DE69910383D1/en not_active Expired - Lifetime
- 1999-06-09 WO PCT/FR1999/001362 patent/WO1999065104A1/en active IP Right Grant
Non-Patent Citations (1)
| Title |
|---|
| MATTHAEI G.L. ET AL: "Microwave Filters, Impedance matching networks, and coupling structures", 1980, ARTECH HOUSE, DEDHAM * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1086507A1 (en) | 2001-03-28 |
| FR2779577A1 (en) | 1999-12-10 |
| FR2779577B1 (en) | 2001-01-05 |
| DE69910383D1 (en) | 2003-09-18 |
| WO1999065104A1 (en) | 1999-12-16 |
| AU4148199A (en) | 1999-12-30 |
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