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EP0724170A2 - Procédé de fabrication des guides d'ondes nervurées à segments multiples - Google Patents

Procédé de fabrication des guides d'ondes nervurées à segments multiples Download PDF

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Publication number
EP0724170A2
EP0724170A2 EP96101031A EP96101031A EP0724170A2 EP 0724170 A2 EP0724170 A2 EP 0724170A2 EP 96101031 A EP96101031 A EP 96101031A EP 96101031 A EP96101031 A EP 96101031A EP 0724170 A2 EP0724170 A2 EP 0724170A2
Authority
EP
European Patent Office
Prior art keywords
layer
etching
waveguide
semiconductor layer
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96101031A
Other languages
German (de)
English (en)
Other versions
EP0724170A3 (fr
Inventor
Edgar Dr. Kühn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent Deutschland AG
Alcatel Lucent NV
Original Assignee
Alcatel SEL AG
Alcatel NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SEL AG, Alcatel NV filed Critical Alcatel SEL AG
Publication of EP0724170A2 publication Critical patent/EP0724170A2/fr
Publication of EP0724170A3 publication Critical patent/EP0724170A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching

Definitions

  • the invention relates to a method according to the preamble of patent claim 1.
  • segmented optical waveguides can be produced, the segments of which can be electrically controlled via separate metallic contacts or queried for their condition.
  • optical waveguides can e.g. in optical communications technology, as lasers, optical amplifiers, optical modulators, absorbers, wavelength converters or as passive components that transmit light without amplification.
  • FIG. 1 shows a known semiconductor layer sequence, which can serve as a starting product for the production of active and passive optical waveguides.
  • Further semiconductor layers have been grown on a substrate S, for example an In P layer, including a layer package AS which contains, for example, an active layer. a further In P layer InP and finally an only about 0.3 ⁇ m thick cover layer DS, which can consist of highly doped In Ga As, for example, and which can be etched by wet chemistry.
  • a segmented optical rib waveguide is to be created on a semiconductor chip containing the layer sequence shown in FIG. 1, in which the individual segments are to be provided with metallic contacts that are separate from one another, the cover layer is removed on both sides of segment transition regions. This can e.g. done by dry etching.
  • FIG. 2 shows a semiconductor chip - for the sake of simplicity only shown as a layer package SP with the overlying cover layer DS - the cover layer of which has two slots, Sch, on both sides of a later segment transition area ST.
  • FIG. 3 shows the same semiconductor chip with an applied contact metallization KM.
  • a metal strip which is only a few .mu.m wide was produced on the chip surface without taking into account the slots present in the cover layer.
  • the figure clearly shows that in the area of the walls of the slots the metallization is interrupted or at least significantly reduced in thickness.
  • the contact metallization can be produced in any known manner, for example by applying a photoresist layer which is exposed through a shadow mask which covers the area of the contact metallization, then developed, vapor-deposited with metal and finally detached again, the metal lying directly on the cover layer is not removed in the area of the strip covered by the shadow mask.
  • FIG. 4 shows the semiconductor chip after etching out a rib structure R below the contact metallization with the aid of a dry chemical etching process, such as e.g. RIE, IBE or RIBE.
  • a dry chemical etching process such as e.g. RIE, IBE or RIBE.
  • the metal coating can serve as a mask in such processes. A special masking step is thus saved.
  • the rib waveguide R is divided into two individually controllable segments SG1, SG2.
  • the area of the segment transition no longer contains metallization. This was achieved in two steps: First, the entire chip, except for the area of the segment transition, was covered with photoresist in the same way as described in connection with FIG. 3, the area of the contact metallization. Then the cover layer still present in the area of the segment transition was etched away by wet chemistry. The metallization in the area of the segment transition was removed by under-etching.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
EP96101031A 1995-01-28 1996-01-25 Procédé de fabrication des guides d'ondes nervurées à segments multiples Withdrawn EP0724170A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19502684A DE19502684A1 (de) 1995-01-28 1995-01-28 Verfahren zur Herstellung von Mehrsegment-Rippenwellenleitern
DE19502684 1995-01-28

Publications (2)

Publication Number Publication Date
EP0724170A2 true EP0724170A2 (fr) 1996-07-31
EP0724170A3 EP0724170A3 (fr) 1997-01-22

Family

ID=7752544

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96101031A Withdrawn EP0724170A3 (fr) 1995-01-28 1996-01-25 Procédé de fabrication des guides d'ondes nervurées à segments multiples

Country Status (5)

Country Link
US (1) US5788856A (fr)
EP (1) EP0724170A3 (fr)
JP (1) JPH08250820A (fr)
CA (1) CA2168172A1 (fr)
DE (1) DE19502684A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100219714B1 (ko) * 1997-02-26 1999-09-01 윤종용 저손실 광능동소자의 제작방법
KR19990035454A (ko) * 1997-10-31 1999-05-15 윤종용 단일 챔버내에서 평면 광 도파로를 제작하는 방법
US6596557B1 (en) * 2000-03-02 2003-07-22 Orchid Lightwave Communications, Inc. Integrated optical devices and methods of making such devices
EP1191373A1 (fr) * 2000-09-20 2002-03-27 Corning Incorporated Méthode de gravure simultanée de guides d'ondes et de rainures d'intersection pour une application de type commutateur matricielle
CN100434952C (zh) * 2006-04-13 2008-11-19 中国科学院半导体研究所 一种适用于台阶结构的自对准掺杂工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0230118A1 (fr) * 1985-12-19 1987-07-29 Bt&D Technologies Limited Structure guide d'ondes en niobate de lithium
US5125065A (en) * 1989-09-01 1992-06-23 Siemens Aktiengesellschaft Integrated optical arrangement having at least one optical waveguide integrated on a substrate of a semiconductor material and the method of manufacture
EP0526023A2 (fr) * 1991-07-10 1993-02-03 Nec Corporation Dispositif optique à guide d'onde en matériau semi-conducteur et son procédé de fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359260A (en) * 1980-06-25 1982-11-16 Bell Telephone Laboratories, Incorporated Optical polarizer
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
US4895615A (en) * 1988-03-09 1990-01-23 Siemens Aktiengesellschaft Monolithic fabrication techniques for front face optoelectronic couplers and/or optical components including ridge structured waveguides
JPH02187705A (ja) * 1989-01-17 1990-07-23 Oki Electric Ind Co Ltd 光導波構造
DE3931588A1 (de) * 1989-09-22 1991-04-04 Standard Elektrik Lorenz Ag Interferometrischer halbleiterlaser
EP0631159A1 (fr) * 1993-06-18 1994-12-28 Siemens Aktiengesellschaft Couplage entre un guide d'ondes optique planaire et une fibre optique de fabrication d'un guide d'ondes approprié

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0230118A1 (fr) * 1985-12-19 1987-07-29 Bt&D Technologies Limited Structure guide d'ondes en niobate de lithium
US5125065A (en) * 1989-09-01 1992-06-23 Siemens Aktiengesellschaft Integrated optical arrangement having at least one optical waveguide integrated on a substrate of a semiconductor material and the method of manufacture
EP0526023A2 (fr) * 1991-07-10 1993-02-03 Nec Corporation Dispositif optique à guide d'onde en matériau semi-conducteur et son procédé de fabrication

Also Published As

Publication number Publication date
DE19502684A1 (de) 1996-08-01
EP0724170A3 (fr) 1997-01-22
CA2168172A1 (fr) 1996-07-29
JPH08250820A (ja) 1996-09-27
US5788856A (en) 1998-08-04

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