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EP0335788A1 - Microwave phase shifter - Google Patents

Microwave phase shifter Download PDF

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Publication number
EP0335788A1
EP0335788A1 EP89400847A EP89400847A EP0335788A1 EP 0335788 A1 EP0335788 A1 EP 0335788A1 EP 89400847 A EP89400847 A EP 89400847A EP 89400847 A EP89400847 A EP 89400847A EP 0335788 A1 EP0335788 A1 EP 0335788A1
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EP
European Patent Office
Prior art keywords
phase
line
shifting
diodes
shifting circuit
Prior art date
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Granted
Application number
EP89400847A
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German (de)
French (fr)
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EP0335788B1 (en
Inventor
Joelle Ariel
Jacques Legendre
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Thales SA
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Thomson CSF SA
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/1007Microstrip transitions to Slotline or finline
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/18Phase-shifters
    • H01P1/185Phase-shifters using a diode or a gas filled discharge tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/19Conjugate devices, i.e. devices having at least one port decoupled from one other port of the junction type
    • H01P5/20Magic-T junctions

Definitions

  • the invention relates to microwave phase shifting circuits and, more particularly, microwave phase shifting circuits which perform elementary phase shifts under the control of electrical signals and which can be grouped to obtain phase shifts which are integral multiples of the elementary phase shifts.
  • microwave propagation lines are used which can take different forms and FIGS. 1 to 4 are respectively views which respectively represent a slotted propagation line and a ribbon propagation line better known by the name of microstrip line.
  • a slotted line ( Figures 1 and 2) consists of an opening 1 made in a metal layer 2 deposited on a dielectric substrate 3.
  • the dielectric support provides the mechanical strength of the metal conductors and constitutes the medium for propagation of the microwave wave. whose energy is concentrated between the edges 4 and 5 of the slit.
  • lines of force of the electric field E have been shown in dotted lines and those of the magnetic field in solid lines.
  • the thickness of the dielectric material is related to its nature and the width of the slotted line determines the characteristic impedance of the line.
  • the ribbon propagation line (FIGS. 3 and 4) comprises a dielectric plate 7 disposed between a ribbon 6 and a metallic plane 8 also called the ground plane. As with the slotted line in Figures 1 and 2, almost all of the energy is concentrated in the dielectric 7. In FIG. 4, the lines of force of the electric field E have been shown in dotted lines.
  • the dielectric material used in the two slit or ribbon lines can be polytetrafluoroethylene, beryllium oxide, aluminum ceramic, quartz or ferrite.
  • the slit or ribbon lines can separately perform a phase shift function by configuring them in different ways.
  • the slit or ribbon lines can separately perform a phase shift function by configuring them in different ways.
  • phase shifters of the prior art whether they are of the slotted line or ribbon line type, reference may be made to numerous articles in the review IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES and in particular an article by Elio A MARIANI and others - Vol MTT-l7 n ° 12 - December 1969 pages 1091 to 1096 entitled “Slot Line Characteristics” as well as an article by JF WHITE March 1965 pages 232 to 242 entitled "High Power, pin Diode Controlled Microwave Transmission Phase Shifters ".
  • An object of the present invention is therefore to achieve, in the same structure, a change of propagation line and a controlled phase shift of the incident wave, which leads to a reduction in losses and bulk.
  • the invention relates to a microwave phase shifting circuit characterized in that it comprises: - a substrate of dielectric material, one of the faces of which has a slotted line while the other side of which has a ribbon line in the form of a candlestick with two parallel branches connected by a transverse arm perpendicular to the direction of the slit line , the lengths of the branches of the candlestick being different from b / 4 if b is the wavelength of the microwave signals.
  • Figures 1 to 4 have been described succinctly in the preamble to define the field of the invention, that is to say that of slit and ribbon lines.
  • FIG 5 is a perspective view which schematically shows a microwave phase shifting circuit which comprises a substrate 10 of dielectric material similar to that bearing the reference 3 or 7 in Figures 2 and 4.
  • the underside of the substrate 10 is covered with 'a metal layer 11 in which is made a straight slot 12 of a certain width d, for example by chemical action, so as to produce a slot line of the type described in relation to Figures 1 and 2.
  • This slot 12 does not extend over the entire length of the substrate and ends at one end 40 with a short circuit constituted by the metal layer 11.
  • the other end 41 of the slotted line is open.
  • the upper face 14 of the substrate 10 comprises a strip 15 called a microstrip, having a particular shape. It comprises a central arm 16 and two lateral arms 17 and 18 which are connected to the central arm 16 by a transverse arm 23, the set of arms providing a structure in the form of a candlestick with two branches of unequal length.
  • the arm 17, for example, has a length which is b / 4 greater than that of the arm 18 for reasons which will be explained below, b being the wavelength of the microwave signals transmitted by the line.
  • the ends 19 and 20 of the arms 17 and 18 are each connected to the cathode of a PIN diode 21 and 22, the anode of which is connected to ground.
  • These diodes 21 and 22 have been shown in their electrical form, but it can be understood that in practice they are in the form of a component which is wired to the substrate 10 by connecting the output terminals, one at the end of a branch 17 or 18 and the other at ground potential.
  • diodes 21 and 22 are biased by conventional type bias circuits which include, for the diode 22 for example, a shock coil 30 and a decoupling capacitor 31 for the cathode of the diode and a shock coil 32 and a decoupling capacitor 33 for the anode of the diode.
  • the bias voltage Vp is applied between points 34 and 35 of the bias circuits.
  • the diodes 21 and 22 are shown connected in a certain direction between the end of the branch and the ground potential. Of course, they can be connected in the other direction, the important thing being that they can be conductive or blocked according to the bias voltage Vp which is applied to them.
  • the positions of the slit line 12 and the ribbon line must be such that the slit line is aligned with the central arm 16 and its end 30 terminates under the arm 16 so as to obtain the best possible coupling. Furthermore, the lengths of the transverse arm 23 on either side of the central arm 16 are equal.
  • the arms 16, 17 and 18 produce a power divider for the incident wave transmitted by line 16 like a magic tee. It is known that in a magic tee (FIG. 6), the incident wave 25 at the input 26 is divided into two waves of amplitudes A and equal phases ⁇ on the channels 27 and 28, the channel 29 being decoupled. It is also known (FIG. 7) that two waves of the same amplitude A but in phase opposition which are applied to the channels 27 and 28 combine in phase on the channel 29, the channel 26 being decoupled.
  • FIG. 5 shows the directions of the electric fields e1 and e2 in the substrate 10 under the transverse arm 23 and the electric field e3 resulting from their combination in the slotted line 12.
  • the operation of the phase shifting circuit has been described for a certain direction of propagation - ribbon line to slotted line - but it is clear that the circuit phase shifter also works in the other direction of propagation - slotted line to substrate.
  • the variation of the phase shift between the wave entering by the strip line 16 and the wave leaving by the slit line 12 depends on the variation in impedance presented by the diodes 21 and 22 depending on whether they are simultaneously blocked or conductive, their state depending on the bias voltage Vp applied to them. It should be noted that there is a certain phase shift between the input and output waves for a certain state of the diodes and that this phase shift is modified when the diodes pass into the other state so that this results in a variation. of the phase shift between the two successive states of the diodes.
  • phase shifting circuits which introduce elementary phase shifts of 22.5 ° 45 ° or 90 ° in frequency bands of 10%.
  • each elementary phase shift is obtained by making the diodes 21 and 22 simultaneously conducting or blocked.
  • phase-shifting circuits of a group can be assembled in various ways and one of them consists in using the same substrate on which the different slit line / ribbon line transitions are made.
  • the coupling between the adjacent phase-shifting circuits can be achieved in various ways, by for example a line to slot / line to line coupling, or a line to tape / line to line coupling, or even a line to slot / line to line coupling and vice versa.

Landscapes

  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

The phase-shifter circuit is constructed with the aid of strip lines (16, 17 and 18) arranged in candlestick form on one face (14) of a substrate (10) and of a slotted line (12) which is disposed on the other face (13). The lengths of the branches (17 and 18) of the candlestick differ by b/4, b being the wavelength, and the ends (19, 20) of the said branches are short-circuited, or not, by PIN diodes (21, 22) which may be forward or reverse biased. The invention is applicable to radars. <IMAGE>

Description

L'invention concerne les circuits déphaseurs hyperfréquence et, plus particulièrement, les circuits déphaseurs hyperfréquence qui réalisent des déphasages élémentaires sous la commande de signaux électriques et qui peuvent être groupés pour obtenir des déphasages qui sont des multiples entiers des déphasages élémentaires. En hyperfréquence, on utilise des lignes de propagation qui peuvent prendre différentes formes et les figures 1 à 4 sont respectivement des vues qui représentent respectivement une ligne de propagation à fente et une ligne de propagation à ruban plus connue sous le nom de ligne microstrip.The invention relates to microwave phase shifting circuits and, more particularly, microwave phase shifting circuits which perform elementary phase shifts under the control of electrical signals and which can be grouped to obtain phase shifts which are integral multiples of the elementary phase shifts. In microwave, propagation lines are used which can take different forms and FIGS. 1 to 4 are respectively views which respectively represent a slotted propagation line and a ribbon propagation line better known by the name of microstrip line.

Une ligne à fente(figures 1 et 2) est constituée par une ouverture 1 pratiquée dans une couche métallique 2 déposée sur un substrat diélectrique 3. Le support diélectrique assure la tenue mécanique des conducteurs métalliques et constitue le milieu de propagation de l'onde hyperfréquence dont l'énergie se trouve concentrée entre les bords 4 et 5 de la fente. Sur la figure 2, des lignes de force du champ électrique E ont été représentées en pointillés et celles du champ magnétique en traits pleins. L'épaisseur du matériau diélectrique est liée à sa nature et la largeur de la ligne à fente détermine l'impédance caractéristique de la ligne.A slotted line (Figures 1 and 2) consists of an opening 1 made in a metal layer 2 deposited on a dielectric substrate 3. The dielectric support provides the mechanical strength of the metal conductors and constitutes the medium for propagation of the microwave wave. whose energy is concentrated between the edges 4 and 5 of the slit. In FIG. 2, lines of force of the electric field E have been shown in dotted lines and those of the magnetic field in solid lines. The thickness of the dielectric material is related to its nature and the width of the slotted line determines the characteristic impedance of the line.

La ligne de propagation à ruban (figures 3 et 4) comporte une plaque diélectrique 7 disposée entre un ruban 6 et un plan métallique 8 appelé également plan de masse. Comme pour la ligne à fente des figures 1 et 2, la presque totalité de l'énergie est concentrée dans le diélectrique 7. Sur la figure 4, les lignes de force du champ électrique E ont été représentées en pointillés. Le matériau diélectrique utilisé dans les deux lignes à fente ou à ruban peut être un polytétrafluoréthylène, un oxyde de béryllium, une céramique d'aluminium, un quartz ou un ferrite.The ribbon propagation line (FIGS. 3 and 4) comprises a dielectric plate 7 disposed between a ribbon 6 and a metallic plane 8 also called the ground plane. As with the slotted line in Figures 1 and 2, almost all of the energy is concentrated in the dielectric 7. In FIG. 4, the lines of force of the electric field E have been shown in dotted lines. The dielectric material used in the two slit or ribbon lines can be polytetrafluoroethylene, beryllium oxide, aluminum ceramic, quartz or ferrite.

Outre une fonction de propagation, les lignes à fente ou à ruban peuvent réaliser séparément une fonction de déphasage en les configurant de différentes manières. C'est ainsi qu'en mettant en oeuvre une technologie du type ligne à ruban, on peut réaliser les déphaseurs dits à commutation de ligne, à perturbations, ou à coupleurs 3 db/90°.In addition to a propagation function, the slit or ribbon lines can separately perform a phase shift function by configuring them in different ways. Thus, by implementing a technology of the ribbon line type, it is possible to produce the so-called line switching, disturbance phase shifters or with 3 db / 90 ° couplers.

Pour une description de ces déphaseurs de l'art antérieur, qu'ils soient du type à ligne à fente ou ligne à ruban, on peut se reporter à de nombreux articles dans la revue IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES et notamment un article de Elio A MARIANI et autres - Vol MTT-l7 n° 12 - décembre 1969 pages 1091 à 1096 intitulé "Slot Line Characteristics" ainsi qu'un article de J.F. WHITE Mars 1965 pages 232 à 242 intitulé "High Power, p-i-n Diode Controlled Microwave Transmission Phase Shifters".For a description of these phase shifters of the prior art, whether they are of the slotted line or ribbon line type, reference may be made to numerous articles in the review IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES and in particular an article by Elio A MARIANI and others - Vol MTT-l7 n ° 12 - December 1969 pages 1091 to 1096 entitled "Slot Line Characteristics" as well as an article by JF WHITE March 1965 pages 232 to 242 entitled "High Power, pin Diode Controlled Microwave Transmission Phase Shifters ".

Dans certaines applications, il est nécessaire de passer d'un type de ligne à un autre et il a été proposé, à cet effet, de nombreux dispositifs de couplage. Ces dispositifs de couplage ne sont en général pas prévus pour réaliser en même temps un circuit déphaseur dont la valeur du déphasage serait contrôlée. Lorsqu'un déphasage déterminé doit être introduit, le montage est modifié pour insérer un circuit déphaseur de tout type connu avant ou après le dispositif de couplage, ce qui augmente les pertes, complique le montage et le rend plus volumineux.In certain applications, it is necessary to switch from one type of line to another, and numerous coupling devices have been proposed for this purpose. These coupling devices are generally not intended to simultaneously produce a phase shifting circuit whose value of the phase shift would be controlled. When a determined phase shift must be introduced, the circuit is modified to insert a phase shift circuit of any known type before or after the coupling device, which increases the losses, complicates the circuit and makes it more voluminous.

Il existe donc un besoin pour des dispositifs de couplage à déphaseur incorporé ou inversement pour des dispositifs déphaseurs incorporés dans des dispositifs de couplage.There is therefore a need for coupling devices with incorporated phase shifter or vice versa for phase shifting devices incorporated in coupling devices.

Un but de la présente invention est donc de réaliser dans une même structure un changement de ligne de propagation et un déphasage contrôlé de l'onde incidente, ce qui entraîne une réduction des pertes et de l'encombrement.An object of the present invention is therefore to achieve, in the same structure, a change of propagation line and a controlled phase shift of the incident wave, which leads to a reduction in losses and bulk.

L'invention se rapporte à un circuit déphaseur hyperfréquence caractérisé en ce qu'il comprend :
- un substrat en matériau diélectrique dont l'une des faces comporte une ligne à fente tandis que l'autre face comporte une ligne à ruban en forme de chandelier à deux branches parallèles reliées par un bras transversal perpendiculaire à la direction de la ligne à fente, les longueurs des branches du chandelier étant différentes de b/4 si b est la longueur d'onde des signaux hyperfréquence.
- deux diodes PIN connectées chacune entre l'extrémité d'une branche et le potentiel de la masse,
- des moyens pour rendre les diodes PIN simultanément passantes ou bloquées de manière à introduire une variation d'impédance identique dans chaque branche et obtenir ainsi une variation de phase déterminée entre l'onde d'entrée appliquée sur une ligne et l'onde de sortie apparaissant sur l'autre ligne, au moment du changement d'état desdites diodes.
The invention relates to a microwave phase shifting circuit characterized in that it comprises:
- a substrate of dielectric material, one of the faces of which has a slotted line while the other side of which has a ribbon line in the form of a candlestick with two parallel branches connected by a transverse arm perpendicular to the direction of the slit line , the lengths of the branches of the candlestick being different from b / 4 if b is the wavelength of the microwave signals.
- two PIN diodes each connected between the end of a branch and the ground potential,
- Means for making the PIN diodes simultaneously passing or blocked so as to introduce an identical impedance variation in each branch and thus obtaining a determined phase variation between the input wave applied to a line and the output wave appearing on the other line, when the state of said diodes changes.

D'autres caractéristiques et avantages de la présente invention apparaîtront à la lecture de la description suivante d'un exemple particulier de réalisation, ladite description étant faite en relation avec les dessins joints dans lesquels

  • - la figure 1 est une vue de dessus d'une ligne à fente ;
  • - la figure 2 est une vue en coupe de la ligne à fente suivant la ligne II-II de la figure 1 ;
  • - la figure 3 est une vue de dessus d'une ligne à ruban ou ligne microstrip ;
  • - la figure 4 est une vue en coupe de la ligne à ruban suivant la ligne IV-IV de la figure 3 ;
  • - la figure 5 est une vue en perspective cavalière d'un circuit déphaseur hyperfréquence selon l'invention, et
  • - les figures 6,7 et 8 sont des schémas qui permettent de comprendre le fonctionnement du circuit déphaseur hyperfréquence selon l'invention.
Other characteristics and advantages of the present invention will appear on reading the following description of a particular embodiment, said description being made in relation to the accompanying drawings in which
  • - Figure 1 is a top view of a line to slit;
  • - Figure 2 is a sectional view of the slotted line along line II-II of Figure 1;
  • - Figure 3 is a top view of a ribbon line or microstrip line;
  • - Figure 4 is a sectional view of the ribbon line along line IV-IV of Figure 3;
  • FIG. 5 is a perspective view of a microwave phase shifting circuit according to the invention, and
  • - Figures 6,7 and 8 are diagrams which allow to understand the operation of the microwave phase shifting circuit according to the invention.

Les figures 1 à 4 ont été décrites succinctement dans le préambule pour définir le domaine de l'invention, c'est-à-dire celui des lignes à fente et à ruban.Figures 1 to 4 have been described succinctly in the preamble to define the field of the invention, that is to say that of slit and ribbon lines.

La figure 5 est une vue en perspective qui montre de manière schématique un circuit déphaseur hyperfréquence qui comprend un substrat 10 en matériau diélectrique analogue à celui portant la référence 3 ou 7 sur les figures 2 et 4. La face inférieure du substrat 10 est recouverte d'une couche métallique 11 dans laquelle est pratiquée une fente 12 rectiligne d'une certaine largeur d, par exemple par action chimique, de manière à réaliser une ligne à fente du type de celle décrite en relation avec les figures 1 et 2. Cette fente 12 ne s'étend pas sur toute la longueur du substrat et se termine à une extrémité 40 par un court-circuit constitué par la couche métallique 11. L'autre extrémité 41 de la ligne à fente est ouverte.Figure 5 is a perspective view which schematically shows a microwave phase shifting circuit which comprises a substrate 10 of dielectric material similar to that bearing the reference 3 or 7 in Figures 2 and 4. The underside of the substrate 10 is covered with 'a metal layer 11 in which is made a straight slot 12 of a certain width d, for example by chemical action, so as to produce a slot line of the type described in relation to Figures 1 and 2. This slot 12 does not extend over the entire length of the substrate and ends at one end 40 with a short circuit constituted by the metal layer 11. The other end 41 of the slotted line is open.

La face supérieure 14 du substrat 10 comporte un ruban 15 appelé microstrip, ayant une forme particulière. Il comprend un bras central 16 et deux bras latéraux 17 et 18 qui sont connectés au bras central 16 par un bras transversal 23, l'ensemble des bras réalisant une structure ayant la forme d'un chandelier à deux branches de longueurs inégales. Le bras 17, par exemple, a une longueur qui est supérieure de b/4 à celle du bras 18 pour des raisons qui seront expliquées ci-après, b étant la longueur d'onde des signaux hyperfréquence transmis par la ligne.The upper face 14 of the substrate 10 comprises a strip 15 called a microstrip, having a particular shape. It comprises a central arm 16 and two lateral arms 17 and 18 which are connected to the central arm 16 by a transverse arm 23, the set of arms providing a structure in the form of a candlestick with two branches of unequal length. The arm 17, for example, has a length which is b / 4 greater than that of the arm 18 for reasons which will be explained below, b being the wavelength of the microwave signals transmitted by the line.

Les extrémités 19 et 20 des bras 17 et 18 sont connectées chacune à la cathode d'une diode PIN 21 et 22 dont l'anode est connectée à la masse. Ces diodes 21 et 22 ont été représentées sous leur forme électrique mais on comprend, qu'en pratique, elles se présentent sous la forme d'un composant que l'on câble sur le substrat 10 en connectant les bornes de sortie, l'une à l'extrémité d'une branche 17 ou 18 et l'autre au potentiel de la masse.The ends 19 and 20 of the arms 17 and 18 are each connected to the cathode of a PIN diode 21 and 22, the anode of which is connected to ground. These diodes 21 and 22 have been shown in their electrical form, but it can be understood that in practice they are in the form of a component which is wired to the substrate 10 by connecting the output terminals, one at the end of a branch 17 or 18 and the other at ground potential.

Ces diodes 21 et 22 sont polarisées par des circuits de polarisation de type classique qui comprennent, pour la diode 22 par exemple, une bobine de choc 30 et un condensateur de découplage 31 pour la cathode de la diode et une bobine de choc 32 et un condensateur de découplage 33 pour l'anode de la diode. La tension de polarisation Vp est appliquée entre les points 34 et 35 des circuits de polarisation.These diodes 21 and 22 are biased by conventional type bias circuits which include, for the diode 22 for example, a shock coil 30 and a decoupling capacitor 31 for the cathode of the diode and a shock coil 32 and a decoupling capacitor 33 for the anode of the diode. The bias voltage Vp is applied between points 34 and 35 of the bias circuits.

Sur la figure 5, on a représenté les diodes 21 et 22 connectées dans un certain sens entre l'extrémité de la branche et le potentiel de la masse. Bien entendu, elles peuvent être connectées dans l'autre sens, l'important étant qu'elles puissent être conductrices ou bloquées selon la tension de polarisation Vp qui leur est appliquée.In FIG. 5, the diodes 21 and 22 are shown connected in a certain direction between the end of the branch and the ground potential. Of course, they can be connected in the other direction, the important thing being that they can be conductive or blocked according to the bias voltage Vp which is applied to them.

Les positions de la ligne à fente 12 et de la ligne à ruban doivent être telles que la ligne à fente soit alignée avec le bras central 16 et que son extrémité 30 aboutisse sous le bras 16 de manière à obtenir le meilleur couplage possible. Par ailleurs les longueurs du bras transversal 23 de part et d'autre du bras central 16 sont égales.The positions of the slit line 12 and the ribbon line must be such that the slit line is aligned with the central arm 16 and its end 30 terminates under the arm 16 so as to obtain the best possible coupling. Furthermore, the lengths of the transverse arm 23 on either side of the central arm 16 are equal.

Le fonctionnement du circuit déphaseur hyperfréquence qui vient d'être décrit en relation avec la figure 5 sera maintenant expliqué à l'aide des figures 6, 7 et 8. Les bras 16, 17 et 18 réalisent un diviseur de puissance pour l'onde incidente transmise par la ligne 16 à la manière d'un Té magique. Il est connu que dans un Té magique (figure 6), l'onde incidente 25 à l'entrée 26 se partage en deux ondes d'amplitudes A et phases φ égales sur les voies 27 et 28, la voie 29 étant découplée. Il est également connu (figure 7) que deux ondes de même amplitude A mais en opposition de phase qui sont appliquées sur les voies 27 et 28 se combinent en phase sur la voie 29, la voie 26 étant découplée.The operation of the microwave phase shifting circuit which has just been described in relation to FIG. 5 will now be explained with the aid of FIGS. 6, 7 and 8. The arms 16, 17 and 18 produce a power divider for the incident wave transmitted by line 16 like a magic tee. It is known that in a magic tee (FIG. 6), the incident wave 25 at the input 26 is divided into two waves of amplitudes A and equal phases φ on the channels 27 and 28, the channel 29 being decoupled. It is also known (FIG. 7) that two waves of the same amplitude A but in phase opposition which are applied to the channels 27 and 28 combine in phase on the channel 29, the channel 26 being decoupled.

Dans le cas du circuit déphaseur de la figure 5, par suite du bras 17, qui a une longueur supérieure de b/4 à la longueur du bras 18 (figure 8), l'onde incidente en 16, après partage dans les deux bras latéraux, est réfléchie par les extrémités 19 et 20 desdits bras mais les ondes réfléchies ont une différence de phase de 180° due à une différence de longueur des trajets égale à b/2. Il en résulte qu'elles ne peuvent pas sortir par l'entrée 16 mais par la ligne à fente 12, le couplage avec cette dernière étant réalisé par l'intermédiaire du bras transversal 23.In the case of the phase shifting circuit of FIG. 5, as a result of the arm 17, which has a length greater by b / 4 than the length of the arm 18 (FIG. 8), the incident wave at 16, after sharing in the two arms lateral, is reflected by the ends 19 and 20 of said arms but the waves reflected have a phase difference of 180 ° due to a difference in length of the paths equal to b / 2. As a result, they cannot exit through the inlet 16 but through the slotted line 12, the coupling with the latter being carried out by means of the transverse arm 23.

A titre illustratif, on a représenté sur la figure 5 les sens des champs électriques e1 et e2 dans le substrat 10 sous le bras transversal 23 et le champ électrique e3 résultant de leur combinaison dans la ligne à fente 12. Le fonctionnement du circuit déphaseur a été décrit pour un certain sens de propagation - ligne à ruban vers ligne à fente - mais il est clair que le circuit déphaseur fonctionne également dans l'autre sens de propagation - ligne à fente vers substrat.By way of illustration, FIG. 5 shows the directions of the electric fields e1 and e2 in the substrate 10 under the transverse arm 23 and the electric field e3 resulting from their combination in the slotted line 12. The operation of the phase shifting circuit has been described for a certain direction of propagation - ribbon line to slotted line - but it is clear that the circuit phase shifter also works in the other direction of propagation - slotted line to substrate.

La variation du déphasage entre l'onde entrant par la ligne à ruban 16 et l'onde sortant par la ligne à fente 12 dépend de la variation d'impédance présentée par les diodes 21 et 22 selon qu'elles sont simultanément bloquées ou conductrices, leur état dépendant de la tension de polarisation Vp qui leur est appliquée. Il est à remarquer qu'il existe un certain déphasage entre les ondes d'entrée et de sortie pour un certain état des diodes et que ce déphasage est modifié lorsque les diodes passent dans l'autre état de sorte qu'il en résulte une variation du déphasage entre les deux états successifs des diodes.The variation of the phase shift between the wave entering by the strip line 16 and the wave leaving by the slit line 12 depends on the variation in impedance presented by the diodes 21 and 22 depending on whether they are simultaneously blocked or conductive, their state depending on the bias voltage Vp applied to them. It should be noted that there is a certain phase shift between the input and output waves for a certain state of the diodes and that this phase shift is modified when the diodes pass into the other state so that this results in a variation. of the phase shift between the two successive states of the diodes.

De manière plus précise, la variation du déphasage à obtenir est calculée en fonction de l'impédance de ligne, de la longueur de la ligne et de la capacité de la diode, les calculs étant effectués conformément à l'art antérieur connu tel que celui cité dans le préambule. On peut ainsi réaliser des circuits déphaseurs qui introduisent des déphasages élémentaires de 22,5° 45° ou 90° dans des bandes de fréquence de 10 %.More precisely, the variation in the phase shift to be obtained is calculated as a function of the line impedance, the length of the line and the capacity of the diode, the calculations being carried out in accordance with known prior art such as that cited in the preamble. It is thus possible to produce phase shifting circuits which introduce elementary phase shifts of 22.5 ° 45 ° or 90 ° in frequency bands of 10%.

Par ailleurs, ces circuits déphaseurs élémentaires peuvent être assemblés pour réaliser différentes combinaisons des déphasages élémentaires. Chaque déphasage élémentaire est obtenu en rendant les diodes 21 et 22 simultanément passantes ou bloquées.Furthermore, these elementary phase shift circuits can be assembled to make different combinations of elementary phase shifts. Each elementary phase shift is obtained by making the diodes 21 and 22 simultaneously conducting or blocked.

Les circuits déphaseurs d'un groupe peuvent être assemblés de diverses manières et l'une d'entre elles consiste à utiliser un même substrat sur lequel sont réalisés les différentes transitions ligne à fente/ligne à ruban. Le couplage entre les circuits déphaseurs adjacents peut être réalisé de diverses façons, par exemple un couplage ligne à fente/ligne à fente, ou un couplage ligne à ruban/ligne à ruban , ou encore un couplage ligne à fente/ligne à ruban et vice versa.The phase-shifting circuits of a group can be assembled in various ways and one of them consists in using the same substrate on which the different slit line / ribbon line transitions are made. The coupling between the adjacent phase-shifting circuits can be achieved in various ways, by for example a line to slot / line to line coupling, or a line to tape / line to line coupling, or even a line to slot / line to line coupling and vice versa.

Claims (6)

1. Circuit déphaseur hyperfréquence du type comportant une jonction hybride dont deux accès sont reliés à la masse par l'intermédiaire de diodes semiconductrices situées à des distances différant de b/4, où b est la longueur d'onde des signaux hyperfréquence, caractérisé en ce que ledit circuit déphaseur comprend :
-un substrat (10) en matériau diélectrique dont l'une des faces comporte une ligne à fente (12) tandis que l'autre face comporte une ligne à ruban (16, 17, 18) en forme de chandelier à deux branches parallèles (17, 18) reliées par un bras transversal (23) perpendiculaire à la direction de la ligne à fente (12), les longueurs des branches du chandelier étant différentes de b/4 si b est la longueur d'onde des signaux hyperfréquence ;
-deux diodes PIN (21, 22) connectées chacune entre l'extrémité (19 ou 20) d'une branche (17 ou 18) et la masse ; et
-des moyens pour rendre les diodes PIN (21, 22) simultanément passantes ou bloquées de manière à introduire une variation d'impédance identique dans chaque branche et obtenir ainsi une variation de phase déterminée entre l'onde d'entrée appliquée sur une ligne et l'onde de sortie apparaissant sur l'autre ligne au moment du changement d'état desdites diodes.
1. Microwave phase shifter circuit of the type comprising a hybrid junction, two accesses of which are connected to ground via semiconductor diodes located at distances differing from b / 4, where b is the wavelength of the microwave signals, characterized in what said phase shifting circuit comprises:
a substrate (10) of dielectric material, one of the faces of which has a slotted line (12) while the other side of which has a strip line (16, 17, 18) in the form of a candlestick with two parallel branches ( 17, 18) connected by a transverse arm (23) perpendicular to the direction of the slit line (12), the lengths of the branches of the candlestick being different from b / 4 if b is the wavelength of the microwave signals;
-two PIN diodes (21, 22) each connected between the end (19 or 20) of a branch (17 or 18) and the ground; and
means for making the PIN diodes (21, 22) simultaneously on or blocked so as to introduce an identical variation in impedance in each branch and thus obtain a determined phase variation between the input wave applied to a line and the output wave appearing on the other line when the state of said diodes changes.
2. Circuit déphaseur, caractérisé en ce qu'il comprend plusieurs circuits déphaseurs selon la revendication 1 disposés en série, chaque circuit déphaseur étant prévu pour introduire une variation de phase déterminée lors du changement d'état desdites diodes.2. phase-shifting circuit, characterized in that it comprises several phase-shifting circuits according to claim 1 arranged in series, each phase-shifting circuit being designed to introduce a determined phase variation when the state of said diodes changes. 3. Circuit déphaseur selon la revendication 2, caractérisé en ce que lesdits circuits déphaseurs sont réalisés sur un même substrat.3. phase-shifting circuit according to claim 2, characterized in that said phase-shifting circuits are produced on the same substrate. 4. Circuit selon la revendication 3, caractérisé en ce que deux circuits déphaseurs adjacents sont couplés par l'intermédiaire de leur ligne à fente (12).4. Circuit according to claim 3, characterized in that two adjacent phase-shifting circuits are coupled via their slotted line (12). 5. Circuit déphaseur selon la revendication 3, caractérisé en ce que deux circuits déphaseurs adjacents sont couplés par l'intermédiaire de leur ligne à ruban (16).5. phase-shifting circuit according to claim 3, characterized in that two adjacent phase-shifting circuits are coupled via their ribbon line (16). 6. Circuit déphaseur selon la revendication 3, caractérisé en ce que deux circuits déphaseurs adjacents sont couplés par une transition ligne à fente/ligne à ruban ou vice versa.6. phase-shifting circuit according to claim 3, characterized in that two adjacent phase-shifting circuits are coupled by a slit line / ribbon line transition or vice versa.
EP89400847A 1988-04-01 1989-03-24 Microwave phase shifter Expired - Lifetime EP0335788B1 (en)

Applications Claiming Priority (2)

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FR8804388 1988-04-01
FR8804388A FR2629641B1 (en) 1988-04-01 1988-04-01 HYPERFREQUENCY PHASE CIRCUIT

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EP0335788A1 true EP0335788A1 (en) 1989-10-04
EP0335788B1 EP0335788B1 (en) 1994-07-20

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AU616612B2 (en) * 1989-09-15 1991-10-31 Hughes Aircraft Company Planar airstripline-stripline magic-tee
AU625204B2 (en) * 1989-05-19 1992-07-02 Siemens Aktiengesellschaft Endless phase shifter
US6411181B1 (en) 1999-02-23 2002-06-25 Murata Manufacturing Co., Ltd. Dielectric resonator, inductor, capacitor, dielectric filter, oscillator, and communication device
CN101393261B (en) * 2008-10-30 2012-01-11 西安华腾微波有限责任公司 Protection circuit for X waveband radar receiver

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US5337027A (en) * 1992-12-18 1994-08-09 General Electric Company Microwave HDI phase shifter
GB2325786B (en) * 1997-05-22 2001-08-15 Nec Technologies Phase switch
FR2811141B1 (en) * 2000-06-29 2002-09-20 Thomson Multimedia Sa T-CIRCUIT REALIZED IN MICRO-TAPE TECHNOLOGY WITH PHASE ELEMENT
KR102409913B1 (en) 2017-12-06 2022-06-16 삼성전자주식회사 Solder reflow apparatus and method of manufacturing an electronic device

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AU625204B2 (en) * 1989-05-19 1992-07-02 Siemens Aktiengesellschaft Endless phase shifter
AU616612B2 (en) * 1989-09-15 1991-10-31 Hughes Aircraft Company Planar airstripline-stripline magic-tee
US6411181B1 (en) 1999-02-23 2002-06-25 Murata Manufacturing Co., Ltd. Dielectric resonator, inductor, capacitor, dielectric filter, oscillator, and communication device
CN101393261B (en) * 2008-10-30 2012-01-11 西安华腾微波有限责任公司 Protection circuit for X waveband radar receiver

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US4967172A (en) 1990-10-30
FR2629641A1 (en) 1989-10-06
EP0335788B1 (en) 1994-07-20
FR2629641B1 (en) 1990-03-23
DE68916829D1 (en) 1994-08-25
DE68916829T2 (en) 1995-01-12

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