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EP0290692A1 - Heizapparat für Halbleiter-Wafer - Google Patents

Heizapparat für Halbleiter-Wafer Download PDF

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Publication number
EP0290692A1
EP0290692A1 EP87304297A EP87304297A EP0290692A1 EP 0290692 A1 EP0290692 A1 EP 0290692A1 EP 87304297 A EP87304297 A EP 87304297A EP 87304297 A EP87304297 A EP 87304297A EP 0290692 A1 EP0290692 A1 EP 0290692A1
Authority
EP
European Patent Office
Prior art keywords
lamps
group
wafer
groups
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP87304297A
Other languages
English (en)
French (fr)
Other versions
EP0290692B1 (de
Inventor
Anita S. Gat
Eugene R. Westerberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AG Processing Technologies Inc
Original Assignee
AG Processing Technologies Inc
AG Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US06/760,160 priority Critical patent/US4680451A/en
Application filed by AG Processing Technologies Inc, AG Associates Inc filed Critical AG Processing Technologies Inc
Priority to DE19873787367 priority patent/DE3787367T2/de
Priority to EP19870304297 priority patent/EP0290692B1/de
Publication of EP0290692A1 publication Critical patent/EP0290692A1/de
Application granted granted Critical
Publication of EP0290692B1 publication Critical patent/EP0290692B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0093—Maintaining a temperature gradient

Definitions

  • This invention relates generally to apparatus for heating semiconductor wafers.
  • High intensity lamp heaters are now available for heat treating semiconductor wafers.
  • the Heat-Pulse TM system manufactures and sold by AG Associates, Palo Alto, California permits fast ramping of temperatures to 1100°C, and the maintenance of this temperature for a period of 10 seconds or so for the rapid annealing of ion implanted semiconductor wafers. The temperature is then quickly lowered thereby minimizing the movement of dopant ions in the crystal lattice structure.
  • the same apparatus could be used for phosphorous doped oxide reflow, metal silicide formation, annealing, and other semiconductor applications.
  • uniformity of heating is important to prevent thermally induced stresses and resulting slippage in the crystal structure.
  • banks of lamps above and below the wafer all aligned in parallel have been used to heat the wafers.
  • the current in each lamp is controlled to try and maintain some uniformity of temperature with the apparatus.
  • maintenance of uniform temperature has not been possible due to the reradiated heat near the edges of the wafer, thus leding to a temperature gradient near the edges of the wafer.
  • Attempts at overcoming this problem have included use of a supplementary lamp with generally circular configuration which surrounds the wafer in close proximity to the wafer edges.
  • apparatus for heating semiconductor wafers a first plurality of lamps; and comprising a second plurality of lamps, said second plurality of lamps being spaced from said first plurality of lamps whereby a semiconductor wafer can be positioned therebetween; characterised by means electrically connecting groups of lamps in said first plurality of lamps and means electrically connecting groups of lamps in said second plurality of lamps; and means electrically interconnecting each group of electrically connected lamps in said first plurality of lamps with a group of electrically connected lamps in said second plurality of lamps whereby the interconnected groups of lamps are simultaneously and equally energized.
  • the invention provides a high temperature lamp heating apparatus which is readily controllable in heating wafers of various diameters, and which minimizes any temperature gradient along the wafer edges.
  • the lamps in each plurality are energized in groups of two or more, with a group in one plurality being interconnected for energization with a group in the other plurality whereby the two groups of lamps can be simultaneously and equally energized.
  • the lamps are so connected to provide a plurality of heating zones extending outwardly.
  • the lamps in each group can have the same position from opposite ends of the plurality of which they are part. Since the groups of lamps are independently controlled, heat near the edge of a wafer can be increased to minimize temperature gradients in the wafer.
  • the electrical power to the lamps can be controlled in accordance with preestablished lamp current for obtaining a desired temperature for a specific size of wafer.
  • sensors can be provided to sense the temperature of the heated wafer and provide feedback for automatically controlling the lamp groups.
  • a desired temperature gradient profile can be established by adjusting the relative power of the groups of lamps through judicious selection of the individual lamps as to power rating.
  • FIG. 1 is an exploded perspective view of one embodiment of heating apparatus in accordance with the invention.
  • a first plurality of elongate lamps shown generally at 30 and numbered 1 - 10 are provided above a wafer 40, and a second plurality of elongate lamps shown generally at 32 and numbered 11 - 20 are provided below the wafer 40.
  • the lamps 1 to 20 may be conventional tungsten halogen lamps.
  • a light reflector 34 is positioned below the plurality of lamps 32, and a light reflector 36 is positioned above the plurality of lamps 30.
  • Two temperature sensors 38 are positioned in reflector 34 for sensing the temperature of the heated wafer 40. Suitable sensors are optical pyrometer thermometers manufactured and sold by I. R. Con, Inc. of Skokie, Illinois.
  • Figure 2 is a side view of the apparatus of Figure 1, and further illustrates the positioning of the wafer 40 between the pluralities of lamps 30 and 32.
  • One of the sensors 38 is positioned beneath the center of the wafer 40 and the other sensor 38 is positioned near the edge of the wafer 40.
  • Figure 3 is a top plan view of the two pluralities of lamps with the wafer 40 positioned therebetween and in alignment with an orthogonal criss-cross arrangement of the lamps of the two pluralities.
  • the lamps in each plurality are paired beginning with the outermost lamps 1, 10 and 11, 20 and working inwardly to the innermost pair of lamps 5, 6 and 15, 16.
  • Corresponding pairs of lamps in the two pluralities are then connected together in parallel for simultaneous and equal energization.
  • the two lamps 3, 8 in the top plurality 30 of lamps are connected with the corresponding pair of lamps 13, 18 of the bottom plurality 32 of lamps with the four lamps being connected in parallel for simultaneous energization by power control unit 42.
  • power through the lamps is controlled by phase modulating a voltage having a constant peak amplitide, or controlling the duty cycle thereof.
  • the voltage applied to the pairs of lamps can be preestablished for each size wafer and for a particular heat treatment. For example, heat treating of a 10cm (four inch) diameter wafer where the temperature is ramped up to 700°C in three seconds, maintained in a steady state for ten seconds, and then ramped down in three seconds can be in accordance with the following table:
  • This loop system using predetermined current for the lamps may provide an annealing temperature of 700°C plus or minus 7°C for the ten second steady state. For other sized wafers and for other temperature annealing patterns the normalized current intensity will vary.
  • FIG. 5 is a functional block diagram of control apparatus in which the sensors 38 are employed. Signals from the temperature sensors 38 are suitably conditioned at 44 and applied through a multiplexer 46 to an analog to digital converter 48. The digital signals from converter 48 are then applied to a microprocessor 50 which is suitably programmed to respond to the sensed temperature and control timers 52 and phase controllers 54 in energizing the pluralities (banks) of lamps 56.
  • This closed system employing the temperature sensors 38 can more readily vary the temperature profiles used in heat treating a wafer. Greater control can be realized by employing more than two temperature sensors.
  • a single center sensor can be employed for dynamically controlling the central group of lamps.
  • the other groups of lamps can have a predetermined offset from the intensity of the central groups with the other groups automatically changing as the central group is changed in intensity.
  • the central sensor can control the central group of lamps, while the temperature differential between the two sensors controls the offset of the outer groups of lamps.
  • the groups of lamps can have different steady state intensities for a give voltage thereby establishing a desired temperature gradient.
  • Each wafer size can be provided with a specific gradient which is not dependent on electronic control.
  • Heating apparatus utilizing high intensity CW lamps as described above can provide accurate control of the temperature in a wafer, and maintian desired temperature gradients therein.
  • Use of the temperature sensors and feedback provides greater versatility in controlling the temperature profiles in heat treating a wafer; otherwise a proper selection of lamps can provide a desired temperature gradient without need for electronic control.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
EP19870304297 1985-07-29 1987-05-14 Heizapparat für Halbleiter-Wafer Expired - Lifetime EP0290692B1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US06/760,160 US4680451A (en) 1985-07-29 1985-07-29 Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers
DE19873787367 DE3787367T2 (de) 1987-05-14 1987-05-14 Heizapparat für Halbleiter-Wafer.
EP19870304297 EP0290692B1 (de) 1987-05-14 1987-05-14 Heizapparat für Halbleiter-Wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19870304297 EP0290692B1 (de) 1987-05-14 1987-05-14 Heizapparat für Halbleiter-Wafer

Publications (2)

Publication Number Publication Date
EP0290692A1 true EP0290692A1 (de) 1988-11-17
EP0290692B1 EP0290692B1 (de) 1993-09-08

Family

ID=8197911

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19870304297 Expired - Lifetime EP0290692B1 (de) 1985-07-29 1987-05-14 Heizapparat für Halbleiter-Wafer

Country Status (2)

Country Link
EP (1) EP0290692B1 (de)
DE (1) DE3787367T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4223133A1 (de) * 1991-07-15 1993-01-21 T Elektronik Gmbh As Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente
US5359693A (en) * 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
FR2794054A1 (fr) * 1999-05-31 2000-12-01 Faure Bertrand Equipements Sa Procede et dispositif d'assemblage par collage d'une matelassure avec une coiffe d'habillage d'un siege

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
EP0119654A1 (de) * 1983-03-18 1984-09-26 Philips Electronics Uk Limited Ofen zur Wärmebehandlung von Halbleiterkörpern
US4493977A (en) * 1982-09-30 1985-01-15 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafers by a light-radiant heating furnace
US4508960A (en) * 1982-08-30 1985-04-02 Ushio Denki Kabushiki Kaisha Light-radiant furnace
US4533820A (en) * 1982-06-25 1985-08-06 Ushio Denki Kabushiki Kaisha Radiant heating apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US4533820A (en) * 1982-06-25 1985-08-06 Ushio Denki Kabushiki Kaisha Radiant heating apparatus
US4508960A (en) * 1982-08-30 1985-04-02 Ushio Denki Kabushiki Kaisha Light-radiant furnace
US4493977A (en) * 1982-09-30 1985-01-15 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafers by a light-radiant heating furnace
EP0119654A1 (de) * 1983-03-18 1984-09-26 Philips Electronics Uk Limited Ofen zur Wärmebehandlung von Halbleiterkörpern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4223133A1 (de) * 1991-07-15 1993-01-21 T Elektronik Gmbh As Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente
US5359693A (en) * 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
FR2794054A1 (fr) * 1999-05-31 2000-12-01 Faure Bertrand Equipements Sa Procede et dispositif d'assemblage par collage d'une matelassure avec une coiffe d'habillage d'un siege

Also Published As

Publication number Publication date
EP0290692B1 (de) 1993-09-08
DE3787367D1 (de) 1993-10-14
DE3787367T2 (de) 1994-04-14

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