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EP0131344A2 - Disposition en matrice pour des EEPROMS - Google Patents

Disposition en matrice pour des EEPROMS Download PDF

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Publication number
EP0131344A2
EP0131344A2 EP84201001A EP84201001A EP0131344A2 EP 0131344 A2 EP0131344 A2 EP 0131344A2 EP 84201001 A EP84201001 A EP 84201001A EP 84201001 A EP84201001 A EP 84201001A EP 0131344 A2 EP0131344 A2 EP 0131344A2
Authority
EP
European Patent Office
Prior art keywords
transistor
cell
binary
writing circuit
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP84201001A
Other languages
German (de)
English (en)
Other versions
EP0131344B1 (fr
EP0131344A3 (en
Inventor
Sheng Fang
Kamesware Kolla Rao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Gloeilampenfabrieken NV
Publication of EP0131344A2 publication Critical patent/EP0131344A2/fr
Publication of EP0131344A3 publication Critical patent/EP0131344A3/en
Application granted granted Critical
Publication of EP0131344B1 publication Critical patent/EP0131344B1/fr
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Definitions

  • the invention relates to large scale integrated circuit memories.
  • a memory system of the EEPROM type including a plurality of sections of rows and columns of memory cells forming a plurality of bytes of memory, each section including a writing circuit, each row in each section including one memory cell for each column in the section, each section including the same number of rows and the same number of columns.
  • a memory system of the EEPROM type in accordance with the invention is characterized in that each of the memory cells in the same row and column location in each section together comprising each byte of memory and selection means for each section selectively connecting each cell of a byte to its associated writing circuit simultaneously, each said writing circuit thereby being enabled to change information in its associated cell from a first state to a second state or vice versa independent of the change another writing circuit may be making in the information stored in its associated cell.
  • each of the memory cells of a byte of memory is connectable to its own writing means separate from the writing means of the other cells of that byte. In this way one cell of a byte can be charged while another is simultaneously discharged.
  • An advantage of the invention is the decreased time it takes to change information in the array.
  • FIG. 1 there is shown therein a first of eight sections of an EEPROM array, each section containing 8192 memory cells arranged in 32 columns and 256 rows.
  • Four floating gate field effect transistors R O OQ MO , R O OQ M31 , R 255 OQ MO , and R 255 OQM 31 of the first section of the EEPROM array are illustrated. These transistors are the memory cell of the first row of the first column, the memory cell of the first row of the 32nd column and the memory cells of the 256th row, first columm and 32nd column all of the first section.
  • the memory cells of the second through 31st column of the first section are not shown for simplification purposes and are designated as the vertically disposed dotted line box marked C1-C30.
  • the second through 255th rows of memory cells of the first section are also not shown for purposes of simplification and are designated as the horizontally disposed dotted line box identified as R1-R254.
  • Each of the memory cells of the first section is associated with two of its own row select conventional field effect transistors identified by the references R O OQ GO , R O OQ DO' R O OQ G31 , ROOQD31, R 255 OQ GO , R 255 OQ DO and R 255 OQ G31 , R 255 0 Q D31 for the four illustrated cells.
  • All the memory cells in a column of the first section are associated with two column select field effect transistors, such as OQ CGO' O Q CDO and OQ CG31 , OQ CD31 for the first and 32nd columns.
  • FIG. 2 it will be understood that there is shown therein identical memory cells as just described for the first section except that Figure 2 shows the memory cells for the eight section of the EEPROM array. Sections two through seven are not shown for simplification purposes, each being identical to sections one and eight. Each section contains one memory cell of each eight cell byte of the array. Thus by selecting the same row and column in each section one can read out or write into all eight cells of the associated byte.
  • each memory cell transistor will be designated as Q M and its associated conventional field effect transistor connected to its gate will be designated Q G for gate select transistor (see Figure 3).
  • the conventional field effect transistor whose source is connected to its associated memory cells drain will be designated Q D for drain select transistor. This disregards row location and column location.
  • the gate select transistor Q G has its drain connected to the column select line and its source connected to the gate of the floating gate memory cell transistor Q M .
  • the drain select transistor Q D of each cell group has its drain connected to a column select line and its source connected to the drain of the memory cell floating gate transistor Q M .
  • the source of reach memory cell transistor Q M is connected to ground.
  • the gates of both the gate select transistor Q G and the drain select transistor Q D in each row in each column is connected to its associated row select line RS.
  • each gate select transistor Q G and each drain select transistor Q D are connected to lines 9 and 8, respectively, of reading and writing circuit RWM through associated column select transistors Q CG and Q CD .
  • Reading and writing circuit RWM for each section comprises a gate column select circuit comprising transistors Q FG , Q TG , Q SG and Q HG and its complementary drain column select circuit including transistors Q FD , Q TD , Q SD and Q HD -All transistors shown in Figure 3 are field effect N-channel devices except for transistors Q FG and Q FD which are P-channel devices. These latter two transistors are arranged in a flipflop circuit and together with transistors Q RG and Q TD provide connections from terminal 20 to lines 8 and 9. As will be described later the flipflop circuit is in a first state to charge an associated memory cell and in a second state to discharge it. Transistors Q SG and Q SD )rovide a second flipflop circuit and these together with ;ransistors Q HG and Q HD provide connections from lines 9 and to ground.
  • FIG. 3 Also shown in Figure 3 is a representative writing neans for one section of the array including an input signal Latch DIL and an output signal latch DOL.
  • the inputs of output signal latch DOL are connected to lines 8 and 9 of reading and writing circuit RWM which is also part of the representative writing means.
  • Output line VDO of the writing neans is connected to one input of a comparison means comprising exclusive OR EO.
  • the input of data input latch DIL is connected to data input line DIN and its output line VDI is connected to the second input of exclusive OR EO.
  • the output of the exclusive OR is connected to an input of switch SW. Another input is connected to line WE.
  • the output from switch SW is connected to terminal 20 of reading and writing circuit RWM.
  • data input latch DIL It will simplify the explanation of the operation of data input latch DIL if it is understood that in accordance with the invention a writing operation is always preceded by a reading operation. This provides that feature of the invention which causes a writing operation to take place only if the data in a memory cell is to be changed.
  • data input latch DIL only needs to be switched if the next input to a cell is different from the last input through the latch.
  • N-channel gate N4 in Figure 4 to turn on which maintains a binary 0 at terminal 51.
  • P-channel gate P3 on and V cc potential (binary 1) stays on line VDI.
  • N-channel gates are identified by the prefix letter N and P-channel gates by the prefix letter P.
  • Data output latch DOL ( Figure 5) provides a binary 1 signal along line VDO when line 8 is at binary 0 and line 9 is at binary 1. It provides a binary 0 signal along line VDO when line 8 is at binary 1 and line 9 is at binary O.
  • gate P5 ( Figure 5) is on and gate N5 is off.
  • V cc potential (binary 1) is applied through gate P5 to line VDO and to gate N7 to turn it on.
  • Gate N8 is on by virtue of the binary 1 on line 9. Therefore, ground potential (binary 0) is applied to gate P6 to turn it on. As a result, V cc potential (binary 1) is maintained on line VDO through gate P6.
  • Exclusive OR EO produces a binary 1 signal if either one but only one of its input lines VDI or VDO carry a binary 1. In all other conditions it provides a binary O for its output line PHI.
  • gate P10 Figure 6
  • gate N14 is on and ground or binary O is applied through it and gate N13 to gate P15 to turn it on which applies a binary 1 along line PHI.
  • binary 1 signals appear along both lines VDI and VDO gates N9 and N10 are both turned on applying binary 0's to gate P10 and P13 to turn them on also.
  • gates P12 and P14 are both turned on to apply binary 1 signals to gates N15 and N16. These both turn on again to apply a binary 0 along line PHI.
  • gate P9 is turned on to apply a binary 1 to gate N11 turning it on.
  • Gate N12 is turned on by the binary 1 along line VDO.
  • FIG. 7 Shown in Figure 7 is the detailed circuitry of switch SW for transferring the voltage applied to terminal 20 of reading and writing circuit RWM from the reading potential V cc to the writing potential V .
  • a signal applied along line WE is inverted by the inverter formed by gates P17 and N17.
  • a binary 1 signal along line WE indicates a reading operation and causes a binary O to be applied along line VPGM.
  • the inverter formed by gates P20 and N20 inverts this to apply a binary 1 along line VPGM. Under these conditions gate P18 is turned on and a binary 1 is applied to gates N21 and N24 turning them on.
  • Gate N21 applies ground to gate P23 turning gate P23 on and gates P22 and P24 off.
  • Gate N24 applies V cc potential (reading voltage) to terminal 20 of reading and writing circuit RWM.
  • a select voltage is applied to the column select line associated with that cell as well as to the row select line associated with that cell thereby addressing or selecting the cell. It is to be understood that the same row select line and column select line is simultaneously selected in each of the eight sections thereby addressing the whole byte. That is the only row select line and column select line so selected in each section and thus only one cell is selected in each section. Assume row zero and column zero to have been so selected, the select voltages (source not shown) cause transistors Q G and Q D together with tran- s istors Q CG and Q CD to turn on.
  • exclusive OR EO of the writing means of each sectionof the array enables the writing voltage to be applied only to the reading and writing circuit RWM associated with a cell where information is to be changed. This prevents such cells from being written into when not necessary.
  • each of the bits of every byte into separate sections enables the writing circuits to write information in a first state into one selected cell containing information in a second state while simultaneously writing information in the second state into another selected cell containing information in said first state.
  • the memory cell in a first bit position of column zero, row zero, namely R OQQMO ( Figure 1) has a binary 1 stored therein while the memory cell in the eighth bit position of column zero, row zero, namely R 0 7Q MO ( Figure 2) has a O stored therein.
  • the former can be changed to a binary 0 during a writing cycle and the latter to a binary 1 simultaneously during the same writing cycle.

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  • Read Only Memory (AREA)
EP84201001A 1983-07-11 1984-07-10 Disposition en matrice pour des EEPROMS Expired EP0131344B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/512,853 US4566080A (en) 1983-07-11 1983-07-11 Byte wide EEPROM with individual write circuits
US512853 1983-07-11

Publications (3)

Publication Number Publication Date
EP0131344A2 true EP0131344A2 (fr) 1985-01-16
EP0131344A3 EP0131344A3 (en) 1987-09-23
EP0131344B1 EP0131344B1 (fr) 1992-01-02

Family

ID=24040860

Family Applications (1)

Application Number Title Priority Date Filing Date
EP84201001A Expired EP0131344B1 (fr) 1983-07-11 1984-07-10 Disposition en matrice pour des EEPROMS

Country Status (6)

Country Link
US (1) US4566080A (fr)
EP (1) EP0131344B1 (fr)
JP (1) JPH0697557B2 (fr)
KR (1) KR920001076B1 (fr)
DE (1) DE3485402D1 (fr)
IE (1) IE57868B1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211069A1 (fr) * 1985-02-11 1987-02-25 Advanced Micro Devices, Inc. Circuit d'ecriture efficace en mode page pour e?2 proms
EP0293339A1 (fr) * 1987-05-27 1988-11-30 STMicroelectronics S.r.l. Dispositif de mémoire permanente supportant un grand nombre de cycles de programmation
EP0332274A2 (fr) * 1988-03-09 1989-09-13 Koninklijke Philips Electronics N.V. EEPROM à mode d'effacement et d'écriture commandé par des données

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03232196A (ja) * 1990-02-07 1991-10-16 Toshiba Corp 半導体記憶装置
JP2971302B2 (ja) * 1993-06-30 1999-11-02 シャープ株式会社 Ｅｅｐｒｏｍを使用した記録装置
US5630063A (en) * 1994-04-28 1997-05-13 Rockwell International Corporation Data distribution system for multi-processor memories using simultaneous data transfer without processor intervention
JP4309421B2 (ja) 2006-12-25 2009-08-05 エルピーダメモリ株式会社 半導体記憶装置とその書き込み制御方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090258A (en) * 1976-12-29 1978-05-16 Westinghouse Electric Corp. MNOS non-volatile memory with write cycle suppression
US4149270A (en) * 1977-09-26 1979-04-10 Westinghouse Electric Corp. Variable threshold device memory circuit having automatic refresh feature
US4288863A (en) * 1979-04-26 1981-09-08 Itt Industries, Inc. Programmable semiconductor memory cell
EP0050005A2 (fr) * 1980-10-15 1982-04-21 Kabushiki Kaisha Toshiba Mémoire semiconductrice à délai de programmation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582438B2 (ja) * 1978-02-17 1983-01-17 三洋電機株式会社 不揮発性半導体メモリ装置
JPS54137933A (en) * 1978-04-18 1979-10-26 Sharp Corp Programmable nonvolatile rom
JPS55150179A (en) * 1979-05-04 1980-11-21 Fujitsu Ltd Semiconductor memory unit
JPS56130884A (en) * 1980-03-14 1981-10-14 Toshiba Corp Semiconductor memory device
US4377857A (en) * 1980-11-18 1983-03-22 Fairchild Camera & Instrument Electrically erasable programmable read-only memory
JPS57150192A (en) * 1981-03-13 1982-09-16 Toshiba Corp Non-volatile semiconductor memory device
JPS57193066A (en) * 1982-03-31 1982-11-27 Hitachi Ltd Eprom device
JPS59142474A (ja) * 1983-02-04 1984-08-15 Fujitsu Ltd スイツチマトリツクス試験方式

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090258A (en) * 1976-12-29 1978-05-16 Westinghouse Electric Corp. MNOS non-volatile memory with write cycle suppression
US4149270A (en) * 1977-09-26 1979-04-10 Westinghouse Electric Corp. Variable threshold device memory circuit having automatic refresh feature
US4288863A (en) * 1979-04-26 1981-09-08 Itt Industries, Inc. Programmable semiconductor memory cell
EP0050005A2 (fr) * 1980-10-15 1982-04-21 Kabushiki Kaisha Toshiba Mémoire semiconductrice à délai de programmation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211069A1 (fr) * 1985-02-11 1987-02-25 Advanced Micro Devices, Inc. Circuit d'ecriture efficace en mode page pour e?2 proms
EP0211069A4 (fr) * 1985-02-11 1990-06-27 Advanced Micro Devices Inc Circuit d'ecriture efficace en mode page pour e?2 proms.
EP0293339A1 (fr) * 1987-05-27 1988-11-30 STMicroelectronics S.r.l. Dispositif de mémoire permanente supportant un grand nombre de cycles de programmation
EP0332274A2 (fr) * 1988-03-09 1989-09-13 Koninklijke Philips Electronics N.V. EEPROM à mode d'effacement et d'écriture commandé par des données
EP0332274A3 (fr) * 1988-03-09 1991-10-09 Koninklijke Philips Electronics N.V. EEPROM à mode d'effacement et d'écriture commandé par des données

Also Published As

Publication number Publication date
EP0131344B1 (fr) 1992-01-02
JPH0697557B2 (ja) 1994-11-30
EP0131344A3 (en) 1987-09-23
KR850001614A (ko) 1985-03-30
JPS6052999A (ja) 1985-03-26
IE841745L (en) 1985-01-11
DE3485402D1 (de) 1992-02-13
KR920001076B1 (ko) 1992-02-01
IE57868B1 (en) 1993-05-05
US4566080A (en) 1986-01-21

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