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EA200970023A1 - Способ формирования тонкой пленки - Google Patents

Способ формирования тонкой пленки

Info

Publication number
EA200970023A1
EA200970023A1 EA200970023A EA200970023A EA200970023A1 EA 200970023 A1 EA200970023 A1 EA 200970023A1 EA 200970023 A EA200970023 A EA 200970023A EA 200970023 A EA200970023 A EA 200970023A EA 200970023 A1 EA200970023 A1 EA 200970023A1
Authority
EA
Eurasian Patent Office
Prior art keywords
substrate
thin film
plasma
rotating electrode
electrical power
Prior art date
Application number
EA200970023A
Other languages
English (en)
Other versions
EA013222B1 (ru
Inventor
Нобутака Аомине
Юки Аосима
Казуси Хаяси
Тосихиро Кугимия
Такаси Кобори
Original Assignee
Асахи Гласс Компани, Лимитед
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Асахи Гласс Компани, Лимитед filed Critical Асахи Гласс Компани, Лимитед
Publication of EA200970023A1 publication Critical patent/EA200970023A1/ru
Publication of EA013222B1 publication Critical patent/EA013222B1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

При формировании тонкой пленки на подложке с помощью плазмы при давлении атмосферы, близком к атмосферному давлению, можно контролировать частицы, образующиеся в результате реакции реакционного газа, и непрерывно формировать равномерную тонкую пленку, даже когда промежуток между электродом и подложкой задан более широким, чем в обычном способе. Электрическое питание подают на цилиндрический вращающийся электрод 12, ось вращения которого параллельна подложке, для генерирования плазмы в промежутке между этим вращающимся электродом 12 и подложкой S, и подаваемый реакционный газ G активируют посредством сгенерированной плазмы с образованием тонкой пленки на подложке S, причем на вращающийся электрод 12 подают высокочастотное электрическое питание с частотой от 100 кГц до 1 МГц.
EA200970023A 2006-06-16 2007-06-14 Способ формирования тонкой пленки EA013222B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006167922A JP2009079233A (ja) 2006-06-16 2006-06-16 薄膜形成方法
PCT/JP2007/062038 WO2007145292A1 (ja) 2006-06-16 2007-06-14 薄膜形成方法

Publications (2)

Publication Number Publication Date
EA200970023A1 true EA200970023A1 (ru) 2009-06-30
EA013222B1 EA013222B1 (ru) 2010-04-30

Family

ID=38831806

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200970023A EA013222B1 (ru) 2006-06-16 2007-06-14 Способ формирования тонкой пленки

Country Status (6)

Country Link
US (1) US20090098311A1 (ru)
EP (1) EP2039801B1 (ru)
JP (2) JP2009079233A (ru)
CN (1) CN101528978B (ru)
EA (1) EA013222B1 (ru)
WO (1) WO2007145292A1 (ru)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2311067A1 (en) * 2007-11-08 2011-04-20 Applied Materials Inc. a Corporation of the State of Delaware Electrode arrangement with movable shield
JP5065306B2 (ja) * 2008-12-25 2012-10-31 コバレントマテリアル株式会社 気相成長用ＳｉＣ製治具
WO2011010726A1 (ja) * 2009-07-24 2011-01-27 株式会社ユーテック プラズマＣＶＤ装置、ＳｉＯ２膜又はＳｉＯＦ膜及びその成膜方法
JP5270505B2 (ja) * 2009-10-05 2013-08-21 株式会社神戸製鋼所 プラズマｃｖｄ装置
US20140312761A1 (en) * 2011-11-22 2014-10-23 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Plasma source and vacuum plasma processing apparatus provided with same
DE102012103470A1 (de) 2012-04-20 2013-10-24 Hochschule für Angewandte Wissenschaft und Kunst - Hildesheim/Holzminden/Göttingen Plasmaroller
CN103025039A (zh) * 2012-11-30 2013-04-03 大连理工大学 一种大气压非热等离子体发生器
CN103037613B (zh) * 2012-12-07 2016-01-20 常州中科常泰等离子体科技有限公司 全自动冷等离子体种子处理器控制系统
DE102013000440B4 (de) * 2013-01-15 2014-07-24 Cinogy Gmbh Plasma-Behandlungsgerät mit einer drehbar in einem Griffgehäuse gelagerten Rolle
DE102013019058B4 (de) * 2013-11-15 2016-03-24 Cinogy Gmbh Gerät zur Behandlung einer Fläche mit einem Plasma
RU2599294C1 (ru) * 2015-05-19 2016-10-10 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) Способ получения тонкопленочного покрытия

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2680888B2 (ja) * 1989-04-06 1997-11-19 住友電気工業株式会社 薄膜形成方法
JP3295310B2 (ja) * 1995-08-08 2002-06-24 三洋電機株式会社 回転電極を用いた高速成膜方法及びその装置
CA2202430C (en) * 1996-04-12 2007-07-03 Junichi Ebisawa Oxide film, laminate and methods for their production
US6586055B1 (en) * 2001-06-04 2003-07-01 Sharp Kabushiki Kaisha Method for depositing functionally gradient thin film
JP4088427B2 (ja) * 2001-06-28 2008-05-21 株式会社神戸製鋼所 プラズマ成膜装置
JP4009458B2 (ja) * 2001-12-26 2007-11-14 株式会社神戸製鋼所 プラズマｃｖｄ成膜装置
US6759100B2 (en) * 2002-06-10 2004-07-06 Konica Corporation Layer formation method, and substrate with a layer formed by the method
JP4133353B2 (ja) * 2002-07-26 2008-08-13 株式会社神戸製鋼所 シリコン酸化薄膜またはチタン酸化薄膜の製造方法
US20070253051A1 (en) * 2003-09-29 2007-11-01 Kunihiko Ishihara Optical Device
JP4349052B2 (ja) * 2003-09-29 2009-10-21 コニカミノルタホールディングス株式会社 ディスプレイ用フレネルレンズの製造方法
US7459187B2 (en) * 2003-10-29 2008-12-02 Kabushiki Kaisha Kobe Seiko Sho Surface-treatment method and equipment
JP2006167922A (ja) 2004-12-10 2006-06-29 Mitsubishi Heavy Ind Ltd 印刷機

Also Published As

Publication number Publication date
JPWO2007145292A1 (ja) 2009-11-12
CN101528978B (zh) 2011-05-25
US20090098311A1 (en) 2009-04-16
EP2039801A1 (en) 2009-03-25
EP2039801B1 (en) 2012-09-26
CN101528978A (zh) 2009-09-09
JP2009079233A (ja) 2009-04-16
JP5139283B2 (ja) 2013-02-06
EA013222B1 (ru) 2010-04-30
EP2039801A4 (en) 2011-07-06
WO2007145292A1 (ja) 2007-12-21

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Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM

MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): RU