DK1979512T3 - Digel til behandling af smeltet silicium og fremgangsmåde til fremstilling heraf - Google Patents

Digel til behandling af smeltet silicium og fremgangsmåde til fremstilling heraf

Info

Publication number: DK1979512T3
Authority: DK; Denmark
Prior art keywords: crucible; processing; molten silicon; basic body; inner volume
Prior art date: 2006-01-12

Application number

DK07702727.4T

Other languages

English (en)

Inventor

Gilbert Rancoule

Original Assignee

Vesuvius Crucible Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-01-12

Filing date

2007-01-12

Publication date

2011-01-17

2007-01-12 Application filed by Vesuvius Crucible Co filed Critical Vesuvius Crucible Co

2011-01-17 Application granted granted Critical

2011-01-17 Publication of DK1979512T3 publication Critical patent/DK1979512T3/da

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Silicon Compounds (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Ceramic Products (AREA)
Crucibles And Fluidized-Bed Furnaces (AREA)
Mold Materials And Core Materials (AREA)
Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Press Drives And Press Lines (AREA)

DK07702727.4T 2006-01-12 2007-01-12 Digel til behandling af smeltet silicium og fremgangsmåde til fremstilling heraf DK1979512T3 (da)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
EP06447007A EP1811064A1 (fr)	2006-01-12	2006-01-12	Creuset pour le traitement de silicium à l'état fondu
PCT/EP2007/000254 WO2007080120A1 (en)	2006-01-12	2007-01-12	Crucible for the treatment of molten silicon

Publications (1)

Publication Number	Publication Date
DK1979512T3 true DK1979512T3 (da)	2011-01-17

Family

ID=36507605

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DK07702727.4T DK1979512T3 (da)	2006-01-12	2007-01-12	Digel til behandling af smeltet silicium og fremgangsmåde til fremstilling heraf

Country Status (20)

Country	Link
US (1)	US7833490B2 (da)
EP (2)	EP1811064A1 (da)
JP (1)	JP5400392B2 (da)
KR (1)	KR101212916B1 (da)
CN (1)	CN101370968A (da)
AT (1)	ATE480650T1 (da)
AU (1)	AU2007204406B2 (da)
BR (1)	BRPI0706222A2 (da)
CA (1)	CA2634199C (da)
DE (1)	DE602007009043D1 (da)
DK (1)	DK1979512T3 (da)
ES (1)	ES2349158T3 (da)
NO (1)	NO20083468L (da)
PT (1)	PT1979512E (da)
RU (1)	RU2423558C2 (da)
SI (1)	SI1979512T1 (da)
TW (1)	TWI395841B (da)
UA (1)	UA89717C2 (da)
WO (1)	WO2007080120A1 (da)
ZA (1)	ZA200805509B (da)

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TWI400369B (zh) *	2005-10-06	2013-07-01	Vesuvius Crucible Co	用於矽結晶的坩堝及其製造方法
TWI401343B (zh) *	2009-06-25	2013-07-11	Wafer Works Corp	具有保護層之石英玻璃坩堝及其製造方法
CN102549201A (zh) *	2009-07-16	2012-07-04	Memc新加坡私人有限公司	涂覆坩埚及其制备方法和用途
NO20092797A1 (no) *	2009-07-31	2011-02-01	Nordic Ceramics As	Digel
DE102010000687B4 (de) *	2010-01-05	2012-10-18	Solarworld Innovations Gmbh	Tiegel und Verfahren zur Herstellung von Silizium-Blöcken
US20110180229A1 (en) *	2010-01-28	2011-07-28	Memc Singapore Pte. Ltd. (Uen200614794D)	Crucible For Use In A Directional Solidification Furnace
JP2011219286A (ja) *	2010-04-06	2011-11-04	Koji Tomita	シリコン及び炭化珪素の製造方法及び製造装置
DK2655705T3 (da) *	2010-12-22	2015-04-27	Steuler Solar Gmbh	Digler
WO2012092369A2 (en) *	2010-12-30	2012-07-05	Saint-Gobain Ceramics & Plastics, Inc.	Crucible body and method of forming same
US20120248286A1 (en)	2011-03-31	2012-10-04	Memc Singapore Pte. Ltd. (Uen200614794D)	Systems For Insulating Directional Solidification Furnaces
CN102862986A (zh) *	2012-04-19	2013-01-09	北京民海艳科技有限公司	冶金法生产太阳能多晶硅用定向凝固器及多晶硅生产方法
CN103774209B (zh) *	2012-10-26	2016-06-15	阿特斯(中国)投资有限公司	硅铸锭用坩埚及其涂层制备方法
CN103060908A (zh) *	2013-01-06	2013-04-24	奥特斯维能源（太仓）有限公司	双层陶瓷坩埚
TWI663126B (zh) *	2014-07-09	2019-06-21	法商維蘇威法國公司	包含可磨塗層之輥、其製造方法及其用途
JP5935021B2 (ja) *	2015-02-20	2016-06-15	蒲池　豊	シリコン結晶の製造方法
CN111848201B (zh) *	2020-07-24	2022-09-02	西安超码科技有限公司	一种具有碳化硅/硅涂层的炭/炭坩埚及其制备方法

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DE3629231A1 (de) *	1986-08-28	1988-03-03	Heliotronic Gmbh	Verfahren zum aufschmelzen von in einen schmelztiegel chargiertem siliciumpulver und schmelztiegel zur durchfuehrung des verfahrens
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UA81278C2 (en)	2002-12-06	2007-12-25		Vessel for holding a silicon and method for its making
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CN1946881B (zh)	2004-04-29	2010-06-09	维苏维尤斯·克鲁斯布公司	用于硅结晶的坩埚
KR100573473B1 (ko) *	2004-05-10	2006-04-24	주식회사 실트론	실리콘 웨이퍼 및 그 제조방법
US7540919B2 (en) *	2005-04-01	2009-06-02	Gt Solar Incorporated	Solidification of crystalline silicon from reusable crucible molds
EP1739209A1 (en)	2005-07-01	2007-01-03	Vesuvius Crucible Company	Crucible for the crystallization of silicon
TWI400369B (zh)	2005-10-06	2013-07-01	Vesuvius Crucible Co	用於矽結晶的坩堝及其製造方法

2006
- 2006-01-12 EP EP06447007A patent/EP1811064A1/fr not_active Withdrawn
2007
- 2007-01-11 TW TW096101077A patent/TWI395841B/zh not_active IP Right Cessation
- 2007-01-12 KR KR1020087016906A patent/KR101212916B1/ko not_active IP Right Cessation
- 2007-01-12 CN CNA2007800030630A patent/CN101370968A/zh active Pending
- 2007-01-12 DE DE602007009043T patent/DE602007009043D1/de active Active
- 2007-01-12 EP EP07702727A patent/EP1979512B1/en not_active Not-in-force
- 2007-01-12 US US12/159,865 patent/US7833490B2/en not_active Expired - Fee Related
- 2007-01-12 UA UAA200809060A patent/UA89717C2/ru unknown
- 2007-01-12 ES ES07702727T patent/ES2349158T3/es active Active
- 2007-01-12 RU RU2008132975/05A patent/RU2423558C2/ru not_active IP Right Cessation
- 2007-01-12 DK DK07702727.4T patent/DK1979512T3/da active
- 2007-01-12 SI SI200730372T patent/SI1979512T1/sl unknown
- 2007-01-12 ZA ZA200805509A patent/ZA200805509B/xx unknown
- 2007-01-12 PT PT07702727T patent/PT1979512E/pt unknown
- 2007-01-12 WO PCT/EP2007/000254 patent/WO2007080120A1/en active Application Filing
- 2007-01-12 JP JP2008549835A patent/JP5400392B2/ja not_active Expired - Fee Related
- 2007-01-12 BR BRPI0706222-2A patent/BRPI0706222A2/pt not_active Application Discontinuation
- 2007-01-12 AU AU2007204406A patent/AU2007204406B2/en not_active Ceased
- 2007-01-12 AT AT07702727T patent/ATE480650T1/de active
- 2007-01-12 CA CA2634199A patent/CA2634199C/en not_active Expired - Fee Related
2008
- 2008-08-11 NO NO20083468A patent/NO20083468L/no not_active Application Discontinuation

Also Published As

Publication number	Publication date
DE602007009043D1 (de)	2010-10-21
ES2349158T3 (es)	2010-12-28
ATE480650T1 (de)	2010-09-15
NO20083468L (no)	2008-08-11
BRPI0706222A2 (pt)	2011-03-22
JP5400392B2 (ja)	2014-01-29
US7833490B2 (en)	2010-11-16
ZA200805509B (en)	2009-12-30
PT1979512E (pt)	2010-11-09
CN101370968A (zh)	2009-02-18
CA2634199A1 (en)	2007-07-19
KR20080082978A (ko)	2008-09-12
EP1811064A1 (fr)	2007-07-25
RU2008132975A (ru)	2010-02-20
TW200738919A (en)	2007-10-16
TWI395841B (zh)	2013-05-11
KR101212916B1 (ko)	2012-12-14
US20080292524A1 (en)	2008-11-27
CA2634199C (en)	2013-09-24
SI1979512T1 (sl)	2010-11-30
EP1979512B1 (en)	2010-09-08
RU2423558C2 (ru)	2011-07-10
UA89717C2 (ru)	2010-02-25
EP1979512A1 (en)	2008-10-15
WO2007080120A1 (en)	2007-07-19
JP2009523115A (ja)	2009-06-18
AU2007204406B2 (en)	2012-02-16
AU2007204406A1 (en)	2007-07-19

Publication	Publication Date	Title
DK1979512T3 (da)	2011-01-17	Digel til behandling af smeltet silicium og fremgangsmåde til fremstilling heraf
BRPI0615029A2 (pt)	2009-06-16	processos e intermediários
ATE398196T1 (de)	2008-07-15	Tiegel für die kristallisation von silicium
TW200734437A (en)	2007-09-16	Polishing liquid for barrier layer
TW200733291A (en)	2007-09-01	Decoupled chamber body
SG179158A1 (en)	2012-05-30	Composition and method for polishing bulk silicon
EA200701742A1 (ru)	2008-02-28	Способы получения сиропа
MX2007009397A (es)	2007-09-21	Componente con un recubrimiento para reducir la capacidad de humectacion de la superficie y procedimiento para su fabricacion.
TW200730652A (en)	2007-08-16	Silicon body formation method and device thereof
MXPA03000438A (es)	2004-09-10	Deposicion de vapor.
WO2012092369A3 (en)	2012-11-22	Crucible body and method of forming same
ATE410486T1 (de)	2008-10-15	Beschichtetes metall-substrat
TW200730596A (en)	2007-08-16	Composition for polishing semiconductor layers
WO2008102357A3 (en)	2010-02-25	Method for the preparation of ceramic materials
SG140530A1 (en)	2008-03-28	Alkaline etching solution for semiconductor wafer and alkaline etching method
FR2889087B1 (fr)	2008-09-12	Support de cuisson pour ceramiques et procede d'obtention
WO2008058270A3 (en)	2008-07-10	A susceptor and method of forming a led device using such susceptor
ATE457297T1 (de)	2010-02-15	Verbinden von siliciumcarbid
TW200531837A (en)	2005-10-01	Slotted substrates and methods of forming
TW200603215A (en)	2006-01-16	Apparatus for manufacturing substrate
DE502005006247D1 (de)	2009-01-29	Brennofen
ITRM20040496A1 (it)	2005-01-13	Procedimento per la produzione di un componente in ceramica al carburo di silicio.
TW200621659A (en)	2006-07-01	Ceramics for a glass mold
FR2899574B1 (fr)	2008-12-05	Fabrication de materiaux denses, en carbures de metaux de transition.
TW200719955A (en)	2007-06-01	Process for the production of a structured sol-gel layer