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DK138779B - Fremgangsmåde til digelfri zonesmeltning. - Google Patents

Fremgangsmåde til digelfri zonesmeltning.

Info

Publication number
DK138779B
DK138779B DK157067AA DK157067A DK138779B DK 138779 B DK138779 B DK 138779B DK 157067A A DK157067A A DK 157067AA DK 157067 A DK157067 A DK 157067A DK 138779 B DK138779 B DK 138779B
Authority
DK
Denmark
Prior art keywords
crucible
procedure
free zone
zone melting
melting
Prior art date
Application number
DK157067AA
Other languages
English (en)
Other versions
DK138779C (da
Inventor
Wolfgang Keller
Konrad Reuschel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK138779B publication Critical patent/DK138779B/da
Application granted granted Critical
Publication of DK138779C publication Critical patent/DK138779C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK157067AA 1966-06-15 1967-03-28 Fremgangsmåde til digelfri zonesmeltning. DK138779B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0104290 1966-06-15

Publications (2)

Publication Number Publication Date
DK138779B true DK138779B (da) 1978-10-30
DK138779C DK138779C (da) 1979-04-09

Family

ID=7525764

Family Applications (1)

Application Number Title Priority Date Filing Date
DK157067AA DK138779B (da) 1966-06-15 1967-03-28 Fremgangsmåde til digelfri zonesmeltning.

Country Status (5)

Country Link
US (1) US3685973A (da)
BE (1) BE699651A (da)
DK (1) DK138779B (da)
GB (1) GB1175449A (da)
NL (1) NL143435B (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
DE2533858C2 (de) * 1975-07-29 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum tiegelfreien Zonenschmelzen eines Halbleitermaterialstabes mit in axialer Richtung feststehender Induktionsheizspule
DE2538812A1 (de) * 1975-09-01 1977-03-03 Wacker Chemitronic Verfahren zum dotieren von halbleiterstaeben
JPS63291888A (ja) * 1987-05-25 1988-11-29 Shin Etsu Handotai Co Ltd 半導体単結晶製造装置
US5319670A (en) * 1992-07-24 1994-06-07 The United States Of America As Represented By The United States Department Of Energy Velocity damper for electromagnetically levitated materials

Also Published As

Publication number Publication date
GB1175449A (en) 1969-12-23
DE1519894A1 (de) 1971-01-21
NL143435B (nl) 1974-10-15
BE699651A (da) 1967-12-08
DE1519894B2 (de) 1975-10-09
NL6708321A (da) 1967-12-18
US3685973A (en) 1972-08-22
DK138779C (da) 1979-04-09

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