DK131253B - Integrated capacitor storage. - Google Patents
Integrated capacitor storage.Info
- Publication number
- DK131253B DK131253B DK214469AA DK214469A DK131253B DK 131253 B DK131253 B DK 131253B DK 214469A A DK214469A A DK 214469AA DK 214469 A DK214469 A DK 214469A DK 131253 B DK131253 B DK 131253B
- Authority
- DK
- Denmark
- Prior art keywords
- capacitor storage
- integrated capacitor
- integrated
- storage
- capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
- H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Software Systems (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6805704.A NL162500C (en) | 1968-04-23 | 1968-04-23 | INTEGRATED CAPACITOR MEMORY. |
Publications (2)
Publication Number | Publication Date |
---|---|
DK131253B true DK131253B (en) | 1975-06-16 |
DK131253C DK131253C (en) | 1975-11-17 |
Family
ID=19803412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK214469AA DK131253B (en) | 1968-04-23 | 1969-04-18 | Integrated capacitor storage. |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS509515B1 (en) |
AT (1) | AT301908B (en) |
BE (1) | BE731974A (en) |
CH (1) | CH511496A (en) |
DE (2) | DE1919507C3 (en) |
DK (1) | DK131253B (en) |
ES (2) | ES366285A1 (en) |
FR (1) | FR2011816A1 (en) |
GB (2) | GB1271154A (en) |
NL (1) | NL162500C (en) |
SE (1) | SE386299B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8574629B2 (en) * | 2008-08-01 | 2013-11-05 | Anteis S.A. | Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356860A (en) * | 1964-05-08 | 1967-12-05 | Gen Micro Electronics Inc | Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation |
-
1968
- 1968-04-23 NL NL6805704.A patent/NL162500C/en active
-
1969
- 1969-04-17 DE DE1919507A patent/DE1919507C3/en not_active Expired
- 1969-04-17 DE DE19691966847 patent/DE1966847A1/en not_active Withdrawn
- 1969-04-18 DK DK214469AA patent/DK131253B/en unknown
- 1969-04-21 ES ES366285A patent/ES366285A1/en not_active Expired
- 1969-04-21 CH CH600269A patent/CH511496A/en not_active IP Right Cessation
- 1969-04-21 AT AT383569A patent/AT301908B/en not_active IP Right Cessation
- 1969-04-22 SE SE6905711A patent/SE386299B/en unknown
- 1969-04-23 FR FR6912840A patent/FR2011816A1/fr not_active Withdrawn
- 1969-04-23 BE BE731974D patent/BE731974A/xx unknown
- 1969-04-23 JP JP44031055A patent/JPS509515B1/ja active Pending
- 1969-04-23 GB GB20743/69A patent/GB1271154A/en not_active Expired
- 1969-04-23 GB GB3691/71A patent/GB1271155A/en not_active Expired
-
1970
- 1970-12-31 ES ES386979A patent/ES386979A1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH511496A (en) | 1971-08-15 |
DK131253C (en) | 1975-11-17 |
GB1271154A (en) | 1972-04-19 |
JPS509515B1 (en) | 1975-04-14 |
NL6805704A (en) | 1969-10-27 |
FR2011816A1 (en) | 1970-03-13 |
DE1919507B2 (en) | 1979-12-06 |
ES366285A1 (en) | 1971-05-01 |
GB1271155A (en) | 1972-04-19 |
DE1919507A1 (en) | 1969-11-20 |
NL162500C (en) | 1980-05-16 |
BE731974A (en) | 1969-10-23 |
DE1919507C3 (en) | 1982-06-09 |
DE1966847A1 (en) | 1974-09-19 |
NL162500B (en) | 1979-12-17 |
AT301908B (en) | 1972-09-25 |
ES386979A1 (en) | 1973-12-01 |
SE386299B (en) | 1976-08-02 |
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