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BE731974A - - Google Patents

Info

Publication number
BE731974A
BE731974A BE731974DA BE731974A BE 731974 A BE731974 A BE 731974A BE 731974D A BE731974D A BE 731974DA BE 731974 A BE731974 A BE 731974A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE731974A publication Critical patent/BE731974A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12Arrangements for performing computing operations, e.g. operational amplifiers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Networks Using Active Elements (AREA)
BE731974D 1968-04-23 1969-04-23 BE731974A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805704.A NL162500C (en) 1968-04-23 1968-04-23 INTEGRATED CAPACITOR MEMORY.

Publications (1)

Publication Number Publication Date
BE731974A true BE731974A (en) 1969-10-23

Family

ID=19803412

Family Applications (1)

Application Number Title Priority Date Filing Date
BE731974D BE731974A (en) 1968-04-23 1969-04-23

Country Status (11)

Country Link
JP (1) JPS509515B1 (en)
AT (1) AT301908B (en)
BE (1) BE731974A (en)
CH (1) CH511496A (en)
DE (2) DE1919507C3 (en)
DK (1) DK131253B (en)
ES (2) ES366285A1 (en)
FR (1) FR2011816A1 (en)
GB (2) GB1271154A (en)
NL (1) NL162500C (en)
SE (1) SE386299B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574629B2 (en) * 2008-08-01 2013-11-05 Anteis S.A. Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356860A (en) * 1964-05-08 1967-12-05 Gen Micro Electronics Inc Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation

Also Published As

Publication number Publication date
CH511496A (en) 1971-08-15
DK131253C (en) 1975-11-17
GB1271154A (en) 1972-04-19
JPS509515B1 (en) 1975-04-14
NL6805704A (en) 1969-10-27
FR2011816A1 (en) 1970-03-13
DE1919507B2 (en) 1979-12-06
ES366285A1 (en) 1971-05-01
GB1271155A (en) 1972-04-19
DE1919507A1 (en) 1969-11-20
NL162500C (en) 1980-05-16
DE1919507C3 (en) 1982-06-09
DE1966847A1 (en) 1974-09-19
NL162500B (en) 1979-12-17
AT301908B (en) 1972-09-25
ES386979A1 (en) 1973-12-01
SE386299B (en) 1976-08-02
DK131253B (en) 1975-06-16

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