DE876278C - Process for the production of barrier layers for semiconductor photocells and dry rectifiers - Google Patents
Process for the production of barrier layers for semiconductor photocells and dry rectifiersInfo
- Publication number
- DE876278C DE876278C DEA10413D DEA0010413D DE876278C DE 876278 C DE876278 C DE 876278C DE A10413 D DEA10413 D DE A10413D DE A0010413 D DEA0010413 D DE A0010413D DE 876278 C DE876278 C DE 876278C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- semiconductor
- barrier layers
- production
- photocells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000004888 barrier function Effects 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 title description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- 239000011669 selenium Substances 0.000 claims description 11
- CXMYWOCYTPKBPP-UHFFFAOYSA-N 3-(3-hydroxypropylamino)propan-1-ol Chemical compound OCCCNCCCO CXMYWOCYTPKBPP-UHFFFAOYSA-N 0.000 claims description 2
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/0431—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/046—Provision of discrete insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
Description
Verfahren zur Herstellung von Sperrsdächten für Halbleiterphotozellen und Trockengleichrichter Die Erfindung betrifft ein Verfahren zur Herstellung überaus #dünner und gleichmäßiger Sperrschichten für Sperrschichtphotozellen und Trockengleichrichter. Bei Photozellen wie auch Trockengleichrichtern zu Meßzwecken kommt es ausschlagebend darauf an, daß die Sperrschicht in sich gleichmäßig und überdies auch bei größten Stückzahlen in immer gleichbleibender Stärke erzeugt wird. Die bekannten Herstellungsverfahren derartiger Zellen oder Trockengleichrichter, bei denen sich die Sperrsc:hicht spontan bildet, sind mancherlei Zufälligkeiten unterworfen, so daß brauchbare Exemplare für solche speziellen Zwecke sorgfältig aus größeren Serien ausgesucht werden müssen. Andererseits zeigen die Elemente mit einer künstlichen isolierenden Zwischenschicht aus Polystyrol od. dgl. den Nachteil, daß sie auch in der Flußri,chtung einen übermäßig hohen inneren Widerstand haben. Es hat sich nun gezeigt, daß sich besonders günstige Vorbedingungen für die Bildung einer reproduzierbaren und gleichmäßigen Sperrsc#hicht mit eineinüberzug aus Selen in seiner roten nicht leitenden Modifikation auf dem Halbleiter erzielen lassen, welcher aus einer Lösung auf dem Halbleiter niedergeschlagen wird. Besonders gün# stige Ergebnisse lassen sich bei solchen Photo7eIlen und Trockengleichrichtern erzielen, bei denen der Halbleiter ebenfalls aus Selen., in der leitenden kristallinen Modifikation, besteht, doch ergibt die Erzeugung einer #dünnen Selenschicht nach der Erfindung auchauf anderen Halbleiterschichten die günstigsten Ergebnisse.'In jedem Fall erhält man Selenschichten extrem geringer Schichtdicke mit genaudosierbaren Substanzinengen.Process for the production of barrier roofs for semiconductor photocells and dry rectifier The invention relates to a method of manufacture exceedingly # thinner and more uniform barriers for barrier photocells and dry rectifiers. In the case of photocells as well as dry rectifiers for measuring purposes, it is crucial on the fact that the barrier layer is uniform and, moreover, even with the largest Number of pieces is always produced in the same strength. The known manufacturing processes such cells or dry rectifiers in which the blocking layer changes spontaneously forms are subject to various coincidences, so that usable specimens must be carefully selected from larger series for such special purposes. On the other hand, show the elements with an artificial insulating intermediate layer from polystyrene or the like. The disadvantage that they are excessive in the flow direction have high internal resistance. It has now been shown that they are particularly favorable Preconditions for the formation of a reproducible and uniform barrier layer with a single coating of selenium in its red non-conductive modification on the Let semiconductor achieve, which deposited from a solution on the semiconductor will. Particularly favorable results can be achieved with such photocells and dry rectifiers achieve, in which the semiconductor is also made of selenium., in the conductive crystalline Modification exists, but the creation of a # thin selenium layer results the Invention is also the cheapest on other semiconductor layers Results. In any case, extremely thin layers of selenium are obtained with precisely metered amounts of substances.
Die Herstellung einer solchen dünnen Selenschicht kann beispielsweise auf folgende Weise erfolgen: Auf die freie Oberfläche des auf einer Trägerplatte, beispiels-weise aus Nickel oder vernIckeltein Eisen, aufgetragenen Halbleiters, z. B. aus Selen in der leitenden kristallinen Modifikation, wird auf inechanischein Wege- eine Selen in Lösung enthaltende Flüssigkeit, insbesondere Selen-bromid oder Schwefelkohlenstoff, auf-getragen und das so überzogene Element auf eine Temperatur von etwa ioo bis i2o' erhitzt. Hier-durch wird das Lösu-ngsmittel zur Verdampfun.g und das gelöste Selen zifin Niederschlag gebracht. Nach vollständiger Trocknung befindet sich auf - der Halbleiterschicht eine überaus dünne Schicht roten, nicht leitenden Selens, auf welche nunmehr zur Fertigstellung der Zelle oder des Gleichrichters die Gegenelektrode in bekannterWeise aufgebracht werden kann.Such a thin selenium layer can be produced, for example, in the following way: On the free surface of the semiconductor, e.g. B. of selenium in the conductive crystalline modification, is mechanically applied to a liquid containing selenium in solution, in particular selenium bromide or carbon disulfide, and the element coated in this way is heated to a temperature of about 100 to 12o '. This causes the solvent to evaporate and the dissolved selenium precipitate. After complete drying is on - the semiconductor layer is a very thin layer of red, non-conductive selenium, to which now the counter electrode may be applied in known manner to complete the cell or the rectifier.
Claims (1)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL95748D DE756025C (en) | 1938-10-04 | 1938-10-04 | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
| DEA10413D DE876278C (en) | 1938-10-04 | 1938-10-04 | Process for the production of barrier layers for semiconductor photocells and dry rectifiers |
| NL95275A NL54474C (en) | 1938-10-04 | 1939-09-20 | |
| FR886370D FR886370A (en) | 1938-10-04 | 1942-10-05 | Manufacturing process for thin selenium layers, in particular for photoelectric cells and dry rectifiers |
| FR886371D FR886371A (en) | 1938-10-04 | 1942-10-05 | Process for obtaining a barrier layer for dry straighteners |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL95748D DE756025C (en) | 1938-10-04 | 1938-10-04 | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
| DEA10413D DE876278C (en) | 1938-10-04 | 1938-10-04 | Process for the production of barrier layers for semiconductor photocells and dry rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE876278C true DE876278C (en) | 1953-05-11 |
Family
ID=25963088
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEA10413D Expired DE876278C (en) | 1938-10-04 | 1938-10-04 | Process for the production of barrier layers for semiconductor photocells and dry rectifiers |
| DEL95748D Expired DE756025C (en) | 1938-10-04 | 1938-10-04 | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL95748D Expired DE756025C (en) | 1938-10-04 | 1938-10-04 | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
Country Status (3)
| Country | Link |
|---|---|
| DE (2) | DE876278C (en) |
| FR (2) | FR886370A (en) |
| NL (1) | NL54474C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1032669B (en) * | 1953-03-17 | 1958-06-19 | Haloid Co | Photosensitive material for generating a latent charge image |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE519162C (en) * | 1928-11-01 | 1931-02-25 | Sueddeutsche Telefon App Kabel | Electric valve with a fixed valve layer arranged between electrodes |
| US1994632A (en) * | 1933-05-11 | 1935-03-19 | Bell Telephone Labor Inc | Asymmetric conductor |
| FR769645A (en) * | 1933-05-26 | 1934-08-29 | Thomson Houston Comp Francaise | Improvements to contact rectifiers |
-
1938
- 1938-10-04 DE DEA10413D patent/DE876278C/en not_active Expired
- 1938-10-04 DE DEL95748D patent/DE756025C/en not_active Expired
-
1939
- 1939-09-20 NL NL95275A patent/NL54474C/xx active
-
1942
- 1942-10-05 FR FR886370D patent/FR886370A/en not_active Expired
- 1942-10-05 FR FR886371D patent/FR886371A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1032669B (en) * | 1953-03-17 | 1958-06-19 | Haloid Co | Photosensitive material for generating a latent charge image |
Also Published As
| Publication number | Publication date |
|---|---|
| FR886371A (en) | 1943-10-13 |
| DE756025C (en) | 1952-06-16 |
| NL54474C (en) | 1943-05-15 |
| FR886370A (en) | 1943-10-13 |
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