DE519162C - Electric valve with a fixed valve layer arranged between electrodes - Google Patents
Electric valve with a fixed valve layer arranged between electrodesInfo
- Publication number
- DE519162C DE519162C DES88254D DES0088254D DE519162C DE 519162 C DE519162 C DE 519162C DE S88254 D DES88254 D DE S88254D DE S0088254 D DES0088254 D DE S0088254D DE 519162 C DE519162 C DE 519162C
- Authority
- DE
- Germany
- Prior art keywords
- valve
- sulfur
- electrodes
- layer arranged
- electric valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- 239000011593 sulfur Substances 0.000 claims description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 125000004354 sulfur functional group Chemical group 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 238000007792 addition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
Landscapes
- Manufacture And Refinement Of Metals (AREA)
Description
Die Erfindung bezieht sich auf elektrische Ventile, bei welchen zwischen zwei Elektroden, die vorzugsweise plattenförmig ausgebildet sind, eine Schicht aus den metallisehen Elementen der Schwefelgruppe, nämlich Selen oder Tellur, angeordnet ist. Das Selen tritt zwar vielfach auch als Metalloid auf. In einer Ventilschicht ist jedoch nur die leitfähige metallische Modifikation enthalten. Bei TeEur ist der Metallcharakter noch mehr ausgeprägt als bei dem Selen.The invention relates to electrical valves in which between two electrodes, which are preferably plate-shaped, a layer of the metallic see Elements of the sulfur group, viz Selenium or tellurium, is arranged. Selenium often occurs as a metalloid. In however, a valve layer only contains the conductive metallic modification. at TeEur, the metal character is even more pronounced than that of selenium.
Es hat sich gezeigt, daß bei Ventilschichten dieser Art eine bedeutende Verbesserung erzielt wird, wenn die Ventilschicht geringe Mengen Schwefel enthält.; denn durch den Zusatz von Schwefel zu dem Selen bzw. Tellur wird der elektrische Widerstand des Ventils in der Durchgangsrichtung ganz bedeutend herabgesetzt, während der Widerstand in der Sperrichtung verhältnismäßig nur sehr wenig ermäßigt wird. Dadurch wird sowohl die Leistung des Ventils pro Flächeneinheit als auch die Gleichrichterwirkung in bedeutendem Umfang verbessert.It has been found that valve sheets of this type have made a significant improvement when the valve layer contains small amounts of sulfur .; because by adding sulfur to the selenium or tellurium the electrical resistance of the valve in the direction of passage becomes quite significant reduced, while the resistance in the reverse direction is relatively only very high is little discounted. This increases both the performance of the valve per unit area as well as the rectifying effect improved to a significant extent.
Die Vermischung des Schwefels mit Selen kann beispielsweise in der Weise erfolgen, daß der Schwefel in geschmolzenem Selen aufgelöst wird. Die so gewonnene Masse wird dann zur Herstellung der Ventilschicht verwendet. The sulfur can be mixed with selenium, for example, in such a way that that the sulfur is dissolved in molten selenium. The mass obtained in this way is then used to manufacture the valve layer.
Schon sehr geringe Mengen von Schwefel haben eine sehr große Wirkung. Es hat sich gezeigt, daß das Ventil besonders gut arbeitet, wenn der Schwefelzusatz 5 0/0 oder weniger beträgt. Sehr gute Wirkung erhält man beispielsweise mit 1/2 % Schwefel. Die Wirkung des Schwefelzusatzes tritt auch dann ein, wenn die Schicht außer dem Schwefelzusatz noch andere beabsichtigte oder unbeabsichtigte Zusätze enthält.Even very small amounts of sulfur have a very great effect. It has showed that the valve works particularly well when the sulfur addition 5 0/0 or is less. A very good effect is obtained, for example, with 1/2% sulfur. the The effect of the addition of sulfur also occurs when the layer is in addition to the addition of sulfur contains other intentional or unintentional additions.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES88254D DE519162C (en) | 1928-11-01 | 1928-11-01 | Electric valve with a fixed valve layer arranged between electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES88254D DE519162C (en) | 1928-11-01 | 1928-11-01 | Electric valve with a fixed valve layer arranged between electrodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE519162C true DE519162C (en) | 1931-02-25 |
Family
ID=25997477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES88254D Expired DE519162C (en) | 1928-11-01 | 1928-11-01 | Electric valve with a fixed valve layer arranged between electrodes |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE519162C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE756025C (en) * | 1938-10-04 | 1952-06-16 | Aeg | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
| DE754795C (en) * | 1936-10-19 | 1952-10-13 | Siemens Schuckertwerke A G | Process for the manufacture of selenium rectifiers |
| DE919360C (en) * | 1949-08-17 | 1954-10-21 | Western Electric Co | Selenium rectifier with tellurium and process for its manufacture |
-
1928
- 1928-11-01 DE DES88254D patent/DE519162C/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE754795C (en) * | 1936-10-19 | 1952-10-13 | Siemens Schuckertwerke A G | Process for the manufacture of selenium rectifiers |
| DE756025C (en) * | 1938-10-04 | 1952-06-16 | Aeg | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
| DE919360C (en) * | 1949-08-17 | 1954-10-21 | Western Electric Co | Selenium rectifier with tellurium and process for its manufacture |
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