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DE69933396D1 - Optische halbleitervorrichtung - Google Patents

Optische halbleitervorrichtung

Info

Publication number
DE69933396D1
DE69933396D1 DE69933396T DE69933396T DE69933396D1 DE 69933396 D1 DE69933396 D1 DE 69933396D1 DE 69933396 T DE69933396 T DE 69933396T DE 69933396 T DE69933396 T DE 69933396T DE 69933396 D1 DE69933396 D1 DE 69933396D1
Authority
DE
Germany
Prior art keywords
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69933396T
Other languages
English (en)
Other versions
DE69933396T2 (de
Inventor
Peter Najda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69933396D1 publication Critical patent/DE69933396D1/de
Application granted granted Critical
Publication of DE69933396T2 publication Critical patent/DE69933396T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H01S5/2013—MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69933396T 1998-12-15 1999-12-15 Optische halbleitervorrichtung Expired - Fee Related DE69933396T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9827492A GB2344932A (en) 1998-12-15 1998-12-15 Semiconductor Laser with gamma and X electron barriers
GB9827492 1998-12-15
PCT/JP1999/007053 WO2000036719A1 (en) 1998-12-15 1999-12-15 An optical semiconductor device

Publications (2)

Publication Number Publication Date
DE69933396D1 true DE69933396D1 (de) 2006-11-09
DE69933396T2 DE69933396T2 (de) 2007-08-23

Family

ID=10844188

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69933396T Expired - Fee Related DE69933396T2 (de) 1998-12-15 1999-12-15 Optische halbleitervorrichtung

Country Status (8)

Country Link
US (1) US6785311B1 (de)
EP (1) EP1147584B1 (de)
JP (1) JP2002532908A (de)
KR (1) KR100463972B1 (de)
DE (1) DE69933396T2 (de)
GB (1) GB2344932A (de)
TW (1) TW461164B (de)
WO (1) WO2000036719A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6628694B2 (en) * 2001-04-23 2003-09-30 Agilent Technologies, Inc. Reliability-enhancing layers for vertical cavity surface emitting lasers
US6901096B2 (en) * 2002-12-20 2005-05-31 Finisar Corporation Material system for Bragg reflectors in long wavelength VCSELs
US6931044B2 (en) * 2003-02-18 2005-08-16 Agilent Technologies, Inc. Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
KR20050073740A (ko) * 2004-01-10 2005-07-18 삼성전자주식회사 이중 장벽층을 구비하는 양자우물 구조체를 포함하는반도체 소자 및 이를 채용한 반도체 레이저 및 그 제조 방법
WO2005101532A1 (ja) * 2004-04-16 2005-10-27 Nitride Semiconductors Co., Ltd. 窒化ガリウム系発光装置
JP4943052B2 (ja) * 2006-04-27 2012-05-30 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び光通信システム
US8890113B2 (en) * 2011-06-08 2014-11-18 Nikolay Ledentsov Optoelectronic device with a wide bandgap and method of making same
DE102012107795B4 (de) 2012-08-23 2022-02-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip
JP7334727B2 (ja) * 2018-03-28 2023-08-29 ソニーグループ株式会社 垂直共振器型面発光レーザ素子及び電子機器
US11228160B2 (en) * 2018-11-15 2022-01-18 Sharp Kabushiki Kaisha AlGaInPAs-based semiconductor laser device and method for producing same
CN113948967B (zh) * 2021-12-21 2022-03-15 苏州长光华芯光电技术股份有限公司 一种半导体结构及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0728080B2 (ja) * 1984-09-25 1995-03-29 日本電気株式会社 半導体超格子構造体
JPH0666519B2 (ja) * 1986-08-14 1994-08-24 東京工業大学長 超格子構造体
JPH057051A (ja) * 1990-11-09 1993-01-14 Furukawa Electric Co Ltd:The 量子バリア半導体光素子
JP3135960B2 (ja) * 1991-12-20 2001-02-19 シャープ株式会社 半導体レーザ装置
JPH05243676A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 半導体レーザ装置
JPH06326406A (ja) * 1993-03-18 1994-11-25 Fuji Xerox Co Ltd 半導体レーザ装置
JPH07147449A (ja) * 1993-11-25 1995-06-06 Mitsubishi Electric Corp 多重量子障壁構造，及び可視光半導体レーザダイオード
US5509024A (en) * 1994-11-28 1996-04-16 Xerox Corporation Diode laser with tunnel barrier layer
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
DE69707390T2 (de) * 1996-04-24 2002-06-27 Uniphase Opto Holdings Inc., San Jose Strahlungsemittierende halbleiterdiode und deren herstellungsverfahren
GB2320609A (en) * 1996-12-21 1998-06-24 Sharp Kk Semiconductor laser device
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
GB2353899A (en) * 1999-09-01 2001-03-07 Sharp Kk A quantum well semiconductor device with strained barrier layer

Also Published As

Publication number Publication date
TW461164B (en) 2001-10-21
KR20010082349A (ko) 2001-08-29
EP1147584B1 (de) 2006-09-27
GB2344932A (en) 2000-06-21
GB9827492D0 (en) 1999-02-10
DE69933396T2 (de) 2007-08-23
JP2002532908A (ja) 2002-10-02
EP1147584A1 (de) 2001-10-24
WO2000036719A1 (en) 2000-06-22
KR100463972B1 (ko) 2005-01-03
US6785311B1 (en) 2004-08-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee