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DE69835475D1 - Magnetisches Dünnfilmspeicherelement unter Verwendung des GMR-Effekts und magnetischer Dünnfilmspeicher - Google Patents

Magnetisches Dünnfilmspeicherelement unter Verwendung des GMR-Effekts und magnetischer Dünnfilmspeicher

Info

Publication number
DE69835475D1
DE69835475D1 DE69835475T DE69835475T DE69835475D1 DE 69835475 D1 DE69835475 D1 DE 69835475D1 DE 69835475 T DE69835475 T DE 69835475T DE 69835475 T DE69835475 T DE 69835475T DE 69835475 D1 DE69835475 D1 DE 69835475D1
Authority
DE
Germany
Prior art keywords
thin film
magnetic thin
film memory
gmr effect
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69835475T
Other languages
English (en)
Inventor
Naoki Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11103797A external-priority patent/JP4136028B2/ja
Priority claimed from JP11104097A external-priority patent/JP4054403B2/ja
Priority claimed from JP15522597A external-priority patent/JP3891511B2/ja
Priority claimed from JP15522497A external-priority patent/JP3957817B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69835475D1 publication Critical patent/DE69835475D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
DE69835475T 1997-04-28 1998-04-27 Magnetisches Dünnfilmspeicherelement unter Verwendung des GMR-Effekts und magnetischer Dünnfilmspeicher Expired - Lifetime DE69835475D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11103797A JP4136028B2 (ja) 1997-04-28 1997-04-28 磁性薄膜メモリ素子、それを用いた磁性薄膜メモリ及びその記録再生方法
JP11104097A JP4054403B2 (ja) 1997-04-28 1997-04-28 磁性薄膜メモリ
JP15522597A JP3891511B2 (ja) 1997-06-12 1997-06-12 磁性薄膜メモリ及びその記録再生方法
JP15522497A JP3957817B2 (ja) 1997-06-12 1997-06-12 磁性薄膜メモリ及びその記録再生方法

Publications (1)

Publication Number Publication Date
DE69835475D1 true DE69835475D1 (de) 2006-09-21

Family

ID=27469870

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69835475T Expired - Lifetime DE69835475D1 (de) 1997-04-28 1998-04-27 Magnetisches Dünnfilmspeicherelement unter Verwendung des GMR-Effekts und magnetischer Dünnfilmspeicher

Country Status (3)

Country Link
US (1) US6028786A (de)
EP (1) EP0875901B1 (de)
DE (1) DE69835475D1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6256222B1 (en) * 1994-05-02 2001-07-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
DE19836567C2 (de) 1998-08-12 2000-12-07 Siemens Ag Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung
TW454187B (en) * 1998-09-30 2001-09-11 Siemens Ag Magnetoresistive memory with low current density
US7157314B2 (en) 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
US6519179B2 (en) 1999-12-10 2003-02-11 Sharp Kabushiki Kaisha Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same
US6297983B1 (en) * 2000-02-29 2001-10-02 Hewlett-Packard Company Reference layer structure in a magnetic storage cell
US8575719B2 (en) * 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6392922B1 (en) * 2000-08-14 2002-05-21 Micron Technology, Inc. Passivated magneto-resistive bit structure and passivation method therefor
TW544677B (en) * 2000-12-26 2003-08-01 Matsushita Electric Ind Co Ltd Magneto-resistance memory device
US6603678B2 (en) * 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
US6803615B1 (en) * 2001-02-23 2004-10-12 Western Digital (Fremont), Inc. Magnetic tunnel junction MRAM with improved stability
US6538920B2 (en) 2001-04-02 2003-03-25 Manish Sharma Cladded read conductor for a pinned-on-the-fly soft reference layer
US6404674B1 (en) * 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
US6627913B2 (en) * 2001-09-10 2003-09-30 Micron Technology, Inc. Insulation of an MRAM device through a self-aligned spacer
US6576969B2 (en) * 2001-09-25 2003-06-10 Hewlett-Packard Development Company, L.P. Magneto-resistive device having soft reference layer
DE10158795B4 (de) 2001-11-30 2005-12-22 Infineon Technologies Ag Magnetoresistive Speicherzelle mit dynamischer Referenzschicht
US6750491B2 (en) * 2001-12-20 2004-06-15 Hewlett-Packard Development Company, L.P. Magnetic memory device having soft reference layer
WO2003069691A1 (fr) * 2002-02-15 2003-08-21 Matsushita Electric Industrial Co., Ltd. Element de reluctance magnetique, procede de preparation et memoire non volatile comprenant ledit element
US6728132B2 (en) * 2002-04-03 2004-04-27 Micron Technology, Inc. Synthetic-ferrimagnet sense-layer for high density MRAM applications
US6783995B2 (en) * 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
US6885576B2 (en) * 2002-08-13 2005-04-26 Micron Technology, Inc. Closed flux magnetic memory
JP3788964B2 (ja) * 2002-09-10 2006-06-21 株式会社東芝 磁気ランダムアクセスメモリ
JP3684225B2 (ja) * 2002-09-30 2005-08-17 株式会社東芝 磁気抵抗効果素子および磁気メモリ
EP1418591A3 (de) * 2002-11-06 2005-02-09 Interuniversitair Microelektronica Centrum Vzw Magnetische Vorrichtung
US7068537B2 (en) * 2002-11-06 2006-06-27 Interuniversitair Microelektronica Centrum (Imec) Magnetic device and method of making the same
EP1418590A1 (de) * 2002-11-07 2004-05-12 Interuniversitair Micro-Elektronica Centrum Vzw Magnetische Anordnung
US6765823B1 (en) * 2003-01-29 2004-07-20 Micron Technology Incorporated Magnetic memory cell with shape anisotropy
US6785160B1 (en) * 2003-04-29 2004-08-31 Hewlett-Packard Development Company, L.P. Method of providing stability of a magnetic memory cell
JP2005044847A (ja) * 2003-07-23 2005-02-17 Tdk Corp 磁気抵抗効果素子、磁気記憶セルおよび磁気メモリデバイスならびにそれらの製造方法
JP4544396B2 (ja) 2003-09-05 2010-09-15 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイス
US7112454B2 (en) * 2003-10-14 2006-09-26 Micron Technology, Inc. System and method for reducing shorting in memory cells
US20050110004A1 (en) * 2003-11-24 2005-05-26 International Business Machines Corporation Magnetic tunnel junction with improved tunneling magneto-resistance
US7088608B2 (en) * 2003-12-16 2006-08-08 Freescale Semiconductor, Inc. Reducing power consumption during MRAM writes using multiple current levels
US7193889B2 (en) * 2004-02-11 2007-03-20 Hewlett-Packard Development Company, Lp. Switching of MRAM devices having soft magnetic reference layers
US7397074B2 (en) * 2005-01-12 2008-07-08 Samsung Electronics Co., Ltd. RF field heated diodes for providing thermally assisted switching to magnetic memory elements
JP5517315B2 (ja) * 2010-11-01 2014-06-11 アルプス・グリーンデバイス株式会社 電流センサ
KR102222262B1 (ko) 2013-11-13 2021-03-04 삼성전자주식회사 자기저항 구조체 및 그 제조 방법, 이를 구비하는 전자소자
CN107922109B (zh) * 2015-08-11 2020-04-24 东芝存储器株式会社 磁屏蔽托盘、磁屏蔽包覆件及屏蔽外部磁场的磁性存储器产品
US9761793B1 (en) * 2016-05-18 2017-09-12 Samsung Electronics Co., Ltd. Magnetic memory device and method for manufacturing the same
US9825217B1 (en) 2016-05-18 2017-11-21 Samsung Electronics Co., Ltd. Magnetic memory device having cobalt-iron-beryllium magnetic layers
US20220068537A1 (en) * 2020-08-26 2022-03-03 Tdk Corporation Photodetection element and receiver

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation

Also Published As

Publication number Publication date
EP0875901B1 (de) 2006-08-09
US6028786A (en) 2000-02-22
EP0875901A2 (de) 1998-11-04
EP0875901A3 (de) 1999-11-03

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Legal Events

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