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DE69820331D1 - Optoelektronische Anordnung und Verfahren zu deren Herstellung - Google Patents

Optoelektronische Anordnung und Verfahren zu deren Herstellung

Info

Publication number
DE69820331D1
DE69820331D1 DE69820331T DE69820331T DE69820331D1 DE 69820331 D1 DE69820331 D1 DE 69820331D1 DE 69820331 T DE69820331 T DE 69820331T DE 69820331 T DE69820331 T DE 69820331T DE 69820331 D1 DE69820331 D1 DE 69820331D1
Authority
DE
Germany
Prior art keywords
production
optoelectronic arrangement
optoelectronic
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69820331T
Other languages
English (en)
Other versions
DE69820331T2 (de
Inventor
Tun S Tan
Ronald Kaneshiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc, Hewlett Packard Co filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE69820331D1 publication Critical patent/DE69820331D1/de
Publication of DE69820331T2 publication Critical patent/DE69820331T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
DE1998620331 1997-04-30 1998-01-19 Optoelektronische Anordnung und Verfahren zu deren Herstellung Expired - Fee Related DE69820331T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/846,730 US6043481A (en) 1997-04-30 1997-04-30 Optoelectronic array device having a light transmissive spacer layer with a ridged pattern and method of making same
US846730 1997-04-30

Publications (2)

Publication Number Publication Date
DE69820331D1 true DE69820331D1 (de) 2004-01-22
DE69820331T2 DE69820331T2 (de) 2004-11-18

Family

ID=25298776

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998620331 Expired - Fee Related DE69820331T2 (de) 1997-04-30 1998-01-19 Optoelektronische Anordnung und Verfahren zu deren Herstellung

Country Status (4)

Country Link
US (1) US6043481A (de)
EP (1) EP0875940B1 (de)
JP (1) JPH10303439A (de)
DE (1) DE69820331T2 (de)

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JP4123667B2 (ja) * 2000-01-26 2008-07-23 凸版印刷株式会社 固体撮像素子の製造方法
US6556349B2 (en) * 2000-12-27 2003-04-29 Honeywell International Inc. Variable focal length micro lens array field curvature corrector
US6909554B2 (en) 2000-12-27 2005-06-21 Finisar Corporation Wafer integration of micro-optics
DE10153176A1 (de) * 2001-08-24 2003-03-13 Schott Glas Packaging von Bauelementen mit sensorischen Eigenschaften mit einer strukturierbaren Abdichtungsschicht
SG118104A1 (en) * 2001-12-10 2006-01-27 Advanpack Solutions Pte Ltd Method for packaging an optoelectronic device and package formed thereby
DE10221858A1 (de) * 2002-02-25 2003-09-11 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung desselben
US6856462B1 (en) * 2002-03-05 2005-02-15 Serigraph Inc. Lenticular imaging system and method of manufacturing same
DE10222964B4 (de) * 2002-04-15 2004-07-08 Schott Glas Verfahren zur Gehäusebildung bei elektronischen Bauteilen sowie so hermetisch verkapselte elektronische Bauteile
US7290802B1 (en) * 2003-01-22 2007-11-06 Serigraph, Inc. Second surface micromotion display
JP4114060B2 (ja) * 2003-02-06 2008-07-09 セイコーエプソン株式会社 受光素子の製造方法
US6953925B2 (en) * 2003-04-28 2005-10-11 Stmicroelectronics, Inc. Microlens integration
JP4120813B2 (ja) * 2003-06-12 2008-07-16 セイコーエプソン株式会社 光学部品およびその製造方法
US8031253B2 (en) * 2003-06-24 2011-10-04 Omnivision International Holding, Ltd. Image sensor having micro-lens array separated with ridge structures and method of making
KR100541028B1 (ko) * 2003-07-21 2006-01-11 주식회사 옵토메카 이미지 센서 및 그 제조 방법
EP2322278B1 (de) 2003-10-24 2017-01-04 Aushon Biosystems, Inc. Vorrichtung und Verfahren zur Ausgabe von flüssigen, halbflüssigen und festen Proben
KR100640531B1 (ko) * 2004-08-20 2006-10-30 동부일렉트로닉스 주식회사 자기 정렬 이미지 센서 제조방법
KR100595601B1 (ko) * 2004-12-14 2006-07-05 동부일렉트로닉스 주식회사 씨모스 이미지 센서 제조방법
US7303931B2 (en) * 2005-02-10 2007-12-04 Micron Technology, Inc. Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces
US7264976B2 (en) * 2005-02-23 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Advance ridge structure for microlens gapless approach
KR100698091B1 (ko) * 2005-06-27 2007-03-23 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100649031B1 (ko) * 2005-06-27 2006-11-27 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR100720535B1 (ko) * 2005-10-11 2007-05-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100821346B1 (ko) * 2006-08-02 2008-04-10 삼성전자주식회사 화질이 향상되는 이미지 센서 및 이를 이용한 이미지 감지방법
KR100891075B1 (ko) * 2006-12-29 2009-03-31 동부일렉트로닉스 주식회사 이미지 센서의 제조방법
TWM322104U (en) * 2007-02-09 2007-11-11 Sin Guang Li Internat Co Ltd Improved structure of solar cell plate
DE102007042984A1 (de) * 2007-09-10 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur optischen Navigation
KR100937657B1 (ko) * 2007-11-30 2010-01-19 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
US7609451B1 (en) 2008-02-05 2009-10-27 Serigraph, Inc. Printed article for displaying images having improved definition and depth
GB2464102A (en) * 2008-10-01 2010-04-07 Optovate Ltd Illumination apparatus comprising multiple monolithic subarrays
KR20100077364A (ko) * 2008-12-29 2010-07-08 주식회사 동부하이텍 씨모스 이미지 센서의 제조 방법
DE102009005092A1 (de) * 2009-01-19 2010-09-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur optischen Navigation und dessen Verwendung
JP5643720B2 (ja) * 2011-06-30 2014-12-17 株式会社沖データ ディスプレイモジュール及びその製造方法と表示装置
JP6221540B2 (ja) * 2013-09-13 2017-11-01 富士通株式会社 光デバイス、光モジュール、光デバイスの製造方法及び光モジュールの製造方法
US10367021B2 (en) 2013-12-17 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and fabricating method thereof

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US4689291A (en) * 1985-08-30 1987-08-25 Xerox Corporation Pedestal-type microlens fabrication process
US4694185A (en) * 1986-04-18 1987-09-15 Eastman Kodak Company Light sensing devices with lenticular pixels
JPH03500834A (ja) * 1988-08-01 1991-02-21 イーストマン・コダック・カンパニー 感光装置用のレンズアレー
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
JPH0821703B2 (ja) * 1990-07-17 1996-03-04 株式会社東芝 固体撮像素子
US5298366A (en) * 1990-10-09 1994-03-29 Brother Kogyo Kabushiki Kaisha Method for producing a microlens array
JPH04252084A (ja) * 1991-01-28 1992-09-08 Eastman Kodak Japan Kk Ｌｅｄレンズアレイの製造方法
JP3067114B2 (ja) * 1991-06-04 2000-07-17 ソニー株式会社 マイクロレンズ形成方法
JP2566087B2 (ja) * 1992-01-27 1996-12-25 株式会社東芝 有色マイクロレンズアレイ及びその製造方法
US5310623A (en) * 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
US5317149A (en) * 1992-11-12 1994-05-31 Hewlett-Packard Company Optical encoder with encapsulated electrooptics
JPH08111540A (ja) * 1994-08-19 1996-04-30 Texas Instr Inc <Ti> 透明な共振トンネリング光検出器

Also Published As

Publication number Publication date
EP0875940B1 (de) 2003-12-10
DE69820331T2 (de) 2004-11-18
EP0875940A2 (de) 1998-11-04
JPH10303439A (ja) 1998-11-13
US6043481A (en) 2000-03-28
EP0875940A3 (de) 2000-01-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US

8339 Ceased/non-payment of the annual fee