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DE69807760D1 - Positiv-arbeitende Photoresistzusammensetzung - Google Patents

Positiv-arbeitende Photoresistzusammensetzung

Info

Publication number
DE69807760D1
DE69807760D1 DE69807760T DE69807760T DE69807760D1 DE 69807760 D1 DE69807760 D1 DE 69807760D1 DE 69807760 T DE69807760 T DE 69807760T DE 69807760 T DE69807760 T DE 69807760T DE 69807760 D1 DE69807760 D1 DE 69807760D1
Authority
DE
Germany
Prior art keywords
photoresist composition
positive working
working photoresist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69807760T
Other languages
English (en)
Other versions
DE69807760T2 (de
Inventor
Toshiyuki Ota
Kimiyaku Sano
Masaru Ohta
Hozumi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE69807760D1 publication Critical patent/DE69807760D1/de
Publication of DE69807760T2 publication Critical patent/DE69807760T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE69807760T 1997-01-27 1998-01-26 Positiv-arbeitende Photoresistzusammensetzung Expired - Lifetime DE69807760T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02721197A JP3633179B2 (ja) 1997-01-27 1997-01-27 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
DE69807760D1 true DE69807760D1 (de) 2002-10-17
DE69807760T2 DE69807760T2 (de) 2003-08-14

Family

ID=12214781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69807760T Expired - Lifetime DE69807760T2 (de) 1997-01-27 1998-01-26 Positiv-arbeitende Photoresistzusammensetzung

Country Status (5)

Country Link
US (1) US5942369A (de)
EP (1) EP0855620B1 (de)
JP (1) JP3633179B2 (de)
KR (1) KR100563184B1 (de)
DE (1) DE69807760T2 (de)

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JP4006815B2 (ja) * 1997-06-11 2007-11-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
EP0977085B1 (de) 1998-07-31 2003-03-26 Dai Nippon Printing Co., Ltd. Fotoempfindliche Harzzusammensetzung und Farbfilter
TW527363B (en) * 1999-09-08 2003-04-11 Shinetsu Chemical Co Polymers, chemical amplification resist compositions and patterning process
JP2001235859A (ja) * 2000-02-24 2001-08-31 Clariant (Japan) Kk 感光性樹脂組成物
US6737212B1 (en) 1999-10-07 2004-05-18 Clariant Finance (Bvi) Limited Photosensitive composition
US6783914B1 (en) * 2000-02-25 2004-08-31 Massachusetts Institute Of Technology Encapsulated inorganic resists
JP4370668B2 (ja) * 2000-03-29 2009-11-25 Ｊｓｒ株式会社 メッキ造形物製造用ポジ型感放射線性樹脂組成物およびメッキ造形物の製造方法
JP4149122B2 (ja) * 2000-07-19 2008-09-10 富士フイルム株式会社 電子線又はｘ線用ネガ型レジスト組成物
TW554250B (en) 2000-12-14 2003-09-21 Clariant Int Ltd Resist with high resolution to i ray and process for forming pattern
JP3710717B2 (ja) 2001-03-06 2005-10-26 東京応化工業株式会社 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法
JP4524944B2 (ja) * 2001-03-28 2010-08-18 Ｊｓｒ株式会社 感放射線性樹脂組成物、その層間絶縁膜およびマイクロレンズの形成への使用、ならびに層間絶縁膜およびマイクロレンズ
TW594390B (en) * 2001-05-21 2004-06-21 Tokyo Ohka Kogyo Co Ltd Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same
JP4213366B2 (ja) * 2001-06-12 2009-01-21 Ａｚエレクトロニックマテリアルズ株式会社 厚膜レジストパターンの形成方法
TWI242689B (en) 2001-07-30 2005-11-01 Tokyo Ohka Kogyo Co Ltd Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
KR20030026666A (ko) * 2001-09-26 2003-04-03 주식회사 동진쎄미켐 감광성 수지 조성물
KR100824356B1 (ko) * 2002-01-09 2008-04-22 삼성전자주식회사 감광성 수지 조성물 및 이를 사용한 패턴의 형성방법
CN100472330C (zh) * 2002-01-25 2009-03-25 捷时雅株式会社 双层层叠物及使用它的构图方法
ATE366779T1 (de) * 2002-03-20 2007-08-15 Fujifilm Corp Ir-photoempfindliche zusammensetzung
US7344970B2 (en) * 2002-04-11 2008-03-18 Shipley Company, L.L.C. Plating method
US7255972B2 (en) * 2002-10-23 2007-08-14 Az Electronic Materials Usa Corp. Chemically amplified positive photosensitive resin composition
JP2004198915A (ja) 2002-12-20 2004-07-15 Shin Etsu Chem Co Ltd ポジ型レジスト組成物及びパターン形成方法
US7195849B2 (en) * 2003-03-11 2007-03-27 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
US20040209383A1 (en) * 2003-04-17 2004-10-21 Industrial Technology Research Institute Lift-off process for protein chip
TW200510934A (en) * 2003-06-20 2005-03-16 Zeon Corp Radiation-sensitive resin composition and method for forming pattern using the composition
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US20050130437A1 (en) * 2003-12-16 2005-06-16 Taiwan Semiconductor Manufacturing Co. Dry film remove pre-filter system
TW200600975A (en) * 2004-02-20 2006-01-01 Jsr Corp Bilayer laminated film for bump formation and method of bump formation
JP2006154570A (ja) * 2004-11-30 2006-06-15 Tokyo Ohka Kogyo Co Ltd レジストパターンおよび導体パターンの製造方法
WO2006059392A1 (ja) * 2004-12-03 2006-06-08 Tokyo Ohka Kogyo Co., Ltd. 化学増幅型ホトレジスト組成物、ホトレジスト層積層体、ホトレジスト組成物製造方法、ホトレジストパターンの製造方法及び接続端子の製造方法
JP4322205B2 (ja) * 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
CN100582939C (zh) * 2005-02-05 2010-01-20 明德国际仓储贸易(上海)有限公司 正型光阻剂组成物及其应用
TW200739265A (en) * 2005-12-06 2007-10-16 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition and method of forming photoresist pattern using the same
JP4869707B2 (ja) * 2005-12-22 2012-02-08 セイコーエプソン株式会社 インクジェット記録用油性インク組成物
US7862982B2 (en) * 2008-06-12 2011-01-04 International Business Machines Corporation Chemical trim of photoresist lines by means of a tuned overcoat material
TWI485521B (zh) * 2010-06-28 2015-05-21 Everlight Chem Ind Corp 正型感光樹脂組成物
JP5729313B2 (ja) 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP5783142B2 (ja) 2011-07-25 2015-09-24 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP6155823B2 (ja) * 2012-07-12 2017-07-05 Jsr株式会社 有機ｅｌ素子、感放射線性樹脂組成物および硬化膜
JP6059071B2 (ja) * 2013-04-23 2017-01-11 東京応化工業株式会社 被膜形成方法
US9513550B2 (en) 2013-08-20 2016-12-06 Shin-Etsu Chemical Co., Ltd. Positive resist composition and pattern forming process
JP6432170B2 (ja) 2014-06-09 2018-12-05 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
CN111303362B (zh) * 2018-12-12 2023-05-30 上海飞凯材料科技股份有限公司 一种酚醛树脂及其制备方法、光刻胶
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Also Published As

Publication number Publication date
KR19980070890A (ko) 1998-10-26
JPH10207057A (ja) 1998-08-07
KR100563184B1 (ko) 2006-05-25
EP0855620A1 (de) 1998-07-29
DE69807760T2 (de) 2003-08-14
US5942369A (en) 1999-08-24
EP0855620B1 (de) 2002-09-11
JP3633179B2 (ja) 2005-03-30

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