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DE69803163D1 - Hochspannungs-nmos-durchgangsgatter für flash-speicher mit hochspannungsgenerator - Google Patents

Hochspannungs-nmos-durchgangsgatter für flash-speicher mit hochspannungsgenerator

Info

Publication number
DE69803163D1
DE69803163D1 DE69803163T DE69803163T DE69803163D1 DE 69803163 D1 DE69803163 D1 DE 69803163D1 DE 69803163 T DE69803163 T DE 69803163T DE 69803163 T DE69803163 T DE 69803163T DE 69803163 D1 DE69803163 D1 DE 69803163D1
Authority
DE
Germany
Prior art keywords
high voltage
flash memory
continuous gate
voltage generator
nmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69803163T
Other languages
English (en)
Other versions
DE69803163T2 (de
Inventor
Binh Quang Le
Pau-Ling Chen
Shane Hollmer
Shoichi Kawamura
Michael Chung
Vincent Leung
Masaru Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Advanced Micro Devices Inc
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/808,237 external-priority patent/US5801579A/en
Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
Publication of DE69803163D1 publication Critical patent/DE69803163D1/de
Application granted granted Critical
Publication of DE69803163T2 publication Critical patent/DE69803163T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE69803163T 1997-02-28 1998-02-05 Hochspannungs-nmos-durchgangsgatter für flash-speicher mit hochspannungsgenerator Expired - Fee Related DE69803163T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/808,237 US5801579A (en) 1997-02-28 1997-02-28 High voltage NMOS pass gate for integrated circuit with high voltage generator
US08/944,904 US5852576A (en) 1997-02-28 1997-10-06 High voltage NMOS pass gate for integrated circuit with high voltage generator and flash non-volatile memory device having the pass gate
PCT/US1998/002330 WO1998038646A1 (en) 1997-02-28 1998-02-05 High voltage nmos pass gate for flash memory with high voltage generator

Publications (2)

Publication Number Publication Date
DE69803163D1 true DE69803163D1 (de) 2002-02-21
DE69803163T2 DE69803163T2 (de) 2002-08-22

Family

ID=27123102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69803163T Expired - Fee Related DE69803163T2 (de) 1997-02-28 1998-02-05 Hochspannungs-nmos-durchgangsgatter für flash-speicher mit hochspannungsgenerator

Country Status (6)

Country Link
US (1) US5852576A (de)
EP (1) EP0963587B1 (de)
JP (1) JP3283531B2 (de)
KR (1) KR20000075834A (de)
DE (1) DE69803163T2 (de)
WO (1) WO1998038646A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6327183B1 (en) 2000-01-10 2001-12-04 Advanced Micro Devices, Inc. Nonlinear stepped programming voltage
US6269025B1 (en) 2000-02-09 2001-07-31 Advanced Micro Devices, Inc. Memory system having a program and erase voltage modifier
US6215702B1 (en) 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6246610B1 (en) 2000-02-22 2001-06-12 Advanced Micro Devices, Inc. Symmetrical program and erase scheme to improve erase time degradation in NAND devices
US6246611B1 (en) 2000-02-28 2001-06-12 Advanced Micro Devices, Inc. System for erasing a memory cell
US6304487B1 (en) * 2000-02-28 2001-10-16 Advanced Micro Devices, Inc. Register driven means to control programming voltages
US6295228B1 (en) 2000-02-28 2001-09-25 Advanced Micro Devices, Inc. System for programming memory cells
JP3818873B2 (ja) * 2001-06-26 2006-09-06 シャープ株式会社 不揮発性半導体記憶装置
KR100454143B1 (ko) * 2001-11-19 2004-10-26 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그 소거 방법
US6687158B2 (en) * 2001-12-21 2004-02-03 Fujitsu Limited Gapless programming for a NAND type flash memory
US6930536B2 (en) * 2003-11-04 2005-08-16 Micron Technology, Inc. Voltage booster
US7692973B2 (en) * 2006-03-31 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
KR100908516B1 (ko) * 2007-01-03 2009-07-20 주식회사 하이닉스반도체 플래쉬 메모리 소자용 고전압 생성기
US7515478B2 (en) * 2007-08-20 2009-04-07 Nantronics Semiconductor, Inc. CMOS logic compatible non-volatile memory cell structure, operation, and array configuration
KR101066762B1 (ko) * 2008-09-04 2011-09-21 주식회사 하이닉스반도체 전압 생성 회로 및 이를 구비한 불휘발성 메모리 소자
US8513712B2 (en) * 2009-09-28 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for forming a semiconductor gate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3934303C2 (de) * 1988-10-15 2001-01-25 Sony Corp Adreßdecoder für nichtflüchtige Speicher
JPH05151789A (ja) * 1991-11-29 1993-06-18 Nec Corp 電気的に書込・一括消去可能な不揮発性半導体記憶装置
JP2755047B2 (ja) * 1992-06-24 1998-05-20 日本電気株式会社 昇圧電位発生回路
US5315188A (en) * 1992-11-02 1994-05-24 Samsung Electronics Co., Ltd. High voltage switching circuit

Also Published As

Publication number Publication date
JP3283531B2 (ja) 2002-05-20
WO1998038646A1 (en) 1998-09-03
DE69803163T2 (de) 2002-08-22
EP0963587A1 (de) 1999-12-15
EP0963587B1 (de) 2002-01-16
KR20000075834A (ko) 2000-12-26
US5852576A (en) 1998-12-22
JP2000511327A (ja) 2000-08-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee