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DE69727809D1 - Mehrschichtenfilmkondensatoranordnungen und verfahren zur herstellung - Google Patents

Mehrschichtenfilmkondensatoranordnungen und verfahren zur herstellung

Info

Publication number
DE69727809D1
DE69727809D1 DE69727809T DE69727809T DE69727809D1 DE 69727809 D1 DE69727809 D1 DE 69727809D1 DE 69727809 T DE69727809 T DE 69727809T DE 69727809 T DE69727809 T DE 69727809T DE 69727809 D1 DE69727809 D1 DE 69727809D1
Authority
DE
Germany
Prior art keywords
producing
same
multilayer film
film capacitor
capacitor arrangements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69727809T
Other languages
English (en)
Other versions
DE69727809T2 (de
Inventor
Man-Kuen Watt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gennum Corp
Original Assignee
Gennum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gennum Corp filed Critical Gennum Corp
Publication of DE69727809D1 publication Critical patent/DE69727809D1/de
Application granted granted Critical
Publication of DE69727809T2 publication Critical patent/DE69727809T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H01G4/306—Stacked capacitors made by thin film techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Memories (AREA)
DE1997627809 1996-06-27 1997-06-26 Mehrschichtenfilmkondensatoranordnungen und verfahren zur herstellung Expired - Fee Related DE69727809T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US671057 1991-03-18
US08/671,057 US5745335A (en) 1996-06-27 1996-06-27 Multi-layer film capacitor structures and method
PCT/CA1997/000456 WO1998000871A1 (en) 1996-06-27 1997-06-26 Multi-layer film capacitor structures and method

Publications (2)

Publication Number Publication Date
DE69727809D1 true DE69727809D1 (de) 2004-04-01
DE69727809T2 DE69727809T2 (de) 2005-01-13

Family

ID=24692974

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997627809 Expired - Fee Related DE69727809T2 (de) 1996-06-27 1997-06-26 Mehrschichtenfilmkondensatoranordnungen und verfahren zur herstellung

Country Status (7)

Country Link
US (1) US5745335A (de)
EP (2) EP1408537A3 (de)
JP (3) JP2000514243A (de)
AU (1) AU3250097A (de)
DE (1) DE69727809T2 (de)
DK (1) DK0913001T3 (de)
WO (1) WO1998000871A1 (de)

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Also Published As

Publication number Publication date
EP0913001B1 (de) 2004-02-25
JP5225879B2 (ja) 2013-07-03
JP2009152621A (ja) 2009-07-09
AU3250097A (en) 1998-01-21
JP2000514243A (ja) 2000-10-24
EP0913001A1 (de) 1999-05-06
WO1998000871A1 (en) 1998-01-08
JP5695628B2 (ja) 2015-04-08
DK0913001T3 (da) 2004-06-28
EP1408537A3 (de) 2004-07-07
EP1408537A2 (de) 2004-04-14
DE69727809T2 (de) 2005-01-13
US5745335A (en) 1998-04-28
JP2013055344A (ja) 2013-03-21

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