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DE69706214D1 - Photoresistzusammensetzung - Google Patents

Photoresistzusammensetzung

Info

Publication number
DE69706214D1
DE69706214D1 DE69706214T DE69706214T DE69706214D1 DE 69706214 D1 DE69706214 D1 DE 69706214D1 DE 69706214 T DE69706214 T DE 69706214T DE 69706214 T DE69706214 T DE 69706214T DE 69706214 D1 DE69706214 D1 DE 69706214D1
Authority
DE
Germany
Prior art keywords
photoresist composition
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69706214T
Other languages
English (en)
Other versions
DE69706214T2 (de
Inventor
Mineo Nishi
Koji Nakano
Tadashi Kusumoto
Yasuhiro Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of DE69706214D1 publication Critical patent/DE69706214D1/de
Application granted granted Critical
Publication of DE69706214T2 publication Critical patent/DE69706214T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69706214T 1996-04-03 1997-04-01 Photoresistzusammensetzung Expired - Fee Related DE69706214T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8140396 1996-04-03

Publications (2)

Publication Number Publication Date
DE69706214D1 true DE69706214D1 (de) 2001-09-27
DE69706214T2 DE69706214T2 (de) 2002-07-25

Family

ID=13745363

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69706214T Expired - Fee Related DE69706214T2 (de) 1996-04-03 1997-04-01 Photoresistzusammensetzung

Country Status (5)

Country Link
US (1) US5759736A (de)
EP (1) EP0800116B1 (de)
KR (1) KR100466301B1 (de)
DE (1) DE69706214T2 (de)
TW (1) TW460751B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057010B2 (ja) * 1996-08-29 2000-06-26 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
TW459162B (en) * 1997-08-01 2001-10-11 Shipley Co Llc Photoresist composition
JP3843584B2 (ja) * 1998-03-20 2006-11-08 大日本インキ化学工業株式会社 感熱性組成物およびそれを用いた平版印刷版原版および印刷刷版作製方法
US6472315B2 (en) * 1998-03-30 2002-10-29 Intel Corporation Method of via patterning utilizing hard mask and stripping patterning material at low temperature
KR100308422B1 (ko) * 1999-04-15 2001-09-26 주식회사 동진쎄미켐 스핀-온-글라스 및 감광성 수지 제거용 씬너 조성물
JP4139548B2 (ja) * 2000-04-06 2008-08-27 富士フイルム株式会社 ポジ型フォトレジスト組成物
US20040191674A1 (en) * 2003-03-28 2004-09-30 Yukio Hanamoto Chemical amplification resist composition
JP3977307B2 (ja) * 2003-09-18 2007-09-19 東京応化工業株式会社 ポジ型フォトレジスト組成物及びレジストパターン形成方法
TWI377439B (en) * 2004-09-28 2012-11-21 Sumitomo Chemical Co Chemically amplified resist composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0412356A (ja) * 1990-04-28 1992-01-16 Toray Ind Inc ポジ型フォトレジスト組成物
US5376497A (en) * 1991-04-26 1994-12-27 Nippon Zeon Co., Ltd. Positive quinone diazide sulfonic acid ester resist composition containing select hydroxy compound additive
JPH05323598A (ja) * 1992-05-20 1993-12-07 Hitachi Chem Co Ltd ポジ型ホトレジスト組成物およびレジストパターンの製造法
US5283374A (en) * 1993-04-05 1994-02-01 Ocg Microelectronic Materials, Inc. Selected phenolic derivatives of 4-(4-hydroxyphenyl)-cyclohexanone and their use as sensitivity enhancers for radiation sensitive mixtures
TW332264B (en) * 1994-09-07 1998-05-21 Mitsubishi Chem Corp Photosensitive resin composition and method for forming a photoresist pattern

Also Published As

Publication number Publication date
TW460751B (en) 2001-10-21
EP0800116A1 (de) 1997-10-08
KR100466301B1 (ko) 2005-09-28
EP0800116B1 (de) 2001-08-22
US5759736A (en) 1998-06-02
DE69706214T2 (de) 2002-07-25
KR970071133A (ko) 1997-11-07

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SHIPLEY COMPANY, L.L.C., MARLBOROUGH, MASS., US

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee