DE69530716D1 - Beschleunigungssensor und Verfahren zu seiner Herstellung - Google Patents
Beschleunigungssensor und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69530716D1 DE69530716D1 DE69530716T DE69530716T DE69530716D1 DE 69530716 D1 DE69530716 D1 DE 69530716D1 DE 69530716 T DE69530716 T DE 69530716T DE 69530716 T DE69530716 T DE 69530716T DE 69530716 D1 DE69530716 D1 DE 69530716D1
- Authority
- DE
- Germany
- Prior art keywords
- accelerometer
- making
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S73/00—Measuring and testing
- Y10S73/01—Vibration
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3614094 | 1994-03-07 | ||
JP3614094 | 1994-03-07 | ||
JP24439794A JP3435844B2 (ja) | 1994-03-07 | 1994-10-07 | 半導体加速度センサ及びその製造方法 |
JP24439794 | 1994-10-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69530716D1 true DE69530716D1 (de) | 2003-06-18 |
DE69530716T2 DE69530716T2 (de) | 2004-03-18 |
Family
ID=26375187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69530716T Expired - Lifetime DE69530716T2 (de) | 1994-03-07 | 1995-03-07 | Beschleunigungssensor und Verfahren zu seiner Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5619050A (de) |
EP (1) | EP0671629B1 (de) |
JP (1) | JP3435844B2 (de) |
DE (1) | DE69530716T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3435850B2 (ja) * | 1994-10-28 | 2003-08-11 | 株式会社デンソー | 半導体力学量センサ及びその製造方法 |
US5578224A (en) * | 1995-06-07 | 1996-11-26 | Analog Devices, Inc. | Method of making micromachined device with ground plane under sensor |
US5922212A (en) * | 1995-06-08 | 1999-07-13 | Nippondenso Co., Ltd | Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body |
US5808331A (en) * | 1995-09-05 | 1998-09-15 | Motorola, Inc. | Monolithic semiconductor device having a microstructure and a transistor |
US5818093A (en) * | 1996-01-25 | 1998-10-06 | Motorola, Inc. | Semiconductor device having a movable gate |
KR100573709B1 (ko) * | 1996-04-26 | 2006-09-11 | 더 니뽄 시그널 컴파니, 리미티드 | 전자엑츄에이터및그제조방법 |
JP3198922B2 (ja) * | 1996-07-03 | 2001-08-13 | 株式会社村田製作所 | 静電容量型センサの製造方法 |
US6448624B1 (en) * | 1996-08-09 | 2002-09-10 | Denso Corporation | Semiconductor acceleration sensor |
US6220096B1 (en) * | 1997-03-20 | 2001-04-24 | Interscience, Inc. | Differential wideband vibration |
US5929472A (en) * | 1997-04-07 | 1999-07-27 | Motorola, Inc. | Semiconductor floating gate sensor device |
JP3555388B2 (ja) * | 1997-06-30 | 2004-08-18 | 株式会社デンソー | 半導体ヨーレートセンサ |
US5903038A (en) * | 1997-06-30 | 1999-05-11 | Motorola, Inc. | Semiconductor sensing device and method for fabricating the same |
JPH1194863A (ja) * | 1997-09-12 | 1999-04-09 | Nikon Corp | カンチレバー及びその製造方法 |
US6720634B2 (en) * | 2002-01-07 | 2004-04-13 | Honeywell International Inc. | Contactless acceleration switch |
CN100371718C (zh) * | 2003-07-10 | 2008-02-27 | 友达光电股份有限公司 | 电容式加速传感器 |
JP2008132583A (ja) * | 2006-10-24 | 2008-06-12 | Seiko Epson Corp | Memsデバイス |
JP2009145321A (ja) * | 2007-11-19 | 2009-07-02 | Hitachi Ltd | 慣性センサ |
JP5417737B2 (ja) * | 2008-04-23 | 2014-02-19 | パナソニック株式会社 | 慣性力センサ |
JP2011047732A (ja) * | 2009-08-26 | 2011-03-10 | Seiko Epson Corp | Memsセンサー、memsセンサーの製造方法および電子機器 |
JP2011075543A (ja) * | 2009-09-07 | 2011-04-14 | Seiko Epson Corp | 物理量センサー、物理量センサーの製造方法、および電子機器 |
JP2011128132A (ja) * | 2009-11-19 | 2011-06-30 | Seiko Epson Corp | 物理量センサー、物理量センサーの製造方法、および電子機器 |
JPWO2011065250A1 (ja) * | 2009-11-25 | 2013-04-11 | アルプス電気株式会社 | フォースセンサ |
DE102010012607B4 (de) * | 2010-03-24 | 2012-01-26 | Eads Deutschland Gmbh | HF-MEMS-Schalter |
US20120146452A1 (en) * | 2010-12-10 | 2012-06-14 | Miradia, Inc. | Microelectromechanical system device and semi-manufacture and manufacturing method thereof |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055655A (ja) * | 1983-09-07 | 1985-03-30 | Nissan Motor Co Ltd | 梁構造体を有する半導体装置 |
FR2578323B1 (fr) * | 1985-03-01 | 1987-11-20 | Metravib Sa | Capteur integre de grandeurs mecaniques a effet capacitif et procede de fabrication. |
JPS61212052A (ja) * | 1985-03-18 | 1986-09-20 | Nissan Motor Co Ltd | 梁構造体を有する半導体装置 |
US4674319A (en) * | 1985-03-20 | 1987-06-23 | The Regents Of The University Of California | Integrated circuit sensor |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
DE3814952A1 (de) * | 1988-05-03 | 1989-11-23 | Bosch Gmbh Robert | Sensor |
US5101669A (en) * | 1988-07-14 | 1992-04-07 | University Of Hawaii | Multidimensional force sensor |
US4930043A (en) * | 1989-02-28 | 1990-05-29 | United Technologies | Closed-loop capacitive accelerometer with spring constraint |
US5126812A (en) * | 1990-02-14 | 1992-06-30 | The Charles Stark Draper Laboratory, Inc. | Monolithic micromechanical accelerometer |
JPH0425764A (ja) * | 1990-05-21 | 1992-01-29 | Nec Corp | 半導体加速度センサ |
US5326726A (en) * | 1990-08-17 | 1994-07-05 | Analog Devices, Inc. | Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure |
DE69113632T2 (de) * | 1990-08-17 | 1996-03-21 | Analog Devices Inc | Monolithischer beschleunigungsmesser. |
US5075641A (en) * | 1990-12-04 | 1991-12-24 | Iowa State University Research Foundation, Inc. | High frequency oscillator comprising cointegrated thin film resonator and active device |
FR2687778B1 (fr) * | 1992-02-20 | 1994-05-20 | Sextant Avionique | Micro-capteur capacitif a capacite parasite reduite et procede de fabrication. |
ATE150873T1 (de) * | 1992-06-17 | 1997-04-15 | Analog Devices Inc | Verfahren zur herstellung eines eine integrierte halbleiterschaltung und eine selbsttragende mikrostruktur enthaltenden monolithischen chip |
-
1994
- 1994-10-07 JP JP24439794A patent/JP3435844B2/ja not_active Expired - Fee Related
-
1995
- 1995-03-06 US US08/399,345 patent/US5619050A/en not_active Expired - Lifetime
- 1995-03-07 DE DE69530716T patent/DE69530716T2/de not_active Expired - Lifetime
- 1995-03-07 EP EP95103255A patent/EP0671629B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3435844B2 (ja) | 2003-08-11 |
EP0671629B1 (de) | 2003-05-14 |
DE69530716T2 (de) | 2004-03-18 |
JPH07301640A (ja) | 1995-11-14 |
EP0671629A2 (de) | 1995-09-13 |
US5619050A (en) | 1997-04-08 |
EP0671629A3 (de) | 1999-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |