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DE69518972D1 - Geschützter schalter - Google Patents

Geschützter schalter

Info

Publication number
DE69518972D1
DE69518972D1 DE69518972T DE69518972T DE69518972D1 DE 69518972 D1 DE69518972 D1 DE 69518972D1 DE 69518972 T DE69518972 T DE 69518972T DE 69518972 T DE69518972 T DE 69518972T DE 69518972 D1 DE69518972 D1 DE 69518972D1
Authority
DE
Germany
Prior art keywords
protected switch
protected
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69518972T
Other languages
English (en)
Other versions
DE69518972T2 (de
Inventor
Brendan Patrick Kelly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69518972D1 publication Critical patent/DE69518972D1/de
Application granted granted Critical
Publication of DE69518972T2 publication Critical patent/DE69518972T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
DE69518972T 1994-12-07 1995-11-21 Geschützter schalter Expired - Lifetime DE69518972T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9424666A GB9424666D0 (en) 1994-12-07 1994-12-07 A protected switch
PCT/IB1995/001034 WO1996018240A1 (en) 1994-12-07 1995-11-21 A protected switch

Publications (2)

Publication Number Publication Date
DE69518972D1 true DE69518972D1 (de) 2000-11-02
DE69518972T2 DE69518972T2 (de) 2001-03-29

Family

ID=10765532

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69518972T Expired - Lifetime DE69518972T2 (de) 1994-12-07 1995-11-21 Geschützter schalter

Country Status (7)

Country Link
US (1) US5754074A (de)
EP (1) EP0744098B1 (de)
JP (1) JP3639597B2 (de)
KR (1) KR100388727B1 (de)
DE (1) DE69518972T2 (de)
GB (1) GB9424666D0 (de)
WO (1) WO1996018240A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0905851A1 (de) * 1997-09-30 1999-03-31 STMicroelectronics S.r.l. Schutzschaltung für eine Impuls-Versorgungsleitung in einer integrierten Halbleitervorrichtung
US5990723A (en) * 1998-01-09 1999-11-23 Maxim Integrated Products, Inc. Filter circuits for protecting against transient electrical pulses
US6064253A (en) * 1998-04-20 2000-05-16 Endgate Corporation Multiple stage self-biasing RF transistor circuit
TW440986B (en) * 1998-06-09 2001-06-16 Winbond Electronics Corp Electrostatic discharge event detector
US6509781B2 (en) * 2001-03-20 2003-01-21 Koninklijke Philips Electronics N.V. Circuit and method for controlling a dynamic, bi-directional high voltage analog switch
DE102005034365B3 (de) * 2005-07-22 2006-11-23 Infineon Technologies Ag Schaltungsanordnung mit einem Leistungs-MOS-Transistor und einer Ansteuerschaltung
EP1755221B1 (de) * 2005-08-17 2009-12-09 Infineon Technologies AG Verfahren und Treiberschaltung für die Steuerung eines MOS Leistungshalbleiters
US7528017B2 (en) * 2005-12-07 2009-05-05 Kovio, Inc. Method of manufacturing complementary diodes
US20090283824A1 (en) * 2007-10-30 2009-11-19 Northrop Grumman Systems Corporation Cool impact-ionization transistor and method for making same
DE102008018244B3 (de) * 2008-04-10 2009-11-19 Continental Automotive Gmbh Vorrichtung und Verfahren zum Erkennen eines Fehlers in einer Leistungsbrückenschaltung
DE102009024160A1 (de) * 2009-06-08 2010-12-30 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zur DC-DC-Umwandlung
JP5035391B2 (ja) * 2010-01-12 2012-09-26 株式会社デンソー 信号出力回路
JP2011174712A (ja) * 2010-02-23 2011-09-08 On Semiconductor Trading Ltd 電流検出回路及び半導体集積回路
CN103916115B (zh) * 2012-12-31 2017-11-14 意法半导体研发（上海）有限公司 传输门电路
CN108347243B (zh) 2017-01-25 2022-04-01 株式会社东海理化电机制作所 电平转换器
FR3063588B1 (fr) 2017-03-02 2022-07-08 Thales Sa Cellule de commutation de puissance isolee
US10734985B2 (en) * 2018-12-17 2020-08-04 Qualcomm Incorporated Comparators for power and high-speed applications
US10930639B2 (en) * 2019-02-19 2021-02-23 Nxp Usa, Inc. ESD protection circuit providing multiple detection signals
US11579645B2 (en) * 2019-06-21 2023-02-14 Wolfspeed, Inc. Device design for short-circuitry protection circuitry within transistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2320635A1 (fr) * 1975-08-05 1977-03-04 Thomson Csf Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif
US4691129A (en) * 1986-03-19 1987-09-01 Siemens Aktiengesellschaft Drive circuit for a power MOSFET with source-side load
US4728826A (en) * 1986-03-19 1988-03-01 Siemens Aktiengesellschaft MOSFET switch with inductive load
FR2644651B1 (fr) * 1989-03-15 1991-07-05 Sgs Thomson Microelectronics Circuit de commande de transistor mos de puissance sur charge inductive
GB2257583B (en) * 1991-05-10 1995-10-25 Fuji Electric Co Ltd Built-in drive power-source semiconductor device
JP3169723B2 (ja) * 1992-01-31 2001-05-28 株式会社日立製作所 保護回路を具備する半導体装置および電子システム
JP2795027B2 (ja) * 1992-02-17 1998-09-10 三菱電機株式会社 Ｉｇｂｔのゲート駆動回路
US5272399A (en) * 1992-02-25 1993-12-21 Siemens Aktiengesellschaft Circuit limiting the load current of a power MOSFET
US5418673A (en) * 1992-12-14 1995-05-23 North American Philips Corporation Control electrode disable circuit for power transistor

Also Published As

Publication number Publication date
EP0744098A1 (de) 1996-11-27
US5754074A (en) 1998-05-19
WO1996018240A1 (en) 1996-06-13
KR100388727B1 (ko) 2003-10-04
JPH09509298A (ja) 1997-09-16
KR970700956A (ko) 1997-02-12
JP3639597B2 (ja) 2005-04-20
EP0744098B1 (de) 2000-09-27
GB9424666D0 (en) 1995-02-01
DE69518972T2 (de) 2001-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL