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DE69510331D1 - Halbleiterlaserdiodenverstärker und dessen herstellung - Google Patents

Halbleiterlaserdiodenverstärker und dessen herstellung

Info

Publication number
DE69510331D1
DE69510331D1 DE69510331T DE69510331T DE69510331D1 DE 69510331 D1 DE69510331 D1 DE 69510331D1 DE 69510331 T DE69510331 T DE 69510331T DE 69510331 T DE69510331 T DE 69510331T DE 69510331 D1 DE69510331 D1 DE 69510331D1
Authority
DE
Germany
Prior art keywords
production
semiconductor laser
laser diode
diode amplifiers
amplifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69510331T
Other languages
English (en)
Other versions
DE69510331T2 (de
Inventor
Lukas Tiemeijer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Uniphase Opto Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniphase Opto Holdings Inc filed Critical Uniphase Opto Holdings Inc
Application granted granted Critical
Publication of DE69510331D1 publication Critical patent/DE69510331D1/de
Publication of DE69510331T2 publication Critical patent/DE69510331T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69510331T 1994-12-12 1995-11-13 Halbleiterlaserdiodenverstärker und dessen herstellung Expired - Fee Related DE69510331T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94203593 1994-12-12
PCT/IB1995/001000 WO1996019023A2 (en) 1994-12-12 1995-11-13 Semiconductor diode laser amplifier and method of manufacturing same

Publications (2)

Publication Number Publication Date
DE69510331D1 true DE69510331D1 (de) 1999-07-22
DE69510331T2 DE69510331T2 (de) 1999-11-25

Family

ID=8217442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510331T Expired - Fee Related DE69510331T2 (de) 1994-12-12 1995-11-13 Halbleiterlaserdiodenverstärker und dessen herstellung

Country Status (5)

Country Link
US (1) US5790302A (de)
EP (1) EP0744090B1 (de)
JP (1) JPH09509535A (de)
DE (1) DE69510331T2 (de)
WO (1) WO1996019023A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2813450B1 (fr) * 2000-08-22 2003-08-29 Cit Alcatel Amplificateur optique en semi-conducteur
FR2813449B1 (fr) * 2000-08-22 2003-01-17 Cit Alcatel Dispositif optique amplificateur
US6912237B2 (en) * 2001-02-06 2005-06-28 The Furukawa Electric Co., Ltd. Semiconductor laser module and semiconductor laser device having light feedback function
US7116851B2 (en) * 2001-10-09 2006-10-03 Infinera Corporation Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance
GB0126642D0 (en) 2001-11-06 2002-01-02 Denselight Semiconductors Pte Design of current blocking structure to improve semiconductor laser performance
JP2005135956A (ja) * 2003-10-28 2005-05-26 Mitsubishi Electric Corp 半導体光増幅器およびその製造方法ならびに光通信デバイス
CN101399615B (zh) * 2007-09-26 2012-01-25 华为技术有限公司 半导体光器件以及时钟恢复方法和装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8801667A (nl) * 1988-07-01 1990-02-01 Philips Nv Fi - coating voor dfb/dbr laserdiodes.
US4883684A (en) * 1988-07-01 1989-11-28 The Procter & Gamble Company Functional hardstock fat composition
US5196958A (en) * 1989-10-31 1993-03-23 U.S. Philips Corporation Optical amplifier having gain at two separated wavelengths
DE69104573T2 (de) * 1990-08-03 1995-04-20 Philips Nv Optischer Verstärker.
US5119039A (en) * 1990-12-31 1992-06-02 Gte Laboratories Incorporated Semiconductor optical amplifier with wideband electrical response
JP3014208B2 (ja) * 1992-02-27 2000-02-28 三菱電機株式会社 半導体光素子

Also Published As

Publication number Publication date
DE69510331T2 (de) 1999-11-25
US5790302A (en) 1998-08-04
WO1996019023A2 (en) 1996-06-20
WO1996019023A3 (en) 1996-08-15
JPH09509535A (ja) 1997-09-22
EP0744090B1 (de) 1999-06-16
EP0744090A1 (de) 1996-11-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Representative=s name: KEHL & ETTMAYR, PATENTANWAELTE, 81679 MUENCHEN

8339 Ceased/non-payment of the annual fee