DE69509581D1 - Elektrisch programmierbare Speicherzelle - Google Patents
Elektrisch programmierbare SpeicherzelleInfo
- Publication number
- DE69509581D1 DE69509581D1 DE69509581T DE69509581T DE69509581D1 DE 69509581 D1 DE69509581 D1 DE 69509581D1 DE 69509581 T DE69509581 T DE 69509581T DE 69509581 T DE69509581 T DE 69509581T DE 69509581 D1 DE69509581 D1 DE 69509581D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- programmable memory
- electrically programmable
- electrically
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5612—Multilevel memory cell with more than one floating gate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9404146A FR2718289B1 (fr) | 1994-03-30 | 1994-03-30 | Cellule mémoire électriquement programmable. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69509581D1 true DE69509581D1 (de) | 1999-06-17 |
DE69509581T2 DE69509581T2 (de) | 1999-12-23 |
Family
ID=9461877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69509581T Expired - Fee Related DE69509581T2 (de) | 1994-03-30 | 1995-03-24 | Elektrisch programmierbare Speicherzelle |
Country Status (5)
Country | Link |
---|---|
US (2) | US5687113A (de) |
EP (1) | EP0675547B1 (de) |
JP (1) | JPH07302849A (de) |
DE (1) | DE69509581T2 (de) |
FR (1) | FR2718289B1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19600307C1 (de) * | 1996-01-05 | 1998-01-08 | Siemens Ag | Hochintegrierter Halbleiterspeicher und Verfahren zur Herstellung des Halbleiterspeichers |
EP0926260A3 (de) | 1997-12-12 | 2001-04-11 | Matsushita Electric Industrial Co., Ltd. | Verwendung der Antikörper - Antigen Wechselwirkung zur Herstellung eines Metallfilmmusters |
FR2776830B1 (fr) | 1998-03-26 | 2001-11-23 | Sgs Thomson Microelectronics | Cellule memoire electriquement programmable |
US6074914A (en) | 1998-10-30 | 2000-06-13 | Halo Lsi Design & Device Technology, Inc. | Integration method for sidewall split gate flash transistor |
US6795348B2 (en) * | 2002-05-29 | 2004-09-21 | Micron Technology, Inc. | Method and apparatus for erasing flash memory |
JP4683817B2 (ja) * | 2002-09-27 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4454921B2 (ja) * | 2002-09-27 | 2010-04-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6831325B2 (en) * | 2002-12-20 | 2004-12-14 | Atmel Corporation | Multi-level memory cell with lateral floating spacers |
KR100650369B1 (ko) * | 2004-10-01 | 2006-11-27 | 주식회사 하이닉스반도체 | 폴리실리콘부유측벽을 갖는 비휘발성메모리장치 및 그제조 방법 |
US8099783B2 (en) * | 2005-05-06 | 2012-01-17 | Atmel Corporation | Security method for data protection |
US7453127B2 (en) * | 2006-02-13 | 2008-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double-diffused-drain MOS device with floating non-insulator spacers |
US7773416B2 (en) * | 2006-05-26 | 2010-08-10 | Macronix International Co., Ltd. | Single poly, multi-bit non-volatile memory device and methods for operating the same |
US8969928B2 (en) * | 2010-08-31 | 2015-03-03 | Micron Technology, Inc. | Transistors having a control gate and one or more conductive structures |
TWI710113B (zh) * | 2019-11-29 | 2020-11-11 | 億而得微電子股份有限公司 | 電子寫入抹除式可複寫唯讀記憶體的操作方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4203158A (en) * | 1978-02-24 | 1980-05-13 | Intel Corporation | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
DE3345173A1 (de) * | 1983-12-14 | 1985-07-25 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum aussortieren von unzuverlaessigen integrierten speichern |
US4590665A (en) * | 1984-12-10 | 1986-05-27 | Solid State Scientific, Inc. | Method for double doping sources and drains in an EPROM |
US4754320A (en) * | 1985-02-25 | 1988-06-28 | Kabushiki Kaisha Toshiba | EEPROM with sidewall control gate |
JPH06105786B2 (ja) * | 1985-08-20 | 1994-12-21 | セイコーエプソン株式会社 | 不揮発性メモリ− |
US4804637A (en) * | 1985-09-27 | 1989-02-14 | Texas Instruments Incorporated | EEPROM memory cell and driving circuitry |
US4939558A (en) * | 1985-09-27 | 1990-07-03 | Texas Instruments Incorporated | EEPROM memory cell and driving circuitry |
JPS63215079A (ja) * | 1987-03-04 | 1988-09-07 | Oki Electric Ind Co Ltd | Eprom半導体装置およびその製造方法 |
JPS63248175A (ja) * | 1987-04-03 | 1988-10-14 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH01262669A (ja) * | 1988-04-13 | 1989-10-19 | Sony Corp | 不揮発性半導体記憶装置 |
JPH0231466A (ja) * | 1988-07-21 | 1990-02-01 | Sony Corp | 不揮発性メモリ装置の製造方法 |
JPH02260564A (ja) * | 1989-03-31 | 1990-10-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH0350772A (ja) * | 1989-07-18 | 1991-03-05 | Sony Corp | 不揮発性メモリ装置の製造方法 |
JPH03177075A (ja) * | 1989-12-06 | 1991-08-01 | Kawasaki Steel Corp | 不揮発性半導体記憶装置 |
US5202576A (en) * | 1990-08-29 | 1993-04-13 | Texas Instruments Incorporated | Asymmetrical non-volatile memory cell, arrays and methods for fabricating same |
KR100243493B1 (ko) * | 1990-08-29 | 2000-02-01 | 윌리엄 비. 켐플러 | 비대칭의 비휘발성 메모리셀, 어레이 및 그 제조방법 |
US5267194A (en) * | 1991-08-30 | 1993-11-30 | Winbond Electronics Corporation | Electrically erasable programmable read-only-memory cell with side-wall floating gate |
US5379253A (en) * | 1992-06-01 | 1995-01-03 | National Semiconductor Corporation | High density EEPROM cell array with novel programming scheme and method of manufacture |
JP2871355B2 (ja) * | 1992-11-13 | 1999-03-17 | 日本電気株式会社 | 不揮発性半導体記憶装置のデータ消去方法 |
JPH06243179A (ja) * | 1993-02-12 | 1994-09-02 | Daikin Ind Ltd | 画像検索方法およびその装置 |
-
1994
- 1994-03-30 FR FR9404146A patent/FR2718289B1/fr not_active Expired - Fee Related
-
1995
- 1995-03-24 DE DE69509581T patent/DE69509581T2/de not_active Expired - Fee Related
- 1995-03-24 EP EP95410022A patent/EP0675547B1/de not_active Expired - Lifetime
- 1995-03-28 US US08/413,206 patent/US5687113A/en not_active Expired - Lifetime
- 1995-03-30 JP JP7095943A patent/JPH07302849A/ja active Pending
-
1997
- 1997-03-06 US US08/812,016 patent/US5740103A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5740103A (en) | 1998-04-14 |
FR2718289A1 (fr) | 1995-10-06 |
FR2718289B1 (fr) | 1996-08-02 |
US5687113A (en) | 1997-11-11 |
DE69509581T2 (de) | 1999-12-23 |
EP0675547A1 (de) | 1995-10-04 |
EP0675547B1 (de) | 1999-05-12 |
JPH07302849A (ja) | 1995-11-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |