DE69506284D1 - Gütegeschaltetes Lasersystem - Google Patents

Gütegeschaltetes Lasersystem

Info

Publication number: DE69506284D1
Authority: DE; Germany
Prior art keywords: laser system; switched laser; switched; laser
Prior art date: 1994-11-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69506284T

Other languages

English (en)

Other versions

DE69506284T2 (de

Inventor

Guo Li

Toshi Makino

Rongqing Hui

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Nortel Networks Ltd

Original Assignee

Northern Telecom Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-11-23

Filing date

1995-10-11

Publication date

1999-01-07

1995-10-11 Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd

1999-01-07 Application granted granted Critical

1999-01-07 Publication of DE69506284D1 publication Critical patent/DE69506284D1/de

1999-04-22 Publication of DE69506284T2 publication Critical patent/DE69506284T2/de

2015-10-12 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

DE69506284T 1994-11-23 1995-10-11 Gütegeschaltetes Lasersystem Expired - Fee Related DE69506284T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US08/346,939 US5455836A (en)	1994-11-23	1994-11-23	Optical Q-switching to generate ultra short pulses in diode lasers
PCT/CA1995/000569 WO1996016456A1 (en)	1994-11-23	1995-10-11	Optical q-switching to generate ultra short pulses in diode lasers

Publications (2)

Publication Number	Publication Date
DE69506284D1 true DE69506284D1 (de)	1999-01-07
DE69506284T2 DE69506284T2 (de)	1999-04-22

Family

ID=23361660

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69506284T Expired - Fee Related DE69506284T2 (de)	1994-11-23	1995-10-11	Gütegeschaltetes Lasersystem

Country Status (7)

Country	Link
US (1)	US5455836A (de)
EP (1)	EP0803139B1 (de)
JP (1)	JP3181294B2 (de)
KR (1)	KR100398997B1 (de)
CA (1)	CA2201622C (de)
DE (1)	DE69506284T2 (de)
WO (1)	WO1996016456A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2526806B2 (ja) *	1994-04-26	1996-08-21	日本電気株式会社	半導体レ―ザおよびその動作方法
FR2751796B1 (fr) *	1996-07-26	1998-08-28	Commissariat Energie Atomique	Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale
US6483859B1 (en) *	1999-06-24	2002-11-19	Lockheed Martin Corporation	System and method for high-speed laser detection of ultrasound
US6888871B1 (en) *	2000-07-12	2005-05-03	Princeton Optronics, Inc.	VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
US6671304B2 (en)	2001-08-28	2003-12-30	The United States Of America As Represented By The Secretary Of The Navy	Amplitude-modulated laser for high-bandwidth communications systems
US20050105577A1 (en) *	2003-11-13	2005-05-19	Matsushita Electric Industrial Co., Ltd.	Semiconductor laser device and manufacturing method for the same
US6897799B1 (en) *	2004-07-22	2005-05-24	Northrop Grumman Corporation	Current parking return to zero digital-to-analog converter
JP2008512945A (ja) *	2004-09-07	2008-04-24	マジックテクノロジーズ，インコーポレーテッド	Ｑｋｄチャネル多重化のシステム及び方法
US7447246B2 (en) *	2004-10-27	2008-11-04	Jian-Jun He	Q-modulated semiconductor laser
US20060104321A1 (en) *	2004-11-15	2006-05-18	Lightip Technologies Inc.	Q-modulated semiconductor laser with electro-absorptive grating structures
CN107809058B (zh) *	2017-11-16	2020-09-04	太原理工大学	一种单片集成半导体随机激光器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4641312A (en) *	1983-05-10	1987-02-03	Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V.	Method and device for producing individual short laser pulses
DD233248A1 (de) *	1984-12-27	1986-02-19	Zeiss Jena Veb Carl	Verfahren und anordnung zur erzeugung ultrakurzer lichtimpulse
USRE34192E (en) *	1985-05-01	1993-03-09	Spectra-Physics, Laser Diode Systems, Inc.	Miniaturized Q-switched diode pumped solid state laser
US5265115A (en) *	1991-08-30	1993-11-23	Hoya Corporation	Solid-state laser device having a feedback loop
US5317447A (en) *	1992-04-24	1994-05-31	Electro Scientific Industries, Inc.	High-power, compact, diode-pumped, tunable laser
US5283801A (en) *	1992-05-26	1994-02-01	Trw Inc.	External resonant ring cavity for generating high-peak-power laser pulses

1994
- 1994-11-23 US US08/346,939 patent/US5455836A/en not_active Expired - Fee Related
1995
- 1995-10-11 DE DE69506284T patent/DE69506284T2/de not_active Expired - Fee Related
- 1995-10-11 KR KR1019970703476A patent/KR100398997B1/ko not_active IP Right Cessation
- 1995-10-11 EP EP95933280A patent/EP0803139B1/de not_active Expired - Lifetime
- 1995-10-11 JP JP51640296A patent/JP3181294B2/ja not_active Expired - Fee Related
- 1995-10-11 CA CA002201622A patent/CA2201622C/en not_active Expired - Fee Related
- 1995-10-11 WO PCT/CA1995/000569 patent/WO1996016456A1/en active IP Right Grant

Also Published As

Publication number	Publication date
US5455836A (en)	1995-10-03
EP0803139B1 (de)	1998-11-25
KR980700715A (ko)	1998-03-30
DE69506284T2 (de)	1999-04-22
KR100398997B1 (ko)	2003-12-31
JP3181294B2 (ja)	2001-07-03
EP0803139A1 (de)	1997-10-29
CA2201622A1 (en)	1996-05-30
CA2201622C (en)	2000-08-22
WO1996016456A1 (en)	1996-05-30
JPH09512962A (ja)	1997-12-22

Publication	Publication Date	Title
DE69703782D1 (de)	2001-02-01	Laservorrichtung
DE59606916D1 (de)	2001-06-21	Lasergravuranlage
DE69714859D1 (de)	2002-09-26	Laservorrichtung
DE69817099D1 (de)	2003-09-18	Laserdrucker
DE69703697D1 (de)	2001-01-18	Laservorrichtung
DE19680508T1 (de)	1997-07-24	Konfokal-bis-konzentrischer diodengepumpter Laser
DE69605245D1 (de)	1999-12-30	Laser
DE69701275D1 (de)	2000-03-16	Lasersysteme
BR9503880A (pt)	1996-09-17	Módulo de laser
DE69717182D1 (de)	2003-01-02	Excimerlasergenerator
DE69312767D1 (de)	1997-09-11	Lasersystem
DE69837632D1 (de)	2007-06-06	Dreiniveau-Lasersystem
DE69404047D1 (de)	1997-08-14	Lasereinheit
DE69737538D1 (de)	2007-05-10	Lasergerät
DE69932668D1 (de)	2006-09-21	Lasersystem
DE59505168D1 (de)	1999-04-08	Lasermodul
DE69308078D1 (de)	1997-03-27	Laser-System
DE69506284D1 (de)	1999-01-07	Gütegeschaltetes Lasersystem
DE69937857D1 (de)	2008-02-14	Lasersystem
DE59507813D1 (de)	2000-03-23	Modengekoppelter Faserlaser
DE69529939D1 (de)	2003-04-24	Laservorrichtung
DE69609672D1 (de)	2000-09-14	Laser-System
DE69631170D1 (de)	2004-01-29	Lasersystem
DE69501211D1 (de)	1998-01-22	Nachrichtensystem
DE59504174D1 (de)	1998-12-10	Zündanlage

Legal Events

Date	Code	Title	Description
1999-12-23	8364	No opposition during term of opposition
2006-08-17	8339	Ceased/non-payment of the annual fee