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DE69937857D1 - Lasersystem - Google Patents

Lasersystem

Info

Publication number
DE69937857D1
DE69937857D1 DE69937857T DE69937857T DE69937857D1 DE 69937857 D1 DE69937857 D1 DE 69937857D1 DE 69937857 T DE69937857 T DE 69937857T DE 69937857 T DE69937857 T DE 69937857T DE 69937857 D1 DE69937857 D1 DE 69937857D1
Authority
DE
Germany
Prior art keywords
laser system
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69937857T
Other languages
English (en)
Other versions
DE69937857T2 (de
Inventor
Hiroyuki Hiiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of DE69937857D1 publication Critical patent/DE69937857D1/de
Publication of DE69937857T2 publication Critical patent/DE69937857T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0972—Prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
DE69937857T 1998-05-06 1999-05-05 Lasersystem Expired - Lifetime DE69937857T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12330198A JP3387824B2 (ja) 1998-05-06 1998-05-06 レーザ装置
JP12330198 1998-05-06

Publications (2)

Publication Number Publication Date
DE69937857D1 true DE69937857D1 (de) 2008-02-14
DE69937857T2 DE69937857T2 (de) 2009-01-02

Family

ID=14857160

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69937857T Expired - Lifetime DE69937857T2 (de) 1998-05-06 1999-05-05 Lasersystem

Country Status (4)

Country Link
US (1) US6163558A (de)
EP (1) EP0955707B1 (de)
JP (1) JP3387824B2 (de)
DE (1) DE69937857T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7065121B2 (en) * 2001-07-24 2006-06-20 Gsi Group Ltd. Waveguide architecture, waveguide devices for laser processing and beam control, and laser processing applications
US6738396B2 (en) 2001-07-24 2004-05-18 Gsi Lumonics Ltd. Laser based material processing methods and scalable architecture for material processing
ATE416500T1 (de) * 2002-09-02 2008-12-15 Limo Patentverwaltung Gmbh Halbleiterlaservorrichtung
US7525562B2 (en) * 2004-05-05 2009-04-28 Presstek, Inc. Graphic-arts laser imaging with reduced-length laser cavities and improved performance
JP2006080412A (ja) * 2004-09-13 2006-03-23 Sony Corp レーザシステム
US20080298404A1 (en) * 2004-11-29 2008-12-04 Koninklijke Philips Electronics, N.V. Radiation Beam Source Device
US7376169B2 (en) * 2005-03-07 2008-05-20 Joseph Reid Henrichs Optical phase conjugation laser diode
US7370760B2 (en) * 2005-04-15 2008-05-13 Kimberly-Clark Worldwide, Inc. Package that includes a plurality of disposable absorbent articles
JP4871326B2 (ja) * 2008-05-29 2012-02-08 浜松ホトニクス株式会社 レーザ光源
JP2009289990A (ja) * 2008-05-29 2009-12-10 Hamamatsu Photonics Kk レーザ光源
JPWO2016080252A1 (ja) * 2014-11-20 2017-08-31 カナレ電気株式会社 外部共振器型半導体レーザ
CN109193342B (zh) * 2018-10-15 2019-11-15 中国科学院理化技术研究所 一种半导体激光器
CN215377956U (zh) * 2021-06-21 2021-12-31 苏州旭创科技有限公司 外腔激光器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5050179A (en) * 1989-04-20 1991-09-17 Massachusetts Institute Of Technology External cavity semiconductor laser
US5018153A (en) * 1990-02-23 1991-05-21 Hughes Aircraft Company Method and apparatus for correcting amplitude variation in electro-optic laser systems
JP2685969B2 (ja) * 1990-08-29 1997-12-08 沖電気工業株式会社 第２高調波発生装置
US5185752A (en) * 1992-02-18 1993-02-09 Spectra Diode Laboratories, Inc. Coupling arrangements for frequency-doubled diode lasers
US5452312A (en) * 1993-10-18 1995-09-19 Matsushita Electric Industrial Co., Ltd. Short-wavelength laser light source and optical information processing aparatus
US5513196A (en) * 1995-02-14 1996-04-30 Deacon Research Optical source with mode reshaping

Also Published As

Publication number Publication date
EP0955707A3 (de) 2006-04-12
US6163558A (en) 2000-12-19
EP0955707B1 (de) 2008-01-02
DE69937857T2 (de) 2009-01-02
JP3387824B2 (ja) 2003-03-17
EP0955707A2 (de) 1999-11-10
JPH11317562A (ja) 1999-11-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition