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DE69416489D1 - Mikrowellenplasma-Bearbeitungsvorrichtung und -verfahren - Google Patents

Mikrowellenplasma-Bearbeitungsvorrichtung und -verfahren

Info

Publication number
DE69416489D1
DE69416489D1 DE69416489T DE69416489T DE69416489D1 DE 69416489 D1 DE69416489 D1 DE 69416489D1 DE 69416489 T DE69416489 T DE 69416489T DE 69416489 T DE69416489 T DE 69416489T DE 69416489 D1 DE69416489 D1 DE 69416489D1
Authority
DE
Germany
Prior art keywords
processing apparatus
plasma processing
microwave plasma
microwave
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69416489T
Other languages
English (en)
Other versions
DE69416489T2 (de
Inventor
Yoshiaki Sato
Mitsuru Katamoto
Hironobu Kawahara
Minoru Soraoka
Tsuyoshi Umemoto
Hideki Kihara
Katsuyoshi Kudo
Tooru Yukimasa
Hirofumi Kakutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69416489D1 publication Critical patent/DE69416489D1/de
Application granted granted Critical
Publication of DE69416489T2 publication Critical patent/DE69416489T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
DE69416489T 1993-11-12 1994-11-10 Mikrowellenplasma-Bearbeitungsvorrichtung und -verfahren Expired - Fee Related DE69416489T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5283028A JPH07142444A (ja) 1993-11-12 1993-11-12 マイクロ波プラズマ処理装置および処理方法

Publications (2)

Publication Number Publication Date
DE69416489D1 true DE69416489D1 (de) 1999-03-25
DE69416489T2 DE69416489T2 (de) 1999-09-30

Family

ID=17660290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69416489T Expired - Fee Related DE69416489T2 (de) 1993-11-12 1994-11-10 Mikrowellenplasma-Bearbeitungsvorrichtung und -verfahren

Country Status (6)

Country Link
US (1) US5861601A (de)
EP (1) EP0653775B1 (de)
JP (1) JPH07142444A (de)
KR (1) KR100388584B1 (de)
DE (1) DE69416489T2 (de)
TW (1) TW266307B (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263187A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
US5885353A (en) 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
DE19713352A1 (de) * 1997-03-29 1998-10-01 Deutsch Zentr Luft & Raumfahrt Plasmabrennersystem
EP1189493A3 (de) * 1997-05-22 2004-06-23 Canon Kabushiki Kaisha Plasmabehandlungsvorrichtung mit Mikrowellenapplikation und ringförmigem Wellenleiter sowie Behandlungsverfahren
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
JP2000124195A (ja) * 1998-10-14 2000-04-28 Tokyo Electron Ltd 表面処理方法及びその装置
JP3352418B2 (ja) 1999-01-28 2002-12-03 キヤノン株式会社 減圧処理方法及び減圧処理装置
JP3310957B2 (ja) * 1999-08-31 2002-08-05 東京エレクトロン株式会社 プラズマ処理装置
JP2001203099A (ja) 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
JP4504511B2 (ja) * 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
JP3574401B2 (ja) * 2000-12-13 2004-10-06 シャープ株式会社 プラズマプロセス装置
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20040221800A1 (en) * 2001-02-27 2004-11-11 Tokyo Electron Limited Method and apparatus for plasma processing
KR100501778B1 (ko) * 2001-03-28 2005-07-20 동경 엘렉트론 주식회사 플라즈마 처리 장치
JP3870909B2 (ja) * 2003-01-31 2007-01-24 株式会社島津製作所 プラズマ処理装置
JP4213482B2 (ja) * 2003-02-07 2009-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5312411B2 (ja) * 2003-02-14 2013-10-09 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
US20060137613A1 (en) * 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
WO2005081302A1 (ja) * 2004-02-19 2005-09-01 Tokyo Electron Limited 基板処理装置における処理室のクリーニング方法およびクリーニングの終点検出方法
JP2006294422A (ja) * 2005-04-11 2006-10-26 Tokyo Electron Ltd プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法
US8118946B2 (en) * 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components
JP4793662B2 (ja) * 2008-03-28 2011-10-12 独立行政法人産業技術総合研究所 マイクロ波プラズマ処理装置
WO2012158532A1 (en) * 2011-05-13 2012-11-22 Board Of Trustees Michigan State University Improved microwave plasma reactors
JP2011124295A (ja) * 2009-12-09 2011-06-23 Hitachi High-Technologies Corp プラズマ処理装置
JP5657953B2 (ja) * 2010-08-27 2015-01-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20160314939A1 (en) * 2015-04-24 2016-10-27 Surmet Corporation Plasma-resistant Aluminum Oxynitride Based Reactor Components for Semi-Conductor Manufacturing and Processing Equipment
JP6509049B2 (ja) * 2015-06-05 2019-05-08 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
CN107680915B (zh) 2016-08-02 2020-11-10 北京北方华创微电子装备有限公司 等离子体源的冷却机构及半导体加工设备
JP6698560B2 (ja) 2017-02-01 2020-05-27 東京エレクトロン株式会社 マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法
WO2020017015A1 (ja) * 2018-07-20 2020-01-23 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
US4870245A (en) * 1985-04-01 1989-09-26 Motorola, Inc. Plasma enhanced thermal treatment apparatus
JPS6376434A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd プラズマ処理装置及びプラズマクリーニング方法
DE3750115T2 (de) * 1986-10-20 1995-01-19 Hitachi Ltd Plasmabearbeitungsgerät.
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
JP2680065B2 (ja) * 1988-09-22 1997-11-19 株式会社日立製作所 プラズマクリーニング方法
DE69030140T2 (de) * 1989-06-28 1997-09-04 Canon Kk Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht
US5084125A (en) * 1989-09-12 1992-01-28 Matsushita Electric Industrial Co., Ltd. Apparatus and method for producing semiconductor substrate
US5367139A (en) * 1989-10-23 1994-11-22 International Business Machines Corporation Methods and apparatus for contamination control in plasma processing
DE69123808T2 (de) * 1990-09-26 1997-06-26 Hitachi Ltd Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma
EP0502269A1 (de) * 1991-03-06 1992-09-09 Hitachi, Ltd. Verfahren und Anordnung zum Behandeln mittels Mikrowellenplasmas
DE59202116D1 (de) * 1991-04-23 1995-06-14 Balzers Hochvakuum Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer.
US5198725A (en) * 1991-07-12 1993-03-30 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
EP0647163B1 (de) * 1992-06-22 1998-09-09 Lam Research Corporation Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer
US5410122A (en) * 1993-03-15 1995-04-25 Applied Materials, Inc. Use of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambers
US5454903A (en) * 1993-10-29 1995-10-03 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization
US5507874A (en) * 1994-06-03 1996-04-16 Applied Materials, Inc. Method of cleaning of an electrostatic chuck in plasma reactors

Also Published As

Publication number Publication date
KR100388584B1 (ko) 2003-09-19
JPH07142444A (ja) 1995-06-02
EP0653775B1 (de) 1999-02-10
KR950015620A (ko) 1995-06-17
DE69416489T2 (de) 1999-09-30
US5861601A (en) 1999-01-19
EP0653775A1 (de) 1995-05-17
TW266307B (de) 1995-12-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee