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DE69332648D1 - Grossflächige aktive Matrix - Google Patents

Grossflächige aktive Matrix

Info

Publication number
DE69332648D1
DE69332648D1 DE69332648T DE69332648T DE69332648D1 DE 69332648 D1 DE69332648 D1 DE 69332648D1 DE 69332648 T DE69332648 T DE 69332648T DE 69332648 T DE69332648 T DE 69332648T DE 69332648 D1 DE69332648 D1 DE 69332648D1
Authority
DE
Germany
Prior art keywords
active matrix
large active
matrix
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69332648T
Other languages
English (en)
Other versions
DE69332648T2 (de
Inventor
John Richard Hughes
Martin John Powell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Koninklijke Philips NV
Original Assignee
Philips Electronics UK Ltd
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics UK Ltd, Koninklijke Philips Electronics NV filed Critical Philips Electronics UK Ltd
Publication of DE69332648D1 publication Critical patent/DE69332648D1/de
Application granted granted Critical
Publication of DE69332648T2 publication Critical patent/DE69332648T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13336—Combining plural substrates to produce large-area displays, e.g. tiled displays

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Liquid Crystal (AREA)
DE69332648T 1992-02-08 1993-02-03 Grossflächige aktive Matrix Expired - Fee Related DE69332648T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929202693A GB9202693D0 (en) 1992-02-08 1992-02-08 A method of manufacturing a large area active matrix array

Publications (2)

Publication Number Publication Date
DE69332648D1 true DE69332648D1 (de) 2003-02-20
DE69332648T2 DE69332648T2 (de) 2003-08-14

Family

ID=10710058

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69323100T Expired - Fee Related DE69323100T2 (de) 1992-02-08 1993-02-03 Verfahren zur Herstellung einer grossflächigen aktiven Matrixanordnung
DE69332648T Expired - Fee Related DE69332648T2 (de) 1992-02-08 1993-02-03 Grossflächige aktive Matrix

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69323100T Expired - Fee Related DE69323100T2 (de) 1992-02-08 1993-02-03 Verfahren zur Herstellung einer grossflächigen aktiven Matrixanordnung

Country Status (5)

Country Link
US (1) US5315101A (de)
EP (2) EP0555907B1 (de)
JP (1) JP3607305B2 (de)
DE (2) DE69323100T2 (de)
GB (1) GB9202693D0 (de)

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JP4750878B2 (ja) * 1995-09-05 2011-08-17 キヤノン株式会社 光電変換装置及び放射線撮像装置
JP4557763B2 (ja) * 1995-09-05 2010-10-06 キヤノン株式会社 光電変換装置及び放射線撮像装置
EP0897597B1 (de) 1996-05-08 2002-09-11 iFire Technology Inc. Hochauflösender flacher sensor für strahlungsabbildungssystem
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JP3838393B2 (ja) * 1997-09-02 2006-10-25 株式会社半導体エネルギー研究所 イメージセンサを内蔵した表示装置
JP4271268B2 (ja) * 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JP3847918B2 (ja) * 1997-10-01 2006-11-22 キヤノン株式会社 光電変換装置
JP4044187B2 (ja) * 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
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US6268839B1 (en) 1998-05-12 2001-07-31 Kent State University Drive schemes for gray scale bistable cholesteric reflective displays
US6204835B1 (en) 1998-05-12 2001-03-20 Kent State University Cumulative two phase drive scheme for bistable cholesteric reflective displays
JPH11326954A (ja) * 1998-05-15 1999-11-26 Semiconductor Energy Lab Co Ltd 半導体装置
US6180944B1 (en) 1998-07-07 2001-01-30 Direct Radiography, Corp. Large area X-ray imager with vented seam and method of fabrication
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure
US6075248A (en) * 1998-10-22 2000-06-13 Direct Radiography Corp. Direct radiographic imaging panel with shielding electrode
JP2000131444A (ja) 1998-10-28 2000-05-12 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
DE69923159T2 (de) * 1998-10-30 2005-12-22 Hamamatsu Photonics K.K., Hamamatsu Festkörperbildmatrix
US6486470B2 (en) 1998-11-02 2002-11-26 1294339 Ontario, Inc. Compensation circuit for use in a high resolution amplified flat panel for radiation imaging
US6614873B1 (en) 1998-11-20 2003-09-02 Direct Radiography Corp. Interactive ditigal radiographic system
US6320563B1 (en) 1999-01-21 2001-11-20 Kent State University Dual frequency cholesteric display and drive scheme
US6350985B1 (en) 1999-04-26 2002-02-26 Direct Radiography Corp. Method for calculating gain correction factors in a digital imaging system
US6354737B1 (en) 1999-11-12 2002-03-12 Direct Radiography Corp. Digital image orientation marker
US6370265B1 (en) 1999-11-24 2002-04-09 Direct Radiography Corp. Method for generating gray scale transfer functions for use in displaying a digital radiogram
US6381351B1 (en) 1999-11-24 2002-04-30 Direct Radiography Corp. Weighted inverse topography method for digital x-ray image data processing
SE515884C2 (sv) * 1999-12-29 2001-10-22 Xcounter Ab Förfarande och anordning för radiografi samt strålningsdetektor
US6717151B2 (en) 2000-07-10 2004-04-06 Canon Kabushiki Kaisha Image pickup apparatus
EP1176808A3 (de) * 2000-07-27 2003-01-02 Canon Kabushiki Kaisha Bildaufnahmevorrichtung
US7023409B2 (en) 2001-02-09 2006-04-04 Kent Displays, Incorporated Drive schemes for gray scale bistable cholesteric reflective displays utilizing variable frequency pulses
US6855937B2 (en) * 2001-05-18 2005-02-15 Canon Kabushiki Kaisha Image pickup apparatus
JP4681774B2 (ja) * 2001-08-30 2011-05-11 キヤノン株式会社 撮像素子、その撮像素子を用いた撮像装置、及びその撮像装置を用いた撮像システム
JP3950665B2 (ja) * 2001-10-23 2007-08-01 キヤノン株式会社 放射線撮像装置及び放射線撮像装置の撮像方法
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
CN1248287C (zh) * 2001-11-30 2006-03-29 株式会社半导体能源研究所 半导体设备的制造方法
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP3992976B2 (ja) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100527087B1 (ko) 2001-12-22 2005-11-09 비오이 하이디스 테크놀로지 주식회사 엑스레이 디텍터의 제조방법
JP4030758B2 (ja) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
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US20040246355A1 (en) * 2003-06-06 2004-12-09 Ji Ung Lee Storage capacitor array for a solid state radiation imager
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US8753917B2 (en) * 2010-12-14 2014-06-17 International Business Machines Corporation Method of fabricating photoconductor-on-active pixel device
FR2993097B1 (fr) * 2012-07-05 2015-05-22 Commissariat Energie Atomique Dispositif imageur cmos a geometrie optimisee et procede de realisation d'un tel dispositif par photocomposition
CN104620387B (zh) * 2012-08-23 2018-10-26 皇家飞利浦有限公司 光子计数半导体探测器
JP5424371B1 (ja) 2013-05-08 2014-02-26 誠 雫石 固体撮像素子及び撮像装置
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WO2021006294A1 (ja) 2019-07-09 2021-01-14 雫石　誠 医療車両、ｃｔ装置、及び駆動方法
JPWO2021149577A1 (de) * 2020-01-24 2021-07-29

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Also Published As

Publication number Publication date
JP3607305B2 (ja) 2005-01-05
EP0829905A3 (de) 1998-04-08
GB9202693D0 (en) 1992-03-25
JPH05315581A (ja) 1993-11-26
EP0829905B1 (de) 2003-01-15
EP0555907A1 (de) 1993-08-18
US5315101A (en) 1994-05-24
EP0829905A2 (de) 1998-03-18
DE69323100T2 (de) 1999-07-15
DE69323100D1 (de) 1999-03-04
DE69332648T2 (de) 2003-08-14
EP0555907B1 (de) 1999-01-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee