DE69330599D1 - Verfahren zur Bearbeitung eines Stabes aus Halbleitermaterial - Google Patents

Verfahren zur Bearbeitung eines Stabes aus Halbleitermaterial

Info

Publication number: DE69330599D1
Authority: DE; Germany
Prior art keywords: processing; semiconductor material; rod made; rod; semiconductor
Prior art date: 1992-11-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69330599T

Other languages

English (en)

Other versions

DE69330599T2 (de

Inventor

Yoshihiro Hirano

Atsushi Ozaki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shin Etsu Handotai Co Ltd

Original Assignee

Shin Etsu Handotai Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-11-30

Filing date

1993-11-27

Publication date

2001-09-20

1993-11-27 Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd

2001-09-20 Publication of DE69330599D1 publication Critical patent/DE69330599D1/de

2002-06-27 Application granted granted Critical

2002-06-27 Publication of DE69330599T2 publication Critical patent/DE69330599T2/de

2013-11-28 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
- B24B5/50—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground, e.g. strings
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D5/00—Planing or slotting machines cutting otherwise than by relative movement of the tool and workpiece in a straight line
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Processing Of Stones Or Stones Resemblance Materials (AREA)
Analysing Materials By The Use Of Radiation (AREA)
Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

DE69330599T 1992-11-30 1993-11-27 Verfahren zur Bearbeitung eines Stabes aus Halbleitermaterial Expired - Lifetime DE69330599T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP4320533A JP2903916B2 (ja)	1992-11-30	1992-11-30	半導体インゴット加工方法

Publications (2)

Publication Number	Publication Date
DE69330599D1 true DE69330599D1 (de)	2001-09-20
DE69330599T2 DE69330599T2 (de)	2002-06-27

Family

ID=18122499

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69330599T Expired - Lifetime DE69330599T2 (de)	1992-11-30	1993-11-27	Verfahren zur Bearbeitung eines Stabes aus Halbleitermaterial

Country Status (4)

Country	Link
US (1)	US5484326A (de)
EP (1)	EP0610563B1 (de)
JP (1)	JP2903916B2 (de)
DE (1)	DE69330599T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6006736A (en) *	1995-07-12	1999-12-28	Memc Electronic Materials, Inc.	Method and apparatus for washing silicon ingot with water to remove particulate matter
JPH0936080A (ja) *	1995-07-13	1997-02-07	Toray Eng Co Ltd	加工済シリコンインゴットの洗浄方法
US7637801B2 (en) *	2000-09-28	2009-12-29	Sharp Kabushiki Kaisha	Method of making solar cell
JP3649393B2 (ja) *	2000-09-28	2005-05-18	シャープ株式会社	シリコンウエハの加工方法、シリコンウエハおよびシリコンブロック
DE10392337T5 (de)	2002-03-05	2005-03-03	Corning Incorporated	Verfahren zum Herstellen einer orientierten Vorform aus einem Fluoridkristall
FR2842650B1 (fr) *	2002-07-17	2005-09-02	Soitec Silicon On Insulator	Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique
EP1537258B9 (de) *	2002-07-17	2008-10-29	S.O.I.Tec Silicon on Insulator Technologies	Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik
ITMO20030336A1 (it) *	2003-12-11	2005-06-12	Gabriele Santi	Metodo per ottenere elementi laminari.
DE102007040385A1 (de)	2007-08-27	2009-03-05	Schott Ag	Verfahren zur Herstellung von Siliziumwafern
US7909678B2 (en)	2007-08-27	2011-03-22	Schott Ag	Method for manufacturing silicone wafers
DE102007040390A1 (de)	2007-08-27	2009-03-05	Schott Ag	Verfahren zur Herstellung von Siliziumwafern
WO2009078485A1 (ja) *	2007-12-19	2009-06-25	Asahi Glass Company, Limited	エーテル組成物
JP5333049B2 (ja) *	2009-08-25	2013-11-06	信越半導体株式会社	ワークの加工装置及び加工方法
US8259901B1 (en)	2010-05-25	2012-09-04	Rubicon Technology, Inc.	Intelligent machines and process for production of monocrystalline products with goniometer continual feedback
JP5406126B2 (ja)	2010-06-09	2014-02-05	株式会社岡本工作機械製作所	インゴットブロックの複合面取り加工装置および加工方法
CN105856445B (zh) *	2016-05-23	2017-10-13	上海日进机床有限公司	硅棒截断机及截断方法
JP2019033134A (ja) *	2017-08-04	2019-02-28	株式会社ディスコ	ウエーハ生成方法
JP6841217B2 (ja)	2017-12-19	2021-03-10	株式会社Sumco	インゴットブロックの製造方法、半導体ウェーハの製造方法、およびインゴットブロックの製造装置
EP3908686B1 (de)	2019-01-08	2024-07-24	Topsil GlobalWafers A/S	Markierender scanner
TWI701102B (zh) *	2019-08-30	2020-08-11	環球晶圓股份有限公司	治具模組
CN111152375A (zh) *	2019-11-05	2020-05-15	中国电子科技集团公司第十三研究所	磷化铟晶棒裁切衬底晶圆片的方法
CN113352485A (zh) *	2021-06-09	2021-09-07	阜宁协鑫光伏科技有限公司	硅片多线切割方法
TWI845295B (zh) *	2023-05-04	2024-06-11	環球晶圓股份有限公司	圓磨設備及其晶向調整治具

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4084354A (en) *	1977-06-03	1978-04-18	International Business Machines Corporation	Process for slicing boules of single crystal material
US4331452A (en) *	1980-08-04	1982-05-25	Fairchild Camera And Instrument Corporation	Apparatus for crystal shaping
JPS61167851A (ja) *	1985-01-21	1986-07-29	Sumitomo Electric Ind Ltd	単結晶の評価方法
JPS6296400A (ja) *	1985-10-23	1987-05-02	Mitsubishi Metal Corp	ウエハの製造方法
JPH0743331B2 (ja) *	1985-11-15	1995-05-15	株式会社日立製作所	検出装置
US4773951A (en) *	1986-01-07	1988-09-27	Atlantic Richfield Company	Method of manufacturing wafers of semiconductor material
DE3613132A1 (de) *	1986-04-18	1987-10-22	Mueller Georg Nuernberg	Verfahren zum zerteilen von harten, nichtmetallischen werkstoffen
US4903681A (en) *	1987-02-24	1990-02-27	Tokyo Seimitus Co., Ltd.	Method and apparatus for cutting a cylindrical material
DE3884903T2 (de) *	1987-10-29	1994-02-10	Tokyo Seimitsu Co Ltd	Vorrichtung und Verfahren zum Abschneiden einer Halbleiterscheibe.
US5111622A (en) *	1989-05-18	1992-05-12	Silicon Technology Corporation	Slicing and grinding system for a wafer slicing machine
JP2883667B2 (ja) *	1990-03-07	1999-04-19	理学電機株式会社	単結晶インゴットの結晶方位測定装置
US5185956A (en) *	1990-05-18	1993-02-16	Silicon Technology Corporation	Wafer slicing and grinding system
US5189843A (en) *	1990-08-30	1993-03-02	Silicon Technology Corporation	Wafer slicing and grinding machine and a method of slicing and grinding wafers
JPH0820384B2 (ja) *	1991-02-19	1996-03-04	信越半導体株式会社	単結晶のｏｆ方位検出方法及び装置

1992
- 1992-11-30 JP JP4320533A patent/JP2903916B2/ja not_active Expired - Lifetime
1993
- 1993-11-27 EP EP93119155A patent/EP0610563B1/de not_active Expired - Lifetime
- 1993-11-27 DE DE69330599T patent/DE69330599T2/de not_active Expired - Lifetime
- 1993-11-30 US US08/159,501 patent/US5484326A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0610563B1 (de)	2001-08-16
EP0610563A2 (de)	1994-08-17
DE69330599T2 (de)	2002-06-27
EP0610563A3 (en)	1996-06-12
JPH06166600A (ja)	1994-06-14
US5484326A (en)	1996-01-16
JP2903916B2 (ja)	1999-06-14

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Legal Events

Date	Code	Title	Description
2002-09-12	8364	No opposition during term of opposition