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DE69404267D1 - Verfahren zur Herstellung eines magnetoresistives Material enthaltenden Gegenstands - Google Patents

Verfahren zur Herstellung eines magnetoresistives Material enthaltenden Gegenstands

Info

Publication number
DE69404267D1
DE69404267D1 DE69404267T DE69404267T DE69404267D1 DE 69404267 D1 DE69404267 D1 DE 69404267D1 DE 69404267 T DE69404267 T DE 69404267T DE 69404267 T DE69404267 T DE 69404267T DE 69404267 D1 DE69404267 D1 DE 69404267D1
Authority
DE
Germany
Prior art keywords
producing
article containing
magnetoresistive material
containing magnetoresistive
article
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404267T
Other languages
English (en)
Other versions
DE69404267T2 (de
Inventor
Sungho Jin
Mark Thomas Mccormack
Ramamoorthy Ramesh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Iconectiv LLC
Original Assignee
Telcordia Technologies Inc
AT&T Corp
Bell Communications Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telcordia Technologies Inc, AT&T Corp, Bell Communications Research Inc filed Critical Telcordia Technologies Inc
Application granted granted Critical
Publication of DE69404267D1 publication Critical patent/DE69404267D1/de
Publication of DE69404267T2 publication Critical patent/DE69404267T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/928—Magnetic property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
DE69404267T 1993-11-18 1994-11-09 Verfahren zur Herstellung eines magnetoresistives Material enthaltenden Gegenstands Expired - Fee Related DE69404267T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15476693A 1993-11-18 1993-11-18
US08/228,168 US5549977A (en) 1993-11-18 1994-04-15 Article comprising magnetoresistive material

Publications (2)

Publication Number Publication Date
DE69404267D1 true DE69404267D1 (de) 1997-08-21
DE69404267T2 DE69404267T2 (de) 1998-01-15

Family

ID=26851760

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404267T Expired - Fee Related DE69404267T2 (de) 1993-11-18 1994-11-09 Verfahren zur Herstellung eines magnetoresistives Material enthaltenden Gegenstands

Country Status (4)

Country Link
US (1) US5549977A (de)
EP (1) EP0654835B1 (de)
JP (1) JP2963354B2 (de)
DE (1) DE69404267T2 (de)

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JP2723082B2 (ja) * 1995-06-26 1998-03-09 日本電気株式会社 酸化物磁性体及びそれを用いた磁気検出素子
JPH09231523A (ja) * 1996-02-27 1997-09-05 Nec Corp 磁気抵抗効果ヘッド
US5792569A (en) * 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials
US5840420A (en) * 1996-03-21 1998-11-24 The University Of Alabama Magnetoresistance elements exhibiting thermally stable giant magnetoresistance effect
US5764056A (en) * 1996-05-16 1998-06-09 Seagate Technology, Inc. Nickel-manganese as a pinning layer in spin valve/GMR magnetic sensors
US6337991B1 (en) 1996-11-05 2002-01-08 Corning Applied Technologies Corp. Large temperature coefficient of resistance material
US6117571A (en) 1997-03-28 2000-09-12 Advanced Technology Materials, Inc. Compositions and method for forming doped A-site deficient thin-film manganate layers on a substrate
ES2128263B1 (es) * 1997-05-28 1999-12-16 Consejo Superior Investigacion Dispositivos magnetoresistivos para la deteccion de presencia y posicion de piezas metalicas.
US5856008A (en) * 1997-06-05 1999-01-05 Lucent Technologies Inc. Article comprising magnetoresistive material
US5854587A (en) * 1997-06-26 1998-12-29 The United States Of America As Represented By The Secretary Of The Navy REx M1-x Mny O.sub.δ films for microbolometer-based IR focal plane arrays
ES2141666B1 (es) * 1997-10-24 2000-11-16 Consejo Superior Investigacion Potenciometro modulado magneticamente basado en las propiedades magnetoresistivas de oxidos de manganeso.
US6134090A (en) * 1998-03-20 2000-10-17 Seagate Technology Llc Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer
US6356420B1 (en) 1998-05-07 2002-03-12 Seagate Technology Llc Storage system having read head utilizing GMR and AMr effects
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
CN1430792A (zh) 2000-05-31 2003-07-16 摩托罗拉公司 半导体器件及方法
DE10031229C1 (de) * 2000-06-23 2001-11-22 Dresden Ev Inst Festkoerper Stromabhängiges resistives Bauelement
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6590236B1 (en) * 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
AU2001277001A1 (en) 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
DE10110292C1 (de) * 2001-02-26 2002-10-02 Dresden Ev Inst Festkoerper Stromabhängiges resistives Bauelement
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
JP2008270677A (ja) * 2007-04-25 2008-11-06 National Institute For Materials Science ドープド・ペロブスカイト・マンガナイト単結晶を用いた巨大異方性磁気抵抗素子
KR20210151147A (ko) 2019-04-08 2021-12-13 케플러 컴퓨팅 인크. 도핑된 극성 층 및 이를 포함하는 반도체 장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622613A (en) * 1983-10-07 1986-11-11 Matsushita Electric Industrials Co., Ltd. Thin film magnetic head
MY108176A (en) * 1991-02-08 1996-08-30 Hitachi Global Storage Tech Netherlands B V Magnetoresistive sensor based on oscillations in the magnetoresistance
US5304975A (en) * 1991-10-23 1994-04-19 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetoresistance effect sensor
US5287238A (en) * 1992-11-06 1994-02-15 International Business Machines Corporation Dual spin valve magnetoresistive sensor
DE4425356C2 (de) * 1993-09-29 1998-07-02 Siemens Ag Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur

Also Published As

Publication number Publication date
DE69404267T2 (de) 1998-01-15
JPH07193298A (ja) 1995-07-28
JP2963354B2 (ja) 1999-10-18
EP0654835B1 (de) 1997-07-16
EP0654835A1 (de) 1995-05-24
US5549977A (en) 1996-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee