[go: up one dir, main page]

DE69328932D1 - Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen - Google Patents

Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen

Info

Publication number
DE69328932D1
DE69328932D1 DE69328932T DE69328932T DE69328932D1 DE 69328932 D1 DE69328932 D1 DE 69328932D1 DE 69328932 T DE69328932 T DE 69328932T DE 69328932 T DE69328932 T DE 69328932T DE 69328932 D1 DE69328932 D1 DE 69328932D1
Authority
DE
Germany
Prior art keywords
protection
power semiconductor
clamping structure
semiconductor components
active clamping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69328932T
Other languages
English (en)
Other versions
DE69328932T2 (de
Inventor
Piero Giorgio Fallica
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69328932D1 publication Critical patent/DE69328932D1/de
Publication of DE69328932T2 publication Critical patent/DE69328932T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
DE69328932T 1993-12-13 1993-12-13 Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen Expired - Fee Related DE69328932T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830497A EP0657933B1 (de) 1993-12-13 1993-12-13 Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen

Publications (2)

Publication Number Publication Date
DE69328932D1 true DE69328932D1 (de) 2000-08-03
DE69328932T2 DE69328932T2 (de) 2000-12-14

Family

ID=8215274

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328932T Expired - Fee Related DE69328932T2 (de) 1993-12-13 1993-12-13 Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen

Country Status (4)

Country Link
US (1) US5530271A (de)
EP (1) EP0657933B1 (de)
JP (1) JP2680788B2 (de)
DE (1) DE69328932T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098075A (ja) * 1995-06-23 1997-01-10 Toshiba Corp 半導体装置
US5789951A (en) * 1997-01-31 1998-08-04 Motorola, Inc. Monolithic clamping circuit and method of preventing transistor avalanche breakdown
US6005438A (en) * 1997-12-10 1999-12-21 National Semiconductor Corporation Output high voltage clamped circuit for low voltage differential swing applications in the case of overload
JP3911566B2 (ja) * 1998-01-27 2007-05-09 富士電機デバイステクノロジー株式会社 Ｍｏｓ型半導体装置
DE19919140B4 (de) 1998-04-29 2011-03-31 National Semiconductor Corp.(N.D.Ges.D.Staates Delaware), Santa Clara Niederspannungs-Differenzsignaltreiber mit Vorverstärkerschaltung
US6111431A (en) * 1998-05-14 2000-08-29 National Semiconductor Corporation LVDS driver for backplane applications
US6833590B2 (en) * 2001-01-11 2004-12-21 Renesas Technology Corp. Semiconductor device
GB2413699B (en) * 2004-04-29 2006-02-15 Lite On Semiconductor Corp Overvoltage protection device and manufacturing process for the same
JP4620387B2 (ja) * 2004-06-15 2011-01-26 ルネサスエレクトロニクス株式会社 半導体保護装置
US7342420B2 (en) * 2004-09-24 2008-03-11 Integrated Device Technology, Inc. Low power output driver
US7636005B2 (en) * 2007-09-07 2009-12-22 International Rectifier Corporation Active clamp for semiconductor device
US8665007B2 (en) * 2011-06-10 2014-03-04 Cypress Semiconductor Corporation Dynamic power clamp for RFID power control
US20130240894A1 (en) * 2012-03-13 2013-09-19 Hans Joachim Würfl Overvoltage Protection Device for Compound Semiconductor Field Effect Transistors
US9379541B2 (en) 2013-09-26 2016-06-28 Globalfoundries Inc. EOS protection circuit with FET-based trigger diodes
US9093568B1 (en) * 2014-04-16 2015-07-28 Infineon Technologies Ag Semiconductor diode

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
DE3380582D1 (en) * 1982-06-30 1989-10-19 Toshiba Kk Dynamic semiconductor memory and manufacturing method thereof
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture
JPH0642557B2 (ja) * 1987-12-14 1994-06-01 日本電気株式会社 静電保護ダイオードを有する半導体装置
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
JPH02230774A (ja) * 1989-03-03 1990-09-13 Fujitsu Ltd 絶縁ゲート型半導体装置
JPH0465878A (ja) * 1990-07-06 1992-03-02 Fuji Electric Co Ltd 半導体装置
JPH04291767A (ja) * 1991-03-20 1992-10-15 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
DE69326543T2 (de) * 1993-04-28 2000-01-05 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Monolithisch integrierte Struktur einer elektronischen Vorrichtung mit einer bestimmten unidirektionalen Konduktionsschwellenspannung

Also Published As

Publication number Publication date
EP0657933A1 (de) 1995-06-14
US5530271A (en) 1996-06-25
DE69328932T2 (de) 2000-12-14
JP2680788B2 (ja) 1997-11-19
JPH07202199A (ja) 1995-08-04
EP0657933B1 (de) 2000-06-28

Similar Documents

Publication Publication Date Title
DE69315495D1 (de) Schutzschaltung gegen Überspannungen für Leistungsbauteil
DE69328932D1 (de) Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen
DE69318658D1 (de) Leistungs-Halbeiterbauelement
DE69508046D1 (de) Integrierte halbleiteranordnung
FI971776L (fi) Yhdisteet ja koostumukset aktiivisten aineiden antamiseksi
DE59406106D1 (de) Leistungshalbleiterbauelement
DE69624413D1 (de) Verbesserungen bei der Herstellung von Halbleitervorrichtungen
KR960702962A (ko) 전압 변환 및 과전압으로부터의 보호(voltage translation and overvoltage protection)
DE69318796D1 (de) Aktiver dreiphasiger Gleichrichter
KR960702960A (ko) 과전압에 대한 보호(overvoltage protection)
DE69327320D1 (de) Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung
DE69411174D1 (de) Sonnenschutzwirkstoffe
DE69330455D1 (de) Überspannungsschutzstruktur für vertikale Halbleiterkomponenten
DE69420570D1 (de) Schutz fur puffer gegen ausgangspannungsveranderungen
DE69302244D1 (de) Halbleiter-Schutzkomponente
DE69414305D1 (de) Hochspannungs-Halbleiterstruktur
DE69431965D1 (de) Wirkstoff gegen fettsucht
DE69121860D1 (de) Überspannungen zwischen ausgewählten Grenzen begrenzende Schutzschaltung und deren monolitsche Integration
DE69210224D1 (de) Schutzschaltung für Leistungstransistor
DE59508681D1 (de) Leistungshalbleitermodul
DE69300040D1 (de) Schutzschaltung gegen Stromunterbrechungen für eine integrierte Schaltung.
DE69409597D1 (de) Leistungshalbleiterbauelement
DE69220330D1 (de) Halbleiterbauelement zum Schutz gegen Überspannungen
DE69330556D1 (de) Integrierte Schaltungsstruktur für den Schutz von Leistungsvorrichtung gegen Überspannungen
DE69218543D1 (de) Eingangsschutzschaltung für Halbleiter gegen externe Überspannungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee