[go: up one dir, main page]

DE69321965D1 - MOS-Leistungs-Chip-Typ und Packungszusammenbau - Google Patents

MOS-Leistungs-Chip-Typ und Packungszusammenbau

Info

Publication number
DE69321965D1
DE69321965D1 DE69321965T DE69321965T DE69321965D1 DE 69321965 D1 DE69321965 D1 DE 69321965D1 DE 69321965 T DE69321965 T DE 69321965T DE 69321965 T DE69321965 T DE 69321965T DE 69321965 D1 DE69321965 D1 DE 69321965D1
Authority
DE
Germany
Prior art keywords
package assembly
chip type
power chip
mos power
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69321965T
Other languages
English (en)
Other versions
DE69321965T2 (de
Inventor
Cesare Ronsisvalle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Publication of DE69321965D1 publication Critical patent/DE69321965D1/de
Application granted granted Critical
Publication of DE69321965T2 publication Critical patent/DE69321965T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69321965T 1993-12-24 1993-12-24 MOS-Leistungs-Chip-Typ und Packungszusammenbau Expired - Fee Related DE69321965T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19930830523 EP0660396B1 (de) 1993-12-24 1993-12-24 MOS-Leistungs-Chip-Typ und Packungszusammenbau

Publications (2)

Publication Number Publication Date
DE69321965D1 true DE69321965D1 (de) 1998-12-10
DE69321965T2 DE69321965T2 (de) 1999-06-02

Family

ID=8215286

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321965T Expired - Fee Related DE69321965T2 (de) 1993-12-24 1993-12-24 MOS-Leistungs-Chip-Typ und Packungszusammenbau

Country Status (4)

Country Link
US (1) US5821616A (de)
EP (1) EP0660396B1 (de)
JP (1) JP2809998B2 (de)
DE (1) DE69321965T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2962136B2 (ja) * 1994-03-16 1999-10-12 株式会社日立製作所 絶縁ゲート型半導体装置及びそれを用いた電力変換装置
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US7659577B2 (en) * 2005-07-01 2010-02-09 International Rectifier Corporation Power semiconductor device with current sense capability

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL136562C (de) * 1963-10-24
GB1226080A (de) * 1967-11-28 1971-03-24
US3667008A (en) * 1970-10-29 1972-05-30 Rca Corp Semiconductor device employing two-metal contact and polycrystalline isolation means
US3831067A (en) * 1972-05-15 1974-08-20 Int Rectifier Corp Semiconductor device with pressure connection electrodes and with headers cemented to insulation ring
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
US4008486A (en) * 1975-06-02 1977-02-15 International Rectifier Corporation Compression-assembled semiconductor device with nesting circular flanges and flexible locating ring
US4070690A (en) * 1976-08-17 1978-01-24 Westinghouse Electric Corporation VMOS transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
DK157272C (da) * 1978-10-13 1990-04-30 Int Rectifier Corp Mosfet med hoej effekt
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4329642A (en) * 1979-03-09 1982-05-11 Siliconix, Incorporated Carrier and test socket for leadless integrated circuit
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
US4305087A (en) * 1979-06-29 1981-12-08 International Rectifier Corporation Stud-mounted pressure assembled semiconductor device
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4414560A (en) * 1980-11-17 1983-11-08 International Rectifier Corporation Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
US4399449A (en) * 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4642419A (en) * 1981-04-06 1987-02-10 International Rectifier Corporation Four-leaded dual in-line package module for semiconductor devices
FR2523745B1 (fr) * 1982-03-18 1987-06-26 Bull Sa Procede et dispositif de protection d'un logiciel livre par un fournisseur a un utilisateur
US4574208A (en) * 1982-06-21 1986-03-04 Eaton Corporation Raised split gate EFET and circuitry
FR2531572A1 (fr) * 1982-08-09 1984-02-10 Radiotechnique Compelec Dispositif mos a structure plane multicellulaire
US4641418A (en) * 1982-08-30 1987-02-10 International Rectifier Corporation Molding process for semiconductor devices and lead frame structure therefor
US4556896A (en) * 1982-08-30 1985-12-03 International Rectifier Corporation Lead frame structure
US4965173A (en) * 1982-12-08 1990-10-23 International Rectifier Corporation Metallizing process and structure for semiconductor devices
US4878099A (en) * 1982-12-08 1989-10-31 International Rectifier Corporation Metallizing system for semiconductor wafers
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
US4639762A (en) * 1984-04-30 1987-01-27 Rca Corporation MOSFET with reduced bipolar effects
US4663820A (en) * 1984-06-11 1987-05-12 International Rectifier Corporation Metallizing process for semiconductor devices
US4606998A (en) * 1985-04-30 1986-08-19 International Business Machines Corporation Barrierless high-temperature lift-off process
US4723197A (en) * 1985-12-16 1988-02-02 National Semiconductor Corporation Bonding pad interconnection structure
US4853762A (en) * 1986-03-27 1989-08-01 International Rectifier Corporation Semi-conductor modules
US4794431A (en) * 1986-04-21 1988-12-27 International Rectifier Corporation Package for photoactivated semiconductor device
JPS6384067A (ja) * 1986-09-27 1988-04-14 Toshiba Corp 半導体装置の製造方法
US4845545A (en) * 1987-02-13 1989-07-04 International Rectifier Corporation Low profile semiconductor package
FR2616966B1 (fr) * 1987-06-22 1989-10-27 Thomson Semiconducteurs Structure de transistors mos de puissance
JP2771172B2 (ja) * 1988-04-01 1998-07-02 日本電気株式会社 縦型電界効果トランジスタ
US4881106A (en) * 1988-05-23 1989-11-14 Ixys Corporation DV/DT of power MOSFETS
JPH0680818B2 (ja) * 1989-10-02 1994-10-12 株式会社東芝 電力用圧接型半導体装置
EP0433650B1 (de) * 1989-11-17 1998-03-04 Kabushiki Kaisha Toshiba Halbleiteranordnung mit zusammengesetzter Bipolar-MOS-Elementpille, geeignet für eine Druckkontaktstruktur
JP2667027B2 (ja) * 1989-12-28 1997-10-22 株式会社東芝 圧接型半導体装置
JPH03254137A (ja) * 1990-03-05 1991-11-13 Toshiba Corp 半導体集積回路装置
US5047833A (en) * 1990-10-17 1991-09-10 International Rectifier Corporation Solderable front metal contact for MOS devices
US5153507A (en) * 1990-11-16 1992-10-06 Vlsi Technology, Inc. Multi-purpose bond pad test die
JPH04290272A (ja) * 1991-03-19 1992-10-14 Fuji Electric Co Ltd 半導体装置およびその製造方法
EP0514615B1 (de) * 1991-05-23 1995-05-03 STMicroelectronics S.r.l. Elektronische Leistungsanordnung realisiert durch eine Reihe elementarer Halbleiterbauelemente in Parallelverbindung und verwandtes Herstellungsverfahren
JP2550248B2 (ja) * 1991-10-14 1996-11-06 株式会社東芝 半導体集積回路装置およびその製造方法
JP3185292B2 (ja) * 1991-12-12 2001-07-09 関西日本電気株式会社 半導体装置
EP0660402B1 (de) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Leistungs-Halbleiterbauelement
JP3256636B2 (ja) * 1994-09-15 2002-02-12 株式会社東芝 圧接型半導体装置

Also Published As

Publication number Publication date
JP2809998B2 (ja) 1998-10-15
EP0660396A1 (de) 1995-06-28
JPH07202202A (ja) 1995-08-04
EP0660396B1 (de) 1998-11-04
DE69321965T2 (de) 1999-06-02
US5821616A (en) 1998-10-13

Similar Documents

Publication Publication Date Title
DE69637488D1 (de) Halbleiter und Halbleitermodul
DE69821573D1 (de) Epoxidharzzusammensetzung und damit eingekapselte Halbleiteranordnungen
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
KR100244835B1 (en) Semiconductor chip and manufacturing methdo thereof
DE59406106D1 (de) Leistungshalbleiterbauelement
DE69419469D1 (de) Halbleiterbauelement und Halbleiterspeichervorrichtung
DE69420327D1 (de) Halbleiter-Leistungsschaltung
DE69809623D1 (de) Logische MOS-Schaltung und Halbleitervorrichtung
DE69534483D1 (de) Leiterrahmen und Halbleiterbauelement
DE69518935D1 (de) Halbleiterpackung
DE69722106D1 (de) Epoxidharzzusammensetzung und damit eingekapselte Halbleiteranordnungen
KR960012451A (ko) 반도체 장치 및 리드프레임
DE69632178D1 (de) Leistungshalbleitermodul und zusammengeschaltetes Leistungsmodul
DE69409597D1 (de) Leistungshalbleiterbauelement
DE69419881D1 (de) Verpackte Halbeiteranordnung und deren Herstellungsverfahren
DE69321966D1 (de) Leistungs-Halbleiterbauelement
DE59510269D1 (de) Leistungs-Halbleiterbauelement
DE69321965D1 (de) MOS-Leistungs-Chip-Typ und Packungszusammenbau
KR960012443A (ko) 반도체 패키지
KR960025455U (ko) 반도체 패키지
DE69530871D1 (de) Halbleiteranordnung MOS-typ
KR950021423U (ko) 칩 사이즈 페키지
DE69839205D1 (de) Halbleiterelementmodul und Halbleiter
KR960006383U (ko) 반도체 패키지
KR960012677U (ko) 반도체 패키지

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee