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DE69317838D1 - Poliergerät - Google Patents

Poliergerät

Info

Publication number
DE69317838D1
DE69317838D1 DE69317838T DE69317838T DE69317838D1 DE 69317838 D1 DE69317838 D1 DE 69317838D1 DE 69317838 T DE69317838 T DE 69317838T DE 69317838 T DE69317838 T DE 69317838T DE 69317838 D1 DE69317838 D1 DE 69317838D1
Authority
DE
Germany
Prior art keywords
polisher
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317838T
Other languages
English (en)
Other versions
DE69317838T2 (de
Inventor
Masayoshi Hirose
Seiji Ishikawa
Norio Kimura
Kiyotaka Kawashima
You Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of DE69317838D1 publication Critical patent/DE69317838D1/de
Publication of DE69317838T2 publication Critical patent/DE69317838T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
DE69317838T 1992-09-24 1993-09-22 Poliergerät Expired - Fee Related DE69317838T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27934392 1992-09-24
JP28049192 1992-09-25

Publications (2)

Publication Number Publication Date
DE69317838D1 true DE69317838D1 (de) 1998-05-14
DE69317838T2 DE69317838T2 (de) 1998-11-12

Family

ID=26553285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317838T Expired - Fee Related DE69317838T2 (de) 1992-09-24 1993-09-22 Poliergerät

Country Status (4)

Country Link
US (2) US5384986A (de)
EP (2) EP0812656A3 (de)
KR (1) KR100277388B1 (de)
DE (1) DE69317838T2 (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3036348B2 (ja) * 1994-03-23 2000-04-24 三菱マテリアル株式会社 ウェーハ研磨パッドのツルーイング装置
JP2914166B2 (ja) * 1994-03-16 1999-06-28 日本電気株式会社 研磨布の表面処理方法および研磨装置
US5547417A (en) * 1994-03-21 1996-08-20 Intel Corporation Method and apparatus for conditioning a semiconductor polishing pad
KR0132274B1 (ko) * 1994-05-16 1998-04-11 김광호 웨이퍼 연마 설비
JPH08168953A (ja) * 1994-12-16 1996-07-02 Ebara Corp ドレッシング装置
US5486265A (en) * 1995-02-06 1996-01-23 Advanced Micro Devices, Inc. Chemical-mechanical polishing of thin materials using a pulse polishing technique
JP3594357B2 (ja) * 1995-04-10 2004-11-24 株式会社荏原製作所 ポリッシング方法及び装置
US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
JP3678468B2 (ja) * 1995-07-18 2005-08-03 株式会社荏原製作所 ポリッシング装置
US5609718A (en) * 1995-09-29 1997-03-11 Micron Technology, Inc. Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers
US5655951A (en) * 1995-09-29 1997-08-12 Micron Technology, Inc. Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US5611943A (en) * 1995-09-29 1997-03-18 Intel Corporation Method and apparatus for conditioning of chemical-mechanical polishing pads
JP2833552B2 (ja) * 1995-10-19 1998-12-09 日本電気株式会社 ウェハ研磨方法および研磨装置
US5658190A (en) * 1995-12-15 1997-08-19 Micron Technology, Inc. Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers
US5616069A (en) * 1995-12-19 1997-04-01 Micron Technology, Inc. Directional spray pad scrubber
EP0787561B1 (de) * 1996-02-05 2002-01-09 Ebara Corporation Poliermaschine
JP3111892B2 (ja) * 1996-03-19 2000-11-27 ヤマハ株式会社 研磨装置
US5840202A (en) * 1996-04-26 1998-11-24 Memc Electronic Materials, Inc. Apparatus and method for shaping polishing pads
US5879226A (en) * 1996-05-21 1999-03-09 Micron Technology, Inc. Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
TW355153B (en) * 1996-05-21 1999-04-01 Toshiba Machine Co Ltd A method for leveling abrasive cloth and device for the same
US5645682A (en) * 1996-05-28 1997-07-08 Micron Technology, Inc. Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers
KR100524510B1 (ko) 1996-06-25 2006-01-12 가부시키가이샤 에바라 세이사꾸쇼 연마포를드레싱하는방법과장치
US5833519A (en) * 1996-08-06 1998-11-10 Micron Technology, Inc. Method and apparatus for mechanical polishing
AU4472997A (en) 1996-10-15 1998-05-11 Nippon Steel Corporation Semiconductor substrate polishing pad dresser, method of manufacturing the same, and chemicomechanical polishing method using the same dresser
US5782675A (en) * 1996-10-21 1998-07-21 Micron Technology, Inc. Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers
US6769967B1 (en) 1996-10-21 2004-08-03 Micron Technology, Inc. Apparatus and method for refurbishing polishing pads used in chemical-mechanical planarization of semiconductor wafers
KR100247921B1 (ko) * 1997-01-17 2000-03-15 윤종용 화학 기계적 연마 장치 및 이를 이용한 화학 기계적 연마 방법
KR100538540B1 (ko) 1997-04-08 2006-06-16 가부시키가이샤 에바라 세이사꾸쇼 폴리싱장치
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
US5885147A (en) * 1997-05-12 1999-03-23 Integrated Process Equipment Corp. Apparatus for conditioning polishing pads
AT407806B (de) * 1997-05-23 2001-06-25 Sez Semiconduct Equip Zubehoer Anordnung zum behandeln wafer-förmiger gegenstände, insbesondere von siliziumwafern
US5961373A (en) * 1997-06-16 1999-10-05 Motorola, Inc. Process for forming a semiconductor device
US6116990A (en) * 1997-07-25 2000-09-12 Applied Materials, Inc. Adjustable low profile gimbal system for chemical mechanical polishing
US5916010A (en) * 1997-10-30 1999-06-29 International Business Machines Corporation CMP pad maintenance apparatus and method
US6196896B1 (en) 1997-10-31 2001-03-06 Obsidian, Inc. Chemical mechanical polisher
US6146241A (en) * 1997-11-12 2000-11-14 Fujitsu Limited Apparatus for uniform chemical mechanical polishing by intermittent lifting and reversible rotation
JPH11254314A (ja) * 1998-03-10 1999-09-21 Speedfam Co Ltd ワーク面加工装置
JP3770752B2 (ja) * 1998-08-11 2006-04-26 株式会社日立製作所 半導体装置の製造方法及び加工装置
TW396084B (en) * 1998-08-12 2000-07-01 Worldwild Semiconductor Mfg Co Chemical mechanic polishing machine
US6179693B1 (en) * 1998-10-06 2001-01-30 International Business Machines Corporation In-situ/self-propelled polishing pad conditioner and cleaner
KR20010008429A (ko) * 1998-12-30 2001-02-05 김영환 연마패드 컨디셔너 및 이를 이용한 연마패드 컨디셔닝 방법
KR100521350B1 (ko) * 1999-01-08 2005-10-12 삼성전자주식회사 반도체 웨이퍼의 평탄화 설비
US6491570B1 (en) * 1999-02-25 2002-12-10 Applied Materials, Inc. Polishing media stabilizer
US6302771B1 (en) * 1999-04-01 2001-10-16 Philips Semiconductor, Inc. CMP pad conditioner arrangement and method therefor
US6352595B1 (en) * 1999-05-28 2002-03-05 Lam Research Corporation Method and system for cleaning a chemical mechanical polishing pad
JP2000334658A (ja) * 1999-05-28 2000-12-05 Fujitsu Ltd ラップ加工装置
US6306008B1 (en) * 1999-08-31 2001-10-23 Micron Technology, Inc. Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization
US6193587B1 (en) * 1999-10-01 2001-02-27 Taiwan Semicondutor Manufacturing Co., Ltd Apparatus and method for cleansing a polishing pad
US6343975B1 (en) 1999-10-05 2002-02-05 Peter Mok Chemical-mechanical polishing apparatus with circular motion pads
US6302774B1 (en) * 2000-01-21 2001-10-16 Martin Thomas Black Orbital disc sander support
US6443810B1 (en) * 2000-04-11 2002-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Polishing platen equipped with guard ring for chemical mechanical polishing
US6561884B1 (en) 2000-08-29 2003-05-13 Applied Materials, Inc. Web lift system for chemical mechanical planarization
US6800020B1 (en) 2000-10-02 2004-10-05 Lam Research Corporation Web-style pad conditioning system and methods for implementing the same
US6482072B1 (en) 2000-10-26 2002-11-19 Applied Materials, Inc. Method and apparatus for providing and controlling delivery of a web of polishing material
US6592439B1 (en) 2000-11-10 2003-07-15 Applied Materials, Inc. Platen for retaining polishing material
KR20020087536A (ko) * 2001-05-14 2002-11-23 삼성전자 주식회사 폴리싱장치의 패드컨디셔너
US6503131B1 (en) 2001-08-16 2003-01-07 Applied Materials, Inc. Integrated platen assembly for a chemical mechanical planarization system
US6605159B2 (en) * 2001-08-30 2003-08-12 Micron Technology, Inc. Device and method for collecting and measuring chemical samples on pad surface in CMP
DE10338682B4 (de) * 2002-09-25 2010-03-18 Georg Weber Vorrichtung zum Bearbeiten von im wesentlichen flachen Werkstücken
US7252099B2 (en) * 2003-09-05 2007-08-07 Nan Ya Technology Corporation Wafer cleaning apparatus with multiple wash-heads
US7210988B2 (en) * 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
TW200720493A (en) * 2005-10-31 2007-06-01 Applied Materials Inc Electrochemical method for ecmp polishing pad conditioning
US20070158207A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Methods for electrochemical processing with pre-biased cells
US20070212983A1 (en) * 2006-03-13 2007-09-13 Applied Materials, Inc. Apparatus and methods for conditioning a polishing pad
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
US7749048B2 (en) * 2006-05-19 2010-07-06 Applied Materials, Inc. Polishing pad conditioning process
KR100824996B1 (ko) * 2006-12-27 2008-04-24 주식회사 하이닉스반도체 화학적기계연마 공정에서의 포스트 세정방법
KR101037634B1 (ko) * 2008-11-28 2011-05-30 세메스 주식회사 기판 연마 장치 및 이를 이용한 기판 세정 방법
KR101034236B1 (ko) * 2008-11-28 2011-05-12 세메스 주식회사 브러쉬 유닛, 이를 갖는 기판 연마 장치 및 이를 이용한 기판 세정 방법
KR101034235B1 (ko) * 2008-11-28 2011-05-12 세메스 주식회사 기판 연마 장치 및 이를 이용한 기판 연마 방법
JP2010179407A (ja) * 2009-02-05 2010-08-19 Elpida Memory Inc Ｃｍｐ装置
JP5535687B2 (ja) * 2010-03-01 2014-07-02 株式会社荏原製作所 基板洗浄方法及び基板洗浄装置
JP6279276B2 (ja) * 2013-10-03 2018-02-14 株式会社荏原製作所 基板洗浄装置及び基板処理装置
US10105812B2 (en) 2014-07-17 2018-10-23 Applied Materials, Inc. Polishing pad configuration and polishing pad support
KR102535628B1 (ko) 2016-03-24 2023-05-30 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 조직화된 소형 패드
CN113118916B (zh) * 2021-03-17 2022-08-16 上海工程技术大学 一种大型环抛机工件环驱动设备

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Also Published As

Publication number Publication date
EP0812656A2 (de) 1997-12-17
EP0589434B1 (de) 1998-04-08
USRE38228E1 (en) 2003-08-19
KR940008017A (ko) 1994-04-28
EP0589434A1 (de) 1994-03-30
KR100277388B1 (ko) 2001-02-01
DE69317838T2 (de) 1998-11-12
US5384986A (en) 1995-01-31
EP0812656A3 (de) 1998-07-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee