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DE69314292D1 - Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft - Google Patents

Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft

Info

Publication number
DE69314292D1
DE69314292D1 DE69314292T DE69314292T DE69314292D1 DE 69314292 D1 DE69314292 D1 DE 69314292D1 DE 69314292 T DE69314292 T DE 69314292T DE 69314292 T DE69314292 T DE 69314292T DE 69314292 D1 DE69314292 D1 DE 69314292D1
Authority
DE
Germany
Prior art keywords
transistor
field effect
heterojunction field
improved
properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69314292T
Other languages
English (en)
Other versions
DE69314292T2 (de
Inventor
Kenichi Maruhashi
Kazuhiko Onda
Masaaki Kuzuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69314292D1 publication Critical patent/DE69314292D1/de
Publication of DE69314292T2 publication Critical patent/DE69314292T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
DE69314292T 1992-12-17 1993-12-17 Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft Expired - Fee Related DE69314292T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4337287A JP2758803B2 (ja) 1992-12-17 1992-12-17 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE69314292D1 true DE69314292D1 (de) 1997-11-06
DE69314292T2 DE69314292T2 (de) 1998-04-16

Family

ID=18307200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314292T Expired - Fee Related DE69314292T2 (de) 1992-12-17 1993-12-17 Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft

Country Status (4)

Country Link
US (1) US5466955A (de)
EP (1) EP0602671B1 (de)
JP (1) JP2758803B2 (de)
DE (1) DE69314292T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739557A (en) * 1995-02-06 1998-04-14 Motorola, Inc. Refractory gate heterostructure field effect transistor
US5663583A (en) * 1995-06-06 1997-09-02 Hughes Aircraft Company Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate
US5767539A (en) * 1996-04-05 1998-06-16 Nec Corporation Heterojunction field effect transistor having a InAlAs Schottky barrier layer formed upon an n-InP donor layer
US5844261A (en) * 1997-06-03 1998-12-01 Lucent Technologies Inc. InAlGaP devices
JP4028897B2 (ja) * 1997-07-24 2007-12-26 三菱電機株式会社 電界効果半導体装置
US7244630B2 (en) 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
TWI393258B (zh) * 2009-03-13 2013-04-11 Nat Univ Dong Hwa Field effect transistor with indium aluminum gallium / gallium arsenide hump gate
CN102856373B (zh) * 2012-09-29 2015-04-01 电子科技大学 高电子迁移率晶体管

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140468A (ja) * 1982-02-17 1983-08-20 Hitachi Ltd リダクシヨンスタ−タ
JPS5928383A (ja) * 1982-08-10 1984-02-15 Nec Corp 半導体装置
JPH07120790B2 (ja) * 1984-06-18 1995-12-20 株式会社日立製作所 半導体装置
JPS61174775A (ja) * 1985-01-30 1986-08-06 Fujitsu Ltd 半導体装置
JPS6235678A (ja) * 1985-08-09 1987-02-16 Fujitsu Ltd ダブル・ヘテロ型電界効果トランジスタ
JPS63150985A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPH0321033A (ja) * 1989-06-19 1991-01-29 Fujitsu Ltd 半導体装置
JP3086748B2 (ja) * 1991-07-26 2000-09-11 株式会社東芝 高電子移動度トランジスタ

Also Published As

Publication number Publication date
DE69314292T2 (de) 1998-04-16
EP0602671A3 (de) 1995-12-20
EP0602671B1 (de) 1997-10-01
JPH06188271A (ja) 1994-07-08
EP0602671A2 (de) 1994-06-22
JP2758803B2 (ja) 1998-05-28
US5466955A (en) 1995-11-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee