[go: up one dir, main page]

DE69231091D1 - Integrierte Halbleiterschaltung mit einer Schutzvorrichtung - Google Patents

Integrierte Halbleiterschaltung mit einer Schutzvorrichtung

Info

Publication number
DE69231091D1
DE69231091D1 DE69231091T DE69231091T DE69231091D1 DE 69231091 D1 DE69231091 D1 DE 69231091D1 DE 69231091 T DE69231091 T DE 69231091T DE 69231091 T DE69231091 T DE 69231091T DE 69231091 D1 DE69231091 D1 DE 69231091D1
Authority
DE
Germany
Prior art keywords
protective device
semiconductor circuit
integrated semiconductor
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69231091T
Other languages
English (en)
Other versions
DE69231091T2 (de
Inventor
Stephen Wilton Byatt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Innovations Ltd
Original Assignee
Power Innovations Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Innovations Ltd filed Critical Power Innovations Ltd
Publication of DE69231091D1 publication Critical patent/DE69231091D1/de
Application granted granted Critical
Publication of DE69231091T2 publication Critical patent/DE69231091T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
DE69231091T 1991-12-30 1992-12-14 Integrierte Halbleiterschaltung mit einer Schutzvorrichtung Expired - Lifetime DE69231091T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919127476A GB9127476D0 (en) 1991-12-30 1991-12-30 A semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
DE69231091D1 true DE69231091D1 (de) 2000-06-29
DE69231091T2 DE69231091T2 (de) 2000-09-14

Family

ID=10706887

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231091T Expired - Lifetime DE69231091T2 (de) 1991-12-30 1992-12-14 Integrierte Halbleiterschaltung mit einer Schutzvorrichtung

Country Status (5)

Country Link
US (1) US5304823A (de)
EP (1) EP0550198B1 (de)
JP (1) JP3175985B2 (de)
DE (1) DE69231091T2 (de)
GB (1) GB9127476D0 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2734113B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection complet de circuit d'interface de lignes d'abonnes
FR2734114B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection sensible de circuit d'interface de lignes d'abonnes
FR2773265B1 (fr) * 1997-12-30 2000-03-10 Sgs Thomson Microelectronics Circuit de protection d'interface d'abonnes
DE102005029867B3 (de) * 2005-06-27 2007-02-22 Siemens Ag Schutzschaltung in einer Einrichtung zur Einkopplung von Fernspeisespannungen
US8530964B2 (en) * 2011-12-08 2013-09-10 Infineon Technologies Ag Semiconductor device including first and second semiconductor elements
US8901647B2 (en) 2011-12-08 2014-12-02 Infineon Technologies Ag Semiconductor device including first and second semiconductor elements
EP4128359B8 (de) * 2020-03-31 2023-12-20 Hitachi Energy Ltd Leistungshalbleiterbauelement mit einem thyristor and einem bipolartransistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942990B2 (ja) * 1977-03-26 1984-10-18 三菱電機株式会社 半導体スイツチ
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS56112751A (en) * 1980-02-13 1981-09-05 Toshiba Corp Switching element
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
SE431381B (sv) * 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
DE3234092A1 (de) * 1982-09-14 1984-03-15 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung fuer den ueberspannungsschutz einer monolithisch integrierten bipolaren halbleiterschaltung
GB8305878D0 (en) * 1983-03-03 1983-04-07 Texas Instruments Ltd Starter circuit
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2598043A1 (fr) * 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
AR240631A1 (es) * 1986-06-06 1990-06-30 Siemens Ag Disposicion de circuito para proteger circuitos electronicos de interfase de circuitos de conexion de abonado de una red telefonica tiempo-multiplex digital
JPH01133414A (ja) * 1987-11-18 1989-05-25 Mitsubishi Electric Corp カスコードＢｉＭＯＳ駆動回路
GB2218872B (en) * 1988-05-19 1992-01-29 Texas Instruments Ltd Improvements in and relating to overvoltage protectors
US4868703A (en) * 1989-02-06 1989-09-19 Northern Telecom Limited Solid state switching device

Also Published As

Publication number Publication date
US5304823A (en) 1994-04-19
JP3175985B2 (ja) 2001-06-11
JPH05251690A (ja) 1993-09-28
EP0550198A1 (de) 1993-07-07
GB9127476D0 (en) 1992-02-19
EP0550198B1 (de) 2000-05-24
DE69231091T2 (de) 2000-09-14

Similar Documents

Publication Publication Date Title
DE69230359D1 (de) Halbleiteranordnung mit Schmelzsicherung
DE69231039D1 (de) Halbleiteranordnungzusammenbau
DE69332329D1 (de) Halbleiteranordnung
DE69332960D1 (de) Halbleiteranordnung
DE69318239D1 (de) Halbleiterbauelement mit planarer Grenzfläche
DE69227856D1 (de) Halbleitervorrichtung mit niedrigen thermischen Spannungen
DE69010034D1 (de) Halbleiteranordnung mit einer Schutzschaltung.
DE69121845D1 (de) Halbleiterbauelement mit einer Eingangsschutzschaltung
DE69118049D1 (de) Halbleiterspeicheranordnung mit einer Leistungserhöhungsschaltung
DE69216452D1 (de) Halbleiteranordnung mit elektromagnetischer Abschirmung
DE69428378D1 (de) Halbleiteranordnung mit einer Durchgangsleitung
DE69620507D1 (de) Halbleiteranordnung mit einer Schutzvorrichtung
DE69118750D1 (de) Halbleiteranordnung mit einer Wärmesenke
DE69125437D1 (de) Halbleiteranordnung mit einer Temperaturfühlerschaltung
DE69226742D1 (de) Halbleitervorrichtung
DE69124399D1 (de) Halbleitervorrichtung
EP0480582A3 (en) A semiconductor device with a protective element
ITMI940742A0 (it) Dispositivo semi-conduttore a circuito integrato
KR930009747U (ko) 반도체장치
DE69030575D1 (de) Integrierte Halbleiterschaltung mit einem Detektor
DE69231091D1 (de) Integrierte Halbleiterschaltung mit einer Schutzvorrichtung
DE69409341D1 (de) Halbleitervorrichtung mit Fotodioden
DE69229937D1 (de) Avalanche Diode in einer bipolaren integrierten Schaltung
DE69210935D1 (de) Halbleiteranordnung
DE69327858D1 (de) Halbleiterspeichergerät mit einer Prüfschaltung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R071 Expiry of right

Ref document number: 550198

Country of ref document: EP