[go: up one dir, main page]

JPS56112751A - Switching element - Google Patents

Switching element

Info

Publication number
JPS56112751A
JPS56112751A JP1615280A JP1615280A JPS56112751A JP S56112751 A JPS56112751 A JP S56112751A JP 1615280 A JP1615280 A JP 1615280A JP 1615280 A JP1615280 A JP 1615280A JP S56112751 A JPS56112751 A JP S56112751A
Authority
JP
Japan
Prior art keywords
emitter
region
transistor
base
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1615280A
Other languages
Japanese (ja)
Other versions
JPS625346B2 (en
Inventor
Susumu Yasaka
Masami Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1615280A priority Critical patent/JPS56112751A/en
Priority to GB8103251A priority patent/GB2069787B/en
Priority to CA000370458A priority patent/CA1154172A/en
Priority to DE3104743A priority patent/DE3104743C2/en
Publication of JPS56112751A publication Critical patent/JPS56112751A/en
Publication of JPS625346B2 publication Critical patent/JPS625346B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain a Darlington transistor capable of accelerating the switching speed by forming a high impurity density region enclosing an emitter inserted between the base and the emitter of an initial stage transistor.
CONSTITUTION: An NPN transistor 1 having an N type region 12 as an emitter, P type regions 111, 112 as bases and an N type substrate 10 as a collector and an NPN transistor 2 having an N type region 14 as an emitter and the region 112 as a base are connected in a Darlington manner. Further, an NPN transistor 21 having an N type region 23 as an emitter, a P+ type region 22 and a P type region 115 as bases and the substrate 10 as a collector is formed, and the emitter 23 is connected to the base 111 of the transistor 1. Thus, the amplification factor of the transistor 21 becomes less than 1 due to the region 22, and high speed switching can be performed by rapidly releasing the stored charge of the base region from the emitter 23.
COPYRIGHT: (C)1981,JPO&Japio
JP1615280A 1980-02-13 1980-02-13 Switching element Granted JPS56112751A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1615280A JPS56112751A (en) 1980-02-13 1980-02-13 Switching element
GB8103251A GB2069787B (en) 1980-02-13 1981-02-03 Semiconductor switching device
CA000370458A CA1154172A (en) 1980-02-13 1981-02-10 Semiconductor switching device
DE3104743A DE3104743C2 (en) 1980-02-13 1981-02-11 Semiconductor switching arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1615280A JPS56112751A (en) 1980-02-13 1980-02-13 Switching element

Publications (2)

Publication Number Publication Date
JPS56112751A true JPS56112751A (en) 1981-09-05
JPS625346B2 JPS625346B2 (en) 1987-02-04

Family

ID=11908523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1615280A Granted JPS56112751A (en) 1980-02-13 1980-02-13 Switching element

Country Status (4)

Country Link
JP (1) JPS56112751A (en)
CA (1) CA1154172A (en)
DE (1) DE3104743C2 (en)
GB (1) GB2069787B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126959A (en) * 1980-03-12 1981-10-05 Nec Corp Semiconductor device
JPS62198148A (en) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd Semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3631957A1 (en) * 1986-09-19 1988-03-31 Siemens Ag Circuit arrangement for turning off transistors in a Darlington circuit
GB9127476D0 (en) * 1991-12-30 1992-02-19 Texas Instruments Ltd A semiconductor integrated circuit
JPH05243259A (en) * 1992-03-03 1993-09-21 Mitsubishi Electric Corp Bipolar transistor and manufacturing method thereof, Darlington transistor and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126959A (en) * 1980-03-12 1981-10-05 Nec Corp Semiconductor device
JPS6232625B2 (en) * 1980-03-12 1987-07-15 Nippon Electric Co
JPS62198148A (en) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd Semiconductor device
JPH0577296B2 (en) * 1986-02-25 1993-10-26 Sanyo Electric Co

Also Published As

Publication number Publication date
DE3104743A1 (en) 1982-01-07
GB2069787A (en) 1981-08-26
JPS625346B2 (en) 1987-02-04
DE3104743C2 (en) 1983-12-22
GB2069787B (en) 1985-01-03
CA1154172A (en) 1983-09-20

Similar Documents

Publication Publication Date Title
JPS51128268A (en) Semiconductor unit
JPS56125871A (en) Transistor
JPS56133867A (en) Thermoelectric emission transistor
JPS56112751A (en) Switching element
GB1504032A (en) Muting circuits
EP0114319A3 (en) Automatic gain control circuit
JPS55103756A (en) Electrostatic induction transistor integrated circuit
JPS55163913A (en) Flip-flop circuit
JPS53130981A (en) Manufacture for semiconductor device
JPS53107279A (en) Semiconductor device
JPS5248978A (en) Process for production of semiconductor device
JPS54137282A (en) Lateral transistor
JPS5432986A (en) Semiconductor device
JPS5382276A (en) Production of semiconductor device
JPS5260078A (en) Pnp type transistor for semiconductor integrated circuit
JPS5496976A (en) Transistor for power
JPS5263691A (en) Production of semiconductor integrated circuit device
JPS536578A (en) Production of semiconductor device
JPS5776873A (en) Manufacture of semiconductor device
JPS5383584A (en) Semiconductor logic element
JPS51144589A (en) Semiconductor device
JPS5469968A (en) Transistor
JPS554915A (en) Semi-conductor manufacturing method
JPS53121586A (en) Manufacture of integrated circuit
JPS5530898A (en) Fabrication method of semiconductor