[go: up one dir, main page]

DE69225026D1 - Überspannungsgeschützter Halbleiterschalter - Google Patents

Überspannungsgeschützter Halbleiterschalter

Info

Publication number
DE69225026D1
DE69225026D1 DE69225026T DE69225026T DE69225026D1 DE 69225026 D1 DE69225026 D1 DE 69225026D1 DE 69225026 T DE69225026 T DE 69225026T DE 69225026 T DE69225026 T DE 69225026T DE 69225026 D1 DE69225026 D1 DE 69225026D1
Authority
DE
Germany
Prior art keywords
surge
semiconductor switch
protected semiconductor
protected
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69225026T
Other languages
English (en)
Other versions
DE69225026T2 (de
Inventor
Brendan Patrick Kelly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB919115699A external-priority patent/GB9115699D0/en
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69225026D1 publication Critical patent/DE69225026D1/de
Application granted granted Critical
Publication of DE69225026T2 publication Critical patent/DE69225026T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69225026T 1991-07-19 1992-07-10 Überspannungsgeschützter Halbleiterschalter Expired - Fee Related DE69225026T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB919115699A GB9115699D0 (en) 1991-07-19 1991-07-19 An overvoltage protected semiconductor switch
GB929207869A GB9207869D0 (en) 1991-07-19 1992-04-09 An overvoltage protected semiconductor switch

Publications (2)

Publication Number Publication Date
DE69225026D1 true DE69225026D1 (de) 1998-05-14
DE69225026T2 DE69225026T2 (de) 1998-10-15

Family

ID=26299275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69225026T Expired - Fee Related DE69225026T2 (de) 1991-07-19 1992-07-10 Überspannungsgeschützter Halbleiterschalter

Country Status (3)

Country Link
EP (1) EP0523800B1 (de)
JP (1) JP3337493B2 (de)
DE (1) DE69225026T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345357A (en) * 1992-06-05 1994-09-06 At&T Bell Laboratories ESD protection of output buffers
DE69420327T2 (de) * 1993-06-22 2000-03-30 Koninklijke Philips Electronics N.V., Eindhoven Halbleiter-Leistungsschaltung
GB9313651D0 (en) * 1993-07-01 1993-08-18 Philips Electronics Uk Ltd A semiconductor device
GB9326275D0 (en) * 1993-12-23 1994-02-23 Lucas Ind Plc Tamper-resistant circuit
US5489792A (en) * 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
US5880506A (en) * 1994-10-28 1999-03-09 Siemens Aktiengesellschaft Solid-state switching element with two source electrodes and solid-state switch with such an element
JP3485655B2 (ja) * 1994-12-14 2004-01-13 株式会社ルネサステクノロジ 複合型ｍｏｓｆｅｔ
DE19739683A1 (de) * 1997-09-10 1999-03-18 Bosch Gmbh Robert Schaltungsanordnung zum Schutz integrierter Schaltungen vor elektrostatischen Entladungen
DE19740540C1 (de) * 1997-09-15 1999-03-18 Siemens Ag Schaltungsanordnung zur Begrenzung von Überspannungen bei Leistungshalbleitern
FI117410B (fi) * 1998-07-31 2006-09-29 Lexel Finland Ab Oy Suoja verkon ylijännitepiikkiä vastaan
JP4501178B2 (ja) * 1999-07-26 2010-07-14 株式会社デンソー 半導体装置のための保護装置
US6614633B1 (en) 1999-03-19 2003-09-02 Denso Corporation Semiconductor device including a surge protecting circuit
JP3926975B2 (ja) * 1999-09-22 2007-06-06 株式会社東芝 スタック型ｍｏｓトランジスタ保護回路
US6392463B1 (en) 2000-07-07 2002-05-21 Denso Corporation Electrical load driving circuit with protection
US6690065B2 (en) * 2000-12-28 2004-02-10 Industrial Technology Research Institute Substrate-biased silicon diode for electrostatic discharge protection and fabrication method
JP5686701B2 (ja) * 2011-08-11 2015-03-18 新日本無線株式会社 正負電圧論理出力回路およびこれを用いた高周波スイッチ回路
JP6203097B2 (ja) * 2014-03-20 2017-09-27 株式会社東芝 半導体装置
DE102015111479B4 (de) * 2015-07-15 2020-09-24 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer klemmstruktur
JP7291495B2 (ja) * 2019-02-12 2023-06-15 ローム株式会社 半導体装置
TW202427752A (zh) * 2022-12-28 2024-07-01 美商高效電源轉換公司 用於電力裝置之閘極過電壓保護之積體電路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2206993A (en) * 1987-06-08 1989-01-18 Philips Electronic Associated A method of manufacturing a semiconductor device
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device
JPH02185069A (ja) * 1988-12-02 1990-07-19 Motorola Inc 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス
US5023692A (en) * 1989-12-07 1991-06-11 Harris Semiconductor Patents, Inc. Power MOSFET transistor circuit
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance

Also Published As

Publication number Publication date
JP3337493B2 (ja) 2002-10-21
JPH0864812A (ja) 1996-03-08
EP0523800A1 (de) 1993-01-20
DE69225026T2 (de) 1998-10-15
EP0523800B1 (de) 1998-04-08

Similar Documents

Publication Publication Date Title
DE69229546D1 (de) Halbleiteranordnung
DE69230432D1 (de) Photoelektischer schalter
BR9203731A (pt) Disjuntor
NO932670D0 (no) Blandinger
DE69225026D1 (de) Überspannungsgeschützter Halbleiterschalter
FI915781A (fi) Puolijohdekytkimen ohjauspiiri
DE69328444D1 (de) Schalter
NO307853B1 (no) Koplingsinnretning
DE69206651D1 (de) Schaltungsanordnung
DE69213986D1 (de) Schaltungsanordnung
FI924305L (fi) N-alkyl-3-fenyl-3-(2-alkyltiofenoxi)propylaminer
DE69216663D1 (de) Schaltkreis
DE69125135D1 (de) Schalteraufbau
DE69226742D1 (de) Halbleitervorrichtung
DE69124399D1 (de) Halbleitervorrichtung
DE69207929D1 (de) Lastschalter
BR9204388A (pt) Comutador montado
DE59005948D1 (de) Halbleiterschalter.
DK37791A (da) Kontaktloest joystik
KR930009747U (ko) 반도체장치
DE69305421D1 (de) Halbleiterschaltung
DE69220456D1 (de) Schaltungsanordnung
FI934710A0 (fi) 4-aryl-3-(heteroarylureido)kinolinderivat
DE69210935D1 (de) Halbleiteranordnung
DE69213662D1 (de) Vakuumschalter

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8328 Change in the person/name/address of the agent

Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee