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DE69215608D1 - Dünnschichttransistor und dessen Herstellungsmethode - Google Patents

Dünnschichttransistor und dessen Herstellungsmethode

Info

Publication number
DE69215608D1
DE69215608D1 DE69215608T DE69215608T DE69215608D1 DE 69215608 D1 DE69215608 D1 DE 69215608D1 DE 69215608 T DE69215608 T DE 69215608T DE 69215608 T DE69215608 T DE 69215608T DE 69215608 D1 DE69215608 D1 DE 69215608D1
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
film transistor
transistor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69215608T
Other languages
English (en)
Other versions
DE69215608T2 (de
Inventor
Kunihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25284591A external-priority patent/JP3175225B2/ja
Priority claimed from JP35132991A external-priority patent/JP3094610B2/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of DE69215608D1 publication Critical patent/DE69215608D1/de
Publication of DE69215608T2 publication Critical patent/DE69215608T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
DE69215608T 1991-09-05 1992-09-04 Dünnschichttransistor und dessen Herstellungsmethode Expired - Lifetime DE69215608T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25284591A JP3175225B2 (ja) 1991-09-05 1991-09-05 薄膜トランジスタの製造方法
JP35132991A JP3094610B2 (ja) 1991-12-13 1991-12-13 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE69215608D1 true DE69215608D1 (de) 1997-01-16
DE69215608T2 DE69215608T2 (de) 1997-03-27

Family

ID=26540910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215608T Expired - Lifetime DE69215608T2 (de) 1991-09-05 1992-09-04 Dünnschichttransistor und dessen Herstellungsmethode

Country Status (2)

Country Link
EP (1) EP0530834B1 (de)
DE (1) DE69215608T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2718885B1 (fr) * 1994-04-15 1996-07-05 Thomson Lcd Procédé de fabrication d'un TFT étagé inverse.
KR100338480B1 (ko) * 1995-08-19 2003-01-24 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
KR100225098B1 (ko) 1996-07-02 1999-10-15 구자홍 박막트랜지스터의 제조방법
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
KR100825907B1 (ko) 2000-05-13 2008-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제작방법
KR100796749B1 (ko) 2001-05-16 2008-01-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
KR102037048B1 (ko) 2009-11-13 2019-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP3550604A1 (de) 2009-12-25 2019-10-09 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01219721A (ja) * 1988-02-19 1989-09-01 Internatl Business Mach Corp <Ibm> 金属絶縁物構造体及び液晶表示装置
GB2223353A (en) * 1988-09-30 1990-04-04 Philips Electronic Associated Thin-film transistor

Also Published As

Publication number Publication date
EP0530834B1 (de) 1996-12-04
EP0530834A1 (de) 1993-03-10
DE69215608T2 (de) 1997-03-27

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