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DE69214991D1 - Infrarotdetektor - Google Patents

Infrarotdetektor

Info

Publication number
DE69214991D1
DE69214991D1 DE69214991T DE69214991T DE69214991D1 DE 69214991 D1 DE69214991 D1 DE 69214991D1 DE 69214991 T DE69214991 T DE 69214991T DE 69214991 T DE69214991 T DE 69214991T DE 69214991 D1 DE69214991 D1 DE 69214991D1
Authority
DE
Germany
Prior art keywords
infrared detector
infrared
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69214991T
Other languages
English (en)
Other versions
DE69214991T2 (de
Inventor
Toshiyuki Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69214991D1 publication Critical patent/DE69214991D1/de
Publication of DE69214991T2 publication Critical patent/DE69214991T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE69214991T 1991-03-15 1992-03-13 Infrarotdetektor Expired - Fee Related DE69214991T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3050963A JP2797738B2 (ja) 1991-03-15 1991-03-15 赤外線検知装置

Publications (2)

Publication Number Publication Date
DE69214991D1 true DE69214991D1 (de) 1996-12-12
DE69214991T2 DE69214991T2 (de) 1997-06-05

Family

ID=12873473

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69214991T Expired - Fee Related DE69214991T2 (de) 1991-03-15 1992-03-13 Infrarotdetektor

Country Status (3)

Country Link
EP (1) EP0509247B1 (de)
JP (1) JP2797738B2 (de)
DE (1) DE69214991T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4309181A1 (de) * 1993-03-22 1994-09-29 Max Planck Gesellschaft Opto-elektronische Halbleitereinrichtung und Verfahren zu ihrer Herstellung
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
US6965152B1 (en) * 1997-11-26 2005-11-15 California Institute Of Technology Broad-band quantum well infrared photodetectors
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
FR2780203B1 (fr) * 1998-06-23 2003-07-04 Thomson Csf Detecteur a puits quantique avec couche de stockage des electrons photoexcites
KR100313889B1 (ko) * 1999-03-31 2001-11-17 구자홍 양자점 적외선 수광소자 및 그 제조방법
JP5168868B2 (ja) * 2006-09-29 2013-03-27 富士通株式会社 量子井戸型光検知器
JP4829809B2 (ja) * 2007-02-14 2011-12-07 富士通株式会社 量子井戸型赤外線検出器
CN103367481B (zh) * 2013-07-30 2016-01-06 电子科技大学 砷化镓量子环红外光电探测器及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3484197D1 (de) * 1984-01-13 1991-04-04 Texas Instruments Inc Infrarotdetektorsystem aus aiii-bv-epitaxialmaterialien.
CA1314614C (en) * 1988-06-06 1993-03-16 Clyde George Bethea Quantum-well radiation detector
US5077593A (en) * 1989-12-27 1991-12-31 Hughes Aircraft Company Dark current-free multiquantum well superlattice infrared detector

Also Published As

Publication number Publication date
JPH04286373A (ja) 1992-10-12
EP0509247B1 (de) 1996-11-06
EP0509247A2 (de) 1992-10-21
JP2797738B2 (ja) 1998-09-17
EP0509247A3 (en) 1993-01-13
DE69214991T2 (de) 1997-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee